JP6215020B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6215020B2 JP6215020B2 JP2013245290A JP2013245290A JP6215020B2 JP 6215020 B2 JP6215020 B2 JP 6215020B2 JP 2013245290 A JP2013245290 A JP 2013245290A JP 2013245290 A JP2013245290 A JP 2013245290A JP 6215020 B2 JP6215020 B2 JP 6215020B2
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- A—HUMAN NECESSITIES
- A42—HEADWEAR
- A42B—HATS; HEAD COVERINGS
- A42B1/00—Hats; Caps; Hoods
- A42B1/18—Coverings for protecting hats, caps or hoods against dust, rain, or sunshine
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- A—HUMAN NECESSITIES
- A42—HEADWEAR
- A42B—HATS; HEAD COVERINGS
- A42B1/00—Hats; Caps; Hoods
- A42B1/018—Hats; Caps; Hoods with means for protecting the eyes, ears or nape, e.g. sun or rain shields; with air-inflated pads or removable linings
- A42B1/0186—Hats; Caps; Hoods with means for protecting the eyes, ears or nape, e.g. sun or rain shields; with air-inflated pads or removable linings with means for protecting the ears or nape
- A42B1/0188—Protection for the ears, e.g. removable ear muffs
-
- A—HUMAN NECESSITIES
- A42—HEADWEAR
- A42B—HATS; HEAD COVERINGS
- A42B1/00—Hats; Caps; Hoods
- A42B1/02—Hats; Stiff caps
-
- A—HUMAN NECESSITIES
- A42—HEADWEAR
- A42B—HATS; HEAD COVERINGS
- A42B3/00—Helmets; Helmet covers ; Other protective head coverings
- A42B3/04—Parts, details or accessories of helmets
- A42B3/06—Impact-absorbing shells, e.g. of crash helmets
- A42B3/062—Impact-absorbing shells, e.g. of crash helmets with reinforcing means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
- H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
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- D—TEXTILES; PAPER
- D10—INDEXING SCHEME ASSOCIATED WITH SUBLASSES OF SECTION D, RELATING TO TEXTILES
- D10B—INDEXING SCHEME ASSOCIATED WITH SUBLASSES OF SECTION D, RELATING TO TEXTILES
- D10B2501/00—Wearing apparel
- D10B2501/06—Details of garments
- D10B2501/063—Fasteners
- D10B2501/0632—Fasteners of the touch-and-close type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
半導体基板と、
前記半導体基板の表面に設けられたフィールド絶縁膜と、
前記フィールド絶縁膜の上に配置された抵抗体及びヒューズと、
前記ヒューズの上に設けられた第一の層間絶縁膜と、
前記第一の層間絶縁膜の上に設けられた第二の層間絶縁膜と、
前記第二の層間絶縁膜の上に設けられた、SOG層を間に有する第三の層間絶縁膜と、
前記第三の層間絶縁膜上に形成されたパッシベーション酸化膜と、
前記ヒューズの上に、前記パッシベーション酸化膜から前記第二の層間絶縁膜の途中まで、その間の膜を除去することで設けられたヒューズ開口部と、
前記パッシベーション酸化膜の上と前記ヒューズ開口部の側面および側底面を覆うパッシベーション窒化膜と、を有し、
前記ヒューズ開口部の底面において前記第二の層間絶縁膜が前記パッシベーション窒化膜から露出するように、前記パッシベーション窒化膜が除去されていることを特徴とする半導体装置とした。
図2は図1の切断線A−Aにおける半導体装置の模式断面図であり、図3は図1の切断線B−Bにおける半導体装置の模式断面図である。P型シリコン半導体基板101上にPMOS領域に形成されたN型ウエル拡散層102と、特に記載はしないがNMOS領域にP型ウエル拡散層を形成し、LOCOS法により形成された酸化膜のフィールド絶縁膜103を例えば4000〜8000Å程形成している。
102 N型ウエル拡散層
103、203 フィールド絶縁膜
104 ゲート絶縁膜
105 ゲート電極
106 ヒューズ
107 高抵抗抵抗体
108 P型高濃度不純物領域
109 抵抗体の低濃度領域
110 抵抗体の高濃度領域
111、211 第一の層間絶縁膜
112 接続孔
113 第一の金属配線
114、214 第二の層間絶縁膜
115 第二の金属配線
116、216 第三の層間絶縁膜
117、217 SOG層
118 第三の金属配線
119、219 パッシベーション酸化膜
120、220 パッシベーション窒化膜
121、221 ガードリング
122、222 ヒューズ開口部
123 パッシベーション窒化膜の開口部
Claims (5)
- 半導体基板と、
前記半導体基板の表面に設けられたフィールド絶縁膜と、
前記フィールド絶縁膜の上に配置された抵抗体及びヒューズと、
前記ヒューズの上に設けられた第一の層間絶縁膜と、
前記第一の層間絶縁膜の上に設けられた第二の層間絶縁膜と、
前記第二の層間絶縁膜の上に設けられた、SOG層を間に有する第三の層間絶縁膜と、
前記第三の層間絶縁膜上に形成されたパッシベーション酸化膜と、
前記ヒューズの上に、前記パッシベーション酸化膜から前記第二の層間絶縁膜の途中まで、その間の膜を除去することで設けられたヒューズ開口部と、
前記パッシベーション酸化膜の上と前記ヒューズ開口部の側面および側底面を覆うパッシベーション窒化膜と、
を有し、
前記ヒューズ開口部の底面において前記第二の層間絶縁膜が前記パッシベーション窒化膜から露出するように、前記パッシベーション窒化膜が除去されていて、前記パッシベーション窒化膜は前記ヒューズ開口部とは異なる形状の開口部を有し、
1つの前記ヒューズ開口部には、複数の前記パッシベーション窒化膜の開口部と複数の前記ヒューズが配置され、
複数の前記パッシベーション窒化膜の開口部は、複数の前記ヒューズのそれぞれが部分的に露出するように、前記ヒューズごとに独立して設けられていることを特徴とする半導体装置。 - 前記ヒューズは第一の多結晶シリコンにより形成されていることを特徴とする請求項1記載の半導体装置。
- 前記抵抗体は前記第一の多結晶シリコンとは異なる第二の多結晶シリコンから形成されていることを特徴とする請求項2記載の半導体装置。
- 前記ヒューズ開口部の周囲を取り囲む、金属配線材料からなるガードリングをさらに有することを特徴とする請求項1乃至3のいずれか1項に記載の半導体装置。
- 前記第一の層間絶縁膜がBPSGおよびNSG層で形成され、前記第二の層間絶縁膜がプラズマTEOSシリコン酸化膜で形成され、前記第三の層間絶縁膜がプラズマTEOSシリコン酸化膜とSOGとプラズマTEOSシリコン酸化膜で構成されていることを特徴とする請求項1乃至4のいずれか1項に記載の半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2013245290A JP6215020B2 (ja) | 2013-01-25 | 2013-11-27 | 半導体装置 |
TW103101602A TWI618221B (zh) | 2013-01-25 | 2014-01-16 | 半導體裝置 |
KR1020140008320A KR102156820B1 (ko) | 2013-01-25 | 2014-01-23 | 반도체 장치 |
US14/161,894 US9570537B2 (en) | 2013-01-25 | 2014-01-23 | Semiconductor device |
CN201410033375.8A CN103972211B (zh) | 2013-01-25 | 2014-01-24 | 半导体装置 |
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JP2013012386 | 2013-01-25 | ||
JP2013012386 | 2013-01-25 | ||
JP2013245290A JP6215020B2 (ja) | 2013-01-25 | 2013-11-27 | 半導体装置 |
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JP2014160801A JP2014160801A (ja) | 2014-09-04 |
JP6215020B2 true JP6215020B2 (ja) | 2017-10-18 |
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US (1) | US9570537B2 (ja) |
JP (1) | JP6215020B2 (ja) |
KR (1) | KR102156820B1 (ja) |
CN (1) | CN103972211B (ja) |
TW (1) | TWI618221B (ja) |
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CN105789178A (zh) * | 2014-12-25 | 2016-07-20 | 中航(重庆)微电子有限公司 | 熔丝结构、包含该熔丝结构的半导体器件及制备方法 |
JP6557468B2 (ja) * | 2014-12-25 | 2019-08-07 | ローム株式会社 | チップ部品 |
JP6620023B2 (ja) * | 2015-03-12 | 2019-12-11 | エイブリック株式会社 | 半導体装置およびその製造方法 |
JP6620024B2 (ja) * | 2015-03-12 | 2019-12-11 | エイブリック株式会社 | 半導体装置 |
US9917055B2 (en) * | 2015-03-12 | 2018-03-13 | Sii Semiconductor Corporation | Semiconductor device having fuse element |
JP2016213293A (ja) * | 2015-05-01 | 2016-12-15 | エスアイアイ・セミコンダクタ株式会社 | 半導体集積回路装置 |
JP2017045839A (ja) * | 2015-08-26 | 2017-03-02 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP6926806B2 (ja) * | 2017-08-09 | 2021-08-25 | 富士電機株式会社 | 半導体装置及びその製造方法 |
US10651136B2 (en) * | 2017-09-05 | 2020-05-12 | Globalfoundries Inc. | Technique for decoupling plasma antennae from actual circuitry |
JP7158160B2 (ja) | 2018-03-05 | 2022-10-21 | エイブリック株式会社 | 半導体装置 |
JP7390841B2 (ja) * | 2019-09-30 | 2023-12-04 | エイブリック株式会社 | 半導体装置及びその製造方法 |
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US5879966A (en) * | 1994-09-06 | 1999-03-09 | Taiwan Semiconductor Manufacturing Company Ltd. | Method of making an integrated circuit having an opening for a fuse |
JPH08125023A (ja) * | 1994-10-28 | 1996-05-17 | Sony Corp | 半導体装置の製造方法 |
JP4015704B2 (ja) * | 1997-10-13 | 2007-11-28 | 富士通株式会社 | ヒューズを有する半導体装置およびその製造方法 |
KR100322543B1 (ko) * | 1999-08-31 | 2002-03-18 | 윤종용 | 퓨즈부의 흡습 방지 기능이 향상된 반도체 장치 및 그 퓨즈부의 제조방법 |
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KR100335498B1 (ko) * | 1999-12-22 | 2002-05-08 | 윤종용 | 반도체 소자의 퓨즈부 구조 및 그 형성방법 |
KR100425452B1 (ko) * | 2001-07-04 | 2004-03-30 | 삼성전자주식회사 | 반도체 소자의 리페어 퓨즈 개구 방법 |
JP3584928B2 (ja) * | 2002-01-16 | 2004-11-04 | セイコーエプソン株式会社 | 半導体装置 |
KR100463047B1 (ko) * | 2002-03-11 | 2004-12-23 | 삼성전자주식회사 | 반도체 장치의 퓨즈 박스 및 그 제조방법 |
JP2004179358A (ja) * | 2002-11-27 | 2004-06-24 | Mitsumi Electric Co Ltd | 半導体装置及びその製造方法 |
WO2006036000A1 (en) * | 2004-09-30 | 2006-04-06 | Ricoh Company, Ltd. | Semiconductor device and fabrication process thereof |
JP2007165569A (ja) * | 2005-12-14 | 2007-06-28 | Sharp Corp | 半導体装置 |
JP2008071991A (ja) * | 2006-09-15 | 2008-03-27 | Ricoh Co Ltd | 半導体装置及びその製造方法 |
JP5544812B2 (ja) * | 2009-10-02 | 2014-07-09 | 株式会社リコー | 半導体装置 |
US8350337B2 (en) * | 2009-12-29 | 2013-01-08 | United Microelectronics Corp. | Semiconductor device and method of forming the same |
JP2012004499A (ja) * | 2010-06-21 | 2012-01-05 | Seiko Instruments Inc | 半導体装置およびその製造方法 |
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2013
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CN103972211B (zh) | 2018-10-12 |
US20140210042A1 (en) | 2014-07-31 |
KR20140095990A (ko) | 2014-08-04 |
JP2014160801A (ja) | 2014-09-04 |
TWI618221B (zh) | 2018-03-11 |
KR102156820B1 (ko) | 2020-09-16 |
TW201448162A (zh) | 2014-12-16 |
CN103972211A (zh) | 2014-08-06 |
US9570537B2 (en) | 2017-02-14 |
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