JP2009158918A - 選択的酸化プロセスの酸化物成長速度の改良方法 - Google Patents
選択的酸化プロセスの酸化物成長速度の改良方法 Download PDFInfo
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Abstract
【解決手段】 一態様において、急速熱処理装置を用いて、水素を多く含む雰囲気中で高圧においてインサイチュで水蒸気を生成させることによって基板を選択的に酸化する。基板における金属やバリヤ層のような他の物質は酸化されない。
【選択図】 図3A
Description
[0001]本発明の実施形態は、一般的には、半導体製造の分野に関し、更に詳細には、シリコン/金属複合膜の選択的酸化のための方法及び装置に関する。
[0002]半導体デバイスの製造において、シリコン含有基板の酸化は、重要な役割を果たしている。例えば、標準的な半導体デバイスにおいて、ゲート酸化物層は、普通は、ソース領域とドレイン領域と介在シリコン又はポリシリコン領域を含有する基板の上に位置する。金属コンタクトは、ソース領域とドレイン領域の上に堆積され、導電層はゲート酸化物の上に堆積される。全体の構造は、層のスタックとしてしばしば示される。ゲート酸化物全体に電圧を印加して電界が基板からゲート酸化物を通って導電層に軸に沿って生じる場合、ソース領域とドレイン領域間の領域の電気特性が変化し、領域間の電子の流れを入れたり、止めたりする。従って、ゲート酸化物層は、半導体デバイスの構造において極めて重要な役割を果たしている。
[0040]シリコン/金属複合膜の選択的酸化の方法及び装置に関する本発明の実施形態を記載してきた。半導体デバイスにおけるシリコン含有物質は、高圧インサイチュ水蒸気生成によって、金属層のようなデバイスの他の層を酸化させずに急速に酸化させる。上記は本発明の実施形態に関するが、本発明の他の多くの実施形態が本発明の基本的範囲から逸脱することなく構成されてもよい。本発明の範囲は、以下の特許請求の範囲によって決定される。
Claims (15)
- 複合基板の物質を選択的に酸化する方法であって:
該複合基板をチャンバ内に配置するステップと;
該チャンバにガス混合物を導入するステップであって、該ガス混合物が酸素含有ガスと65容積%を超える水素含有ガスを含む、前記ステップと;
該チャンバを250トール〜800トールの圧力に加圧するステップと;
該チャンバを所定の温度に所定の時間加熱して該水素含有ガスと該酸素含有ガスを該チャンバ内部で反応させ、該複合基板を選択的に酸化させるステップと;
を含む、前記方法。 - 該水素含有ガスの量が、該ガス混合物の量の70%〜90容積%である、請求項1に記載の方法。
- 該所定の温度が700℃を超える、請求項1に記載の方法。
- 該水素含有ガスと該酸素含有ガスを該チャンバの外部で混合して、該ガス混合物を生成させる、請求項1に記載の方法。
- 該圧力が少なくとも450トールである、請求項2に記載の方法。
- 該複合基板を選択的に酸化するステップが、シリコン含有物質のみを酸化する工程を含む、請求項3に記載の方法。
- 該複合基板が、一つ以上のシリコン含有物質層と一つ以上の金属含有物質層を持つ基板を構成する、請求項1に記載の方法。
- 基板を処理する方法であって:
該基板を急速熱処理(RTP)チャンバ内に配置するステップと;
該チャンバに非反応性ガスを導入するステップと;
該チャンバに水素含有ガスの量と酸素含有ガスの量を導入してガス混合物を形成するステップであって、該ガス混合物が水素を多く含むガス混合物を含む、前記ステップと;
該チャンバを250トールを超える圧力に加圧するステップと;
該チャンバを処理温度に加熱して該ガス混合物を該チャンバ内部で反応させるステップと;
該基板を選択的に酸化させるステップと;
を含む、前記方法。 - 該水素含有ガスの該量が、該水素を多く含むガス混合物の該量の70%〜90容積%である、請求項8に記載の方法。
- 該水素含有ガスの該量に対する比率を指定することによって該酸素含有ガスの該量を制御するステップを更に含む、請求項8に記載の方法。
- 該圧力が少なくとも450トールである、請求項9に記載の方法。
- 少なくともシリコン含有層と金属層を備える基板をチャンバ内で処理する方法であって:
該チャンバに水素を多く含むガス混合物を導入するステップと;
該チャンバを250トールを超える圧力に加圧するステップと;
該水素を多く含むガス混合物を該チャンバ内部で反応させて水蒸気を生成させるステップと;
該シリコン含有層を選択的に酸化するステップと;
を含む、前記方法。 - 該水素を多く含むガスが、非反応性ガスと、酸素含有ガスと、65容積%を超える水素ガス(H2)を含み、ここで、該非反応性ガスが、ヘリウム(He)、窒素ガス(N2)、アルゴン(Ar)、ネオン(Ne)、キセノン(Xe)、及びこれらの組合わせからなる群より選ばれる、請求項12に記載の方法。
- 該水素ガス(H2)の量が該水素を多く含むガスの量の65%〜85容積%であり、該圧力が少なくとも450トールである、請求項12に記載の方法。
- 該金属層が、タングステン(W)、窒化タングステン(WN)、チタン(Ti)、窒化チタン(TiN)、タンタル(Ta)、窒化タンタル(TaN)、コバルト(Co)、又はこれらの組合わせを含む、請求項12に記載の方法。
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JP2011029415A (ja) * | 2009-07-27 | 2011-02-10 | Tokyo Electron Ltd | 選択酸化処理方法、選択酸化処理装置およびコンピュータ読み取り可能な記憶媒体 |
KR20140135744A (ko) * | 2012-02-13 | 2014-11-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판의 선택적 산화를 위한 방법 및 장치 |
JP2015511403A (ja) * | 2012-02-13 | 2015-04-16 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 基板の選択性酸化のための方法および装置 |
KR102028779B1 (ko) * | 2012-02-13 | 2019-10-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판의 선택적 산화를 위한 방법 및 장치 |
JP2014027287A (ja) * | 2013-08-28 | 2014-02-06 | Yuutekku:Kk | 水蒸気加圧急速加熱装置、酸化物材料膜の製造方法及びpzt膜の製造方法 |
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US20110230060A1 (en) | 2011-09-22 |
US8546271B2 (en) | 2013-10-01 |
SG151226A1 (en) | 2009-04-30 |
KR101028441B1 (ko) | 2011-04-14 |
JP2012044192A (ja) | 2012-03-01 |
EP2040287A2 (en) | 2009-03-25 |
TWI389206B (zh) | 2013-03-11 |
US7951728B2 (en) | 2011-05-31 |
US20090081884A1 (en) | 2009-03-26 |
JP5451018B2 (ja) | 2014-03-26 |
US20140057455A1 (en) | 2014-02-27 |
KR20090031658A (ko) | 2009-03-27 |
TW201207939A (en) | 2012-02-16 |
EP2040287A3 (en) | 2012-08-08 |
TW200926298A (en) | 2009-06-16 |
CN104269343A (zh) | 2015-01-07 |
TWI436425B (zh) | 2014-05-01 |
US9117661B2 (en) | 2015-08-25 |
EP3540763A1 (en) | 2019-09-18 |
CN101404253A (zh) | 2009-04-08 |
EP2040287B1 (en) | 2019-06-05 |
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