JP2018527206A - 電気めっきmems構造の高融点シード金属 - Google Patents
電気めっきmems構造の高融点シード金属 Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 70
- 239000002184 metal Substances 0.000 title claims abstract description 70
- 238000009713 electroplating Methods 0.000 title claims description 16
- 230000008018 melting Effects 0.000 title claims description 15
- 238000002844 melting Methods 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 239000003870 refractory metal Substances 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 26
- 229910001092 metal group alloy Inorganic materials 0.000 claims abstract description 16
- 238000004891 communication Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 187
- 229920002120 photoresistant polymer Polymers 0.000 claims description 29
- 239000011241 protective layer Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 17
- 239000007769 metal material Substances 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- 239000010955 niobium Substances 0.000 claims description 5
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 5
- 229910052703 rhodium Inorganic materials 0.000 claims description 5
- 239000010948 rhodium Substances 0.000 claims description 5
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910001080 W alloy Inorganic materials 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- 239000000872 buffer Substances 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 4
- MOWMLACGTDMJRV-UHFFFAOYSA-N nickel tungsten Chemical compound [Ni].[W] MOWMLACGTDMJRV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 230000006870 function Effects 0.000 description 9
- 239000000126 substance Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- 239000005350 fused silica glass Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 230000002427 irreversible effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- -1 but not limited to Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
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- 238000006467 substitution reaction Methods 0.000 description 1
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- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
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- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
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- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
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Abstract
【選択図】図1
Description
12 基板接点、導電性接点、電気接点
14 自立吊り下げ型機械MEMS構造、自立吊り下げ型金属MEMS構造
16 金属自立構造、カンチレバー自立構造、機械要素
17 自立構造の下側、底部表面
18 片持ち部分
20 シード層
21 導電性マウント
22 アンカー部分、アンカー構造
24 基板
26 電極
28 ゲート電圧源
30 回路
32 第1の側
34 第2の側
36 電源
38 電気負荷
40 保護層、導電層
42 犠牲剥離層
43 開口部
44 フォトレジストマスク
46 開口部
48 ギャップ
50 非露出面
52 露出面
Claims (22)
- 微小電気機械システム(MEMS)デバイス(10)であって、
基板(24)と、
前記基板(24)に形成された自立吊り下げ型電気めっき金属MEMS構造(14)とを含み、前記自立吊り下げ型電気めっき金属MEMS構造(14)は、
前記基板(24)に機械的に結合された金属機械要素(16)と、
前記機械要素(16)に機械的に結合されて電気的に連通し、高融点金属および高融点金属合金の少なくとも1つを含むシード層(20)とを含み、
前記機械要素(16)の厚さは、前記シード層(20)の厚さより実質的に厚く、それにより前記自立吊り下げ型電気めっき金属MEMS構造(14)の機械的および電気的特性は、前記機械要素(16)の材料特性によって規定される、MEMSデバイス(10)。 - 前記機械要素(16)が、ニッケル−タングステン合金からなる、請求項1に記載のMEMSデバイス(10)。
- 前記シード層(20)が、前記基板(24)に面する前記機械要素(16)の下側(17)に無傷のまま残される、請求項1に記載のMEMSデバイス(10)。
- 前記MEMSデバイス(10)が、スイッチであり、前記スイッチが、前記基板(24)に形成された少なくとも1つの導電性接点(12)をさらに含み、前記機械要素(16)が、前記導電性接点(12)の上に片持ち支持されたビームを含み、
前記シード層(20)が、前記ビームが接触位置にあるときに前記ビームと前記少なくとも1つの導電性接点(12)との間にオーム接触を提供する、請求項3に記載のMEMSデバイス(10)。 - 前記シード層(20)の前記高融点金属および高融点金属合金の前記少なくとも1つが、0.4Vより高い溶融電圧および1850℃より高い溶融温度を有する、請求項1に記載のMEMSデバイス(10)。
- 前機械要素(16)に機械的に結合された保護層(40)をさらに含み、前記保護層(40)が、前記シード層(20)によって覆われていない前記機械要素(16)の少なくとも1つの追加の表面に形成される、請求項1に記載のMEMSデバイス(10)。
- 前記高融点金属および高融点金属合金の前記少なくとも1つが、ルテニウム、タンタル、ニオブ、ロジウム、モリブデン、タングステン、バナジウム、クロム、ジルコニウム、ハフニウム、および/またはそれらの合金を含む、請求項1に記載のMEMSデバイス(10)。
- 前記高融点金属および高融点金属合金の前記少なくとも1つが、マイクロおよびナノ加工で使用されるエッチング液に耐性を有し、前記エッチング液が、硫酸、フッ化水素酸、緩衝酸化物、過酸化水素およびアルカリ性フォトレジスト現像液の1つまたは複数を含む、請求項1に記載のMEMSデバイス(10)。
- 前記MEMSデバイス(10)が、慣性センサである、請求項1に記載のMEMSデバイス(10)。
- 微小電気機械システム(MEMS)デバイス(10)を作製する方法であって、
基板(24)を設けることと、
前記基板(24)に自立金属MEMS構造(14)を形成することとを含み、前記自立金属MEMS構造(14)を形成することは、
前記基板(24)の一部に犠牲剥離層(42)を適用することと、
前記基板(24)および前記犠牲剥離層(42)の上に高融点金属および高融点金属合金の少なくとも1つを含むシード金属の層(20)を適用することと、
前記シード金属の層(20)の一部にフォトレジスト層を適用することと、
自立構造(16)を形成するために前記フォトレジスト層によって覆われていない前記シード金属の層(20)上に金属材料を電気めっきすることと、
前記自立構造(16)が前記基板(24)の上に片持ち支持されるように、前記フォトレジスト層、前記犠牲剥離層(42)、および前記自立構造(16)と接触していない前記シード金属の層(20)の一部を除去することとを含み、
前記自立構造(16)と接触している前記シード金属の層(20)の一部は、前記フォトレジスト層、前記犠牲剥離層(42)、および前記自立構造(16)と接触していない前記シード金属の層(20)の前記一部の前記除去の後、前記自立構造(16)の下側(17)に残る、方法。 - 前記自立構造(16)の厚さが、前記シード金属の層(20)の厚さより実質的に厚く、それにより前記自立金属MEMS構造(14)の機械的および電気的特性が、前記自立構造(16)の前記電気めっき金属材料によって規定される、請求項10に記載の方法。
- 前記高融点金属および前記高融点金属合金の一方が、ルテニウム、タンタル、ニオブ、ロジウム、モリブデン、タングステン、バナジウム、クロム、ジルコニウム、ハフニウム、および/またはそれらの合金の1つを含む、請求項10に記載の方法。
- 前記MEMS構造(14)を形成することが、前記自立構造(16)の少なくとも1つの追加の側を保護層(40)で被覆することをさらに含み、前記保護層(40)が、製造プロセス中に損傷またはエッチングに耐性を有する材料を含む、請求項10に記載の方法。
- 前記自立構造(16)の前記少なくとも1つの側を保護層(40)で被覆することが、前記自立構造(16)の各露出面(50)を前記保護層(40)で被覆することを含む、請求項13に記載の方法。
- 前記シード金属の層(20)上に前記金属材料を電気めっきすることが、ニッケル−タングステン合金を電気めっきすることを含む、請求項10に記載の方法。
- 前記犠牲剥離層(42)を除去することが、硫酸、フッ化水素酸、緩衝酸化物、および過酸化水素の少なくとも1つの適用を介して湿式エッチングを行うことを含み、
前記シード金属の層(20)が、硫酸、フッ化水素酸、緩衝酸化物、および過酸化水素に、かつアルカリ性フォトレジスト現像液に耐性を有する、請求項10に記載の方法。 - 前記基板(24)に少なくとも1つのMEMS接点を含む導電層を形成することをさらに含み、前記シード金属の層(20)が、前記自立構造(16)が接触位置にあるときに前記自立構造(16)と前記少なくとも1つのMEMS接点との間のオーム接触として機能し、前記シード金属の層(20)が、0.4Vより高い溶融電圧および1850℃より高い溶融温度を有する、請求項10に記載の方法。
- MEMSデバイス(10)の自立吊り下げ型金属微小電気機械システム(MEMS)構造であって、前記金属MEMS構造(14)は、
基板(24)の一部に犠牲剥離層(42)を適用することと、
前記基板(24)および前記犠牲剥離層(42)の上に高融点金属のシード層(20)を適用することと、
前記シード層(20)の一部にフォトレジスト層を適用することと、
前記シード層(20)に機械的に結合されて電気的に接続される自立構造(16)を形成するために前記フォトレジスト層によって覆われていない領域の前記シード層(20)上に金属材料を電気めっきすることと、
高融点金属の層が前記自立構造(16)の下側(17)に残り前記基板(24)に自立吊り下げ型金属MEMS構造(14)を集合的に形成するように、前記フォトレジスト層、前記犠牲剥離層(42)、および前記シード層(20)の一部を除去することとによって製造される、MEMS構造(14)。 - 前記自立構造(16)の前記電気めっき金属材料の厚さが、その前記下側(17)の前記高融点金属の層の厚さより実質的に厚く、それにより前記自立吊り下げ型電気めっき金属MEMS構造(14)の機械的および電気的特性が、前記電気めっき金属材料によって規定される、請求項18に記載のMEMS構造(14)。
- 前記金属MEMS構造(14)が、前記MEMSデバイス(10)がMEMSスイッチを含むように前記基板(24)に導電性接点(12)を形成することによって製造され、
前記自立構造(16)の下側(17)の前記高融点金属の層が、前記自立構造(16)が接触位置にあるときに前記自立構造(16)と前記導電性接点(12)との間にオーム接触を提供する、請求項18に記載のMEMS構造(14)。 - 前記電気めっき金属材料が、ニッケル−タングステン合金を含み、前記高融点金属が、0.4Vより高い溶融電圧および1850℃より高い溶融温度を有する材料を含む、請求項18に記載のMEMS構造(14)。
- 前記金属MEMS構造(14)が、前記自立構造(16)の前記下側(17)以外の前記自立構造(16)の1つまたは複数の側に保護層(40)を堆積することによって製造される、請求項18に記載のMEMS構造(14)。
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