JP6169250B2 - 電力用半導体装置 - Google Patents
電力用半導体装置 Download PDFInfo
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- JP6169250B2 JP6169250B2 JP2016506087A JP2016506087A JP6169250B2 JP 6169250 B2 JP6169250 B2 JP 6169250B2 JP 2016506087 A JP2016506087 A JP 2016506087A JP 2016506087 A JP2016506087 A JP 2016506087A JP 6169250 B2 JP6169250 B2 JP 6169250B2
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Description
図1は、本発明の実施の形態1による電力用半導体装置の実装状態を示す斜視図である。図2は、本発明の電力用半導体装置を適用する電力変換装置の一例としてのインバータを示す回路図である。ここでは半導体素子としてMOSFETを使用しているとする。図2において、電力変換装置11は上アームの半導体素子12a、12b、12cおよび下アームの半導体素子13a、13b、13cを備えており、上アームの半導体素子12aと下アームの半導体素子13aを直列接続した第一のセミブリッジ回路、上アームの半導体素子12bと下アームの半導体素子13bを直列接続した第二のセミブリッジ回路、上アームの半導体素子12cと下アームの半導体素子13cを直列接続した第三のセミブリッジ回路を並列接続した構成となっている。上アームの半導体素子12a〜12cにはそれぞれ並列に上アームのダイオード17a〜17cが接続されており、下アームの半導体素子13a〜13cにはそれぞれ並列に下アームのダイオード18a〜18cが接続されている。上アームの半導体素子のドレイン側は直流電源14および平滑用コンデンサ15の正極側(図2中Pで示す)に接続され、下アームの半導体素子のソース側は直流電源14および平滑用コンデンサ15の負極側(図2中Mで示す)に接続される。また、上アームの半導体素子と下アームの半導体素子の接続部(図2中Cで示す。中間側とも称する)はモータ16に接続される。
図7は、本発明の実施の形態2による電力用半導体装置の構成を示す側面断面図である。調整用電極6は図7に示すように封止樹脂25の中に設けてもよい。この構成は、負極側端子3の上まで封止樹脂25を充填した後、負極側のみに調整用電極6を設置し、再度、封止樹脂25を半導体モジュール1の中に充填することで、製造が可能である。図7では、調整用電極6は、半導体モジュール1の負極側端子3が伸びる方向と平行な側面で、かつ、負極側端子3に近い側の側面に沿わせてヒートシンク5と接続されているが、調整用電極6は負極側端子が設けられた側面に沿わせて、あるいは中間側端子4が設けられた側面に沿わせてヒートシンク5と接続するように設けても良い。調整用電極6は、ヒートシンク5と接続し、負極側端子3と対向する面を有するように設ければ良い。調整用電極6とヒートシンク5の接続方法として、はんだを用いて接続してもよいが、ねじによる締結や圧着等によりはんだを用いずに接続してもよい。調整用電極6と負極側端子3で形成されるコンデンサの浮遊容量32は正極側表面電極8とヒートシンク5間に生じる正極側浮遊容量30との差異が±10%以内(一般的なコンデンサの静電容量の誤差)となるように設ける。
図9は、本発明の実施の形態3による電力用半導体装置の構成を示す側面断面図である。図9に示すように調整用電極6と負極側端子3の間に、封止樹脂25と異なる誘電率を持つ誘電体22を充填してもよい。例えば誘電体22として高誘電率系のチタン酸バリウムや低誘電率系のアルミナ、酸化チタンやジルコン酸カルシウムなどの材料を用いてもよい。この構成は、負極側端子3の上まで封止樹脂25を充填した後、別途形成した誘電体22を負極側のみに設置し、再度、封止樹脂25を半導体モジュール1の中に充填することで、製造が可能である。調整用電極6をヒートシンク5に接続する方向は、実施の形態1や実施の形態2で説明したいずれの方向でもよい。本実施の形態3においても、調整用電極6とヒートシンク5の接続方法として、はんだを用いて接続してもよいが、ねじによる締結や圧着等によりはんだを用いずに接続してもよい。調整用電極6と負極側端子3で形成されるコンデンサの浮遊容量32は正極側表面電極8とヒートシンク5間に生じる正極側浮遊容量30との差異が±10%以内(一般的なコンデンサの静電容量の誤差)となるように設ける。
図10は、本発明の実施の形態4による電力用半導体装置の構成を示す側面断面図である。図10のように調整用電極6と負極側端子3の間に、いわゆる積層コンデンサのような積層構造23を形成して、調整用電極6および積層構造23、負極側端子3によって浮遊容量を形成してもよい。この構成は、負極側端子3の上まで封止樹脂25を充填した後、別途形成した積層構造23を負極側のみに設置し、再度、封止樹脂25を半導体モジュール1の中に充填することで、製造が可能である。調整用電極6をヒートシンク5に接続する方向は、実施の形態1や実施の形態2で説明したいずれの方向でもよい。また、調整用電極6とヒートシンク5の接続方法として、はんだを用いて接続してもよいが、ねじによる締結や圧着等によりはんだを用いずに接続してもよい。調整用電極6と負極側端子3で形成されるコンデンサの浮遊容量32は正極側表面電極8とヒートシンク5間に生じる正極側浮遊容量30との差異が±10%以内(一般的なコンデンサの静電容量の誤差)となるように設ける。
以上の実施の形態1〜4では、符号12の半導体素子が上アームの半導体素子、符号13の半導体素子が下アームの半導体素子として説明した。本発明は、逆の構成にも適用可能である。すなわち図11の等価回路図に示すように、符号12の半導体素子が下アームの半導体素子、符号13が上アームの半導体素子であってもよい。この場合、実施の形態1〜4で説明した正、負が全て逆になる。実施の形態1〜4の説明において、正を第一、負を第二と置き換え、第一が負、第二が正と読み替えれば、符号12の半導体素子が下アームの半導体素子、符号13が上アームの半導体素子の場合の説明となる。
Claims (3)
- 片面に第一極側表面電極と中間側表面電極が形成された絶縁基板と、
前記第一極側表面電極に第一極側の主極が接合された第一極側半導体素子と中間側表面電極に第一極側の主極が接合された第二極側半導体素子と、
前記中間側表面電極と前記第一極側半導体素子の第二極側の主極を接続する中間側導体と、
前記絶縁基板の前記第一極側表面電極が形成された面とは反対側の面に接合されたヒートシンクと、
前記第一極側半導体素子、前記第二極側半導体素子、前記絶縁基板、および前記中間側導体を封止する封止樹脂と、
前記第二極側半導体素子の第二極側の主極に接続され前記封止樹脂の外側に延在する板状の第二極側端子を備えた電力用半導体装置において、
前記ヒートシンクに接続され、前記封止樹脂、または積層コンデンサを介して前記第二極側端子と対向配置された調整用電極を設けたことを特徴とする電力用半導体装置。 - 前記第一極側表面電極と前記ヒートシンクとの間の浮遊容量の値と、前記調整用電極と前記第二極側端子との間の浮遊容量の値との差が10%以内となるように前記調整用電極を設けたことを特徴とする請求項1に記載の電力用半導体装置。
- 前記調整用電極の少なくとも一部が前記封止樹脂で覆われたことを特徴とする請求項1または2に記載の電力用半導体装置。
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