JP6160708B2 - 炭化珪素半導体装置 - Google Patents
炭化珪素半導体装置 Download PDFInfo
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- JP6160708B2 JP6160708B2 JP2015549075A JP2015549075A JP6160708B2 JP 6160708 B2 JP6160708 B2 JP 6160708B2 JP 2015549075 A JP2015549075 A JP 2015549075A JP 2015549075 A JP2015549075 A JP 2015549075A JP 6160708 B2 JP6160708 B2 JP 6160708B2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 95
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 93
- 239000004065 semiconductor Substances 0.000 title claims description 77
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 232
- 229910052759 nickel Inorganic materials 0.000 claims description 112
- 229910021334 nickel silicide Inorganic materials 0.000 claims description 58
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims description 58
- 229910052751 metal Inorganic materials 0.000 claims description 33
- 239000002184 metal Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 29
- 239000010936 titanium Substances 0.000 claims description 26
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 25
- 229910052719 titanium Inorganic materials 0.000 claims description 24
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 7
- 238000010030 laminating Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 220
- 235000012431 wafers Nutrition 0.000 description 37
- 230000035882 stress Effects 0.000 description 34
- 238000000151 deposition Methods 0.000 description 25
- 230000008021 deposition Effects 0.000 description 25
- 238000000034 method Methods 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000010931 gold Substances 0.000 description 9
- 239000012535 impurity Substances 0.000 description 8
- 238000000926 separation method Methods 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 239000002244 precipitate Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 241001050985 Disco Species 0.000 description 1
- 229910005881 NiSi 2 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000004736 wide-angle X-ray diffraction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
Description
実施の形態にかかる炭化珪素半導体装置の構造について説明する。実施の形態にかかる炭化珪素半導体装置は、炭化珪素(SiC)からなる半導体基板(以下、SiC基板とする)とのコンタクト(電気的接触部)がオーミックコンタクトとなる裏面電極を備える。裏面電極は、SiC基板上にニッケルシリサイド層(SiC基板とのオーミックコンタクトを形成する金属層)および裏面電極積層体(金属電極積層体)が順に積層されてなる。裏面電極積層体は、ニッケルシリサイド層側から例えばチタン(Ti)層、ニッケル(Ni)層および金(Au)層が順に積層されてなる。SiC基板の内部には、素子構造に応じた半導体領域が設けられている。炭化珪素半導体装置の素子構造(おもて面電極やSiC基板の内部の半導体領域など)は、設計条件に応じて種々変更可能であるため、説明を省略する。
2 ニッケルシリサイド層となるチタン層
3 ニッケルシリサイド層となるニッケル層
4 ニッケルシリサイド層
5 裏面電極積層体を構成するチタン層
6 裏面電極積層体を構成するニッケル層
7 裏面電極積層体を構成する金層
8 裏面電極積層体
11 イオン注入
12 逆スパッタ
Claims (2)
- 炭化珪素からなる半導体基板上に設けられ、前記半導体基板とのオーミックコンタクトを形成するチタンカーバイドを含むニッケルシリサイド層である金属層と、
前記金属層上に少なくともチタン層およびニッケル層を順に積層してなる裏面金属電極積層体と、
を備えた縦型の炭化珪素半導体装置であって、
前記ニッケル層の残留応力は、200MPa以下であり、
前記ニッケル層の厚さは、400nm以上1200nm以下であることを特徴とする炭化珪素半導体装置。 - 前記ニッケル層の残留応力は、100MPa以下であり、前記ニッケル層の厚さは、400nm以上700nm以下であることを特徴とする請求項1に記載の炭化珪素半導体装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013242368 | 2013-11-22 | ||
JP2013242368 | 2013-11-22 | ||
PCT/JP2014/079630 WO2015076128A1 (ja) | 2013-11-22 | 2014-11-07 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
Related Child Applications (1)
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JP2017077595A Division JP6390745B2 (ja) | 2013-11-22 | 2017-04-10 | 炭化珪素半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2015076128A1 JPWO2015076128A1 (ja) | 2017-03-16 |
JP6160708B2 true JP6160708B2 (ja) | 2017-07-12 |
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Application Number | Title | Priority Date | Filing Date |
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JP2015549075A Active JP6160708B2 (ja) | 2013-11-22 | 2014-11-07 | 炭化珪素半導体装置 |
JP2017077595A Active JP6390745B2 (ja) | 2013-11-22 | 2017-04-10 | 炭化珪素半導体装置の製造方法 |
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JP2017077595A Active JP6390745B2 (ja) | 2013-11-22 | 2017-04-10 | 炭化珪素半導体装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10374050B2 (ja) |
EP (1) | EP2993690A4 (ja) |
JP (2) | JP6160708B2 (ja) |
CN (1) | CN105308722B (ja) |
WO (1) | WO2015076128A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016015424A (ja) * | 2014-07-02 | 2016-01-28 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP6808952B2 (ja) * | 2016-03-16 | 2021-01-06 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
DE102016125030A1 (de) | 2016-12-20 | 2018-06-21 | Infineon Technologies Ag | Ausbilden einer Metallkontaktschicht auf Siliziumcarbid und Halbleitervorrichtung mit einer Metallkontaktstruktur |
KR20180124459A (ko) * | 2017-05-12 | 2018-11-21 | 한국전기연구원 | 반도체와 금속 사이에 형성되는 오믹접촉 및 오믹접촉 형성방법 |
CN109994376B (zh) * | 2017-12-30 | 2021-10-15 | 无锡华润微电子有限公司 | 碳化硅衬底上形成的欧姆接触结构及其形成方法 |
CN108693700B (zh) * | 2018-05-17 | 2021-04-09 | 京东方科技集团股份有限公司 | 一种压印模板及其制备方法 |
US10629686B2 (en) * | 2018-08-02 | 2020-04-21 | Semiconductor Components Industries, Llc | Carbon-controlled ohmic contact layer for backside ohmic contact on a silicon carbide power semiconductor device |
JP7283053B2 (ja) * | 2018-11-09 | 2023-05-30 | 富士電機株式会社 | 炭化珪素半導体装置、炭化珪素半導体組立体および炭化珪素半導体装置の製造方法 |
IT202100027101A1 (it) * | 2021-10-21 | 2023-04-21 | St Microelectronics Srl | Procedimento di fabbricazione di un dispositivo elettronico di carburo di silicio e dispositivo elettronico di carburo di silicio |
Family Cites Families (20)
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JPH05279845A (ja) * | 1992-04-02 | 1993-10-26 | Hitachi Ltd | スパッタリング方法及びその装置 |
US7297626B1 (en) * | 2001-08-27 | 2007-11-20 | United States Of America As Represented By The Secretary Of The Army | Process for nickel silicide Ohmic contacts to n-SiC |
JP3871607B2 (ja) | 2001-12-14 | 2007-01-24 | 松下電器産業株式会社 | 半導体素子およびその製造方法 |
JP3767585B2 (ja) * | 2003-07-11 | 2006-04-19 | 株式会社デンソー | 半導体装置 |
JP4699720B2 (ja) * | 2004-08-05 | 2011-06-15 | リンテック株式会社 | 貼付装置及び貼付方法 |
JP4699812B2 (ja) * | 2005-06-07 | 2011-06-15 | 株式会社デンソー | 半導体装置およびその製造方法 |
JP2007184571A (ja) | 2005-12-08 | 2007-07-19 | Nissan Motor Co Ltd | 炭化珪素半導体装置、炭化珪素半導体装置の製造方法、炭化珪素半導体装置中の遷移金属シリサイドと金属膜との接合体及び炭化珪素半導体装置中の遷移金属シリサイドと金属膜との接合体の製造方法 |
US20070138482A1 (en) | 2005-12-08 | 2007-06-21 | Nissan Motor Co., Ltd. | Silicon carbide semiconductor device and method for producing the same |
JP2008053291A (ja) | 2006-08-22 | 2008-03-06 | Rohm Co Ltd | SiC半導体素子およびその製造方法 |
JP5352954B2 (ja) * | 2006-11-22 | 2013-11-27 | 日産自動車株式会社 | 電極膜/炭化珪素構造体 |
JP2008227405A (ja) * | 2007-03-15 | 2008-09-25 | Toyota Motor Corp | n型4H−SiC基板上にオーミック電極を形成する方法 |
JP4873321B2 (ja) * | 2007-08-17 | 2012-02-08 | 株式会社アルバック | はんだバンプの形成方法 |
US7790616B2 (en) * | 2007-08-29 | 2010-09-07 | Northrop Grumman Systems Corporation | Encapsulated silicidation for improved SiC processing and device yield |
JP5369581B2 (ja) | 2008-09-29 | 2013-12-18 | 住友電気工業株式会社 | 半導体デバイス用裏面電極、半導体デバイスおよび半導体デバイス用裏面電極の製造方法 |
JP5448652B2 (ja) * | 2009-09-01 | 2014-03-19 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
CA2769697A1 (en) * | 2010-04-14 | 2011-10-20 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device and method for manufacturing same |
JP6060476B2 (ja) * | 2011-04-06 | 2017-01-18 | 富士電機株式会社 | 電極形成方法 |
JP6099298B2 (ja) * | 2011-05-30 | 2017-03-22 | 富士電機株式会社 | SiC半導体デバイス及びその製造方法 |
JP6261155B2 (ja) * | 2012-02-20 | 2018-01-17 | 富士電機株式会社 | SiC半導体デバイスの製造方法 |
JP6112699B2 (ja) * | 2012-03-30 | 2017-04-12 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法及び該方法により製造された炭化珪素半導体装置 |
-
2014
- 2014-11-07 WO PCT/JP2014/079630 patent/WO2015076128A1/ja active Application Filing
- 2014-11-07 EP EP14864285.3A patent/EP2993690A4/en not_active Withdrawn
- 2014-11-07 CN CN201480028190.6A patent/CN105308722B/zh active Active
- 2014-11-07 JP JP2015549075A patent/JP6160708B2/ja active Active
-
2015
- 2015-12-04 US US14/960,293 patent/US10374050B2/en active Active
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2017
- 2017-04-10 JP JP2017077595A patent/JP6390745B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
CN105308722A (zh) | 2016-02-03 |
CN105308722B (zh) | 2017-12-19 |
JP6390745B2 (ja) | 2018-09-19 |
US10374050B2 (en) | 2019-08-06 |
EP2993690A1 (en) | 2016-03-09 |
JPWO2015076128A1 (ja) | 2017-03-16 |
US20160087061A1 (en) | 2016-03-24 |
JP2017120938A (ja) | 2017-07-06 |
EP2993690A4 (en) | 2017-01-18 |
WO2015076128A1 (ja) | 2015-05-28 |
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