US20160240768A1 - Piezoelectric element and method for manufacturing piezoelectric element - Google Patents

Piezoelectric element and method for manufacturing piezoelectric element Download PDF

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US20160240768A1
US20160240768A1 US15/137,142 US201615137142A US2016240768A1 US 20160240768 A1 US20160240768 A1 US 20160240768A1 US 201615137142 A US201615137142 A US 201615137142A US 2016240768 A1 US2016240768 A1 US 2016240768A1
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electrode
piezoelectric
piezoelectric film
film
interlayer
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Takamichi Fujii
Takayuki Naono
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Fujifilm Corp
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Fujifilm Corp
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    • H01L41/083—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • B06B1/0607—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements
    • B06B1/0611—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements in a pile
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00158—Diaphragms, membranes
    • H01L41/0471—
    • H01L41/0805—
    • H01L41/27—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H10N30/067—Forming single-layered electrodes of multilayered piezoelectric or electrostrictive parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2041—Beam type
    • H10N30/2042—Cantilevers, i.e. having one fixed end
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2047—Membrane type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H10N30/501—Piezoelectric or electrostrictive devices having a stacked or multilayer structure having a non-rectangular cross-section in a plane parallel to the stacking direction, e.g. polygonal or trapezoidal in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/871—Single-layered electrodes of multilayer piezoelectric or electrostrictive devices, e.g. internal electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877—Conductive materials
    • H10N30/878—Conductive materials the principal material being non-metallic, e.g. oxide or carbon based

Definitions

  • the present invention relates to a piezoelectric element and a method for manufacturing a piezoelectric element.
  • the present invention relates to a piezoelectric element using a piezoelectric thin film material, which is used for various uses such as an actuator, a sensor, or a power generation device, and a method for manufacturing the same.
  • a unimorph actuator having a structure in which an upper electrode, a piezoelectric body, a lower electrode, and a vibration plate are laminated is known.
  • the generative force of the unimorph actuator is substantially determined from a product of a piezoelectric constant of a piezoelectric body and an applied voltage. Since the piezoelectric constant is determined depending on the material, there is a physical limit in the generative force of the unimorph actuator.
  • JP2005-203750A discloses an actuator which has a bimorph structure having a configuration in which two piezoelectric layers are laminated (FIG. 7 of JP2005-203750A).
  • the bimorph actuator disclosed in JP2005-203750A is manufactured by bonding two structures including a piezoelectric thin film element to each other (refer to paragraphs “0070” to “0071” of JP2005-203750A).
  • JP2006-48302A discloses a configuration in which a part of a piezoelectric bimorph actuator using a laminated piezoelectric body is used as a force detecting sensor.
  • the bimorph actuator disclosed in JP2006-48302A is manufactured by bonding two film-shaped piezoelectric bodies to front and back surfaces of a conductive member for a common electrode (refer to paragraph “0074” and FIG. 3 of JP2006-48302A).
  • JP2013-80886A discloses a configuration in which two piezoelectric films are formed using a vapor phase epitaxial method with a metal oxide interposed therebetween.
  • JP2013-80886A discloses a method for manufacturing an actuator having a diaphragm structure, the method including: forming a lower electrode, a first piezoelectric film, a metal oxide film, a metal film, a second piezoelectric film, and an upper electrode on a silicon on insulator (SOI) substrate; and removing a part of a silicon layer by etching a back surface of the SOI substrate.
  • SOI silicon on insulator
  • the piezoelectric actuators of the related art disclosed in JP2005-203750A and JP2006-48302A are manufactured by bonding two piezoelectric bodies to each other. Therefore, the manufacturing process is complicated, and the manufacturing costs are high. In addition, in the configuration disclosed in JP2013-80886A using the SOI substrate, the SOI substrate is expensive.
  • JP2013-80886A when the actuator is driven in a bending mode, there is a significant difference in thermal expansion coefficient between an underlying silicon layer functioning as a vibration plate and a piezoelectric film which is laminated on the silicon layer. Therefore, warping is likely to occur due to a temperature variation, and drive characteristics or a sensor output is likely to vary.
  • the underlying silicon layer functioning as a vibration plate is not provided in the configuration disclosed in JP2013-80886A, that is, if a laminated piezoelectric body which does not include a member functioning as a vibration plate is provided alone, the rigidity of a movable portion deteriorates. Therefore, the actuator cannot be used as a driving source of a device having a high resonance frequency.
  • the rigidity deteriorates. Therefore, when there is a difference in residual stress between two piezoelectric films or a difference in thickness between two piezoelectric films, a large amount of initial bending occurs.
  • a bimorph actuator is manufactured by adopting the configuration in which the underlying silicon layer functioning as a vibration plate is removed in the configuration disclosed in JP2013-80886A, only the thin electrode is present between the two piezoelectric films. Therefore, during a bending operation, a stress neutral surface (surface having a stress value of 0) is likely to be present in one of the piezoelectric films, and a variation in displacement increases.
  • the unimorph actuators of the related art have a limit in generative force.
  • the SOI substrate is more expensive than a typical silicon substrate (non-SOI substrate) not having an SOI structure. Therefore, when the SOI substrate is used, the costs are high.
  • the above-described problems can be recognized as problems common to various piezoelectric elements, for example, not only a device for an actuator but also a sensor device, a power generation device, or a combination thereof.
  • the present invention has been made in consideration of the above-described circumstances, and an object thereof is to provide a piezoelectric element having high stability which solves at least one of the above-described plural problems and operates with a high efficiency.
  • another object of the present invention is to provide a method for manufacturing a piezoelectric element in which the above-described piezoelectric element can be manufactured through a simple process.
  • a piezoelectric element comprising: a silicon substrate; a first electrode that is laminated on the silicon substrate; a first piezoelectric film that is laminated on the first electrode; a second electrode that is laminated on the first piezoelectric film; an adhesion layer that is laminated on the second electrode; an interlayer that is laminated on the adhesion layer, is formed of a material different from that of the second electrode, and has a thickness of 0.4 ⁇ m to 10 ⁇ m; a third electrode that is laminated on the interlayer; a second piezoelectric film that is laminated on the third electrode; and a fourth electrode that is laminated on the second piezoelectric film.
  • the first aspect necessary rigidity can be secured with the structure in which the first piezoelectric film and the second piezoelectric film are laminated with the interlayer interposed therebetween. Since the interlayer is laminated using the adhesion layer, a laminate structure having strong adhesion can be obtained. In addition, by adopting the structure in which the first piezoelectric film and the second piezoelectric film are laminated, a piezoelectric element having higher efficiency than that of a single-layer unimorph structure of the related art can be obtained.
  • the interlayer in a bending mode of being bent in a film thickness direction, the interlayer may be used as a vibration plate and may operate using displacements of the first piezoelectric film and the second piezoelectric film in a piezoelectric constant d31 direction.
  • An operation of the piezoelectric element may be a driving operation using an inverse piezoelectric effect or may be a detecting operation using a positive piezoelectric effect.
  • a stress neutral surface during the bending is present in the interlayer.
  • the stress neutral surface refers to a surface in which stress is 0, and is the center of stress. According to the third aspect, a balance of stress during an operation in the bending mode is not likely to deteriorate, and displacement characteristics are stable.
  • a material of the adhesion layer may be a transition metal element, a transition metal element oxide, or a combination of a transition metal element and a transition metal element oxide.
  • At least one element of Ti, Zr, Ni, Cr, W, Nb, and Mo is used.
  • a material of the interlayer may contain silicon.
  • Silicon (Si) has a lower thermal expansion coefficient than the piezoelectric material, and a good balance between the interlayer and the silicon substrate is obtained. Therefore, according to the fifth aspect, the second piezoelectric film is easily formed.
  • each of the first piezoelectric film and the second piezoelectric film has a thickness of 0.3 ⁇ m to 10 ⁇ m.
  • the first piezoelectric film and the second piezoelectric film may have the same crystal orientation.
  • characteristics of the first piezoelectric film are similar to characteristics of the second piezoelectric film. Therefore, it is easy to design driving conditions. In addition, when the first and second piezoelectric films are driven, a balance is good, and a device having high reliability can be obtained.
  • the first piezoelectric film and the second piezoelectric film may have a (100) orientation or a (001) orientation.
  • the piezoelectric element can be driven favorably in the bending mode.
  • a polarization direction of the first piezoelectric film and a polarization direction of the second piezoelectric film may be the same.
  • the ninth aspect it is convenient to design a circuit for driving or detecting.
  • each of a residual stress of the first piezoelectric film and a residual stress of the second piezoelectric film is 200 MPa or lower in terms of an absolute value.
  • the absolute value of the residual stress is 200 MPa or lower from the viewpoint of suppressing peeling or cracking of the film.
  • the piezoelectric element can be efficiently used for driving or sensing.
  • a thermal expansion coefficient of the interlayer is two times or less than thermal expansion coefficients of the first piezoelectric film and the second piezoelectric film.
  • a thickness of the second piezoelectric film is 0.5 times to 2 times a thickness of the first piezoelectric film.
  • a balance of stress between the first piezoelectric film and the second piezoelectric film between which the interlayer is interposed is good. Therefore, initial warping caused by residual stress can be suppressed.
  • each of the first electrode, the first piezoelectric film, the second electrode, the interlayer, the adhesion layer, the third electrode, the second piezoelectric film, and the fourth electrode is formed using a thin film formation method.
  • a film having high adhesion and high film thickness uniformity can be formed, and a piezoelectric element having a small variation in performance can be obtained.
  • the thin film formation method may be a vapor phase epitaxial method.
  • a piezoelectric element having high film thickness uniformity can be obtained at a relatively low cost.
  • a method for manufacturing a piezoelectric element comprising: a first electrode formation step of forming a first electrode on a silicon substrate; a first piezoelectric film formation step of forming a first piezoelectric film on the first electrode; a second electrode formation step of forming a second electrode on the first piezoelectric film; an adhesion layer formation step of forming an adhesion layer on the second electrode; an interlayer formation step of forming an interlayer on the adhesion layer the interlayer being formed of a material different from that of the second electrode and having a thickness of 0.4 ⁇ m to 10 ⁇ m; a third electrode formation step of forming a third electrode on the interlayer; a second piezoelectric film formation step of forming a second piezoelectric film on the third electrode; a fourth electrode formation step of forming a fourth electrode on the second piezoelectric film; and a removal step of removing a part of the silicon substrate by etching, in which each
  • a piezoelectric element which operates with high efficiency can be manufactured through a simple process.
  • features specified in the second to fourteenth aspects can be appropriately combined with each other.
  • a piezoelectric element having high stability which operates with high efficiency can be provided.
  • a piezoelectric element having high stability which operates with high efficiency can be manufactured through a simple process.
  • FIG. 1 is a cross-sectional view showing a configuration example of a piezoelectric element according to an embodiment of the present invention.
  • FIG. 2 is a schematic diagram showing a laminate structure of the piezoelectric element according to the embodiment.
  • FIGS. 3A to 3F are diagrams showing a manufacturing process of the piezoelectric element.
  • FIGS. 4A to 4C are diagrams showing the manufacturing process of the piezoelectric element.
  • FIG. 5 is a scanning electron microscope image showing a configuration of a laminate prepared as an example according to the embodiment.
  • FIG. 6 is a graph showing the results of X-ray diffraction analysis of the laminate ( FIG. 5 ) prepared as the example according to the embodiment.
  • FIG. 7 is a cross-sectional view schematically showing a device structure which was used in an evaluation experiment of a device.
  • FIG. 8 is a diagram showing an example of a method for applying a drive voltage.
  • FIG. 9 is a table collectively showing the results of the evaluation experiment of a device.
  • FIG. 10 is a table collectively showing the results of the evaluation experiment of a device.
  • FIG. 11 is a diagram showing a relationship between a thickness (t 1 ) of a first piezoelectric film, a thickness (t 2 ) of a second piezoelectric film, and a necessary thickness (t v ) of a vibration plate.
  • FIG. 13 is a graph showing an example of a waveform of a drive voltage.
  • FIG. 1 is a cross-sectional view showing a configuration example of a piezoelectric element according to an embodiment of the present invention.
  • An piezoelectric element 10 according to the embodiment is a micro electro mechanical system (MEMS) device having a laminate structure in which a first electrode 14 is laminated on a silicon (Si) substrate 12 and in which a first piezoelectric film 16 , a second electrode 18 , an adhesion layer 20 , an interlayer 22 , a third electrode 24 , a second piezoelectric film 26 , and a fourth electrode 28 are laminated in this order on the first electrode 14 .
  • the interlayer 22 is formed of a material different from that of the second electrode 18 and functions as a vibration plate.
  • the interlayer 22 has a thickness of 0.4 ⁇ m to 10 ⁇ m.
  • a portion of the silicon substrate 12 is removed, and the removed portion forms a concave portion 32 .
  • the piezoelectric element 10 has a diaphragm structure in which a laminate 34 functions as a movable portion which is bendable in a film thickness direction (vertical direction of FIG. 1 ) at a position corresponding to an open region A of the concave portion 32 of the silicon substrate 12 , the laminate 34 including the first electrode 14 , the first piezoelectric film 16 , the second electrode 18 , the adhesion layer 20 , the interlayer 22 , the third electrode 24 , the second piezoelectric film 26 , and the fourth electrode 28 .
  • the silicon substrate 12 functions as a support that supports the laminate 34 including the first electrode 14 , the first piezoelectric film 16 , the second electrode 18 , the adhesion layer 20 , the interlayer 22 , the third electrode 24 , the second piezoelectric film 26 , and the fourth electrode 28 . That is, the silicon substrate 12 functions as a fixing portion that fixes an edge of the movable portion corresponding to the open region A of the concave portion 32 .
  • the interlayer 22 in a bending mode of being bent in a film thickness direction, the interlayer 22 is used as a vibration plate and operates using displacements of the first piezoelectric film 16 and the second piezoelectric film 26 in a piezoelectric constant d31 direction.
  • each layer shown in FIG. 1 and other drawings are appropriately changed for convenience of description and do not necessarily reflect the actual thickness and proportion thereof.
  • a direction away from a surface of the silicon substrate 12 to a substrate thickness direction will be described as “upward”.
  • FIG. 1 in a state where the silicon substrate 12 is horizontally kept, the first electrode 14 and the other layers ( 14 to 28 ) are laminated in this order on an upper surface of the silicon substrate 12 . Therefore, a vertical relationship in FIG. 1 matches with a vertical relationship when a gravity direction (downward in FIG. 1 ) is set as a downward direction.
  • the posture of the silicon substrate 12 may be inclined or reversed.
  • FIG. 2 is a schematic diagram showing the laminate structure of the piezoelectric element 10 .
  • the silicon substrate 12 which is the bottom layer, a silicon wafer (a non-SOI substrate not having a SOI structure) as a standard commercially available product is used.
  • Each of the layers ( 14 to 28 ) is formed on the silicon substrate 12 using a thin film formation method.
  • the thin film formation method include a physical vapor deposition (PVD) method, a chemical vapor deposition (CVD) method, a liquid phase film formation method (for example, plating, coating, a sol-gel method, or a spin coating method), and a thermal oxidation method.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • a liquid phase film formation method for example, plating, coating, a sol-gel method, or a spin coating method
  • thermal oxidation method for example, plating, coating, a sol-gel method, or a spin coating method
  • An appropriate film formation method can be selected for each layer, but it is most preferable that all the layers are formed using a vapor phase epitaxial method.
  • the thickness can be controlled with high accuracy.
  • a material is inexpensive, a film formation rate is high, and mass productivity is high. Therefore, the costs of a device can
  • the first electrode 14 has a configuration in which, using a vapor phase epitaxial method represented by a sputtering method, a Ti layer 14 A is formed in contact with the silicon substrate 12 , and an Ir layer 14 B is formed on the Ti layer 14 A.
  • a material constituting the first electrode 14 in addition to the above-described examples, a material such as platinum (Pt), aluminum (Al), molybdenum (Mo), titanium nitride (TIN), ruthenium (Ru), gold (Au), or silver (Ag) can be used.
  • the adhesion layer may be formed of TiW instead of Ti.
  • the thickness of the first electrode 14 can be designed to be an appropriate thickness but is preferably in a range of substantially several tens of nanometers to several hundreds of nanometers.
  • the thickness of the first electrode 14 is in a range of 50 nm to 300 nm.
  • the first piezoelectric film 16 is formed with a method for increasing the substrate temperature (to preferably 400° C. or higher) to cause crystallization during the film formation using a vapor phase epitaxial method represented by a sputtering method.
  • a material is not particularly limited.
  • the thickness of the first piezoelectric film 16 is preferably 0.3 ⁇ m to 10 ⁇ m. When the thickness of the first piezoelectric film 16 is less than 0.3 ⁇ m, sufficient driving power for an actuator cannot be exhibited. In addition, there is a concern that it is difficult to extract a sufficient voltage signal for a sensor or a power generation device.
  • the first piezoelectric film 16 when the first piezoelectric film 16 is excessively thin, the first piezoelectric film 16 may be broken by a leakage current. Further, when the first piezoelectric film 16 is excessively thin, the crystallinity of the piezoelectric body deteriorates, and there may be a problem that necessary piezoelectric performance cannot be obtained. On the other hand, when the thickness of the first piezoelectric film 16 is more than 10 ⁇ m, cracking or peeling is likely to occur. Therefore, it is difficult to form the first piezoelectric film 16 using a vapor phase epitaxial method.
  • the thickness of the first piezoelectric film 16 is preferably 0.3 ⁇ m to 10 ⁇ m, more preferably 0.5 ⁇ m to 8 ⁇ m, and still more preferably 1 ⁇ m to 7 ⁇ m.
  • an Ir oxide As a material of the second electrode 18 , for example, an Ir oxide is used. In this specification, an Ir oxide is represented by “IrOx”. x represents an arbitrary number representing a composition ratio.
  • the material of the second electrode 18 is not limited to IrOx, and other conductive materials can be used.
  • the second electrode 18 functions as a diffusion blocking layer which blocks a diffusion reaction of an oxygen atom or a piezoelectric material component from the first piezoelectric film 16 .
  • the adhesion layer 20 is laminated on the second electrode 18 .
  • a transition metal element a transition metal element oxide, or a combination thereof is preferable.
  • Ti, Zr, Ni, Cr, W, Nb, Mo, or an oxide thereof is preferable.
  • the adhesion layer 20 is formed of Ti.
  • a silicon (Si) layer as the interlayer 22 is laminated. It is preferable that the interlayer 22 is formed of a material containing silicon (Si) as a major component. “Containing as a major component” represents that a material is contained in an amount of 50 mass % or higher. Si has a lower thermal expansion coefficient than the piezoelectric material, and the substrate as the bottom layer (as the underlayer) is the silicon substrate 12 . Therefore, when the interlayer 22 is formed of a material containing Si as a major component, the film thickness can be easily made thin. That is, by forming the interlayer 22 formed of Si after the formation of the first piezoelectric film 16 , a good balance with the underlying Si can be obtained. Therefore, the second piezoelectric film 26 can be easily formed.
  • the interlayer 22 is directly formed on the second electrode 18 without providing the adhesion layer 20 , peeling is likely to occur during the formation of the interlayer 22 or the second piezoelectric film 26 . Therefore, even in a case where peeling does not occur in a standstill state, for example, long-term driving causes peeling, and thus durability deteriorates. Therefore, it is preferable that the interlayer 22 is formed on the second electrode 18 with the adhesion layer 20 interposed therebetween.
  • electrical characteristics thereof are not particularly limited.
  • the interlayer 22 is formed using a vapor phase epitaxial method.
  • the interlayer 22 is formed using a vapor phase epitaxial method, the piezoelectric element 10 having high adhesion and high film thickness uniformity can be continuously manufactured.
  • the interlayer 22 may be formed using a method other than a vapor phase epitaxial method.
  • a method for bonding and polishing a material when adopted, the thickness accuracy of polishing is insufficient as compared to the thickness accuracy of the vapor phase epitaxial method, which causes a variation in element performance (characteristics).
  • a method such as a sol-gel method or a screen plating method when adopted, a heat treatment (firing treatment) at a high temperature is necessary to fire the interlayer, which causes cracking of the piezoelectric films or causes stress due to a difference in thermal expansion coefficient. Accordingly, during the formation of the interlayer 22 , it is preferable that a vapor phase epitaxial method is adopted from the viewpoint of avoiding the above-described concern.
  • the third electrode 24 formed on the interlayer 22 has a configuration of a laminated film in which a Ti layer 24 A and an Ir layer 24 B are laminated.
  • a material constituting the third electrode 24 the same material as that of the first electrode 14 can be used.
  • the first electrode 14 and the third electrode 24 may be formed of the same material or different materials.
  • the second piezoelectric film 26 is formed with a method for increasing the substrate temperature (to preferably 400° C. or higher) to cause crystallization during the film formation using a vapor phase epitaxial method.
  • the thickness of the second piezoelectric film 26 is preferably 0.3 ⁇ m to 10 ⁇ m, more preferably 0.5 ⁇ m to 8 ⁇ m, and still more preferably 1 ⁇ m to 7 ⁇ m.
  • the first piezoelectric film 16 and the second piezoelectric film 26 may have the same thickness or different thicknesses.
  • the same material as that of the first piezoelectric film 16 is preferably used, but a material different from that of the first piezoelectric film 16 may be used.
  • the fourth electrode 28 formed on the second piezoelectric film 26 various materials can be used as in the case of the first electrode 14 .
  • the fourth electrode 28 according to this example has a configuration in which a Pt layer 28 B is laminated on a Ti layer 28 A.
  • a TiW layer may be used instead of the Ti layer 28 A.
  • FIGS. 3A to 4C are diagrams showing a manufacturing process of a piezoelectric element of an example according to the embodiment.
  • substrate preparation step corresponding to FIG. 3A .
  • a silicon wafer having a non-SOI structure is used as an example.
  • a SiO 2 film oxide film may be formed on a surface of the silicon wafer.
  • the first electrode 14 is formed on a single surface (upper surface in FIG. 3B ) of the silicon substrate 12 (first electrode formation step).
  • first electrode formation step in order to form the first electrode 14 , using a sputtering method, the Ti layer 14 A having a thickness of 20 nm is formed, and the Ir layer 14 B having a thickness of 150 nm is formed on the Ti layer 14 A.
  • the substrate temperature is set as 350° C.
  • the first electrode 14 which is a laminated film of Ir (150 nm)/Ti (20 nm) functions as “first lower electrode”.
  • the first piezoelectric film 16 is formed on the first electrode 14 (“first piezoelectric film formation step”).
  • the substrate temperature is set to about 500° C. (for example, 480° C.), and a PZT film having a thickness of 2.5 ⁇ m which is doped with 13% (atomic composition ratio) of Nb is formed using a sputtering method.
  • Nb-doped PZT PNZT
  • PZT Nb-doped PZT
  • a high-frequency magnetron sputtering device is used.
  • film formation gas mixed gas containing 97.5% of Ar and 2.5% of O 2 is used.
  • a target material a material having a composition of Pb 1.3 ((Zr 0.52 Ti 0.48 ) 0.88 Nb 0.12 )O 3 is used.
  • the film formation pressure is set to 2.2 mTorr (0.293 Pa).
  • the second electrode 18 is formed on the first piezoelectric film 16 (“second electrode formation step”).
  • the second electrode 18 any one of an oxide electrode and a non-oxide electrode may be used. However, from the viewpoints of adhesion and durability, an oxide electrode is preferable. In particular, it is preferable that the second electrode 18 is stable to the film formation temperature of the second piezoelectric film 26 .
  • an oxide electrode for example, ITO or IrOx is preferable.
  • an IrOx film having a thickness of 200 nm is formed on the first piezoelectric film 16 using a sputtering method at a film formation temperature of 350° C.
  • the second electrode 18 which is the IrOx film (200 nm) functions as “first upper electrode”.
  • the adhesion layer 20 is formed on the second electrode 18 (“adhesion layer formation step”).
  • a Ti layer having a thickness of 20 nm is formed as the adhesion layer 20 .
  • the interlayer 22 functioning as a vibration plate is formed on the adhesion layer 20 (“interlayer formation step”).
  • a silicon film having a thickness of 3 ⁇ m is formed as the interlayer 22 using a sputtering method.
  • the film formation method is not limited to a sputtering method and may be CVD or laser ablation.
  • the Si film constituting the interlayer 22 is a columnar structure.
  • the columnar structure is efficiently displaced in response to a displacement in the bending mode of being bent in the film thickness direction.
  • the interlayer 22 contains an amorphous component.
  • an amorphous component is present in the Si film, there is an advantageous effect of strong resistance to impact such as cracking.
  • the film thickness uniformity of the interlayer 22 it is preferable that a variation in the in-plane thickness of, for example, a 6-inch wafer is 10% or lower. It is preferable that the film thickness is uniform from the viewpoint of reducing a variation in device performance. According to the film thickness accuracy of the vapor phase epitaxial method, desired uniformity can be secured.
  • a method for bonding a material through an adhesive or a method for adjusting the thickness by polishing is used during the preparation of the laminate structure, it is difficult to achieve desired thickness uniformity in many cases.
  • a direct film formation method such as a vapor phase epitaxial method or a sol-gel method is used, a thin film can be formed with high thickness accuracy satisfying desired film thickness uniformity.
  • the thickness of the interlayer 22 is preferably 0.4 ⁇ m to 10 ⁇ m. The reason for this is as follows. Since the center of stress (stress neutral surface) generated during the displacement in the bending mode is positioned in the interlayer 22 which is a non-driven portion, the efficiency of the displacement is improved.
  • the third electrode 24 is formed on the Si film which is the interlayer 22 (“third electrode formation step”).
  • the Ti layer 24 A having a thickness of 20 nm is formed, and the Ir layer 24 B having a thickness of 150 nm is formed on the Ti layer 24 A.
  • the substrate temperature is set as 350° C.
  • the third electrode 24 which is a laminated film of Ir (150 nm)/Ti (20 nm) functions as “second lower electrode”.
  • the second piezoelectric film 26 is formed on the third electrode 24 (“second piezoelectric film formation step”).
  • the substrate temperature is set to about 500° C. (for example, 480° C.), and a PZT film having a thickness of 3.0 ⁇ m which is doped with 13% (atomic composition ratio) of Nb is formed using a sputtering method. Film formation conditions are the same as those of the first piezoelectric film 16 .
  • FIG. 5 is a scanning electron microscope (SEM) image showing a cross-section of a film configuration of the laminate in a state where the second piezoelectric film 26 is formed through Step 8.
  • SEM scanning electron microscope
  • the fourth electrode 28 is formed on the second piezoelectric film 26 (“fourth electrode formation step”).
  • the Ti layer 28 A having a thickness of 20 nm is formed, and the Pt layer 28 B having a thickness of 150 nm is formed on the Ti layer 28 A.
  • the substrate temperature is set to room temperature.
  • the fourth electrode 28 which is a laminated film of Pt (150 nm)/Ti (20 nm) functions as “second upper electrode”.
  • the fourth electrode 28 may be patterned in combination with a lift-off method.
  • a third piezoelectric film may be laminated on the fourth electrode 28 . If a step of laminating the third piezoelectric film on the fourth electrode 28 is not provided, the fourth electrode 28 can be formed at room temperature. Further, as the fourth electrode 28 , any one of an oxide electrode and a non-oxide electrode may be used.
  • the laminate structure obtained as described above is patterned in a desired device shape through dry etching (“device patterning step”).
  • a part of the silicon substrate 12 is removed by deep-drilling Si from a back surface side of the silicon substrate 12 , and a diaphragm structure (refer to FIG. 1 ) is formed (“removal step”).
  • the Si deep-drilling technique is a microfabrication technique using reactive ion etching (RIE) and is called deep RIE.
  • RIE reactive ion etching
  • a stop layer for stopping etching may be provided in the silicon substrate 12 in advance.
  • a SiO 2 film may be formed on a surface of a silicon wafer as a substrate, and this SiO 2 film may be used as a stop layer for stopping etching.
  • Etching may be dry etching or wet etching. A well-known etching technique may be applied.
  • a part of the silicon substrate 12 may be removed to form a cantilever structure.
  • the pressure and temperature may be returned to the atmospheric pressure and room temperature, or film formation may be continuously performed.
  • a patterning step may be performed. Film formation using a material other than PZT may be performed at room temperature. However, from the viewpoint of durability, it is preferable that the material other than PZT to form a film because stress applied to PZT can be reduced.
  • FIG. 6 shows the results of X-ray diffraction (XRD) analysis of the laminate ( FIG. 5 ), which includes the two piezoelectric films, prepared as the example according to the embodiment.
  • the horizontal axis represents a reflection angle 20
  • the vertical axis represents a diffraction intensity.
  • the unit of the diffraction intensity of the vertical axis is cps (count per second).
  • reference numeral 61 represents the XRD measurement result of the first piezoelectric film 16 (refer to FIG. 1 ) which is the first layer
  • reference numeral 62 in FIG. 6 represents the XRD measurement result of the second piezoelectric film 26 (refer to FIG. 2 ) which is the second layer.
  • the first piezoelectric film 16 prepared in this example has a (100) orientation or a (001) orientation
  • the second piezoelectric film 26 formed and laminated on the first piezoelectric film also has a (100) orientation or a (001) orientation. That is, the first piezoelectric film 16 and the second piezoelectric film 26 are highly oriented piezoelectric films having crystal orientation.
  • the piezoelectric performance of a piezoelectric body in a bending mode that is, a piezoelectric constant d31 (pm/V) thereof varies depending on the crystal orientation of the piezoelectric body.
  • a piezoelectric constant d31 d31 (pm/V) thereof
  • these piezoelectric films can be handled under the same driving conditions, and a shift of a stress neutral surface can be suppressed. Therefore, it is preferable that the first piezoelectric film 16 and the second piezoelectric film 26 have the same crystal orientation.
  • the two piezoelectric films ( 16 , 26 ) can be made to have the same orientation.
  • a driving design is simple, and the piezoelectric films can be driven favorably.
  • the amount of strains generated during long-term driving is small, and a device having high reliability can be realized.
  • the two piezoelectric films shows a (100) orientation but may have a (001) orientation.
  • Residual stress values of the piezoelectric films ( 16 , 26 ) prepared in the example of the embodiment are about “+150 MPa” in terms of tensile stress when measured based on the results of measuring the amount of warpage.
  • a piezoelectric film is formed under different film formation conditions. When the stress value is higher than “+200 MPa”, cracking and peeling occur in the piezoelectric film during the film formation process. Based on the above experimental finding, it is preferable that stress of each of the piezoelectric films ( 16 , 26 ) is 200 MPa or lower in terms of an absolute value.
  • the center of stress (stress neutral surface) generated during driving in the bending mode is present in the interlayer 22 (refer to FIG. 1 ). If the center of stress is shifted from the interlayer 22 and is present in the first piezoelectric film 16 or the second piezoelectric film 26 , a balance of stress generated during driving significantly deteriorates, and there is a concern that displacement characteristics may significantly change.
  • the stress neutral surface is shifted from the interlayer and is present in one of the piezoelectric films.
  • different voltage values may be applied to the upper and lower piezoelectric films so as not to be higher than a coercive electric field of the piezoelectric material. In this case, the stress neutral surface is shifted from the center of the interlayer to a larger degree as compared to a case where the same voltage value is applied to the upper and lower piezoelectric films.
  • the thickness of the interlayer 22 has an appropriate thickness such that the stress neutral surface is present in the interlayer 22 . It is preferable that the thickness of the interlayer 22 is at least 0.3 ⁇ m. It is more preferable that the thickness of the interlayer 22 is 2.0 ⁇ m or more.
  • the upper limit of the thickness of the interlayer 22 is not particularly limited. However, it is considered that a range where the interlayer 22 can be favorably formed using a direct film formation method such as a vapor phase epitaxial method is limited to about 10 ⁇ m. In this example, the thickness of the interlayer 22 is 3 ⁇ m.
  • the thermal expansion coefficient of the piezoelectric material is about 6 ppm/° C. to 8 ppm/° C.
  • the thermal expansion coefficient of silicon is about 2.4 ppm/° C.
  • the center of a stress change generated by a difference in thermal expansion coefficient between the piezoelectric material and the interlayer 22 is present in the interlayer 22 .
  • the thermal expansion coefficient of the interlayer 22 is preferably equal to or lower than a thermal expansion coefficient, which is two times that of the piezoelectric material, and is more preferably lower than that of the piezoelectric material.
  • silicon (Si) having a lower thermal expansion coefficient than the piezoelectric material (PZT) is used as a material of the interlayer 22 .
  • the polarization directions of the first piezoelectric film 16 and the second piezoelectric film 26 are investigated.
  • the polarization direction of the first piezoelectric film 16 is a direction away from the first electrode 14 to the second electrode 18
  • the polarization direction of the second piezoelectric film 26 is a direction away from the third electrode 24 to the fourth electrode 28 .
  • the polarization directions are set as follows. When the first electrode 14 is set as a ground potential, the polarization direction of the first piezoelectric film 16 is set such that a negative potential is applied to the second electrode 18 . When the third electrode is set as a ground potential, the polarization direction of the second piezoelectric film 26 is set such that a negative potential is applied to the fourth electrode.
  • the piezoelectric film contracts in a plane direction due to a piezoelectric transverse effect (d31 mode).
  • the interlayer 22 functioning as a vibration plate restricts the deformation of the piezoelectric film. Therefore, the vibration plate is bent in the thickness direction.
  • a positive potential or a negative potential may be selected.
  • a driving direction in FIG. 1 , whether the vibration plate is bent in a direction so as to be upwardly convex or downwardly convex can be determined based on a relationship between the polarization direction of the piezoelectric body and the vibration plate which is the interlayer 22 .
  • a phase of a voltage applied to the first piezoelectric film 16 and a phase of a voltage applied to the second piezoelectric film 26 may change.
  • a driving method can be freely selected according to the use/purpose of the device. For example, in a case where the first piezoelectric film 16 and the second piezoelectric film 26 are driven after shifting phases thereof, a displacement, which is effectively about two times a displacement in a case where only one of the piezoelectric films is driven, can be realized.
  • a part of the electrodes can be used for sensing. For example, in the piezoelectric element 10 shown in FIG.
  • the first piezoelectric film 16 can be used for detecting (sensing), and the second piezoelectric film 26 can be used as for driving (actuator). That is, a first element portion having a configuration in which the first piezoelectric film 16 is interposed between the first electrode 14 and the second electrode 18 functions as a sensor portion which converts a displacement of the first piezoelectric film 16 into an electric signal using a positive piezoelectric effect. In addition, a second element portion having a configuration in which the second piezoelectric film 26 is interposed between the third electrode 24 and the fourth electrode 28 functions as a driver portion which converts a drive voltage into a displacement of the second piezoelectric film 26 using an inverse piezoelectric effect.
  • a voltage generated by strains when the second piezoelectric film 26 is driven can be sensed by the first piezoelectric film 16 .
  • the displacement can be determined from the detected voltage information with reference to correlation data.
  • a unimorph actuator of the related art it is necessary that separately arrange a piezoelectric portion which functions as a sensor portion and a piezoelectric portion which functions as a driver portion in a plane.
  • the limited device area is divided into a portion functioning as a sensor portion and a portion functioning as a driver portion to secure regions for the two portions. Therefore, due to the limited area, it is necessary to sacrifice the efficiency of one of the two portions to some extent.
  • a driving electrode used as a driver portion and a detecting electrode used as a sensor portion can be appropriately arranged.
  • the piezoelectric element 10 is not limited to the configuration of being used as an actuator or a sensor and may be used as a power generation device which converts a displacement of the piezoelectric film into electrical energy.
  • FIG. 7 is a cross-sectional view schematically showing a cantilever structure which was used in an evaluation experiment.
  • FIG. 7 schematically shows a laminate structure, but an actual laminate structure is as shown in FIG. 2 .
  • the same components as those shown in FIG. 2 are represented by the same reference numerals.
  • a left end portion supported by the silicon substrate 12 functions as a fixing portion.
  • Devices having various dimensions were prepared, in which t 1 represents the thickness of the first piezoelectric film 16 , t 2 represents the thickness of the second piezoelectric film 26 , and t v represents the thickness of a portion interposed therebetween, that is, the total thickness of the interlayer 22 , the second electrode 18 , and the third electrode 24 .
  • the thicknesses of the second electrode 18 and the third electrode 24 can be sufficiently reduced relative to the thickness of the interlayer 22 . Therefore, t v can be substantially considered as the thickness of the interlayer 22 .
  • t v represents the thickness of the interlayer 22 functioning as a vibration plate.
  • a static displacement obtained when a drive voltage was applied and a variation in a displacement obtained when a sine wave drive voltage was continuously applied were evaluated.
  • the second electrode 18 and the third electrode 24 were set as ground potentials (GND)
  • V 1 represents a drive voltage applied to the first electrode 14
  • V 2 represents a drive voltage applied to the fourth electrode 28 .
  • FIG. 9 is a table collectively showing the evaluation results of each of the prepared device samples.
  • the unit of t 1 , t 2 , and t v is micrometer ( ⁇ m).
  • “AA” represents an extremely favorable device containing substantially no variation in the displacement.
  • “A” represents a favorable device having a small variation in the displacement which is allowable in practice.
  • “C” represents a device having a large variation in the displacement.
  • a structure having two piezoelectric films shows a higher displacement than a structure having only one piezoelectric film.
  • the thickness t v corresponding to the interlayer is 0.3 ⁇ m or less, the variation in the displacement is large.
  • t v is more than 0.3 ⁇ m, the variation in the displacement is improved.
  • t v is preferably 0.4 ⁇ m or more and more preferably 0.5 ⁇ m or more.
  • FIG. 10 shows the results of evaluating warping caused by residual stress.
  • the unit of t 1 , t 2 , and t v is micrometer ( ⁇ m).
  • “A” represents a favorable device having substantially no warping
  • “C” represents a device having warping.
  • the thickness of the second piezoelectric film is 0.5 times to 2 times the thickness of the first piezoelectric film.
  • warping may occur in the device depending on the usage environment.
  • the main reason why warping occurs is a difference between the thermal expansion coefficients of the piezoelectric material used in the piezoelectric films ( 16 , 26 ) and the material of the interlayer 22 .
  • a ratio of the thickness of the second piezoelectric film 26 to the thickness of the first piezoelectric film 16 is in a range of 0.5 to 2 because a good balance is obtained by the two piezoelectric films ( 16 , 26 ) between which the interlayer 22 is interposed, and the amount of warpage is relatively small.
  • the evaluation of warping is “C”, which may be allowable depending on the use of the device.
  • E p represents a Young's modulus of a piezoelectric body
  • E v represents a Young's modulus of the interlayer
  • the position x of the stress neutral surface is expressed by the shift amount from the center t v /2 of t v .
  • FIG. 11 is a diagram showing Expressions 2 and 3.
  • the unit of each axis is micrometer ( ⁇ m).
  • a piezoelectric film having a thickness of about 3 ⁇ m is formed using a film formation method such as a vapor phase epitaxial method, it is presumed that a variation in thickness is generally about ⁇ 10%.
  • a variation in thickness was ⁇ 13% ( ⁇ 0.4 ⁇ m).
  • the thickness of the interlayer necessary for making the stress neutral surface present in the interlayer 22 is 0.4 ⁇ m or more (refer to FIG. 12 ).
  • a waveform containing an offset voltage (direct current voltage component) Vc shown in FIG. 13 may be applied such that polarization reversal does not occur in the piezoelectric body depending on the applied voltage.
  • Vc a voltage value is selected so as not to be higher than a coercive electric field of the piezoelectric body.
  • a balance of generative force between the first piezoelectric film 16 and the second piezoelectric film 26 deteriorates, and thus the position of the stress neutral surface changes during driving.
  • a balance of generative force between the first piezoelectric film 16 and the second piezoelectric film 26 varies, for example, at points A and B in FIG. 13 . Therefore, in order to make the stress neutral surface always present in the interlayer 22 and to stabilize a driving displacement, the thickness of the interlayer 22 having a sufficient allowance for the change is necessary.
  • t v is preferably 2 ⁇ m or more.
  • the piezoelectric material according to the embodiment include a material containing one kind or two or more kinds of perovskite type oxides (Formula P).
  • A represents an A-site element which is at least one element containing Pb.
  • B represents a B-site element which is at least one element selected from the group consisting of Ti, Zr, V, Nb, Ta, Sb, Cr, Mo, W, Mn, Sc, Co, Cu, In, Sn, Ga, Zn, Cd, Fe, and Ni.
  • O represents oxygen.
  • a standard molar ratio of the A-site element, the B-site element, and oxygen is 1:1:3.
  • the molar ratio may deviate from the standard molar ratio in a range where a perovskite structure can be adopted.
  • Examples of the perovskite type oxide represented by the above formula include a lead-containing compound such as lead titanate, lead zirconate titanate (PZT), lead zirconate, lead lanthanum titanate, lead lanthanum zirconate titanate, lead magnesium niobate-lead zirconate titanate, lead nickel niobate-lead zirconate titanate, or lead zinc niobate-lead zirconate titanate, and a mixed crystal system thereof; and a lead non-containing compound such as barium titanate, strontium barium titanate, bismuth sodium titanate, bismuth potassium titanate, sodium niobate, potassium niobate, lithium niobate, or bismuth ferrite, and a mixed crystal system thereof.
  • a lead-containing compound such as lead titanate, lead zirconate titanate (PZT), lead zirconate, lead lanthanum titanate, lead lanthanum
  • the piezoelectric film according to the embodiment contains one perovskite type oxide (PX) or two or more perovskite type oxides (PX) represented by the following formula.
  • A represents an A-site element which is at least one element containing Pb.
  • M represents at least one element selected from the group consisting of V, Nb, Ta, and Sb.
  • the molar ratio may deviate from the standard molar ratio in a range where a perovskite structure can be adopted.
  • the perovskite type oxide (PX) is pure PZT or an oxide obtained by substituting or a portion of the B-site element in PZT with M. It is known that, in PZT to which various donor ions having a higher valence than substituted ions are added, characteristics such as piezoelectric performance are improved to be higher than those of pure PZT. It is preferable that M represents one kind or two or more kinds of donor ions having a higher valence than tetravalent Zr or Ti ions. Examples of the donor ions include V 5+ , Nb 5+ , Ta 5+ , Sb 5+ , Mo 6+ , and W 6+ .
  • b-x-y is not particularly limited within a range where a perovskite structure can be adopted.
  • M represents Nb
  • a molar ratio of Nb/(Zr+Ti+Nb) is preferably 0.05 to 0.25 and more preferably 0.06 to 0.20.
  • a piezoelectric film which is formed of the perovskite type oxide represented by Formula (P) or (PX) described above has a high piezoelectric constant (d31 constant). Therefore, a piezoelectric element including the piezoelectric film is superior in displacement characteristics and detection characteristics.
  • the Pb-based piezoelectric material has been described. However, in the practice of the present invention, a non-lead perovskite type piezoelectric material can also be suitably used.
  • a vapor phase epitaxial method is preferable.
  • various methods such as a sputtering method, an ion plating method, a metal organic chemical vapor deposition (MOCVD) method, or a pulsed laser deposition (PLD) method can be used.
  • a method other than a vapor phase epitaxial method for example, a sol-gel method may be used.
  • the manufacturing process can be simplified.
  • microfabrication can be easily performed on the piezoelectric film formed as described above, and the piezoelectric film can be patterned into a desired shape.
  • the yield can be significantly improved, and further reduction in the size of the device can be handled.
  • the electrode material, the piezoelectric material, the respective thicknesses of the layers, film formation conditions, and the like can be selected according to the purpose.
  • Si is used as the material of the interlayer 22 .
  • a material obtained by adding Ni to Si was used to form the interlayer 22 having the same structure as shown in FIG. 1 using a sputtering method.
  • the addition amount of Ni is lower than 50% by mass.
  • the thermal expansion coefficient of the Si—Ni material ranges between the thermal expansion coefficient of Si (2.4 ppm/° C.) and the thermal expansion coefficient of Ni (12.8 ppm/° C.).
  • the interlayer 22 which is formed of the material containing Si as a major component and further containing Ni is conductive and can function as a common electrode for the first piezoelectric film 16 and the second piezoelectric film 26 .
  • a metal element other than Ni may be added or a combination of plural kinds of metal elements may be added to Si.
  • FIG. 1 shows the structure in which the two piezoelectric films ( 16 , 26 ) are laminated with the interlayer 22 interposed therebetween.
  • a configuration may be adopted in which three or more piezoelectric films are laminated by further laminating a piezoelectric film on the fourth electrode 28 .
  • either or both of the first piezoelectric film 16 and the second piezoelectric film can operate using a positive piezoelectric effect.
  • either or both of the first piezoelectric film 16 and the second piezoelectric film can operate using an inverse piezoelectric effect.
  • a portion using a positive piezoelectric effect and a portion using an inverse piezoelectric effect can be combined with each other.
  • the drive voltage applied to the first piezoelectric film 16 and the drive voltage applied to the second piezoelectric film 26 are alternative current and can have driving waveforms having different phases.
  • the piezoelectric element can be applied to various devices having a suitable structure such as an ink jet device, a high-frequency switch, a micromirror, a power generation device, a speaker, a vibrator, a pump, or an ultrasonic probe.
  • a suitable structure such as an ink jet device, a high-frequency switch, a micromirror, a power generation device, a speaker, a vibrator, a pump, or an ultrasonic probe.
  • the effective performance of the piezoelectric element can be improved as compared to a case where only one (single) piezoelectric film is provided.
  • the drive voltage required to obtain a displacement equivalent to that of the configuration where only one (single) piezoelectric film is provided can be reduced to about 1 ⁇ 2.
  • the piezoelectric element 10 according to the embodiment is used as an actuator, a large displacement can be obtained by applying a relatively low drive voltage.
  • a load on a control circuit including a drive circuit is reduced by a decrease in the drive voltage, and cost reduction, power saving, improvement of durability, and the like can be realized.
  • the piezoelectric element 10 according to the embodiment is used as a sensor, a high voltage signal can be obtained by the piezoelectric films being deformed, and the sensitivity can be improved.
  • the piezoelectric element 10 according to the embodiment is used as a power generation device, the power generation voltage can increase by the piezoelectric films being laminated, and the same effect as that of a device whose area is increased in a planar way can be obtained. As a result, a small device having high power generation efficiency can be realized, practically suitable power generation performance can be realized.
  • the thickness of the interlayer 22 By setting the thickness of the interlayer 22 to be 0.4 ⁇ m or more and more preferably 2.0 ⁇ m or more, the stress neutral surface during bending can be made to be present in the interlayer 22 , and the stability of displacement can be improved.
  • the piezoelectric element 10 can be used as a driving source of a device having a high resonance frequency. Further, even when the first piezoelectric film 16 and the second piezoelectric film 26 vary in the thickness and the stress, the amount of initial bending is relatively small, and an appropriate operation for a device can be performed.
  • All the components of the laminate structure shown in FIG. 2 can be prepared through a continuous film formation process and can be manufactured more simply than a process of the related art in which piezoelectric bodies are bonded to each other. As a result, the costs can be reduced.
  • a piezoelectric element having high stability and reliability can be obtained.

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