JP6178499B2 - ダイナミックランダムアクセスメモリのスマートリフレッシュのための方法およびシステム - Google Patents

ダイナミックランダムアクセスメモリのスマートリフレッシュのための方法およびシステム Download PDF

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JP6178499B2
JP6178499B2 JP2016513993A JP2016513993A JP6178499B2 JP 6178499 B2 JP6178499 B2 JP 6178499B2 JP 2016513993 A JP2016513993 A JP 2016513993A JP 2016513993 A JP2016513993 A JP 2016513993A JP 6178499 B2 JP6178499 B2 JP 6178499B2
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refresh
value
memory
valid data
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JP2016524775A5 (enExample
JP2016524775A (ja
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ハウ−ジン・ロ
デクスター・チュン
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クアルコム，インコーポレイテッド
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40622—Partial refresh of memory arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40603—Arbitration, priority and concurrent access to memory cells for read/write or refresh operations
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40611—External triggering or timing of internal or partially internal refresh operations, e.g. auto-refresh or CAS-before-RAS triggered refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40626—Temperature related aspects of refresh operations
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4072—Circuits for initialization, powering up or down, clearing memory or presetting
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
JP2016513993A 2013-05-14 2014-05-09 ダイナミックランダムアクセスメモリのスマートリフレッシュのための方法およびシステム Active JP6178499B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/893,670 2013-05-14
US13/893,670 US9336855B2 (en) 2013-05-14 2013-05-14 Methods and systems for smart refresh of dynamic random access memory
PCT/US2014/037525 WO2014186229A1 (en) 2013-05-14 2014-05-09 Methods and systems for smart refresh of dynamic random access memory

Publications (3)

Publication Number Publication Date
JP2016524775A JP2016524775A (ja) 2016-08-18
JP2016524775A5 JP2016524775A5 (enExample) 2017-03-30
JP6178499B2 true JP6178499B2 (ja) 2017-08-09

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JP2016513993A Active JP6178499B2 (ja) 2013-05-14 2014-05-09 ダイナミックランダムアクセスメモリのスマートリフレッシュのための方法およびシステム

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Country Link
US (1) US9336855B2 (enExample)
EP (1) EP2997576B1 (enExample)
JP (1) JP6178499B2 (enExample)
KR (1) KR101834625B1 (enExample)
CN (1) CN105229743B (enExample)
TW (1) TWI525618B (enExample)
WO (1) WO2014186229A1 (enExample)

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CN111857560B (zh) * 2019-04-30 2024-06-28 伊姆西Ip控股有限责任公司 用于管理数据的方法、设备和计算机程序产品
KR102808579B1 (ko) 2019-10-16 2025-05-16 삼성전자주식회사 뉴럴 네트워크에서 연산을 수행하는 방법 및 장치
CN112965816B (zh) 2020-07-17 2023-06-02 华为技术有限公司 内存管理技术及计算机系统
KR20240049940A (ko) * 2022-10-11 2024-04-18 에스케이하이닉스 주식회사 리프레쉬 제어 회로를 포함하는 메모리 장치 및 그의 동작 방법
CN119068939A (zh) * 2023-05-25 2024-12-03 长鑫存储技术有限公司 存储器刷新方法及设备

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Also Published As

Publication number Publication date
TWI525618B (zh) 2016-03-11
EP2997576A1 (en) 2016-03-23
TW201510999A (zh) 2015-03-16
WO2014186229A1 (en) 2014-11-20
CN105229743A (zh) 2016-01-06
KR101834625B1 (ko) 2018-04-13
KR20160010518A (ko) 2016-01-27
US9336855B2 (en) 2016-05-10
JP2016524775A (ja) 2016-08-18
CN105229743B (zh) 2018-02-02
EP2997576B1 (en) 2016-11-16
US20140344513A1 (en) 2014-11-20

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