WO2015064423A1 - 圧電体素子及び圧電体素子の製造方法 - Google Patents

圧電体素子及び圧電体素子の製造方法 Download PDF

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WO2015064423A1
WO2015064423A1 PCT/JP2014/077958 JP2014077958W WO2015064423A1 WO 2015064423 A1 WO2015064423 A1 WO 2015064423A1 JP 2014077958 W JP2014077958 W JP 2014077958W WO 2015064423 A1 WO2015064423 A1 WO 2015064423A1
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Prior art keywords
electrode
piezoelectric
film
piezoelectric film
intermediate layer
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French (fr)
Japanese (ja)
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藤井　隆満
崇幸 直野
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Fujifilm Corp
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Fujifilm Corp
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Priority to US16/352,770 priority patent/US11165011B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • B06B1/0607—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements
    • B06B1/0611—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements in a pile
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00158—Diaphragms, membranes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H10N30/067—Forming single-layered electrodes of multilayered piezoelectric or electrostrictive parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2041—Beam type
    • H10N30/2042—Cantilevers, i.e. having one fixed end
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2047—Membrane type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H10N30/501—Piezoelectric or electrostrictive devices having a stacked or multilayer structure having a non-rectangular cross-section in a plane parallel to the stacking direction, e.g. polygonal or trapezoidal in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/871—Single-layered electrodes of multilayer piezoelectric or electrostrictive devices, e.g. internal electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877—Conductive materials
    • H10N30/878—Conductive materials the principal material being non-metallic, e.g. oxide or carbon based

Definitions

  • the present invention relates to a piezoelectric element and a method for manufacturing the piezoelectric element, and more particularly to a piezoelectric element using a piezoelectric thin film material applied to various uses such as an actuator, a sensor, and a power generation device, and a manufacturing technique thereof.
  • a unimorph actuator having a structure in which an upper electrode / piezoelectric body / lower electrode / diaphragm is laminated is known.
  • the generated force of the unimorph actuator is generally determined by the product of the piezoelectric constant of the piezoelectric body and the applied voltage. Since the piezoelectric constant is determined depending on the material, the generation force of the unimorph actuator is theoretically limited.
  • Patent Document 1 discloses an actuator having a bimorph structure in which piezoelectric layers are stacked in two layers (FIG. 7 of Patent Document 1), which has a larger generation force than a unimorph actuator.
  • the bimorph actuator described in Patent Document 1 is manufactured by bonding two piezoelectric thin film element structures (see paragraphs 0070-0071 of Patent Document 1).
  • Patent Document 2 proposes a configuration in which a part of a piezoelectric bimorph type actuator using a laminated piezoelectric material is used as a force detection sensor.
  • the bimorph type actuator shown in Patent Document 2 is manufactured by bonding two film-like piezoelectric bodies to the front and back surfaces of a conductive member for a common electrode (see Paragraph 0074 of Patent Document 2 and FIG. 3). .
  • Patent Document 3 describes a configuration in which a two-layer piezoelectric film is formed by a vapor phase growth method via a metal oxide.
  • a lower electrode, a first piezoelectric film, a metal oxide film, a metal film, a second piezoelectric film, and an upper electrode are sequentially formed on an SOI (Silicon On On Insulator) substrate.
  • SOI Silicon On On Insulator
  • a bimorph type actuator is manufactured by adopting a configuration in which the underlying silicon layer as a vibration plate is removed from the configuration described in Patent Document 3, only a thin electrode is provided between two layers of piezoelectric films. Since it does not exist, the stress neutral surface (surface where the stress becomes zero) at the time of the bending operation easily enters the piezoelectric film, and the variation in the displacement amount increases.
  • the SOI substrate is an expensive material compared to a normal silicon substrate (non-SOI substrate) having no SOI structure, and the cost is high when the SOI substrate is used.
  • the above-mentioned problem can be grasped as a problem common to various piezoelectric elements regardless of applications, such as a sensor device, a power generation device, or a combination thereof, as well as a device for actuator application.
  • the present invention has been made in view of such circumstances, and an object of the present invention is to solve at least one of the above-described problems and provide a highly stable piezoelectric element that operates with high efficiency. It is another object of the present invention to provide a method of manufacturing a piezoelectric element that can manufacture such a piezoelectric element by a simple process.
  • the piezoelectric element according to the first aspect includes a silicon base material, a first electrode laminated on the silicon base material, a first piezoelectric film laminated on the first electrode, and a first piezoelectric element.
  • a second electrode laminated on the body film, an adhesion layer laminated on the second electrode, and a film of 0.4 ⁇ m or more and 10 ⁇ m or less on the adhesion layer made of a material different from that of the second electrode An intermediate layer stacked with a thickness; a third electrode stacked on the intermediate layer; a second piezoelectric film stacked on the third electrode; and a second piezoelectric film on the second piezoelectric film And a fourth electrode laminated.
  • the required rigidity can be maintained by the structure in which the first piezoelectric film and the second piezoelectric film are stacked with the intermediate layer interposed therebetween. Since the intermediate layer is laminated via the adhesion layer, a laminated structure having strong adhesion can be obtained. Further, by adopting a structure in which the first piezoelectric film and the second piezoelectric film are laminated, a highly efficient piezoelectric element can be obtained as compared with the conventional single-layer unimorph type configuration. it can.
  • the intermediate layer serves as a vibration plate and is used in a bending mode in which the intermediate layer bends and deforms in the film thickness direction, and the first piezoelectric film and the second piezoelectric film It can be configured to operate using displacement in the piezoelectric constant d31 direction.
  • the operation of the piezoelectric element may be a driving operation using the reverse piezoelectric effect or a detection operation using the positive piezoelectric effect.
  • the stress neutral surface in the bending deformation is present in the intermediate layer.
  • the stress neutral surface is a surface where the stress becomes zero, and is also referred to as a stress midpoint. According to the 3rd aspect, the balance of the stress at the time of operate
  • the material of the adhesion layer is a transition metal element, an oxide of a transition metal element, or a combination thereof It can be.
  • At least one element of Ti, Zr, Ni, Cr, W, Nb, and Mo is preferable to use at least one element of Ti, Zr, Ni, Cr, W, Nb, and Mo.
  • the material of the intermediate layer may be a material containing silicon.
  • Silicon (Si) has a lower thermal expansion coefficient than that of the piezoelectric material and is balanced with the silicon base material. Therefore, according to the fifth aspect, the second piezoelectric film can be easily formed.
  • each of the first piezoelectric film and the second piezoelectric film has a film thickness of 0.3 ⁇ m or more and 10 ⁇ m or less. It is preferable to set it as the structure comprised by these.
  • a piezoelectric element that can exhibit sufficient device performance and has high durability and reliability can be obtained.
  • the crystal orientation of the first piezoelectric film and the second piezoelectric film is the same directionality. can do.
  • the drive condition can be easily designed. Moreover, the balance when operating both is good and it becomes a highly reliable device.
  • the first piezoelectric film and the second piezoelectric film are oriented in the (100) direction or the (001) direction. it can.
  • the polarization direction of the first piezoelectric film is the same as the polarization direction of the second piezoelectric film. It can be configured.
  • each of the residual stress of the first piezoelectric film and the residual stress of the second piezoelectric film is an absolute value.
  • a configuration of 200 MPa or less is preferable.
  • the film is less likely to be peeled off or cracked.
  • a stress neutral surface that is a midpoint of stress calculated from the thickness and stress value of each of the first piezoelectric film, the second piezoelectric film, and the intermediate layer is present in the intermediate layer.
  • the thermal expansion coefficient of the intermediate layer is equal to the thermal expansion coefficient of the first piezoelectric film and the second piezoelectric film. It is preferable to set it as the structure which is 2 times or less.
  • the film thickness of the second piezoelectric film is 0. 1 with respect to the film thickness of the first piezoelectric film. It is preferable to set it as 5 times or more and 2 times or less.
  • the stress is balanced between the first piezoelectric film and the second piezoelectric film sandwiching the intermediate layer, it is possible to suppress the initial warp caused by the residual stress.
  • the thirteenth aspect it is possible to form a piezoelectric element with good adhesion and high film thickness uniformity and with little performance variation.
  • the thin film forming method may be a vapor phase growth method.
  • a first electrode forming step of forming a first electrode on a silicon substrate, and a first piezoelectric film is formed on the first electrode.
  • a first piezoelectric film forming step, a second electrode forming step of forming a second electrode on the first piezoelectric film, and an adhesive layer forming step of forming an adhesive layer on the second electrode And an intermediate layer forming step of forming an intermediate layer having a thickness of 0.4 ⁇ m or more and 10 ⁇ m or less on the adhesion layer using a material different from that of the second electrode, and a third electrode forming the third electrode on the intermediate layer
  • the second electrode, the intermediate layer, the adhesion layer, the third electrode, the second piezoelectric film, and the fourth electrode are each formed by a thin film forming method.
  • a piezoelectric element that operates with high efficiency can be manufactured by a simple process.
  • the matters specified in the second aspect to the fourteenth aspect can be appropriately combined.
  • the piezoelectric element according to the present invention can provide a highly stable piezoelectric element that operates with high efficiency. Moreover, according to the method for manufacturing a piezoelectric element according to the present invention, a highly stable piezoelectric element that operates with high efficiency can be manufactured by a simple process.
  • FIG. 1 is a cross-sectional view illustrating a configuration example of a piezoelectric element according to an embodiment of the present invention.
  • FIG. 2 is a schematic diagram showing a laminated structure of piezoelectric elements according to this embodiment.
  • FIG. 3 is an explanatory diagram of the manufacturing process of the piezoelectric element.
  • FIG. 4 is an explanatory diagram of the manufacturing process of the piezoelectric element.
  • FIG. 5 is a scanning electron micrograph showing the structure of a laminate produced as an example.
  • FIG. 6 is a diagram showing an X-ray diffraction analysis result of the laminate (FIG. 5) manufactured according to the example.
  • FIG. 7 is a schematic cross-sectional view of a device structure used in a device evaluation experiment.
  • FIG. 1 is a cross-sectional view illustrating a configuration example of a piezoelectric element according to an embodiment of the present invention.
  • FIG. 2 is a schematic diagram showing a laminated structure of piezoelectric elements according to
  • FIG. 8 is an explanatory diagram illustrating an example of a method for applying a drive voltage.
  • FIG. 9 is a table summarizing the results of device evaluation experiments.
  • FIG. 10 is a chart summarizing the results of device evaluation experiments.
  • FIG. 11 is a diagram showing the relationship among the film thickness (t 1 ) of the first piezoelectric film, the film thickness (t 2 ) of the second piezoelectric film, and the necessary diaphragm thickness (t v ).
  • FIG. 13 is a diagram illustrating an example of the waveform of the drive voltage.
  • FIG. 1 is a cross-sectional view showing a configuration example of a piezoelectric element according to an embodiment of the present invention.
  • a first electrode 14 is laminated on a silicon (Si) substrate 12, and further, a first piezoelectric film 16 and a second electrode 14 are formed on the first electrode 14.
  • MEMS Micro Electro Mechanical Systems
  • the intermediate layer 22 is made of a material different from that of the second electrode 18 and functions as a diaphragm.
  • the intermediate layer 22 has a film thickness of 0.4 ⁇ m or more and 10 ⁇ m or less.
  • a part of the silicon substrate 12 is removed, and a recess 32 is formed in the removed portion.
  • the piezoelectric element 10 includes a first electrode 14, a first piezoelectric film 16, a second electrode 18, an adhesion layer 20, an intermediate layer 22, at a position corresponding to the opening area A of the recess 32 of the silicon substrate 12.
  • a portion of the laminated body 34 of the third electrode 24, the second piezoelectric film 26, and the fourth electrode 28 has a diaphragm structure that functions as a movable part that can bend and deform in the film thickness direction (vertical direction in FIG. 1). .
  • the silicon substrate 12 includes a first electrode 14, a first piezoelectric film 16, a second electrode 18, an adhesion layer 20, an intermediate layer 22, a third electrode 24, a second piezoelectric film 26, and a fourth electrode. It becomes a support part which supports the laminated body 34 of the electrode 28 of this. That is, the silicon substrate 12 functions as a fixed portion that fixes the edge of the movable portion corresponding to the opening region A of the recess 32.
  • the piezoelectric element 10 is used in a bending mode in which the intermediate layer 22 becomes a vibration plate and bends and deforms in the film thickness direction, and the displacement of the first piezoelectric film 16 and the second piezoelectric film 26 in the direction of the piezoelectric constant d31 is detected. Use and work.
  • the film thicknesses and ratios of the layers shown in FIG. 1 and other drawings are appropriately changed for convenience of explanation, and do not necessarily reflect actual film thicknesses and ratios.
  • the direction away from the surface of the silicon base material 12 in the base material thickness direction is expressed as “up”.
  • the first electrode 14 and other layers (14 to 28) are sequentially stacked on the upper surface of the silicon substrate 12 with the silicon substrate 12 held horizontally. This corresponds to the vertical relationship when the direction (downward in FIG. 1) is the downward direction.
  • the posture of the silicon substrate 12 can be tilted or reversed.
  • a direction away from the surface in the thickness direction with respect to the surface is expressed as “up”.
  • the first electrode 14 is formed on the silicon substrate 12 and the first piezoelectric film 16 is stacked thereon. Is done.
  • the expression “stacking B on A” is not limited to the case of directly stacking B on A in contact with A, but intervening one or more other layers between A and B, In some cases, B may be laminated on A via one or more layers.
  • FIG. 2 is a schematic diagram showing a laminated structure of the piezoelectric element 10.
  • a standard commercially available silicon wafer (a non-SOI substrate having no SOI structure) is used for the lowermost silicon substrate 12.
  • Each layer (14 to 28) is formed on the silicon substrate 12 by a thin film forming method.
  • Thin film formation methods include physical vapor deposition (PVD), chemical vapor deposition (CVD), and liquid deposition (plating, coating, sol-gel, spin Coating method) and thermal oxidation method.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • liquid deposition plating, coating, sol-gel, spin Coating method
  • thermal oxidation method thermal oxidation method.
  • the first electrode 14 of this example has a configuration in which a Ti layer 14A is formed in contact with the silicon substrate 12 by a vapor deposition method typified by sputtering, and an Ir layer 14B is formed on the Ti layer 14A. It has become.
  • the material constituting the first electrode 14 is Pt (platinum), Al (aluminum), Mo (molybdenum), TiN (titanium nitride), Ru (ruthenium), Au (gold), silver (Ag) ) Or the like can be used.
  • TiW can be used in place of Ti as an adhesion layer for improving the adhesion with the silicon substrate 12.
  • the thickness of the first electrode 14 can be designed to an appropriate thickness, but is preferably in the range of several tens of nanometers to several hundreds of nanometers, for example, in the range of 50 nm to 300 nm. Make the film thickness.
  • the first piezoelectric film 16 is formed by a method of raising the substrate temperature (preferably at 400 ° C. or higher) and crystallizing it during film formation by a vapor phase growth method typified by a sputtering method.
  • the material is not particularly limited as long as it is an oxide piezoelectric body.
  • the film thickness of the first piezoelectric film 16 is preferably 0.3 ⁇ m or more and 10 ⁇ m or less. If the thickness is less than 0.3 ⁇ m, a driving force sufficient as an actuator cannot be generated, and it may be difficult to extract a sufficient voltage signal as a sensor or a power generation device.
  • the first piezoelectric film 16 is too thin, there is a possibility that the first piezoelectric film 16 is broken by a leak current. Furthermore, if the first piezoelectric film 16 is too thin, the crystallinity of the piezoelectric body is deteriorated, and a problem that required piezoelectric performance cannot be obtained may occur. On the other hand, if the thickness of the first piezoelectric film 16 exceeds 10 ⁇ m, cracks are likely to be generated or peeled off, which makes film formation by vapor phase growth difficult.
  • the thickness of the first piezoelectric film 16 is preferably 0.3 ⁇ m or more and 10 ⁇ m or less, more preferably 0.5 ⁇ m or more and 8 ⁇ m or less, and further preferably 1 ⁇ m or more and 7 ⁇ m or less. .
  • the second electrode 18 for example, an oxide of Ir is used.
  • the Ir oxide is denoted as “IrOx”.
  • x is an arbitrary number representing the composition ratio.
  • the material of the second electrode 18 is not limited to IrOx, and other conductive materials can be used.
  • a metal oxide is used as the second electrode 18, it functions as a diffusion block layer that blocks the diffusion reaction of oxygen atoms and piezoelectric material components from the first piezoelectric film 16.
  • the adhesion layer 20 is laminated on the second electrode 18.
  • the material of the adhesion layer 20 is preferably a transition metal element, an oxide of a transition metal element, or an appropriate combination thereof.
  • Ti, Zr, Ni, Cr, W, Nb, Mo, or an oxide thereof is preferable.
  • the adhesion layer 20 of Ti is used.
  • the intermediate layer 22 is preferably made of a material containing silicon (Si) as a main component. “Containing as a main component” means containing 50% by mass or more. Since Si has a lower thermal expansion coefficient than the piezoelectric material, and the lowermost (underlying) base material is the silicon base material 12, a thin film can be obtained by using a material mainly composed of Si for the intermediate layer 22. Are easy to laminate. That is, by forming the Si intermediate layer 22 after the first piezoelectric film 16 is formed, a balance with the underlying Si can be obtained, so that the second piezoelectric film 26 is easily formed.
  • the intermediate layer 22 and the second piezoelectric film 26 are peeled off when formed. It becomes easy. For this reason, even if it is a case where it does not peel in a stationary state, peeling will occur by driving for a long time etc., and it will be inferior to durability. Therefore, a configuration in which the intermediate layer 22 is formed on the second electrode 18 via the adhesion layer 20 is preferable. The electrical characteristics of the adhesion layer 20 and the intermediate layer 22 do not matter.
  • the intermediate layer 22 is preferably formed by a vapor deposition method. By forming the intermediate layer 22 by the vapor phase growth method, the piezoelectric element 10 having continuous and good adhesion and high film thickness uniformity can be manufactured.
  • the intermediate layer 22 can be formed by a method other than the vapor phase growth method, for example, when a method of bonding and polishing materials is employed, the accuracy of the film thickness by polishing is determined by the vapor phase growth method. This is insufficient compared to the accuracy, and may cause variations in element performance (characteristics).
  • a method such as a sol-gel method or a screen printing method is used, a high-temperature heat treatment (firing treatment) is required to fire the intermediate layer, and causes stress in the piezoelectric film due to cracks and thermal expansion coefficient differences.
  • a vapor phase growth method from the viewpoint of avoiding the above-mentioned concerns.
  • the third electrode 24 formed on the intermediate layer 22 has a laminated film structure of a Ti layer 24A and an Ir layer 24B.
  • the material constituting the third electrode 24 can be the same material as that of the first electrode 14.
  • the first electrode 14 and the third electrode 24 may be made of the same material or different materials.
  • the second piezoelectric film 26 is formed by a method of crystallizing during film formation by raising the substrate temperature by vapor deposition (preferably at 400 ° C. or higher).
  • the thickness of the second piezoelectric film 26 is preferably 0.3 ⁇ m or more and 10 ⁇ m or less, more preferably 0.5 ⁇ m or more and 8 ⁇ m or less, and even more preferably. Is preferably 1 ⁇ m or more and 7 ⁇ m or less.
  • the first piezoelectric film 16 and the second piezoelectric film 26 may have the same film thickness or different film thicknesses. Further, as the material of the second piezoelectric film 26, it is preferable to use a material equivalent to that of the first piezoelectric film 16, but different materials may be used.
  • the fourth electrode 28 formed on the second piezoelectric film 26 various materials can be used for the fourth electrode 28 formed on the second piezoelectric film 26.
  • the fourth electrode 28 of this example has a configuration in which a Pt layer 28B is laminated on a Ti layer 28A. Further, a TiW layer can be used instead of the Ti layer 28A.
  • ⁇ Specific example of manufacturing method> 3 and 4 are diagrams showing a manufacturing process of the piezoelectric element according to the embodiment.
  • a substrate to be a silicon (Si) base 12 is prepared (part (A) of FIG. 3 “substrate preparation step”).
  • substrate preparation step an example in which a silicon wafer having a non-SOI structure is used is shown.
  • the silicon wafer may have a structure having a SiO 2 film (oxide film) on the surface thereof.
  • the first electrode 14 is formed on one side surface (upper surface in part (B) of FIG. 3) of the silicon substrate 12 ("first" 1 electrode formation process ").
  • first electrode 14 a Ti layer 14A having a thickness of 20 nm was formed by sputtering, and an Ir layer 14B having a thickness of 150 nm was formed on the Ti layer 14A.
  • the substrate temperature during film formation was set to 350 degrees.
  • the first electrode 14 made of a laminated film of Ir (150 nm) / Ti (20 nm) functions as a “first lower electrode”.
  • a first piezoelectric film 16 is formed on the first electrode 14 (“first piezoelectric film forming step”).
  • the substrate temperature was set to about 500 ° C. (for example, 480 ° C.), and a PZT film doped with Nb at 13% (atomic composition ratio) was formed to a thickness of 2.5 ⁇ m by sputtering.
  • Nb-doped PZT (PNZT) is simply expressed as “PZT”.
  • the first piezoelectric film 16 was formed using a radio frequency (RF) magnetron sputtering apparatus.
  • RF radio frequency
  • a film forming gas was a mixed gas of 97.5% Ar and 2.5% O 2 , and a target material having a composition of Pb 1.3 ((Zr 0.52 Ti 0.48 ) 0.88 Nb 0.12 ) O 3 was used.
  • the film forming pressure was 2.2 mTorr (0.293 Pa).
  • the second electrode 18 is formed on the first piezoelectric film 16 ("second electrode forming step").
  • the second electrode 18 either an oxide electrode or a non-oxide electrode may be used, but an oxide electrode is preferable from the viewpoint of adhesion and durability.
  • the second electrode 18 is desired to be stable with respect to the film formation temperature of the second piezoelectric film 26.
  • the oxide electrode ITO, IrOx, or the like is preferable.
  • an IrOx film having a thickness of 200 nm was formed on the first piezoelectric film 16 by sputtering at a film forming temperature of 350 ° C.
  • the second electrode 18 made of an IrOx film (200 nm) functions as a “first upper electrode”.
  • the adhesion layer 20 is formed on the second electrode 18 (“adhesion layer formation step”).
  • a Ti layer as the adhesion layer 20 was formed with a thickness of 20 nm.
  • an intermediate layer 22 to be a vibration plate is formed on the adhesion layer 20 (“intermediate layer forming step”).
  • a silicon film as the intermediate layer 22 is formed with a film thickness of 3 ⁇ m by sputtering.
  • the film forming method is not limited to the sputtering method, and CVD, laser ablation, or the like may be used.
  • the Si film constituting the intermediate layer 22 is preferably a columnar structure. If it is a columnar structure, it will displace efficiently with respect to the displacement in the bending mode which bends and deforms in the film thickness direction.
  • a thin film having a columnar structure can be formed by forming a film by vapor deposition.
  • the intermediate layer 22 preferably contains an amorphous component.
  • an amorphous component in the Si film there is an advantage that it is strong against impacts such as cracks.
  • the uniformity of the film thickness of the intermediate layer 22 is preferably 10% or less of the film thickness variation within a 6-inch wafer surface, for example. A uniform film thickness is preferable in that variation in device performance is reduced. According to the film thickness accuracy of the vapor phase growth method, the desired uniformity can be ensured.
  • a target film thickness uniformity it is often difficult to achieve a target film thickness uniformity by a method of bonding materials using an adhesive or adjusting a film thickness by polishing when a laminated structure is manufactured.
  • a direct film formation method such as a vapor phase growth method or a sol-gel method, a thin film can be formed with a film thickness accuracy that satisfies the target film thickness uniformity.
  • the film thickness of the intermediate layer 22 is preferably 0.4 ⁇ m or more and 10 ⁇ m or less. This is because the midpoint (stress neutral surface) of the stress when displacing in the bending mode is located in the intermediate layer 22 of the non-driving part, so that the displacement efficiency is increased.
  • a third electrode 24 is formed on the intermediate layer 22 of the Si film (“third electrode forming step”).
  • the Ti layer 24A was formed with a thickness of 20 nm by a sputtering method
  • the Ir layer 24B was formed with a thickness of 150 nm on the Ti layer 24A.
  • the substrate temperature during film formation was set to 350 degrees.
  • a second piezoelectric film 26 is formed on the third electrode 24 (“second piezoelectric film forming step”).
  • the substrate temperature is set to about 500 ° C. (for example, 480 ° C.), and a PZT film doped with Nb at 13% (atomic composition ratio) is sputtered.
  • the film was formed with a thickness of 0.0 ⁇ m.
  • the film forming conditions are the same as those of the first piezoelectric film 16.
  • FIG. 5 shows, for reference, a SEM (Scanning Electron Microscope) photograph of a cross section in the film configuration of the laminate in a state where the second piezoelectric film 26 is formed in Step 8.
  • SEM Sccanning Electron Microscope
  • a fourth electrode 28 is formed on the second piezoelectric film 26 (“fourth electrode forming step”).
  • the Ti layer 28A was formed with a thickness of 20 nm by sputtering
  • the Pt layer 28B was formed with a thickness of 150 nm on the Ti layer 28A.
  • the substrate temperature during film formation was room temperature.
  • the fourth electrode 28 made of the laminated film of Pt (150 nm) / Ti (20 nm) functions as a “second upper electrode”.
  • the fourth electrode 28 may be patterned in combination with lift-off.
  • a third piezoelectric film can be further laminated on the fourth electrode 28. If there is no step of laminating the third piezoelectric film on the fourth electrode 28, the fourth electrode 28 can be formed at room temperature. Furthermore, as the fourth electrode 28, either an oxide electrode or a non-oxide electrode may be used.
  • Step 10 The laminated structure thus obtained is patterned into a desired device shape by dry etching (“device pattern processing step”).
  • Step 11 Thereafter, Si is dug from the back side of the silicon base material 12, and a part of the silicon base material 12 is removed to form a diaphragm structure (see FIG. 1) ("removal processing step"). .
  • the technology for deep digging of Si is a microfabrication technology that uses reactive ion etching (Reactive Ion Etching) ⁇ , and is called deep digging RIE.
  • a stop layer for stopping the etching when etching the silicon substrate 12 on the back surface may be provided in advance on the silicon substrate 12.
  • a SiO 2 film can be formed on the surface of a silicon wafer as a base material, and this SiO 2 film can be used as an etching stop layer.
  • the etching may be dry etching or wet etching. A known etching technique can be applied.
  • a part of the silicon base 12 can be removed to form a cantilever (cantilever) structure. is there.
  • the film may be returned to the atmosphere or room temperature, or may be continuously formed. Moreover, you may perform the patterning (patterning) of a process as needed. Although materials other than PZT may be formed at room temperature, it is preferable to form the film by heating, from the viewpoint of durability because the stress applied to PZT can be reduced.
  • FIG. 6 shows the result of analysis by XRD (X-ray diffraction) of a laminate of two piezoelectric films (FIG. 5) produced according to the example.
  • the horizontal axis represents the angle of reflection angle 2 ⁇
  • the vertical axis represents the diffraction intensity.
  • the unit of diffraction intensity on the vertical axis is cps (count per second).
  • reference numeral 61 indicates the XRD measurement result of the first piezoelectric film 16 of the first layer (see FIG. 1)
  • reference numeral 62 of FIG. 6 indicates the second piezoelectric film 26 of the second layer (FIG. 2).
  • FIG. 6 shows the result of analysis by XRD (X-ray diffraction) of a laminate of two piezoelectric films (FIG. 5) produced according to the example.
  • the horizontal axis represents the angle of reflection angle 2 ⁇
  • the vertical axis represents the diffraction intensity.
  • the first piezoelectric film 16 manufactured in this example has a crystal orientation distribution oriented in the (100) orientation or the (001) orientation, and is formed by being laminated thereon.
  • the second piezoelectric film 26 is also a high-orientation piezoelectric film having crystal orientation oriented in the (100) direction or (001) direction.
  • the piezoelectric body has different piezoelectric performance in the bending mode, that is, d31 piezoelectric constant (pm / V) depending on crystal orientation.
  • d31 piezoelectric constant (pm / V) depending on crystal orientation.
  • the driving conditions can be handled in the same manner, and the shift of the stress neutral plane can be suppressed, so that the first piezoelectric film 16 and the second piezoelectric film 26
  • An embodiment in which the crystal orientation is the same direction is preferable.
  • each piezoelectric body has an orientation of (100) orientation and the other piezoelectric film has an orientation of (111) orientation, each piezoelectric body
  • the driving design is complicated because the driving conditions of the film are greatly different.
  • the stress value of the residual stress in the piezoelectric film (16, 26) manufactured in this example was calculated from the measurement result of the warpage amount, and was a tensile stress, which was about “+150 MPa”.
  • the stress value exceeded “+200 MPa”
  • the piezoelectric film was cracked during the film formation process. Generated and peeled off. From such experimental findings, the stress of the piezoelectric film (16, 26) is desirably 200 MPa or less in absolute value.
  • the midpoint (stress neutral surface) of the stress at the time of bending drive exists in the intermediate layer 22 (see FIG. 1). If the midpoint of stress deviates from the intermediate layer 22 and is present in the first piezoelectric film 16 or the second piezoelectric film 26, the stress balance may be greatly disrupted during driving, and the displacement characteristics may change greatly. There is.
  • the intermediate layer 22 has an appropriate thickness so that a stress neutral surface exists in the intermediate layer 22, and the intermediate layer 22 has a thickness of at least 0.3 ⁇ m or more.
  • the intermediate layer 22 has a thickness of 2.0 ⁇ m or more.
  • the upper limit of the film thickness of the intermediate layer 22 is not particularly limited, but it is considered that the range in which a film can be satisfactorily formed by a direct film formation method such as a vapor deposition method is about 10 ⁇ m. In this example, the thickness of the intermediate layer 22 was 3 ⁇ m.
  • the thermal expansion coefficient of the piezoelectric material is about 6 to 8 ppm / ° C.
  • the thermal expansion coefficient of silicon is about 2.4 ppm / ° C.
  • the midpoint of the stress change due to the difference in thermal expansion coefficient between the piezoelectric material and the intermediate layer 22 exists in the intermediate layer 22 in a heating or use environment.
  • the thermal expansion coefficient of the intermediate layer 22 is preferably less than or equal to twice the thermal expansion coefficient of the piezoelectric material, and more preferably a lower thermal expansion coefficient than that of the piezoelectric material. Is better.
  • silicon (Si) having a thermal expansion coefficient lower than that of the piezoelectric material (PZT) is used as the material of the intermediate layer 22.
  • the polarization direction of the first piezoelectric film 16 was changed from the first electrode 14 to the first piezoelectric film 16.
  • the direction of polarization of the second piezoelectric film 26 is the direction from the third electrode 24 toward the fourth electrode 28.
  • the first piezoelectric film 16 has a second direction in which a negative potential is applied to the second electrode 18 when the first electrode 14 is set to the ground potential.
  • a negative potential is applied to the fourth electrode when the third electrode is set to the ground potential.
  • the piezoelectric film tends to contract in the plane direction due to the piezoelectric lateral effect (d31 mode).
  • the intermediate layer 22 as a vibration plate restrains deformation of the piezoelectric film, so that the vibration plate bends (bends) in the thickness direction.
  • Either positive or negative potential may be selected as a driving voltage for applying an electric field to the piezoelectric film. Also in the driving direction, in FIG. 1, whether the vibration plate is bent upward or downward is determined by the relationship between the polarization direction of the piezoelectric body and the vibration plate as the intermediate layer 22. I can decide.
  • the phase of the voltage applied to the first piezoelectric film 16 and the phase of the voltage applied to the second piezoelectric film 26 may be changed.
  • the driving method can be freely selected according to the application / purpose of the device. For example, when the first piezoelectric film 16 and the second piezoelectric film 26 are driven out of phase with each other, it is approximately twice as effective as when only one of the piezoelectric films is driven. Displacement can be realized. Some electrodes can also be used for sensing. For example, in the piezoelectric element 10 shown in FIG. 1, the first piezoelectric film 16 can be used for detection (sensing), and the second piezoelectric film 26 can be used for driving (actuator).
  • the first element portion having a configuration in which the first piezoelectric film 16 is sandwiched between the first electrode 14 and the second electrode 18 uses the positive piezoelectric effect. It functions as a sensor unit that converts 16 displacements into electrical signals.
  • the second element portion having the configuration in which the second piezoelectric film 26 is sandwiched between the third electrode 24 and the fourth electrode 28 uses the inverse piezoelectric effect to drive the second voltage. It functions as a drive unit that converts the displacement of the piezoelectric film 26.
  • the displacement amount is grasped by referring to the correlation data from the detected voltage information. Is possible.
  • the piezoelectric element 10 of the present embodiment is not limited to a form used as an actuator or a sensor, but can also be used as a power generation device that converts displacement of the piezoelectric film into electric energy.
  • FIG. 7 is a schematic cross-sectional view of the cantilever structure used in the evaluation experiment. Although the illustration is simplified in FIG. 7, the actual laminated structure is as described in FIG. In FIG. 7, the same elements as those described in FIG.
  • the left end supported by the silicon substrate 12 serves as a fixed portion.
  • the film thickness of the first piezoelectric film 16 is t 1
  • the film thickness of the second piezoelectric film 26 is t 2
  • the thickness of the portion sandwiched between them that is, the intermediate layer 22 and the second electrode 18.
  • the amount of static displacement when a driving voltage was applied and the variation in the amount of displacement when a sinusoidal driving voltage was continuously applied were evaluated.
  • the second electrode 18 and the third electrode 24 are set to the ground potential (GND), and the drive voltage applied to the first electrode 14 is V 1 , the fourth voltage.
  • the driving voltage applied to the electrode 28 was set to V 2.
  • FIG. 9 is a chart summarizing the evaluation results for each sample of the manufactured device. 9, the unit of t 1, t 2, t v is the micrometer [[mu] m]. In FIG. 9, “AA” indicates that there is very little variation in the amount of displacement, which is extremely good. “A” indicates that the level is practically acceptable and that the variation in displacement is small and good. “C” indicates that the variation of the displacement amount is large.
  • the structure having two layers of piezoelectric films shows a higher displacement than the structure having only one layer of piezoelectric films.
  • variations in the thickness t v corresponding to the intermediate layer is 0.3 [mu] m or less displacement amount is large, t v is improved variation of the displacement amount exceeds 0.3 [mu] m.
  • t v is preferably at 0.4 ⁇ m or more, and more preferably more than 0.5 [mu] m.
  • FIG. 10 shows the results of evaluation of warpage due to residual stress.
  • the unit of t 1, t 2, t v is the micrometer [[mu] m].
  • “A” indicates that there is almost no warpage and is good, and “C” indicates that warpage has occurred.
  • the thickness of the second piezoelectric film is the first.
  • the thickness is preferably in the range of 0.5 to 2 times the thickness of the piezoelectric film.
  • the device When the silicon substrate 12 is etched to obtain a device shape such as a diaphragm structure or a cantilever structure and used as a device, the device may be warped depending on the use environment.
  • the cause of the warp is mainly due to the difference in thermal expansion coefficient between the piezoelectric material used for the piezoelectric films (16, 26) and the material of the intermediate layer 22. If the ratio of the thickness of the second piezoelectric film 26 to the first piezoelectric film 16 is in the range of 0.5 to 2, it is balanced by the two piezoelectric films (16, 26) sandwiching the intermediate layer 22 therebetween. It is preferable because it can be removed and the amount of warpage is relatively small.
  • the evaluation of the warpage is an evaluation of “C”, but may be an acceptable level depending on the use of the device.
  • E p represents the Young's modulus of the piezoelectric body
  • E v represents the Young's modulus of the intermediate layer.
  • Equations 2 and 3 For reference, an illustration of Equations 2 and 3 is shown in FIG. In FIG. 11, the unit of each axis is micrometer ( ⁇ m).
  • a piezoelectric film is formed with a film thickness of about 3 ⁇ m by a film formation method such as vapor deposition, it is generally assumed that a film thickness variation of about ⁇ 10% occurs.
  • the film thickness variation of ⁇ 13% ( ⁇ 0.4 ⁇ m) occurs.
  • the thickness of the intermediate layer necessary for accommodating the stress neutral surface in the intermediate layer 22 is 0.4 ⁇ m or more (see FIG. 12).
  • an offset voltage (DC voltage component) Vc as shown in FIG. 13 is included so as not to cause polarization inversion of the piezoelectric body by the applied voltage.
  • a waveform may be input.
  • Vc is selected to have a voltage value that does not exceed the coercive electric field of the piezoelectric body.
  • the range of ⁇ 1 ⁇ m changes. Therefore, in order to take the position x of the stress neutral surface always in the intermediate layer, it is desirable t v is 2 ⁇ m or more.
  • Examples of the piezoelectric material suitable for this embodiment include those containing one or more perovskite oxides (general formula P) represented by the following formula.
  • A is an element of the A site and is at least one element including Pb.
  • B is an element of the B site, and includes Ti, Zr, V, Nb, Ta, Sb, Cr, Mo, W, Mn, Sc, Co, Cu, In, Sn, Ga, Zn, Cd, Fe, and Ni. At least one element selected from the group consisting of: O: Oxygen element.
  • the molar ratio of the A site element, the B site element, and the oxygen element is 1: 1: 3 as a standard, but these molar ratios may deviate from the reference molar ratio as long as a perovskite structure can be obtained.
  • Perovskite oxides represented by the above general formula include lead titanate, lead zirconate titanate (PZT), lead zirconate, lead lanthanum titanate, lead lanthanum zirconate titanate, lead zirconium titanate niobate , Lead-containing compounds such as lead zirconium niobate titanate titanate and lead zinc niobate titanate titanate, and mixed crystals thereof; barium titanate, strontium barium titanate, bismuth sodium titanate, bismuth potassium titanate, niobic acid Non-lead-containing compounds such as sodium, potassium niobate, lithium niobate, bismuth ferrite, and mixed crystals thereof can be mentioned.
  • the piezoelectric film of the present embodiment preferably includes one or more perovskite oxides (PX) represented by the following formula.
  • A is an element of the A site and is at least one element including Pb.
  • the perovskite oxide (PX) is an intrinsic PZT or a part of the B site of PZT substituted with M. It is known that PZT to which various donor ions having a valence higher than that of the substituted ion are added has improved characteristics such as piezoelectric performance as compared with intrinsic PZT.
  • M is preferably one or more donor ions having a valence higher than that of tetravalent Zr or Ti. Examples of such donor ions include V 5+ , Nb 5+ , Ta 5+ , Sb 5 +, Mo 6+ , and W 6+ .
  • Bxy is not particularly limited as long as it has a perovskite structure.
  • M is Nb
  • the Nb / (Zr + Ti + Nb) molar ratio is preferably 0.05 or more and 0.25 or less, and more preferably 0.06 or more and 0.20 or less.
  • the piezoelectric film made of the perovskite oxide represented by the above general formulas (P) and (PX) has a high piezoelectric constant (d31 constant), the piezoelectric element including such a piezoelectric film is displaced. Excellent characteristics and detection characteristics.
  • a Pb-based piezoelectric material has been described, a lead-free perovskite-type piezoelectric material can also be suitably used in the practice of the present invention.
  • a vapor phase growth method As a method for forming the piezoelectric film, a vapor phase growth method is preferable. For example, various methods such as ion plating, MOCVD (metal organic chemical vapor deposition), and PLD (pulse laser deposition) can be applied in addition to sputtering. It is also conceivable to use a method other than vapor phase growth (for example, a sol-gel method).
  • the manufacturing process can be simplified by forming the piezoelectric film directly on the substrate by sputtering and reducing the thickness of the piezoelectric film.
  • the piezoelectric film thus formed can be easily finely processed by etching or the like, and can be patterned into a desired shape. As a result, the yield can be greatly improved and the device can be made smaller.
  • the electrode material, piezoelectric material, film thickness of each layer, film forming conditions, and the like can be appropriately selected depending on the purpose.
  • Si is used in the above description, but as another example, the structure similar to the structure described in FIG. The material was deposited. However, the addition amount of Ni is less than 50% by mass ratio.
  • the thermal expansion coefficient of the Si—Ni material is between the thermal expansion coefficient of Si (2.4 ppm / ° C.) and the thermal expansion coefficient of Ni (12.8 ppm / ° C.), depending on the composition ratio of Si and Ni. Value.
  • the intermediate layer 22 made of a material containing Si as a main component and added with Ni has conductivity, and can function as a common electrode for the first piezoelectric film 16 and the second piezoelectric film 26.
  • metal elements other than Ni in the range which becomes Si as a main component and you may add and combine multiple types of metal elements in Si.
  • FIG. 1 a structure in which two layers of piezoelectric films (16, 26) are stacked with the intermediate layer 22 in between is illustrated. However, in the practice of the present invention, a piezoelectric film is further formed on the fourth electrode 28. It is also possible to form a structure in which a plurality of piezoelectric films of three or more layers are stacked.
  • ⁇ Modification 3> It can be set as the device which operate
  • the drive voltage applied to the first piezoelectric film 16 and the drive voltage applied to the second piezoelectric film 26 are alternating currents, and can have drive waveforms having different phases.
  • the piezoelectric element As a specific application example of the piezoelectric element according to the present embodiment, it has a structure suitable as a device for various applications such as an inkjet apparatus, a high frequency switch, a micromirror, a power generation device, a speaker, a vibrator, a pump, and an ultrasonic probe. Can be applied.
  • the drive voltage for obtaining the equivalent displacement is approximately compared with the configuration having only one piezoelectric film (single layer). It can be halved.
  • the piezoelectric element 10 of this embodiment when used as an actuator, a large displacement can be obtained by applying a relatively low driving voltage.
  • the burden on the control circuit including the drive circuit is reduced due to the decrease in the drive voltage, and cost reduction, power saving, durability improvement, and the like can be realized.
  • the piezoelectric element 10 of this embodiment when used as a sensor, a large voltage signal can be obtained by deformation of the piezoelectric film, and sensor sensitivity can be improved.
  • the piezoelectric element 10 of the present embodiment when used as a power generation device, the power generation voltage can be increased by stacking the piezoelectric films, and the same effect as that obtained by increasing the area in plane can be obtained. Thereby, a small device with good power generation efficiency can be realized, and desired power generation performance suitable for practical use can be realized.
  • the film thickness of the intermediate layer 22 By setting the film thickness of the intermediate layer 22 to 0.4 ⁇ m or more, more preferably 2.0 ⁇ m or more, the stress neutral surface at the time of bending deformation can be present in the intermediate layer 22, and the displacement Stability is improved. Further, since the rigidity of the movable part is increased, it can be used as a drive source for a device having a high resonance frequency. Further, even if the film thickness and stress of the first piezoelectric film 16 and the second piezoelectric film 26 are different, the initial deflection is relatively small, and the device can be operated normally.
  • a piezoelectric element having high stability and reliability can be obtained.
  • SYMBOLS 10 Piezoelectric element, 12 ... Silicon base material, 14 ... 1st electrode, 16 ... 1st piezoelectric film, 18 ... 2nd electrode, 20 ... Adhesion layer, 22 ... Intermediate

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