CN105934824B - 电力用半导体装置 - Google Patents

电力用半导体装置 Download PDF

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CN105934824B
CN105934824B CN201480073620.6A CN201480073620A CN105934824B CN 105934824 B CN105934824 B CN 105934824B CN 201480073620 A CN201480073620 A CN 201480073620A CN 105934824 B CN105934824 B CN 105934824B
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pole
semiconductor element
electrode
pole side
radiator
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CN105934824A (zh
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神藏护
高桥庆多
春名延是
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Mitsubishi Electric Corp
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Abstract

一种电力用半导体装置，具备：第一极侧半导体元件，第一极侧的主极接合于绝缘基板的第一极侧表面电极；第二极侧半导体元件，第一极侧的主极接合于绝缘基板的中间侧表面电极；中间侧导体，连接中间侧表面电极和第一极侧半导体元件的第二极侧的主极；散热器，与绝缘基板接合；密封树脂，密封第一极侧半导体元件、第二极侧半导体元件、绝缘基板以及中间侧导体；以及板状的第二极侧端子，与第二极侧半导体元件的第二极侧的主极连接，延伸到密封树脂的外侧，在所述电力用半导体装置中，设置调整用电极，该调整用电极被设置成与散热器连接并具有与第二极侧端子对置的面。

Description

电力用半导体装置
技术领域
本发明涉及在将电力从直流变换为交流或者从交流变换为直流的电力变换装置中使用的电力用半导体装置。
背景技术
在使用半导体元件的电力用半导体装置中，半导体元件的单面与形成于薄的绝缘体的表面的导电体的薄板即表面电极接合并使薄的绝缘体与金属的散热器接触从而确保半导体元件的冷却路径的情况有很多。另外，在半导体元件的制造过程上，一般而言，在IGBT的情况下，集电极侧与表面电极接合，在MOSFET的情况下，漏极侧与表面电极接合，在二极管的情况下，阴极侧与表面电极接合。因此在作为电力用半导体装置而构成有将上支路的半导体元件与下支路的半导体元件串联连接而成的半桥电路的情况下，半桥电路的正极侧与表面电极接合，所以在正极侧与散热器之间产生大的杂散(stray)电容。另一方面，半桥电路的负极侧不与表面电极接合，处于从散热器离开的位置，所以相比于正极侧与散热器之间的杂散电容，在负极侧与散热器之间产生的杂散电容是微小的。因此，半导体元件与散热器之间的杂散电容在正极侧和负极侧不平衡，噪声增加，常常成为无用辐射的原因。
针对这样的课题，例如在专利文献1中，设为将半导体元件的两侧用散热器覆盖的构造，隔着绝缘基板，利用正极侧以及负极侧的电路的金属图案和散热器形成电容器，从而实现杂散电容的平衡化，抑制噪声。
另外，还存在如下方法(例如专利文献2)：通过在从正极侧端子以及负极侧端子延伸的布线板之间设置与散热器电连接的电极，从而在正极侧端子以及负极侧端子与电连接于散热器的电极之间形成电容器，由此实现杂散电容的平衡化，抑制噪声。
专利文献1：日本特开2013－150488号公报
专利文献2：日本特开2010－251750号公报
发明内容
在专利文献1的电力用半导体装置中，必须使用利用正极侧以及负极侧的金属图案和半导体元件的两侧散热器来对半导体元件进行两面冷却的散热器，无法应用于单面冷却的散热器。
另外，在专利文献2的电力用半导体装置中，使用半导体元件和从正极侧端子、负极侧端子延伸的布线板，所以布线板的距离在构造上变长，产生寄生电感，所以难以作为电容器而作用，难以降低噪声。
本发明是为了解决如上所述的问题点而完成的，其目的在于得到如下电力用半导体装置：对使用单面冷却的散热器的电力用半导体装置也能够应用，且能够利用简单的结构来尽量降低寄生电感，能够有效地抑制噪声。
本发明提供电力用半导体装置，具备：绝缘基板，在单面形成有第一极侧表面电极和中间侧表面电极；第一极侧半导体元件和第二极侧半导体元件，所述第一极侧半导体元件的第一极侧的主极与所述第一极侧表面电极接合，所述第二极侧半导体元件的第一极侧的主极与中间侧表面电极接合；中间侧导体，连接中间侧表面电极和第一极侧半导体元件的第二极侧的主极；散热器，接合于绝缘基板的与形成有第一极侧表面电极的面相反的一侧的面；密封树脂，密封第一极侧半导体元件、第二极侧半导体元件、绝缘基板以及中间侧导体；以及板状的第二极侧端子，与第二极侧半导体元件的第二极侧的主极连接，延伸到密封树脂的外侧，在所述电力用半导体装置中，设置调整用电极，该调整用电极被设置成与散热器连接并具有与第二极侧端子对置的面。
根据本发明，能够得到如下电力用半导体装置：能够利用简单的结构尽量降低寄生电感，能够有效地抑制噪声。
附图说明
图1是示出本发明的实施方式1的电力用半导体装置的安装状态的立体图。
图2是示出应用本发明的电力用半导体装置的电力变换装置的一个例子的电路图。
图3是示出本发明的实施方式1的电力用半导体装置的主要部分的结构的俯视图。
图4是示出本发明的实施方式1的电力用半导体装置的结构的侧面剖面图。
图5是用于说明本发明的实施方式1的电力用半导体装置的作用的等效电路图。
图6是示出本发明的实施方式1的电力用半导体装置的其它结构的安装状态的立体图。
图7是示出本发明的实施方式2的电力用半导体装置的结构的侧面剖面图。
图8是示出本发明的实施方式2的电力用半导体装置的其它结构的侧面剖面图。
图9是示出本发明的实施方式3的电力用半导体装置的结构的侧面剖面图。
图10是示出本发明的实施方式4的电力用半导体装置的结构的侧面剖面图。
图11是用于说明本发明的实施方式5的电力用半导体装置的作用的等效电路图。
符号说明
1：半导体模块；2：正极侧端子(第一极侧端子)；3：负极侧端子(第二极侧端子)；4：中间侧端子；5：散热器；6：调整用电极；8：正极侧表面电极(第一极侧表面电极)；9：中间侧表面电极；10：绝缘基板；11：电力变换装置；12、12a～12c：上支路的半导体元件(正极侧半导体元件、第一极侧半导体元件)；13、13a～13c：下支路的半导体元件(负极侧半导体元件、第二极侧半导体元件)；14：直流电源；15：平滑用电容器；17、17a～17c：上支路的二极管；18、18a～18c：下支路的二极管；20：中间侧导体；22：电介质；23：层叠构造；25：密封树脂；30：正极侧杂散电容(第一极侧杂散电容)；31：中间侧杂散电容；32：调整用杂散电容。
具体实施方式
实施方式1.
图1是示出本发明的实施方式1的电力用半导体装置的安装状态的立体图。图2是示出作为应用本发明的电力用半导体装置的电力变换装置的一个例子的逆变器的电路图。此处，设为使用MOSFET作为半导体元件。在图2中，电力变换装置11具备上支路的半导体元件12a、12b、12c以及下支路的半导体元件13a、13b、13c，且是并联连接第一半桥电路、第二半桥电路以及第三半桥电路的构造，所述第一半桥电路是串联连接上支路的半导体元件12a和下支路的半导体元件13a而成的，所述第二半桥电路是串联连接上支路的半导体元件12b和下支路的半导体元件13b而成的，所述第三半桥电路是串联连接上支路的半导体元件12c和下支路的半导体元件13c而成的。对上支路的半导体元件12a～12c分别并联地连接有上支路的二极管17a～17c，对下支路的半导体元件13a～13c分别并联地连接有下支路的二极管18a～18c。上支路的半导体元件的漏极侧与直流电源14以及平滑用电容器15的正极侧(在图2中用P表示)连接，下支路的半导体元件的源极侧与直流电源14以及平滑用电容器15的负极侧(在图2中用M表示)连接。另外，上支路的半导体元件与下支路的半导体元件的连接部(在图2中用C表示。还称为中间侧)与马达16连接。
此处，示出了并联连接3个半桥电路的电路结构，但不论半桥电路的并联连接数量如何，都能够应用本发明。另外，此处，作为半导体元件而示出了MOSFET的例子，但在使用IGBT、晶闸管等除了MOSFET以外的半导体元件的情况下也能够应用。另外，此处，作为电力变换装置而以逆变器为例进行了举出，但对具有半桥电路的DCDC转换器电路、桥连接二极管的整流电路也能够应用本发明。另外，在本申请中，将MOSFET的漏极、IGBT的集电极等连接于电压高的一侧的极称为正侧的主极，将MOSFET的源极、IGBT的发射极等连接于电压低的一侧的极称为负侧的主极。
电力变换装置11的各半桥电路包括具备多个半导体的半导体模块。图1所示的本发明的实施方式1的电力用半导体装置是串联连接图2中的1个相的量的上支路的半导体元件和下支路的半导体元件而成的构造。在散热器5之上安装有半导体模块1，半导体模块1具备正极侧端子2、负极侧端子3、中间侧端子4，各端子从模块内被引出到模块外。另外，在电连接于散热器5的调整用电极6与板状的负极侧端子3之间形成有电容器。
图3是示出本发明的实施方式1的电力用半导体装置的主要部分的内部结构的俯视图。在图3中，以除掉后述密封树脂25以及中间侧导体20的状态仅示出下支路的半导体元件13的部分。在图3以后，将上支路的半导体元件记载为正极侧半导体元件12，将下支路的半导体元件记载为负极侧半导体元件13。图4是示出包含图1的A－A线的面的剖面的侧面剖面图。图5是本发明的电力用半导体装置中的半桥电路的结构中的等效电路图。如图4所示，正极侧半导体元件12的正侧的主极接合于正极侧表面电极8之上，负极侧半导体元件13的正侧的主极接合于中间侧表面电极9之上。正极侧端子2(在图4中未出现)与正极侧表面电极8连接，负极侧端子3与负极侧半导体元件13的负侧的主极连接，中间侧导体20连接中间侧表面电极9与正极侧半导体元件12的负侧的主极之间。中间侧端子4与中间侧导体20电连接。正极侧表面电极8以及中间侧表面电极9形成于绝缘基板10的单面，经由绝缘基板10而与散热器5接触。这样，在电力用半导体的情况下，为了确保冷却路径，经由薄的绝缘基板而使表面电极与散热器接触是普遍的。另外，在半导体元件的制造过程上，在MOSFET的情况下，如漏极侧(在IGBT的情况下是集电极侧，在二极管的情况下是阴极侧)那样正侧的主极与表面电极接合是普遍的，所以通常负极侧的表面电极未形成于绝缘基板10的表面。关于半导体模块1，将与表面电极接合的半导体元件、绝缘基板、中间侧导体等用密封树脂25密封而构成模块。
在该结构中，在负极侧端子3与电连接于散热器5的调整用电极6之间形成杂散电容。作为调整用电极6与散热器5的连接方法，可以使用焊料进行连接，但也可以不使用焊料而通过利用螺钉的紧固、压焊等进行连接。图5的等效电路图所示的电容器32表示通过调整用电极6和负极侧端子3形成的杂散电容32(称为调整用杂散电容)。另外，电容器30表示在正极侧表面电极8与散热器5之间产生的杂散电容30(正极侧杂散电容)。进而，电容器31表示主要通过负极侧半导体元件13的正侧的主极所连接的中间侧表面电极9和散热器5形成的杂散电容31(中间侧杂散电容)。此处，以使电容器32的电容即通过调整用电极6和负极侧端子3形成的调整用杂散电容32与电容器30的电容即在正极侧表面电极8与散热器5之间产生的杂散电容30的差异成为例如一般的电容器的静电电容的误差即±10％以内的方式设置调整用电极6。
在图1以及图4所示的结构中，调整用电极6具有以在与负极侧端子3之间形成杂散电容的方式与板状的负极侧端子3对置的面，设置成沿着半导体模块1的与负极侧端子3延伸的方向平行且与负极侧端子3近的一侧的侧面而与散热器5连接。调整用电极6不限于此，如图6所示，也可以设置成从与设置有负极侧端子3的侧面相反的一侧的侧面伸展，具有与负极侧端子3对置的面。进而，调整用电极6也可以设置成从设置有负极侧端子3的侧面伸展，具有与负极侧端子3对置的面。通过以与散热器5电连接并具有与负极侧端子3对置的面的方式设置调整用电极6，从而在调整用电极6与负极侧端子3之间形成杂散电容，所以不论其宽度、厚度如何，都能够得到本发明的效果。但是，优选将调整用电极6的宽度设为与负极侧端子3的宽度相同或者在其以上。通过将调整用电极6的宽度设为这样，从而能够以低电感连接负极侧端子3与散热器5之间，能够提高本发明的效果。
在本实施方式1中，在如图2所示的电力变换装置11中，半桥电路包括如图1所示的半导体模块1，设置如图3、图4、图6所示的调整用电极6，在负极侧端子3与调整用电极6之间形成作为调整用杂散电容32的电容器。以使正极侧表面电极8和散热器5之间的正极侧杂散电容30与调整用杂散电容32的电容之差优选为±10％以内的方式设置调整用电极6。由此，在基于单面冷却的散热器的结构中，也能够使杂散电容在正极侧和负极侧平衡化，杂散电容作为噪声去除用的静电电容分量发挥作用，从而发挥辐射噪声降低效果。另外，由于未使用从负极侧端子延伸的布线板，所以与如专利文献2所记载那样的电力用半导体装置相比是寄生电感被降低的构造。这样，能够不使用调整用电极以外的追加构件来使杂散电容在正极侧和负极侧平衡化，使杂散电容作为噪声去除用的静电电容分量发挥作用，从而发挥辐射噪声降低效果。
实施方式2.
图7是示出本发明的实施方式2的电力用半导体装置的结构的侧面剖面图。调整用电极6也可以如图7所示设置在密封树脂25之中。该结构能够通过如下方式进行制造：在将密封树脂25填充至负极侧端子3上方之后，仅在负极侧设置调整用电极6，再次将密封树脂25填充到半导体模块1之中。在图7中，调整用电极6沿着半导体模块1的与负极侧端子3延伸的方向平行且与负极侧端子3近的一侧的侧面而与散热器5连接，但调整用电极6也可以设置成沿着设置有负极侧端子的侧面或者沿着设置有中间侧端子4的侧面而与散热器5连接。调整用电极6也可以设置成与散热器5连接并具有与负极侧端子3对置的面。作为调整用电极6与散热器5的连接方法，可以使用焊料进行连接，但也可以不使用焊料，而通过利用螺钉的紧固、压焊等进行连接。通过调整用电极6和负极侧端子3形成的电容器的杂散电容32以与在正极侧表面电极8与散热器5之间产生的正极侧杂散电容30的差异为±10％以内(一般的电容器的静电电容的误差)的方式被设置。
图8是示出本发明的实施方式2的电力用半导体装置的其它结构的侧面剖面图。如图8所示，也可以将调整用电极6整体用密封树脂25覆盖。根据本实施方式2的电力用半导体装置的结构，与将如实施方式1那样的调整用电极6设置在半导体模块1的外部的情况相比，能够使调整用电极6与负极侧端子3的距离变近，所以能够使用更小的面积的调整用电极6来使杂散电容在正极侧和负极侧平衡化，能够通过使杂散电容作为噪声去除用的静电电容分量发挥作用，从而发挥辐射噪声降低效果。
实施方式3.
图9是示出本发明的实施方式3的电力用半导体装置的结构的侧面剖面图。如图9所示，也可以在调整用电极6与负极侧端子3之间填充具有与密封树脂25不同的介电常数的电介质22。例如作为电介质22，也可以使用高介电常数系的钛酸钡、低介电常数系的氧化铝、氧化钛、锆酸钙等材料。该结构能够通过如下方式进行制造：将密封树脂25填充至负极侧端子3上方之后，仅在负极侧设置另外形成的电介质22，再次将密封树脂25填充到半导体模块1之中。将调整用电极6与散热器5连接的方向可以是在实施方式1、实施方式2中说明的任意的方向。在本实施方式3中，作为调整用电极6与散热器5的连接方法，可以使用焊料进行连接，但也可以不使用焊料，而通过利用螺钉的紧固、压焊等进行连接。通过调整用电极6和负极侧端子3形成的电容器的杂散电容32以与在正极侧表面电极8和散热器5之间产生的正极侧杂散电容30的差异为±10％以内(一般的电容器的静电电容的误差)的方式被设置。
根据该结构，通过提高电介质22的介电常数，从而相比于调整用电极6与负极侧端子3之间仅为密封树脂25的情况，使杂散电容在正极侧和负极侧平衡化所需的调整用电极6的面积小也可以，能够通过更小的调整用电极6发挥辐射噪声降低效果。
实施方式4.
图10是示出本发明的实施方式4的电力用半导体装置的结构的侧面剖面图。如图10那样也可以在调整用电极6与负极侧端子3之间形成如所谓的层叠电容器那样的层叠构造23，通过调整用电极6以及层叠构造23、负极侧端子3而形成杂散电容。该结构能够通过如下方式进行制造：将密封树脂25填充至负极侧端子3上方之后，仅在负极侧设置另外形成的层叠构造23，再次将密封树脂25填充到半导体模块1之中。将调整用电极6与散热器5连接的方向可以是在实施方式1、实施方式2中说明的任意的方向。另外，作为调整用电极6与散热器5的连接方法，可以使用焊料进行连接，但也可以不使用焊料，而通过利用螺钉的紧固、压焊等进行连接。通过调整用电极6和负极侧端子3形成的电容器的杂散电容32以与在正极侧表面电极8和散热器5之间产生的正极侧杂散电容30的差异为±10％以内(一般的电容器的静电电容的误差)的方式被设置。
根据该结构，通过设置层叠构造23，从而相比于调整用电极6与负极侧端子3之间仅为密封树脂25的情况，使杂散电容在正极侧和负极侧平衡化所需的调整用电极6的面积小也可以，能够通过更小的调整用电极6发挥辐射噪声降低效果。
实施方式5.
在以上的实施方式1～4中，将符号12的半导体元件作为上支路的半导体元件、将符号13的半导体元件作为下支路的半导体元件而进行了说明。本发明也能够应用于相反的结构。即也可以如图11的等效电路图所示，符号12的半导体元件为下支路的半导体元件，符号13为上支路的半导体元件。在该情况下，在实施方式1～4中说明的正、负全部相反。在实施方式1～4的说明中，如果将正置换为第一，将负置换为第二，将第一读为负，将第二读为正，则是符号12的半导体元件为下支路的半导体元件、符号13为上支路的半导体元件的情况下的说明。
即，在图1、图3、图4以及图6～10中的任意的图中，将各个部件表现为第一极侧端子2、第二极侧端子3、第一极侧表面电极8、第一极侧半导体元件12、第二极侧半导体元件13。在第一极为正、第二极为负的情况下成为实施方式1～4的说明。与此相反地，在第一极为负、第二极为正的情况下，是负极侧半导体元件12、正极侧半导体元件13、正极侧端子3。该情况下的电力用半导体装置的等效电路成为如图11那样，被串联地连接的半导体元件12和半导体元件13的符号与图5的等效电路相反。在该结构中，对在调整用电极6和正极侧端子3之间形成的调整用杂散电容即图11中的电容器32的电容与负极侧表面电极8和散热器5之间的杂散电容(负极侧杂散电容。第一极侧杂散电容)即图11中的电容器30的电容进行平衡化。这样，本发明在半导体模块1的正、负为任意的情况下都能够应用。
另外，本发明在其发明的范围内能够自由地组合各实施方式或者对各实施方式适当地进行变形或者省略其结构要件。

Claims (3)

1.一种电力用半导体装置，具备：
绝缘基板，在单面形成有第一极侧表面电极和中间侧表面电极；
第一极侧半导体元件和第二极侧半导体元件，所述第一极侧半导体元件的第一极侧的主极与所述第一极侧表面电极接合，所述第二极侧半导体元件的第一极侧的主极与中间侧表面电极接合；
中间侧导体，连接所述中间侧表面电极和所述第一极侧半导体元件的第二极侧的主极；
散热器，接合于所述绝缘基板的与形成有所述第一极侧表面电极的面相反的一侧的面；
密封树脂，密封所述第一极侧半导体元件、所述第二极侧半导体元件、所述绝缘基板以及所述中间侧导体；以及
板状的第二极侧端子，与所述第二极侧半导体元件的第二极侧的主极连接，延伸到所述密封树脂的外侧，
所述电力用半导体装置的特征在于，
设置有调整用电极，该调整用电极与所述散热器连接并隔着所述密封树脂或者隔着导体和电介质的层叠构造而与所述第二极侧端子对置配置。
2.根据权利要求1所述的电力用半导体装置，其特征在于，
以使所述第一极侧表面电极和所述散热器之间的杂散电容的值与所述调整用电极和所述第二极侧端子之间的杂散电容的值之差为10％以内的方式设置有所述调整用电极。
3.根据权利要求1或者2所述的电力用半导体装置，其特征在于，
所述调整用电极的至少一部分被所述密封树脂覆盖。
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