JP2016524775A5 - - Google Patents

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JP2016524775A5
JP2016524775A5 JP2016513993A JP2016513993A JP2016524775A5 JP 2016524775 A5 JP2016524775 A5 JP 2016524775A5 JP 2016513993 A JP2016513993 A JP 2016513993A JP 2016513993 A JP2016513993 A JP 2016513993A JP 2016524775 A5 JP2016524775 A5 JP 2016524775A5
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page
value
memory cells
valid data
lookup table
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JP2016513993A
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JP2016524775A (ja
JP6178499B2 (ja
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Priority claimed from US13/893,670 external-priority patent/US9336855B2/en
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JP2016513993A 2013-05-14 2014-05-09 ダイナミックランダムアクセスメモリのスマートリフレッシュのための方法およびシステム Active JP6178499B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/893,670 2013-05-14
US13/893,670 US9336855B2 (en) 2013-05-14 2013-05-14 Methods and systems for smart refresh of dynamic random access memory
PCT/US2014/037525 WO2014186229A1 (en) 2013-05-14 2014-05-09 Methods and systems for smart refresh of dynamic random access memory

Publications (3)

Publication Number Publication Date
JP2016524775A JP2016524775A (ja) 2016-08-18
JP2016524775A5 true JP2016524775A5 (enExample) 2017-03-30
JP6178499B2 JP6178499B2 (ja) 2017-08-09

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ID=50842406

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JP2016513993A Active JP6178499B2 (ja) 2013-05-14 2014-05-09 ダイナミックランダムアクセスメモリのスマートリフレッシュのための方法およびシステム

Country Status (7)

Country Link
US (1) US9336855B2 (enExample)
EP (1) EP2997576B1 (enExample)
JP (1) JP6178499B2 (enExample)
KR (1) KR101834625B1 (enExample)
CN (1) CN105229743B (enExample)
TW (1) TWI525618B (enExample)
WO (1) WO2014186229A1 (enExample)

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WO2013183155A1 (ja) * 2012-06-07 2013-12-12 富士通株式会社 選択的にメモリのリフレッシュを行う制御装置
US9355689B2 (en) * 2013-08-20 2016-05-31 Oracle International Corporation Detection of multiple accesses to a row address of a dynamic memory within a refresh period
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US9728245B2 (en) 2015-02-28 2017-08-08 Intel Corporation Precharging and refreshing banks in memory device with bank group architecture
KR102384344B1 (ko) 2015-06-03 2022-04-07 삼성전자주식회사 모바일 장치 및 모바일 장치의 동작 방법
KR102373544B1 (ko) 2015-11-06 2022-03-11 삼성전자주식회사 요청 기반의 리프레쉬를 수행하는 메모리 장치, 메모리 시스템 및 메모리 장치의 동작방법
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US10644004B2 (en) * 2018-02-13 2020-05-05 Advanced Micro Devices, Inc. Utilizing capacitors integrated with memory devices for charge detection to determine DRAM refresh
US10878880B2 (en) 2018-09-20 2020-12-29 Qualcomm Incorporated Selective volatile memory refresh via memory-side data valid indication
TWI671632B (zh) 2018-10-24 2019-09-11 財團法人工業技術研究院 記憶體裝置及其復新資訊同步方法
CN111857560B (zh) * 2019-04-30 2024-06-28 伊姆西Ip控股有限责任公司 用于管理数据的方法、设备和计算机程序产品
KR102808579B1 (ko) 2019-10-16 2025-05-16 삼성전자주식회사 뉴럴 네트워크에서 연산을 수행하는 방법 및 장치
CN112965816B (zh) 2020-07-17 2023-06-02 华为技术有限公司 内存管理技术及计算机系统
KR20240049940A (ko) * 2022-10-11 2024-04-18 에스케이하이닉스 주식회사 리프레쉬 제어 회로를 포함하는 메모리 장치 및 그의 동작 방법
CN119068939A (zh) * 2023-05-25 2024-12-03 长鑫存储技术有限公司 存储器刷新方法及设备

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