JP6154729B2 - 圧電体素子の製造方法 - Google Patents

圧電体素子の製造方法 Download PDF

Info

Publication number
JP6154729B2
JP6154729B2 JP2013223376A JP2013223376A JP6154729B2 JP 6154729 B2 JP6154729 B2 JP 6154729B2 JP 2013223376 A JP2013223376 A JP 2013223376A JP 2013223376 A JP2013223376 A JP 2013223376A JP 6154729 B2 JP6154729 B2 JP 6154729B2
Authority
JP
Japan
Prior art keywords
piezoelectric
film
electrode
piezoelectric film
intermediate layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013223376A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015088521A5 (enExample
JP2015088521A (ja
Inventor
藤井　隆満
隆満 藤井
崇幸 直野
崇幸 直野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2013223376A priority Critical patent/JP6154729B2/ja
Priority to PCT/JP2014/077958 priority patent/WO2015064423A1/ja
Publication of JP2015088521A publication Critical patent/JP2015088521A/ja
Priority to US15/137,142 priority patent/US20160240768A1/en
Publication of JP2015088521A5 publication Critical patent/JP2015088521A5/ja
Application granted granted Critical
Publication of JP6154729B2 publication Critical patent/JP6154729B2/ja
Priority to US16/352,770 priority patent/US11165011B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • B06B1/0607—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements
    • B06B1/0611—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements in a pile
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00158—Diaphragms, membranes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H10N30/067—Forming single-layered electrodes of multilayered piezoelectric or electrostrictive parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2041—Beam type
    • H10N30/2042—Cantilevers, i.e. having one fixed end
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2047—Membrane type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H10N30/501—Piezoelectric or electrostrictive devices having a stacked or multilayer structure having a non-rectangular cross-section in a plane parallel to the stacking direction, e.g. polygonal or trapezoidal in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/871—Single-layered electrodes of multilayer piezoelectric or electrostrictive devices, e.g. internal electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877—Conductive materials
    • H10N30/878—Conductive materials the principal material being non-metallic, e.g. oxide or carbon based

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Micromachines (AREA)
  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
  • Apparatuses For Generation Of Mechanical Vibrations (AREA)
JP2013223376A 2013-10-28 2013-10-28 圧電体素子の製造方法 Active JP6154729B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013223376A JP6154729B2 (ja) 2013-10-28 2013-10-28 圧電体素子の製造方法
PCT/JP2014/077958 WO2015064423A1 (ja) 2013-10-28 2014-10-21 圧電体素子及び圧電体素子の製造方法
US15/137,142 US20160240768A1 (en) 2013-10-28 2016-04-25 Piezoelectric element and method for manufacturing piezoelectric element
US16/352,770 US11165011B2 (en) 2013-10-28 2019-03-13 Piezoelectric element and method for manufacturing piezoelectric element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013223376A JP6154729B2 (ja) 2013-10-28 2013-10-28 圧電体素子の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017091823A Division JP6346693B2 (ja) 2017-05-02 2017-05-02 圧電体素子の製造方法

Publications (3)

Publication Number Publication Date
JP2015088521A JP2015088521A (ja) 2015-05-07
JP2015088521A5 JP2015088521A5 (enExample) 2016-04-28
JP6154729B2 true JP6154729B2 (ja) 2017-06-28

Family

ID=53004031

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013223376A Active JP6154729B2 (ja) 2013-10-28 2013-10-28 圧電体素子の製造方法

Country Status (3)

Country Link
US (2) US20160240768A1 (enExample)
JP (1) JP6154729B2 (enExample)
WO (1) WO2015064423A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018527206A (ja) * 2015-09-03 2018-09-20 ゼネラル・エレクトリック・カンパニイ 電気めっきｍｅｍｓ構造の高融点シード金属

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8182501B2 (en) 2004-02-27 2012-05-22 Ethicon Endo-Surgery, Inc. Ultrasonic surgical shears and method for sealing a blood vessel using same
EP3162309B1 (en) 2004-10-08 2022-10-26 Ethicon LLC Ultrasonic surgical instrument
US20070191713A1 (en) 2005-10-14 2007-08-16 Eichmann Stephen E Ultrasonic device for cutting and coagulating
US7621930B2 (en) 2006-01-20 2009-11-24 Ethicon Endo-Surgery, Inc. Ultrasound medical instrument having a medical ultrasonic blade
US8057498B2 (en) 2007-11-30 2011-11-15 Ethicon Endo-Surgery, Inc. Ultrasonic surgical instrument blades
US8911460B2 (en) 2007-03-22 2014-12-16 Ethicon Endo-Surgery, Inc. Ultrasonic surgical instruments
US8523889B2 (en) 2007-07-27 2013-09-03 Ethicon Endo-Surgery, Inc. Ultrasonic end effectors with increased active length
US8808319B2 (en) 2007-07-27 2014-08-19 Ethicon Endo-Surgery, Inc. Surgical instruments
US9044261B2 (en) 2007-07-31 2015-06-02 Ethicon Endo-Surgery, Inc. Temperature controlled ultrasonic surgical instruments
US8512365B2 (en) 2007-07-31 2013-08-20 Ethicon Endo-Surgery, Inc. Surgical instruments
US8430898B2 (en) 2007-07-31 2013-04-30 Ethicon Endo-Surgery, Inc. Ultrasonic surgical instruments
CN101883531B (zh) 2007-10-05 2014-07-02 伊西康内外科公司 人体工程学外科手术器械
US10010339B2 (en) 2007-11-30 2018-07-03 Ethicon Llc Ultrasonic surgical blades
US8334635B2 (en) 2009-06-24 2012-12-18 Ethicon Endo-Surgery, Inc. Transducer arrangements for ultrasonic surgical instruments
US8486096B2 (en) 2010-02-11 2013-07-16 Ethicon Endo-Surgery, Inc. Dual purpose surgical instrument for cutting and coagulating tissue
US8951272B2 (en) 2010-02-11 2015-02-10 Ethicon Endo-Surgery, Inc. Seal arrangements for ultrasonically powered surgical instruments
US9820768B2 (en) 2012-06-29 2017-11-21 Ethicon Llc Ultrasonic surgical instruments with control mechanisms
US10226273B2 (en) 2013-03-14 2019-03-12 Ethicon Llc Mechanical fasteners for use with surgical energy devices
GB2521229A (en) 2013-12-16 2015-06-17 Ethicon Endo Surgery Inc Medical device
EP3140869B1 (en) * 2014-05-09 2019-06-05 Chirp Microsystems, Inc. Micromachined ultrasound transducer using multiple piezoelectric materials
US20160352307A1 (en) * 2015-05-27 2016-12-01 Murata Manufacturing Co., Ltd. Mems resonator with high quality factor
CN106291562A (zh) * 2015-05-30 2017-01-04 鸿富锦精密工业（深圳）有限公司 超声波感测器及其制造方法、超声波感测器阵列
JP6460406B2 (ja) 2015-06-09 2019-01-30 第一精工株式会社 可動反射素子及び二次元走査装置
US11020140B2 (en) 2015-06-17 2021-06-01 Cilag Gmbh International Ultrasonic surgical blade for use with ultrasonic surgical instruments
US10357303B2 (en) 2015-06-30 2019-07-23 Ethicon Llc Translatable outer tube for sealing using shielded lap chole dissector
JP6464049B2 (ja) * 2015-06-30 2019-02-06 富士フイルム株式会社 積層構造体、圧電素子および圧電素子の製造方法
JP6426061B2 (ja) * 2015-07-02 2018-11-21 富士フイルム株式会社 積層薄膜構造体の製造方法、積層薄膜構造体及びそれを備えた圧電素子
JP2017092097A (ja) * 2015-11-04 2017-05-25 セイコーエプソン株式会社 圧電素子、超音波プローブ、超音波測定装置及び圧電素子の製造方法
JP6610883B2 (ja) 2015-12-17 2019-11-27 セイコーエプソン株式会社 超音波センサー用の圧電デバイス
CN107342357B (zh) * 2016-04-28 2022-08-16 新科实业有限公司 薄膜压电元件及其制造方法
US10516943B2 (en) 2016-05-04 2019-12-24 Infineon Technologies Ag Microelectromechanical device, an array of microelectromechanical devices, a method of manufacturing a microelectromechanical device, and a method of operating a microelectromechanical device
US10445547B2 (en) 2016-05-04 2019-10-15 Invensense, Inc. Device mountable packaging of ultrasonic transducers
US10706835B2 (en) 2016-05-10 2020-07-07 Invensense, Inc. Transmit beamforming of a two-dimensional array of ultrasonic transducers
US10245064B2 (en) 2016-07-12 2019-04-02 Ethicon Llc Ultrasonic surgical instrument with piezoelectric central lumen transducer
USD847990S1 (en) 2016-08-16 2019-05-07 Ethicon Llc Surgical instrument
US11350959B2 (en) 2016-08-25 2022-06-07 Cilag Gmbh International Ultrasonic transducer techniques for ultrasonic surgical instrument
US10952759B2 (en) 2016-08-25 2021-03-23 Ethicon Llc Tissue loading of a surgical instrument
JP6788186B2 (ja) * 2016-09-29 2020-11-25 ミツミ電機株式会社 光走査装置及び光走査装置の製造方法
JP2018129402A (ja) * 2017-02-08 2018-08-16 セイコーエプソン株式会社 圧電素子及びその製造方法
CN110603817B (zh) * 2017-05-09 2020-08-25 富士胶片株式会社 压电麦克风芯片及压电麦克风
JP6342040B1 (ja) * 2017-06-09 2018-06-13 株式会社サイオクス 圧電膜を有する積層基板、圧電膜を有する素子および圧電膜を有する積層基板の製造方法
US10910551B2 (en) * 2017-11-06 2021-02-02 Samsung Electronics Co., Ltd. Piezoelectric material, piezoelectric device including the piezoelectric material, and method of manufacturing the piezoelectric material
JP6703320B2 (ja) * 2017-11-22 2020-06-03 株式会社村田製作所 圧電デバイス及び圧電デバイスの製造方法
JP6703321B2 (ja) * 2017-11-22 2020-06-03 株式会社村田製作所 圧電デバイス及び圧電デバイスの製造方法
CN107979353B (zh) * 2018-01-08 2025-08-22 左蓝微(江苏)电子技术有限公司 Rf mems滤波器及其制备方法
US10755067B2 (en) 2018-03-22 2020-08-25 Invensense, Inc. Operating a fingerprint sensor comprised of ultrasonic transducers
JP7421710B2 (ja) * 2019-04-03 2024-01-25 Ｉ－ＰＥＸ Ｐｉｅｚｏ Ｓｏｌｕｔｉｏｎｓ株式会社 膜構造体
US20200367858A1 (en) * 2019-05-20 2020-11-26 Invensense, Inc. Dual layer ultrasonic transducer
US11176345B2 (en) 2019-07-17 2021-11-16 Invensense, Inc. Ultrasonic fingerprint sensor with a contact layer of non-uniform thickness
CN112864304A (zh) * 2019-11-12 2021-05-28 应用材料公司 具有pmnpt层的压电装置的制造
US11995909B2 (en) 2020-07-17 2024-05-28 Tdk Corporation Multipath reflection correction
US12174295B2 (en) 2020-08-07 2024-12-24 Tdk Corporation Acoustic multipath correction
JP7476039B2 (ja) 2020-09-02 2024-04-30 キオクシア株式会社 半導体装置の検査装置、及び、半導体装置の検査方法
JP7696305B2 (ja) 2021-05-12 2025-06-20 浜松ホトニクス株式会社 アクチュエータ装置
JP7672925B2 (ja) * 2021-05-12 2025-05-08 浜松ホトニクス株式会社 アクチュエータ装置
CN113709642A (zh) * 2021-06-21 2021-11-26 天津大学 压电mems执行器及其形成方法和运行方法
US12197681B2 (en) 2021-08-25 2025-01-14 Tdk Corporation Anchor configurations for an array of ultrasonic transducers
JP2024052271A (ja) * 2022-09-30 2024-04-11 富士フイルム株式会社 圧電素子及びアクチュエータ

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005203750A (ja) 2003-12-16 2005-07-28 Matsushita Electric Ind Co Ltd 圧電体薄膜装置および圧電体薄膜装置の駆動方法
CN100411214C (zh) 2003-12-16 2008-08-13 松下电器产业株式会社 压电体薄膜装置和压电体薄膜装置的驱动方法
JP2006048302A (ja) 2004-08-03 2006-02-16 Sony Corp 圧電複合装置、その製造方法、その取扱方法、その制御方法、入出力装置及び電子機器
US8114307B2 (en) * 2006-09-15 2012-02-14 Canon Kabushiki Kaisha Piezoelectric body and liquid discharge head
JP5385117B2 (ja) 2009-12-17 2014-01-08 富士フイルム株式会社 圧電ｍｅｍｓスイッチの製造方法
JP5506035B2 (ja) * 2010-02-23 2014-05-28 富士フイルム株式会社 アクチュエータの製造方法
JP5416166B2 (ja) * 2011-05-10 2014-02-12 株式会社アドバンテスト スイッチ装置および試験装置
JP5394435B2 (ja) 2011-05-13 2014-01-22 株式会社アドバンテスト 製造方法、スイッチ装置、伝送路切り替え装置、および試験装置
JP5394451B2 (ja) 2011-07-26 2014-01-22 株式会社アドバンテスト アクチュエータの製造方法、スイッチ装置、伝送路切替装置、および試験装置
JP5836754B2 (ja) * 2011-10-04 2015-12-24 富士フイルム株式会社 圧電体素子及びその製造方法
JP5539430B2 (ja) * 2012-03-22 2014-07-02 富士フイルム株式会社 電子機器の製造方法
JP6341446B2 (ja) * 2014-03-13 2018-06-13 株式会社リコー 電気機械変換素子の製造方法、電気機械変換素子、液滴吐出ヘッド、液滴吐出装置及び画像形成装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018527206A (ja) * 2015-09-03 2018-09-20 ゼネラル・エレクトリック・カンパニイ 電気めっきｍｅｍｓ構造の高融点シード金属

Also Published As

Publication number Publication date
US20190214541A1 (en) 2019-07-11
US11165011B2 (en) 2021-11-02
US20160240768A1 (en) 2016-08-18
WO2015064423A1 (ja) 2015-05-07
JP2015088521A (ja) 2015-05-07

Similar Documents

Publication Publication Date Title
JP6154729B2 (ja) 圧電体素子の製造方法
JP6346693B2 (ja) 圧電体素子の製造方法
JP5836754B2 (ja) 圧電体素子及びその製造方法
JP5506035B2 (ja) アクチュエータの製造方法
JP5836755B2 (ja) 圧電体素子及び液体吐出ヘッド
EP3036779B1 (en) Multi-layered thin film piezoelectric devices & methods of making the same
JP6464049B2 (ja) 積層構造体、圧電素子および圧電素子の製造方法
EP3203298B1 (en) Mirror drive device and drive method therefor
US8994251B2 (en) Piezoelectric device having first and second non-metal electroconductive intermediate films
JP5472549B1 (ja) 圧電素子、圧電デバイス、インクジェットヘッドおよびインクジェットプリンタ
JP5506031B2 (ja) アクチュエータ素子の駆動方法、及びデバイス検査方法
JP6426061B2 (ja) 積層薄膜構造体の製造方法、積層薄膜構造体及びそれを備えた圧電素子
JP2021086982A (ja) 圧電薄膜素子
JP5660216B2 (ja) 薄膜デバイスおよび薄膜デバイスの製造方法
WO2023195413A1 (ja) 窒化物、圧電体、圧電素子、強誘電体、及び強誘電素子
US20240114793A1 (en) Piezoelectric element and actuator
US20250107449A1 (en) Piezoelectric element and actuator
JP2025042311A (ja) 圧電積層体及び圧電素子
JP2025042312A (ja) 圧電積層体及び圧電素子
JP2007242788A (ja) 圧電薄膜素子
JP6193599B2 (ja) 角速度センサ及びその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160310

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160310

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160902

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20161019

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20170209

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170502

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20170515

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170529

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170602

R150 Certificate of patent or registration of utility model

Ref document number: 6154729

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250