CN101488117A - 一种预充电数据访问控制装置和方法 - Google Patents
一种预充电数据访问控制装置和方法 Download PDFInfo
- Publication number
- CN101488117A CN101488117A CNA2009100786117A CN200910078611A CN101488117A CN 101488117 A CN101488117 A CN 101488117A CN A2009100786117 A CNA2009100786117 A CN A2009100786117A CN 200910078611 A CN200910078611 A CN 200910078611A CN 101488117 A CN101488117 A CN 101488117A
- Authority
- CN
- China
- Prior art keywords
- access
- request
- write
- read
- field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 19
- 230000005540 biological transmission Effects 0.000 claims description 7
- NOTIQUSPUUHHEH-UXOVVSIBSA-N dromostanolone propionate Chemical compound C([C@@H]1CC2)C(=O)[C@H](C)C[C@]1(C)[C@@H]1[C@@H]2[C@@H]2CC[C@H](OC(=O)CC)[C@@]2(C)CC1 NOTIQUSPUUHHEH-UXOVVSIBSA-N 0.000 claims description 3
- 230000000977 initiatory effect Effects 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 239000003550 marker Substances 0.000 abstract 2
- 238000005516 engineering process Methods 0.000 description 20
- 238000010586 diagram Methods 0.000 description 6
- 230000001360 synchronised effect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
Images
Landscapes
- Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
- Memory System Of A Hierarchy Structure (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200910078611 CN101488117B (zh) | 2009-02-27 | 2009-02-27 | 一种预充电数据访问控制装置和方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200910078611 CN101488117B (zh) | 2009-02-27 | 2009-02-27 | 一种预充电数据访问控制装置和方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101488117A true CN101488117A (zh) | 2009-07-22 |
CN101488117B CN101488117B (zh) | 2013-01-30 |
Family
ID=40891017
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200910078611 Active CN101488117B (zh) | 2009-02-27 | 2009-02-27 | 一种预充电数据访问控制装置和方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101488117B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107515828A (zh) * | 2017-08-23 | 2017-12-26 | 维沃移动通信有限公司 | 一种数据读写方法及移动终端 |
CN112965816A (zh) * | 2020-07-17 | 2021-06-15 | 华为技术有限公司 | 内存管理技术及计算机系统 |
CN116185310A (zh) * | 2023-04-27 | 2023-05-30 | 中茵微电子(南京)有限公司 | 一种存储器数据读写调度方法及装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7124260B2 (en) * | 2002-08-26 | 2006-10-17 | Micron Technology, Inc. | Modified persistent auto precharge command protocol system and method for memory devices |
US20060090059A1 (en) * | 2004-10-21 | 2006-04-27 | Hsiang-I Huang | Methods and devices for memory paging management |
-
2009
- 2009-02-27 CN CN 200910078611 patent/CN101488117B/zh active Active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107515828A (zh) * | 2017-08-23 | 2017-12-26 | 维沃移动通信有限公司 | 一种数据读写方法及移动终端 |
CN107515828B (zh) * | 2017-08-23 | 2020-06-05 | 维沃移动通信有限公司 | 一种数据读写方法及移动终端 |
CN112965816A (zh) * | 2020-07-17 | 2021-06-15 | 华为技术有限公司 | 内存管理技术及计算机系统 |
CN116185310A (zh) * | 2023-04-27 | 2023-05-30 | 中茵微电子(南京)有限公司 | 一种存储器数据读写调度方法及装置 |
Also Published As
Publication number | Publication date |
---|---|
CN101488117B (zh) | 2013-01-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102207916B (zh) | 一种基于指令预取的多核共享存储器控制设备 | |
US20100325372A1 (en) | Parallel training of dynamic random access memory channel controllers | |
US10141039B2 (en) | Burst length defined page size | |
US7093059B2 (en) | Read-write switching method for a memory controller | |
CN106856098B (zh) | 一种用于DRAM或eDRAM刷新的装置及其方法 | |
KR101533957B1 (ko) | Dram 셀프 리프레쉬로부터의 고속 엑시트 | |
DE102008050308A1 (de) | Verfahren und Vorrichtung zur Speicherzugriffsoptimierung | |
US9417816B2 (en) | Partitionable memory interfaces | |
CN109814811B (zh) | 一种减小NVMe SSD响应延迟影响高速数据存储设备写入速度的方法 | |
US9552849B2 (en) | Memory device with timing overlap mode and precharge timing circuit | |
CN108762674A (zh) | 提升ssd响应延迟的方法及装置 | |
WO2020155074A1 (zh) | 一种处理装置、方法及相关设备 | |
CN107274926A (zh) | 具有自适应预充电策略的dram控制器 | |
CN101488117B (zh) | 一种预充电数据访问控制装置和方法 | |
US11216386B2 (en) | Techniques for setting a 2-level auto-close timer to access a memory device | |
CN103632708A (zh) | 同步动态随机存储器的自刷新控制装置及方法 | |
CN105045722B (zh) | 一种ddr2-sdram控制器及其低延迟优化方法 | |
CN102033832B (zh) | 一种同步动态存储器访存控制方法 | |
CN103365782A (zh) | 内存管理方法 | |
KR20030065276A (ko) | 반도체 기억장치 | |
CN102073604B (zh) | 一种同步动态存储器读写控制方法、装置和系统 | |
CN103914413A (zh) | 用于粗粒度可重构系统的外存访问接口及其访问方法 | |
US8301816B2 (en) | Memory access controller, system, and method | |
US11886290B2 (en) | Information processing apparatus and information processing method for error correction and read modify write processing | |
US20160239211A1 (en) | Programming memory controllers to allow performance of active memory operations |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: WUXI VIMICRO CORP. Free format text: FORMER OWNER: BEIJING ZHONGXING MICROELECTRONICS CO., LTD. Effective date: 20110602 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100083 15/F, SHINING BUILDING, NO. 35, XUEYUAN ROAD, HAIDIAN DISTRICT, BEIJING TO: 214028 610, NATIONAL INTEGRATED CIRCUIT DESIGN PARK (CHUANGYUAN BUILDING), NO. 21-1, CHANGJIANG ROAD, WUXI NEW DISTRICT, JIANGSU PROVINCE, CHINA |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20110602 Address after: 214028 national integrated circuit design Park, 21-1 Changjiang Road, New District, Jiangsu, Wuxi, China, 610 Applicant after: Wuxi Vimicro Co., Ltd. Address before: 100083, Haidian District, Xueyuan Road, Beijing No. 35, Nanjing Ning building, 15 Floor Applicant before: Beijing Vimicro Corporation |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: NANTONG CHONGCHUAN SCIENCE AND TECHNOLOGY PARK INV Free format text: FORMER OWNER: WUXI VIMICRO CO., LTD. Effective date: 20150120 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; TO: 226006 NANTONG, JIANGSU PROVINCE |
|
TR01 | Transfer of patent right |
Effective date of registration: 20150120 Address after: Jiangsu province Nantong City Chongchuan road 226006 No. 1 Patentee after: Nantong city science and technology park investment and Development Co. Ltd. Address before: National integrated circuit design Park (source building), 21-1 Changjiang Road, New District, Jiangsu, Wuxi, China 610 Patentee before: Wuxi Vimicro Co., Ltd. |