KR102028779B1 - 기판의 선택적 산화를 위한 방법 및 장치 - Google Patents

기판의 선택적 산화를 위한 방법 및 장치 Download PDF

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KR102028779B1
KR102028779B1 KR1020147025561A KR20147025561A KR102028779B1 KR 102028779 B1 KR102028779 B1 KR 102028779B1 KR 1020147025561 A KR1020147025561 A KR 1020147025561A KR 20147025561 A KR20147025561 A KR 20147025561A KR 102028779 B1 KR102028779 B1 KR 102028779B1
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substrate
temperature
chamber
gas
exposing
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KR20140135744A (ko
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아구스 트잔드라
크리스토퍼 에스. 올센
요하네스 스웬버그
라라 하우릴차크
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Formation Of Insulating Films (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
KR1020147025561A 2012-02-13 2013-02-11 기판의 선택적 산화를 위한 방법 및 장치 Active KR102028779B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261597900P 2012-02-13 2012-02-13
US61/597,900 2012-02-13
US13/764,137 US8993458B2 (en) 2012-02-13 2013-02-11 Methods and apparatus for selective oxidation of a substrate
PCT/US2013/025577 WO2013122874A1 (en) 2012-02-13 2013-02-11 Methods and apparatus for selective oxidation of a substrate
US13/764,137 2013-02-11

Publications (2)

Publication Number Publication Date
KR20140135744A KR20140135744A (ko) 2014-11-26
KR102028779B1 true KR102028779B1 (ko) 2019-10-04

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US (2) US8993458B2 (https=)
JP (1) JP6254098B2 (https=)
KR (1) KR102028779B1 (https=)
CN (1) CN104106128B (https=)
WO (1) WO2013122874A1 (https=)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106637048A (zh) * 2016-12-29 2017-05-10 常州大学 一种低露点下选择性氧化薄膜的制备方法
TWI700750B (zh) * 2017-01-24 2020-08-01 美商應用材料股份有限公司 用於介電薄膜的選擇性沉積之方法及設備
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10847360B2 (en) 2017-05-25 2020-11-24 Applied Materials, Inc. High pressure treatment of silicon nitride film
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
JP7190450B2 (ja) 2017-06-02 2022-12-15 アプライド マテリアルズ インコーポレイテッド 炭化ホウ素ハードマスクのドライストリッピング
JP6947914B2 (ja) 2017-08-18 2021-10-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧高温下のアニールチャンバ
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
SG11202001450UA (en) 2017-09-12 2020-03-30 Applied Materials Inc Apparatus and methods for manufacturing semiconductor structures using protective barrier layer
US10643867B2 (en) 2017-11-03 2020-05-05 Applied Materials, Inc. Annealing system and method
EP4321649B1 (en) 2017-11-11 2025-08-20 Micromaterials LLC Gas delivery system for high pressure processing chamber
JP7330181B2 (ja) 2017-11-16 2023-08-21 アプライド マテリアルズ インコーポレイテッド 高圧蒸気アニール処理装置
JP2021503714A (ja) 2017-11-17 2021-02-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧処理システムのためのコンデンサシステム
TW202321493A (zh) 2017-12-20 2023-06-01 美商應用材料股份有限公司 金屬薄膜之高壓氧化
KR102649241B1 (ko) 2018-01-24 2024-03-18 어플라이드 머티어리얼스, 인코포레이티드 고압 어닐링을 사용한 심 힐링
SG11202008256WA (en) 2018-03-09 2020-09-29 Applied Materials Inc High pressure annealing process for metal containing materials
US10714331B2 (en) 2018-04-04 2020-07-14 Applied Materials, Inc. Method to fabricate thermally stable low K-FinFET spacer
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10566188B2 (en) 2018-05-17 2020-02-18 Applied Materials, Inc. Method to improve film stability
US10704141B2 (en) 2018-06-01 2020-07-07 Applied Materials, Inc. In-situ CVD and ALD coating of chamber to control metal contamination
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US10675581B2 (en) 2018-08-06 2020-06-09 Applied Materials, Inc. Gas abatement apparatus
KR102528076B1 (ko) 2018-10-30 2023-05-03 어플라이드 머티어리얼스, 인코포레이티드 반도체 응용들을 위한 구조를 식각하기 위한 방법들
WO2020101935A1 (en) 2018-11-16 2020-05-22 Applied Materials, Inc. Film deposition using enhanced diffusion process
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
US11322347B2 (en) 2018-12-14 2022-05-03 Applied Materials, Inc. Conformal oxidation processes for 3D NAND
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
US11996305B2 (en) * 2021-06-29 2024-05-28 Applied Materials, Inc. Selective oxidation on rapid thermal processing (RTP) chamber with active steam generation

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002324792A (ja) * 1997-07-11 2002-11-08 Applied Materials Inc インシチュウ気相生成方法及び装置
JP2009158918A (ja) * 2007-09-24 2009-07-16 Applied Materials Inc 選択的酸化プロセスの酸化物成長速度の改良方法
JP2010510670A (ja) 2006-11-21 2010-04-02 アプライド マテリアルズ インコーポレイテッド 低温ｃｖｄシステムにおいて前駆物質解離制御のために予熱する独立した放射ガス及びガス反応速度論

Family Cites Families (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2814009B2 (ja) 1990-06-05 1998-10-22 三菱電機株式会社 半導体装置の製造方法
JPH07118522B2 (ja) 1990-10-24 1995-12-18 インターナショナル・ビジネス・マシーンズ・コーポレイション 基板表面を酸化処理するための方法及び半導体の構造
KR940009597B1 (ko) * 1991-08-22 1994-10-15 삼성전자 주식회사 반도체장치의 게이트산화막 형성법
JPH05343391A (ja) 1992-06-04 1993-12-24 Fujitsu Ltd 半導体装置の製造方法
JP3271407B2 (ja) * 1993-12-24 2002-04-02 ソニー株式会社 熱処理方法及び熱処理装置
JPH07273101A (ja) * 1994-03-31 1995-10-20 Tokyo Electron Ltd 枚葉式熱処理装置
JP3383140B2 (ja) 1995-10-02 2003-03-04 株式会社東芝 不揮発性半導体記憶装置の製造方法
JP3084232B2 (ja) * 1996-06-04 2000-09-04 イートン コーポレーション 縦型加熱処理装置
US6071572A (en) 1996-10-15 2000-06-06 Applied Materials, Inc. Forming tin thin films using remote activated specie generation
US5800621A (en) 1997-02-10 1998-09-01 Applied Materials, Inc. Plasma source for HDP-CVD chamber
JPH10313004A (ja) * 1997-05-09 1998-11-24 Oki Electric Ind Co Ltd 半導体装置の製造方法
KR100477402B1 (ko) 1997-11-20 2005-03-22 동경 엘렉트론 주식회사 플라즈마 박막 증착 방법
FR2777115B1 (fr) * 1998-04-07 2001-07-13 Commissariat Energie Atomique Procede de traitement de substrats semi-conducteurs et structures obtenues par ce procede
US6114258A (en) * 1998-10-19 2000-09-05 Applied Materials, Inc. Method of oxidizing a substrate in the presence of nitride and oxynitride films
US6159835A (en) 1998-12-18 2000-12-12 Texas Instruments Incorporated Encapsulated low resistance gate structure and method for forming same
US6450116B1 (en) 1999-04-22 2002-09-17 Applied Materials, Inc. Apparatus for exposing a substrate to plasma radicals
US6348420B1 (en) 1999-12-23 2002-02-19 Asm America, Inc. Situ dielectric stacks
TW520453B (en) 1999-12-27 2003-02-11 Seiko Epson Corp A method to fabricate thin insulating films
JP4222707B2 (ja) 2000-03-24 2009-02-12 東京エレクトロン株式会社 プラズマ処理装置及び方法、ガス供給リング及び誘電体
US6598559B1 (en) * 2000-03-24 2003-07-29 Applied Materials, Inc. Temperature controlled chamber
US6638876B2 (en) 2000-09-19 2003-10-28 Mattson Technology, Inc. Method of forming dielectric films
US6458714B1 (en) 2000-11-22 2002-10-01 Micron Technology, Inc. Method of selective oxidation in semiconductor manufacture
US6617266B2 (en) 2001-04-12 2003-09-09 Applied Materials, Inc. Barium strontium titanate annealing process
US6596653B2 (en) 2001-05-11 2003-07-22 Applied Materials, Inc. Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD
US6627501B2 (en) 2001-05-25 2003-09-30 Macronix International Co., Ltd. Method of forming tunnel oxide layer
US6753506B2 (en) 2001-08-23 2004-06-22 Axcelis Technologies System and method of fast ambient switching for rapid thermal processing
JP2003086569A (ja) 2001-09-12 2003-03-20 Tokyo Electron Ltd プラズマ処理方法
US6716734B2 (en) 2001-09-28 2004-04-06 Infineon Technologies Ag Low temperature sidewall oxidation of W/WN/poly-gatestack
US6812515B2 (en) 2001-11-26 2004-11-02 Hynix Semiconductor, Inc. Polysilicon layers structure and method of forming same
US7220312B2 (en) 2002-03-13 2007-05-22 Micron Technology, Inc. Methods for treating semiconductor substrates
TWI225668B (en) 2002-05-13 2004-12-21 Tokyo Electron Ltd Substrate processing method
US20030232507A1 (en) 2002-06-12 2003-12-18 Macronix International Co., Ltd. Method for fabricating a semiconductor device having an ONO film
US7566929B2 (en) 2002-07-05 2009-07-28 Samsung Electronics Co., Ltd. Nonvolatile memory devices having floating gate electrodes with nitrogen-doped layers on portions thereof
US20040077142A1 (en) 2002-10-17 2004-04-22 Taiwan Semiconductor Manufacturing Co., Ltd. Atomic layer deposition and plasma treatment method for forming microelectronic capacitor structure with aluminum oxide containing dual dielectric layer
US6806202B2 (en) 2002-12-03 2004-10-19 Motorola, Inc. Method of removing silicon oxide from a surface of a substrate
US6803275B1 (en) 2002-12-03 2004-10-12 Fasl, Llc ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devices
US7189652B1 (en) 2002-12-06 2007-03-13 Cypress Semiconductor Corporation Selective oxidation of gate stack
KR100497607B1 (ko) 2003-02-17 2005-07-01 삼성전자주식회사 박막 형성 방법 및 박막 증착 장치
JP2004335957A (ja) * 2003-05-12 2004-11-25 Trecenti Technologies Inc 半導体装置の製造方法
JP4694108B2 (ja) 2003-05-23 2011-06-08 東京エレクトロン株式会社 酸化膜形成方法、酸化膜形成装置および電子デバイス材料
US6958112B2 (en) 2003-05-27 2005-10-25 Applied Materials, Inc. Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation
US7179754B2 (en) 2003-05-28 2007-02-20 Applied Materials, Inc. Method and apparatus for plasma nitridation of gate dielectrics using amplitude modulated radio-frequency energy
US7534709B2 (en) 2003-05-29 2009-05-19 Samsung Electronics Co., Ltd. Semiconductor device and method of manufacturing the same
KR100471407B1 (ko) 2003-06-30 2005-03-14 주식회사 하이닉스반도체 폴리메탈 게이트 전극을 갖는 트랜지스터 제조 방법
KR100616498B1 (ko) 2003-07-26 2006-08-25 주식회사 하이닉스반도체 폴리/텅스텐 게이트 전극을 갖는 반도체 소자의 제조방법
US6982196B2 (en) 2003-11-04 2006-01-03 International Business Machines Corporation Oxidation method for altering a film structure and CMOS transistor structure formed therewith
US6955964B2 (en) 2003-11-05 2005-10-18 Promos Technologies, Inc. Formation of a double gate structure
US20050101147A1 (en) 2003-11-08 2005-05-12 Advanced Micro Devices, Inc. Method for integrating a high-k gate dielectric in a transistor fabrication process
US7115530B2 (en) 2003-12-03 2006-10-03 Texas Instruments Incorporated Top surface roughness reduction of high-k dielectric materials using plasma based processes
US8227019B2 (en) 2003-12-15 2012-07-24 Superpower Inc. High-throughput ex-situ method for rare-earth-barium-copper-oxide (REBCO) film growth
US7981785B2 (en) 2004-03-01 2011-07-19 Tokyo Electron Limited Method for manufacturing semiconductor device and plasma oxidation method
US7497959B2 (en) 2004-05-11 2009-03-03 International Business Machines Corporation Methods and structures for protecting one area while processing another area on a chip
US7229931B2 (en) 2004-06-16 2007-06-12 Applied Materials, Inc. Oxygen plasma treatment for enhanced HDP-CVD gapfill
US8105958B2 (en) 2004-08-13 2012-01-31 Tokyo Electron Limited Semiconductor device manufacturing method and plasma oxidation treatment method
KR100580587B1 (ko) 2004-09-07 2006-05-16 삼성전자주식회사 반도체 장치의 제조 방법
US7521316B2 (en) 2004-09-09 2009-04-21 Samsung Electronics Co., Ltd. Methods of forming gate structures for semiconductor devices
US20060105114A1 (en) 2004-11-16 2006-05-18 White John M Multi-layer high quality gate dielectric for low-temperature poly-silicon TFTs
US7141514B2 (en) 2005-02-02 2006-11-28 Applied Materials, Inc. Selective plasma re-oxidation process using pulsed RF source power
US7214628B2 (en) 2005-02-02 2007-05-08 Applied Materials, Inc. Plasma gate oxidation process using pulsed RF source power
KR100966086B1 (ko) * 2005-03-08 2010-06-28 가부시키가이샤 히다치 고쿠사이 덴키 반도체장치의 제조 방법 및 기판처리장치
KR100900073B1 (ko) 2005-03-16 2009-05-28 가부시키가이샤 히다치 고쿠사이 덴키 기판처리방법 및 기판처리장치
US7972441B2 (en) 2005-04-05 2011-07-05 Applied Materials, Inc. Thermal oxidation of silicon using ozone
KR100678632B1 (ko) 2005-06-23 2007-02-05 삼성전자주식회사 반도체 집적 회로 장치의 제조 방법
KR100689679B1 (ko) 2005-09-22 2007-03-09 주식회사 하이닉스반도체 반도체 소자 제조 방법
US7355240B2 (en) 2005-09-22 2008-04-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor product including logic, non-volatile memory and volatile memory devices and method for fabrication thereof
US7888217B2 (en) 2005-10-20 2011-02-15 Applied Materials, Inc. Method for fabricating a gate dielectric of a field effect transistor
US7727828B2 (en) * 2005-10-20 2010-06-01 Applied Materials, Inc. Method for fabricating a gate dielectric of a field effect transistor
US20080011426A1 (en) 2006-01-30 2008-01-17 Applied Materials, Inc. Plasma reactor with inductively coupled source power applicator and a high temperature heated workpiece support
KR100956705B1 (ko) 2006-02-28 2010-05-06 도쿄엘렉트론가부시키가이샤 플라즈마 산화 처리 방법 및 반도체 장치의 제조 방법
US7799637B2 (en) 2006-06-26 2010-09-21 Sandisk Corporation Scaled dielectric enabled by stack sidewall process
US7407871B2 (en) 2006-09-05 2008-08-05 Tech Semiconductor Singapore Pte Ltd Method for passivation of plasma etch defects in DRAM devices
KR100757333B1 (ko) 2006-10-12 2007-09-11 삼성전자주식회사 불휘발성 메모리 장치의 제조 방법
JP5283147B2 (ja) 2006-12-08 2013-09-04 国立大学法人東北大学 半導体装置および半導体装置の製造方法
JP2009010144A (ja) * 2007-06-27 2009-01-15 Hitachi Kokusai Electric Inc 基板処理装置
JP5343391B2 (ja) 2007-07-17 2013-11-13 デクセリアルズ株式会社 樹脂組成物及び画像表示装置
US7645709B2 (en) 2007-07-30 2010-01-12 Applied Materials, Inc. Methods for low temperature oxidation of a semiconductor device
US7749849B2 (en) 2007-12-18 2010-07-06 Micron Technology, Inc. Methods of selectively oxidizing semiconductor structures, and structures resulting therefrom
KR20100114037A (ko) 2007-12-20 2010-10-22 어플라이드 머티어리얼스, 인코포레이티드 향상된 가스 유동 분포를 가진 열 반응기
WO2009114617A1 (en) 2008-03-14 2009-09-17 Applied Materials, Inc. Methods for oxidation of a semiconductor device
US20090269939A1 (en) 2008-04-25 2009-10-29 Asm International, N.V. Cyclical oxidation process
US20090311877A1 (en) 2008-06-14 2009-12-17 Applied Materials, Inc. Post oxidation annealing of low temperature thermal or plasma based oxidation
US8236706B2 (en) 2008-12-12 2012-08-07 Mattson Technology, Inc. Method and apparatus for growing thin oxide films on silicon while minimizing impact on existing structures
US20100297854A1 (en) 2009-04-22 2010-11-25 Applied Materials, Inc. High throughput selective oxidation of silicon and polysilicon using plasma at room temperature
US20110061812A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US20110061810A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US20110189860A1 (en) 2010-02-02 2011-08-04 Applied Materials, Inc. Methods for nitridation and oxidation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002324792A (ja) * 1997-07-11 2002-11-08 Applied Materials Inc インシチュウ気相生成方法及び装置
JP2010510670A (ja) 2006-11-21 2010-04-02 アプライド マテリアルズ インコーポレイテッド 低温ｃｖｄシステムにおいて前駆物質解離制御のために予熱する独立した放射ガス及びガス反応速度論
JP2009158918A (ja) * 2007-09-24 2009-07-16 Applied Materials Inc 選択的酸化プロセスの酸化物成長速度の改良方法

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