JP5451018B2 - 選択的酸化プロセスの酸化物成長速度の改良方法 - Google Patents
選択的酸化プロセスの酸化物成長速度の改良方法 Download PDFInfo
- Publication number
- JP5451018B2 JP5451018B2 JP2008244684A JP2008244684A JP5451018B2 JP 5451018 B2 JP5451018 B2 JP 5451018B2 JP 2008244684 A JP2008244684 A JP 2008244684A JP 2008244684 A JP2008244684 A JP 2008244684A JP 5451018 B2 JP5451018 B2 JP 5451018B2
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- gas
- silicon
- substrate
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 65
- 230000008569 process Effects 0.000 title description 44
- 238000007254 oxidation reaction Methods 0.000 title description 34
- 230000003647 oxidation Effects 0.000 title description 28
- 239000000758 substrate Substances 0.000 claims description 54
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 33
- 229910052710 silicon Inorganic materials 0.000 claims description 33
- 239000010703 silicon Substances 0.000 claims description 33
- 239000000203 mixture Substances 0.000 claims description 32
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 24
- 230000001590 oxidative effect Effects 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 239000002131 composite material Substances 0.000 claims description 11
- 239000002253 acid Substances 0.000 claims 3
- 239000007789 gas Substances 0.000 description 90
- 239000010410 layer Substances 0.000 description 59
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 39
- 239000001257 hydrogen Substances 0.000 description 35
- 229910052739 hydrogen Inorganic materials 0.000 description 35
- 239000001301 oxygen Substances 0.000 description 26
- 229910052760 oxygen Inorganic materials 0.000 description 26
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 22
- 238000006243 chemical reaction Methods 0.000 description 15
- 230000004888 barrier function Effects 0.000 description 13
- 229910021420 polycrystalline silicon Chemical group 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 229920005591 polysilicon Chemical group 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- -1 tungsten halogen Chemical class 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 238000002485 combustion reaction Methods 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004880 explosion Methods 0.000 description 2
- 239000002905 metal composite material Substances 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 239000001272 nitrous oxide Substances 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910008065 Si-SiO Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- 229910006405 Si—SiO Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28247—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
- H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
[0001]本発明の実施形態は、一般的には、半導体製造の分野に関し、更に詳細には、シリコン/金属複合膜の選択的酸化のための方法及び装置に関する。
[0002]半導体デバイスの製造において、シリコン含有基板の酸化は、重要な役割を果たしている。例えば、標準的な半導体デバイスにおいて、ゲート酸化物層は、普通は、ソース領域とドレイン領域と介在シリコン又はポリシリコン領域を含有する基板の上に位置する。金属コンタクトは、ソース領域とドレイン領域の上に堆積され、導電層はゲート酸化物の上に堆積される。全体の構造は、層のスタックとしてしばしば示される。ゲート酸化物全体に電圧を印加して電界が基板からゲート酸化物を通って導電層に軸に沿って生じる場合、ソース領域とドレイン領域間の領域の電気特性が変化し、領域間の電子の流れを入れたり、止めたりする。従って、ゲート酸化物層は、半導体デバイスの構造において極めて重要な役割を果たしている。
[0040]シリコン/金属複合膜の選択的酸化の方法及び装置に関する本発明の実施形態を記載してきた。半導体デバイスにおけるシリコン含有物質は、高圧インサイチュ水蒸気生成によって、金属層のようなデバイスの他の層を酸化させずに急速に酸化させる。上記は本発明の実施形態に関するが、本発明の他の多くの実施形態が本発明の基本的範囲から逸脱することなく構成されてもよい。本発明の範囲は、以下の特許請求の範囲によって決定される。
Claims (3)
- 複合基板の物質を選択的に酸化する方法であって:
一つ以上のシリコン含有物質層と一つ以上の金属含有物質層を持つ複合基板を準備するステップと、
該複合基板をチャンバ内に配置するステップと;
該チャンバに酸素ガスと水素ガスのガス混合物を導入するステップであって、該水素ガスが該ガス混合物の約85%である、前記ステップと;
該チャンバを約450トールに加圧するステップと;
該チャンバを所定の温度に所定の時間加熱して該水素ガスと該酸素ガスを該チャンバ内部で反応させ、該複合基板のシリコン含有物質のみを選択的に酸化させるステップと;
を含む、前記方法。 - 該所定の温度が700℃を超える、請求項1に記載の方法。
- 該水素ガスと該酸素ガスを該チャンバの外部で混合して、該ガス混合物を生成させる、請求項1に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/860,161 | 2007-09-24 | ||
US11/860,161 US7951728B2 (en) | 2007-09-24 | 2007-09-24 | Method of improving oxide growth rate of selective oxidation processes |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011201340A Division JP2012044192A (ja) | 2007-09-24 | 2011-09-15 | 選択的酸化プロセスの酸化物成長速度の改良方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009158918A JP2009158918A (ja) | 2009-07-16 |
JP2009158918A5 JP2009158918A5 (ja) | 2011-11-04 |
JP5451018B2 true JP5451018B2 (ja) | 2014-03-26 |
Family
ID=40297951
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008244684A Active JP5451018B2 (ja) | 2007-09-24 | 2008-09-24 | 選択的酸化プロセスの酸化物成長速度の改良方法 |
JP2011201340A Pending JP2012044192A (ja) | 2007-09-24 | 2011-09-15 | 選択的酸化プロセスの酸化物成長速度の改良方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011201340A Pending JP2012044192A (ja) | 2007-09-24 | 2011-09-15 | 選択的酸化プロセスの酸化物成長速度の改良方法 |
Country Status (7)
Country | Link |
---|---|
US (3) | US7951728B2 (ja) |
EP (2) | EP3540763A1 (ja) |
JP (2) | JP5451018B2 (ja) |
KR (1) | KR101028441B1 (ja) |
CN (2) | CN104269343A (ja) |
SG (1) | SG151226A1 (ja) |
TW (2) | TWI436425B (ja) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5211464B2 (ja) * | 2006-10-20 | 2013-06-12 | 東京エレクトロン株式会社 | 被処理体の酸化装置 |
US7951728B2 (en) * | 2007-09-24 | 2011-05-31 | Applied Materials, Inc. | Method of improving oxide growth rate of selective oxidation processes |
US8163626B2 (en) * | 2009-06-15 | 2012-04-24 | Applied Materials, Inc. | Enhancing NAND flash floating gate performance |
JP5396180B2 (ja) * | 2009-07-27 | 2014-01-22 | 東京エレクトロン株式会社 | 選択酸化処理方法、選択酸化処理装置およびコンピュータ読み取り可能な記憶媒体 |
CN104106128B (zh) * | 2012-02-13 | 2016-11-09 | 应用材料公司 | 用于基板的选择性氧化的方法和设备 |
US20140015031A1 (en) * | 2012-07-12 | 2014-01-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and Method for Memory Device |
CN103165432B (zh) * | 2013-03-15 | 2016-08-03 | 上海华力微电子有限公司 | 一种栅氧化层的制备方法 |
JP5636575B2 (ja) * | 2013-08-28 | 2014-12-10 | 株式会社ユーテック | 水蒸気加圧急速加熱装置及び酸化物材料膜の製造方法 |
US20160254145A1 (en) * | 2015-02-27 | 2016-09-01 | Globalfoundries Inc. | Methods for fabricating semiconductor structure with condensed silicon germanium layer |
US20180076026A1 (en) | 2016-09-14 | 2018-03-15 | Applied Materials, Inc. | Steam oxidation initiation for high aspect ratio conformal radical oxidation |
US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
US10847360B2 (en) | 2017-05-25 | 2020-11-24 | Applied Materials, Inc. | High pressure treatment of silicon nitride film |
US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
KR102574914B1 (ko) | 2017-06-02 | 2023-09-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 보론 카바이드 하드마스크의 건식 스트리핑 |
US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
KR102405723B1 (ko) | 2017-08-18 | 2022-06-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 및 고온 어닐링 챔버 |
JP7274461B2 (ja) | 2017-09-12 | 2023-05-16 | アプライド マテリアルズ インコーポレイテッド | 保護バリア層を使用して半導体構造を製造する装置および方法 |
US10643867B2 (en) | 2017-11-03 | 2020-05-05 | Applied Materials, Inc. | Annealing system and method |
CN111357090B (zh) | 2017-11-11 | 2024-01-05 | 微材料有限责任公司 | 用于高压处理腔室的气体输送系统 |
JP7330181B2 (ja) | 2017-11-16 | 2023-08-21 | アプライド マテリアルズ インコーポレイテッド | 高圧蒸気アニール処理装置 |
KR20200075892A (ko) | 2017-11-17 | 2020-06-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 처리 시스템을 위한 컨덴서 시스템 |
TWI794363B (zh) | 2017-12-20 | 2023-03-01 | 美商應用材料股份有限公司 | 金屬薄膜之高壓氧化 |
CN111699549A (zh) | 2018-01-24 | 2020-09-22 | 应用材料公司 | 使用高压退火的接缝弥合 |
KR20230079236A (ko) | 2018-03-09 | 2023-06-05 | 어플라이드 머티어리얼스, 인코포레이티드 | 금속 함유 재료들을 위한 고압 어닐링 프로세스 |
US10714331B2 (en) | 2018-04-04 | 2020-07-14 | Applied Materials, Inc. | Method to fabricate thermally stable low K-FinFET spacer |
US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
US10566188B2 (en) | 2018-05-17 | 2020-02-18 | Applied Materials, Inc. | Method to improve film stability |
US10704141B2 (en) | 2018-06-01 | 2020-07-07 | Applied Materials, Inc. | In-situ CVD and ALD coating of chamber to control metal contamination |
US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
US10675581B2 (en) | 2018-08-06 | 2020-06-09 | Applied Materials, Inc. | Gas abatement apparatus |
WO2020092002A1 (en) | 2018-10-30 | 2020-05-07 | Applied Materials, Inc. | Methods for etching a structure for semiconductor applications |
KR20210077779A (ko) | 2018-11-16 | 2021-06-25 | 어플라이드 머티어리얼스, 인코포레이티드 | 강화된 확산 프로세스를 사용한 막 증착 |
WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
US11322347B2 (en) | 2018-12-14 | 2022-05-03 | Applied Materials, Inc. | Conformal oxidation processes for 3D NAND |
TW202107528A (zh) | 2019-04-30 | 2021-02-16 | 美商得昇科技股份有限公司 | 氫氣輔助的大氣自由基氧化 |
US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
US11569245B2 (en) * | 2020-10-22 | 2023-01-31 | Applied Materials, Inc. | Growth of thin oxide layer with amorphous silicon and oxidation |
US11610776B2 (en) | 2021-02-08 | 2023-03-21 | Applied Materials, Inc. | Method of linearized film oxidation growth |
US11996305B2 (en) | 2021-06-29 | 2024-05-28 | Applied Materials, Inc. | Selective oxidation on rapid thermal processing (RTP) chamber with active steam generation |
WO2023140541A1 (ko) * | 2022-01-24 | 2023-07-27 | 주식회사 에이치피에스피 | 반도체 공정의 절연막 제조 방법 |
Family Cites Families (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59132136A (ja) | 1983-01-19 | 1984-07-30 | Hitachi Ltd | 半導体装置の製造方法 |
US5015587A (en) * | 1988-08-08 | 1991-05-14 | Phillips Petroleum Company | Reformer optimization for head limited recycle system |
JPH07183477A (ja) * | 1993-12-22 | 1995-07-21 | Nec Corp | 半導体基板の製造方法 |
TW471068B (en) | 1997-03-05 | 2002-01-01 | Hitachi Ltd | Method for fabricating semiconductor integrated circuit device with insulation film |
US6005225A (en) | 1997-03-28 | 1999-12-21 | Silicon Valley Group, Inc. | Thermal processing apparatus |
US5851892A (en) | 1997-05-07 | 1998-12-22 | Cypress Semiconductor Corp. | Fabrication sequence employing an oxide formed with minimized inducted charge and/or maximized breakdown voltage |
JPH10335652A (ja) * | 1997-05-30 | 1998-12-18 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JPH10340909A (ja) | 1997-06-06 | 1998-12-22 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JP3544123B2 (ja) | 1997-07-04 | 2004-07-21 | 富士電機デバイステクノロジー株式会社 | 炭化けい素半導体装置の熱酸化膜形成方法 |
US6037273A (en) * | 1997-07-11 | 2000-03-14 | Applied Materials, Inc. | Method and apparatus for insitu vapor generation |
TW374853B (en) | 1997-08-04 | 1999-11-21 | Toshiba Corp | Dry etching method of thin film and method for manufacturing thin film semiconductor device |
DE69840861D1 (de) * | 1997-10-14 | 2009-07-16 | Texas Instruments Inc | Verfahren zum Oxidieren einer Struktur während der Herstellung einer Halbleitervorrichtung |
TW421849B (en) | 1998-02-23 | 2001-02-11 | Winbond Electronics Corp | Structure of multi-layered dielectric opening and its fabricating method |
US6291868B1 (en) | 1998-02-26 | 2001-09-18 | Micron Technology, Inc. | Forming a conductive structure in a semiconductor device |
KR20010071235A (ko) | 1998-05-11 | 2001-07-28 | 세미툴 인코포레이티드 | 열반응기용 온도 제어 시스템 |
JPH11330468A (ja) | 1998-05-20 | 1999-11-30 | Hitachi Ltd | 半導体集積回路装置の製造方法および半導体集積回路装置 |
JP3447956B2 (ja) * | 1998-05-21 | 2003-09-16 | 富士通株式会社 | 光学的記憶装置 |
US6100188A (en) | 1998-07-01 | 2000-08-08 | Texas Instruments Incorporated | Stable and low resistance metal/barrier/silicon stack structure and related process for manufacturing |
US6355580B1 (en) | 1998-09-03 | 2002-03-12 | Micron Technology, Inc. | Ion-assisted oxidation methods and the resulting structures |
US6114258A (en) * | 1998-10-19 | 2000-09-05 | Applied Materials, Inc. | Method of oxidizing a substrate in the presence of nitride and oxynitride films |
US6335295B1 (en) | 1999-01-15 | 2002-01-01 | Lsi Logic Corporation | Flame-free wet oxidation |
US6184091B1 (en) * | 1999-02-01 | 2001-02-06 | Infineon Technologies North America Corp. | Formation of controlled trench top isolation layers for vertical transistors |
US6221791B1 (en) | 1999-06-02 | 2001-04-24 | Taiwan Semiconductor Manufacturing Company, Ltd | Apparatus and method for oxidizing silicon substrates |
NL1013667C2 (nl) * | 1999-11-25 | 2000-12-15 | Asm Int | Werkwijze en inrichting voor het vormen van een oxidelaag op wafers vervaardigd uit halfgeleidermateriaal. |
US6372663B1 (en) * | 2000-01-13 | 2002-04-16 | Taiwan Semiconductor Manufacturing Company, Ltd | Dual-stage wet oxidation process utilizing varying H2/O2 ratios |
US6534401B2 (en) * | 2000-04-27 | 2003-03-18 | Applied Materials, Inc. | Method for selectively oxidizing a silicon/metal composite film stack |
US6458714B1 (en) | 2000-11-22 | 2002-10-01 | Micron Technology, Inc. | Method of selective oxidation in semiconductor manufacture |
KR100441681B1 (ko) | 2001-03-12 | 2004-07-27 | 삼성전자주식회사 | 금속 게이트 형성 방법 |
DE10120523A1 (de) | 2001-04-26 | 2002-10-31 | Infineon Technologies Ag | Verfahren zur Minimierung der Wolframoxidausdampfung bei der selektiven Seitenwandoxidation von Wolfram-Silizium-Gates |
US6627501B2 (en) | 2001-05-25 | 2003-09-30 | Macronix International Co., Ltd. | Method of forming tunnel oxide layer |
US7115469B1 (en) * | 2001-12-17 | 2006-10-03 | Spansion, Llc | Integrated ONO processing for semiconductor devices using in-situ steam generation (ISSG) process |
US6908784B1 (en) | 2002-03-06 | 2005-06-21 | Micron Technology, Inc. | Method for fabricating encapsulated semiconductor components |
TW200416772A (en) | 2002-06-06 | 2004-09-01 | Asml Us Inc | System and method for hydrogen-rich selective oxidation |
US6933241B2 (en) | 2002-06-06 | 2005-08-23 | Nec Corporation | Method for forming pattern of stacked film |
DE10236896B4 (de) | 2002-08-12 | 2010-08-12 | Mattson Thermal Products Gmbh | Vorrichtung und Verfahren zum thermischen Behandeln von Halbleiterwafern |
US6774012B1 (en) | 2002-11-08 | 2004-08-10 | Cypress Semiconductor Corp. | Furnace system and method for selectively oxidizing a sidewall surface of a gate conductor by oxidizing a silicon sidewall in lieu of a refractory metal sidewall |
US7189652B1 (en) | 2002-12-06 | 2007-03-13 | Cypress Semiconductor Corporation | Selective oxidation of gate stack |
US7229929B2 (en) | 2002-12-06 | 2007-06-12 | Cypress Semiconductor Corporation | Multi-layer gate stack |
US6927169B2 (en) * | 2002-12-19 | 2005-08-09 | Applied Materials Inc. | Method and apparatus to improve thickness uniformity of surfaces for integrated device manufacturing |
US6916744B2 (en) * | 2002-12-19 | 2005-07-12 | Applied Materials, Inc. | Method and apparatus for planarization of a material by growing a sacrificial film with customized thickness profile |
KR100482738B1 (ko) | 2002-12-30 | 2005-04-14 | 주식회사 하이닉스반도체 | 계면 반응이 억제된 적층 게이트전극 및 그를 구비한반도체 소자의 제조 방법 |
KR100616498B1 (ko) | 2003-07-26 | 2006-08-25 | 주식회사 하이닉스반도체 | 폴리/텅스텐 게이트 전극을 갖는 반도체 소자의 제조방법 |
US7235497B2 (en) | 2003-10-17 | 2007-06-26 | Micron Technology, Inc. | Selective oxidation methods and transistor fabrication methods |
CN100334688C (zh) * | 2003-12-27 | 2007-08-29 | 上海华虹(集团)有限公司 | 一种消除栅刻蚀横向凹槽的方法 |
JP4706260B2 (ja) * | 2004-02-25 | 2011-06-22 | 東京エレクトロン株式会社 | 被処理体の酸化方法、酸化装置及び記憶媒体 |
KR20050094183A (ko) * | 2004-03-22 | 2005-09-27 | 삼성전자주식회사 | 화학 기상 증착 장치 및 이를 이용한 산화막 형성 방법 |
JP4609098B2 (ja) * | 2004-03-24 | 2011-01-12 | 東京エレクトロン株式会社 | 被処理体の酸化方法、酸化装置及び記憶媒体 |
KR100586009B1 (ko) | 2004-05-31 | 2006-06-01 | 삼성전자주식회사 | 반도체 장치의 제조 방법 및 이를 수행하기 위한 장치 |
US7521378B2 (en) * | 2004-07-01 | 2009-04-21 | Micron Technology, Inc. | Low temperature process for polysilazane oxidation/densification |
US7326655B2 (en) * | 2005-09-29 | 2008-02-05 | Tokyo Electron Limited | Method of forming an oxide layer |
TWI264797B (en) | 2005-11-07 | 2006-10-21 | Ind Tech Res Inst | Self-alignment dual-layer silicon-metal nano-grain memory device, fabricating method thereof and memory containing the same |
US7951728B2 (en) * | 2007-09-24 | 2011-05-31 | Applied Materials, Inc. | Method of improving oxide growth rate of selective oxidation processes |
TWI371110B (en) * | 2008-09-16 | 2012-08-21 | Nexpower Technology Corp | Translucent solar cell and manufacturing method thereof |
-
2007
- 2007-09-24 US US11/860,161 patent/US7951728B2/en active Active
-
2008
- 2008-09-19 EP EP19170626.6A patent/EP3540763A1/en active Pending
- 2008-09-19 EP EP08164739.8A patent/EP2040287B1/en active Active
- 2008-09-23 SG SG200807086-4A patent/SG151226A1/en unknown
- 2008-09-24 CN CN201410386390.0A patent/CN104269343A/zh active Pending
- 2008-09-24 TW TW100132118A patent/TWI436425B/zh active
- 2008-09-24 TW TW97136758A patent/TWI389206B/zh active
- 2008-09-24 JP JP2008244684A patent/JP5451018B2/ja active Active
- 2008-09-24 CN CNA2008101612480A patent/CN101404253A/zh active Pending
- 2008-09-24 KR KR20080093627A patent/KR101028441B1/ko active IP Right Grant
-
2011
- 2011-05-27 US US13/117,931 patent/US8546271B2/en active Active
- 2011-09-15 JP JP2011201340A patent/JP2012044192A/ja active Pending
-
2013
- 2013-10-01 US US14/043,505 patent/US9117661B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TWI389206B (zh) | 2013-03-11 |
CN104269343A (zh) | 2015-01-07 |
KR101028441B1 (ko) | 2011-04-14 |
US7951728B2 (en) | 2011-05-31 |
JP2009158918A (ja) | 2009-07-16 |
US9117661B2 (en) | 2015-08-25 |
US20090081884A1 (en) | 2009-03-26 |
SG151226A1 (en) | 2009-04-30 |
JP2012044192A (ja) | 2012-03-01 |
CN101404253A (zh) | 2009-04-08 |
EP2040287A2 (en) | 2009-03-25 |
TW201207939A (en) | 2012-02-16 |
EP3540763A1 (en) | 2019-09-18 |
US20140057455A1 (en) | 2014-02-27 |
US8546271B2 (en) | 2013-10-01 |
KR20090031658A (ko) | 2009-03-27 |
TWI436425B (zh) | 2014-05-01 |
EP2040287A3 (en) | 2012-08-08 |
TW200926298A (en) | 2009-06-16 |
EP2040287B1 (en) | 2019-06-05 |
US20110230060A1 (en) | 2011-09-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5451018B2 (ja) | 選択的酸化プロセスの酸化物成長速度の改良方法 | |
US10714333B2 (en) | Apparatus and method for selective oxidation at lower temperature using remote plasma source | |
KR100966086B1 (ko) | 반도체장치의 제조 방법 및 기판처리장치 | |
JP4706260B2 (ja) | 被処理体の酸化方法、酸化装置及び記憶媒体 | |
JP2012094879A (ja) | シリコン/金属複合膜堆積物を選択的に酸化するための方法及び装置 | |
JP2009533846A (ja) | 膜緻密化及び改善されたギャップ充填のための薄膜の多段階アニール | |
JP4748042B2 (ja) | 熱処理方法、熱処理装置及び記憶媒体 | |
US7094637B2 (en) | Method for minimizing the vapor deposition of tungsten oxide during the selective side wall oxidation of tungsten-silicon gates | |
JP2010109335A (ja) | シリコン酸化膜の除去方法及び処理装置 | |
JP5599623B2 (ja) | 堆積チャンバにおける酸化からの導電体の保護 | |
JP5264163B2 (ja) | 絶縁膜の形成方法 | |
JP2009158783A (ja) | 絶縁膜の形成方法 | |
JP2005268576A (ja) | 容量絶縁膜の成膜方法 | |
JP2000031065A (ja) | 基板処理装置及び基板処理方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20101130 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20101210 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110915 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110915 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20110915 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20111028 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111122 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120215 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120220 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120321 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120326 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120418 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20120724 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121119 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20121127 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121218 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130314 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130319 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130412 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130806 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131105 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20131203 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20131226 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5451018 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |