JP2016515269A5 - - Google Patents

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Publication number
JP2016515269A5
JP2016515269A5 JP2016501494A JP2016501494A JP2016515269A5 JP 2016515269 A5 JP2016515269 A5 JP 2016515269A5 JP 2016501494 A JP2016501494 A JP 2016501494A JP 2016501494 A JP2016501494 A JP 2016501494A JP 2016515269 A5 JP2016515269 A5 JP 2016515269A5
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JP
Japan
Prior art keywords
value
memory
timing
access request
memory access
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JP2016501494A
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English (en)
Japanese (ja)
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JP6059399B2 (ja
JP2016515269A (ja
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Priority claimed from US13/842,410 external-priority patent/US9224442B2/en
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Publication of JP2016515269A publication Critical patent/JP2016515269A/ja
Publication of JP2016515269A5 publication Critical patent/JP2016515269A5/ja
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Publication of JP6059399B2 publication Critical patent/JP6059399B2/ja
Expired - Fee Related legal-status Critical Current
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JP2016501494A 2013-03-15 2014-03-12 メモリデバイスのタイミングパラメータを動的に決定するためのシステムおよび方法 Expired - Fee Related JP6059399B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/842,410 2013-03-15
US13/842,410 US9224442B2 (en) 2013-03-15 2013-03-15 System and method to dynamically determine a timing parameter of a memory device
PCT/US2014/024311 WO2014150815A2 (en) 2013-03-15 2014-03-12 System and method to dynamically determine a timing parameter of a memory device

Publications (3)

Publication Number Publication Date
JP2016515269A JP2016515269A (ja) 2016-05-26
JP2016515269A5 true JP2016515269A5 (enExample) 2016-07-07
JP6059399B2 JP6059399B2 (ja) 2017-01-11

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ID=50543671

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JP2016501494A Expired - Fee Related JP6059399B2 (ja) 2013-03-15 2014-03-12 メモリデバイスのタイミングパラメータを動的に決定するためのシステムおよび方法

Country Status (6)

Country Link
US (1) US9224442B2 (enExample)
EP (1) EP2973576B1 (enExample)
JP (1) JP6059399B2 (enExample)
KR (1) KR101650042B1 (enExample)
CN (1) CN105190757B (enExample)
WO (1) WO2014150815A2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9530468B2 (en) * 2014-09-26 2016-12-27 Intel Corporation Method, apparatus and system to manage implicit pre-charge command signaling
CN108139994B (zh) * 2016-05-28 2020-03-20 华为技术有限公司 内存访问方法及内存控制器
KR20170141298A (ko) * 2016-06-14 2017-12-26 에스케이하이닉스 주식회사 데이터 저장 장치 및 그것의 동작 방법
US10877547B2 (en) 2016-11-18 2020-12-29 Ati Technologies Ulc Application profiling for power-performance management
US11210019B2 (en) * 2017-08-23 2021-12-28 Micron Technology, Inc. Memory with virtual page size
US10394456B2 (en) 2017-08-23 2019-08-27 Micron Technology, Inc. On demand memory page size
JP6891087B2 (ja) 2017-09-29 2021-06-18 株式会社小松製作所 作業車両、表示装置、および障害判定方法
US11079945B2 (en) * 2018-09-20 2021-08-03 Ati Technologies Ulc Dynamic configuration of memory timing parameters
CN111026258B (zh) * 2019-12-10 2020-12-15 深圳云天励飞技术有限公司 处理器及降低电源纹波的方法
US11183248B1 (en) * 2020-07-29 2021-11-23 Micron Technology, Inc. Timing parameter adjustment mechanisms
JP7614865B2 (ja) * 2021-02-02 2025-01-16 キヤノン株式会社 メモリコントローラ及びその制御方法
US20250278189A1 (en) * 2024-02-29 2025-09-04 Arm Limited Method and circuit for reducing processing latency

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8807849D0 (en) * 1988-04-05 1988-05-05 Int Computers Ltd Data processing apparatus with page mode memory
US5159676A (en) * 1988-12-05 1992-10-27 Micron Technology, Inc. Semi-smart DRAM controller IC to provide a pseudo-cache mode of operation using standard page mode draws
JPH08314795A (ja) * 1994-05-19 1996-11-29 Hitachi Ltd 記憶装置の読み出し回路及び記憶システム
US5848025A (en) * 1997-06-30 1998-12-08 Motorola, Inc. Method and apparatus for controlling a memory device in a page mode
KR100304705B1 (ko) 1999-03-03 2001-10-29 윤종용 포스티드 카스 레이턴시 기능을 가지는 동기식 반도체 메모리 장치 및 카스 레이턴시 제어 방법
KR100374637B1 (ko) 2000-10-24 2003-03-04 삼성전자주식회사 Ｊｅｄｅｃ 규격의 포스티드 카스 기능을 가지는 동기식반도체 메모리 장치
US6963516B2 (en) 2002-11-27 2005-11-08 International Business Machines Corporation Dynamic optimization of latency and bandwidth on DRAM interfaces
JP4085983B2 (ja) * 2004-01-27 2008-05-14 セイコーエプソン株式会社 情報処理装置およびメモリアクセス方法
US7650481B2 (en) 2004-11-24 2010-01-19 Qualcomm Incorporated Dynamic control of memory access speed
KR100671747B1 (ko) * 2006-01-04 2007-01-19 삼성전자주식회사 개선된 애디티브 레이턴시를 가진 메모리 시스템 및제어방법
US8195907B2 (en) 2007-12-21 2012-06-05 Rambus Inc. Timing adjustment in a reconfigurable system
US8463987B2 (en) 2008-09-23 2013-06-11 Intel Corporation Scalable schedulers for memory controllers
US8683164B2 (en) 2009-02-04 2014-03-25 Micron Technology, Inc. Stacked-die memory systems and methods for training stacked-die memory systems
US9245881B2 (en) 2009-03-17 2016-01-26 Qualcomm Incorporated Selective fabrication of high-capacitance insulator for a metal-oxide-metal capacitor
US20120284576A1 (en) 2011-05-06 2012-11-08 Housty Oswin E Hardware stimulus engine for memory receive and transmit signals
US8693269B2 (en) 2011-08-08 2014-04-08 Samsung Electronics Co., Ltd. Memory device for managing timing parameters
US9003256B2 (en) 2011-09-06 2015-04-07 Kingtiger Technology (Canada) Inc. System and method for testing integrated circuits by determining the solid timing window

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