JP6120094B2 - 固体撮像装置およびその製造方法、並びに電子機器 - Google Patents
固体撮像装置およびその製造方法、並びに電子機器 Download PDFInfo
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- JP6120094B2 JP6120094B2 JP2014056608A JP2014056608A JP6120094B2 JP 6120094 B2 JP6120094 B2 JP 6120094B2 JP 2014056608 A JP2014056608 A JP 2014056608A JP 2014056608 A JP2014056608 A JP 2014056608A JP 6120094 B2 JP6120094 B2 JP 6120094B2
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- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
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- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
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- H10F39/80—Constructional details of image sensors
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- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
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- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
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- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8067—Reflectors
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- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
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- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/809—Constructional details of image sensors of hybrid image sensors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
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- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
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- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014056608A JP6120094B2 (ja) | 2013-07-05 | 2014-03-19 | 固体撮像装置およびその製造方法、並びに電子機器 |
| CN201410302531.6A CN104282704B (zh) | 2013-07-05 | 2014-06-27 | 固态成像装置、其制造方法和电子设备 |
| CN201711306001.9A CN107833902B (zh) | 2013-07-05 | 2014-06-27 | 固态成像装置、其制造方法和电子设备 |
| CN201811580767.0A CN110010631B (zh) | 2013-07-05 | 2014-06-27 | 固态成像装置、其制造方法和电子设备 |
| US14/319,941 US9520430B2 (en) | 2013-07-05 | 2014-06-30 | Solid state imaging apparatus, production method thereof and electronic device |
| US15/337,216 US9871148B2 (en) | 2013-07-05 | 2016-10-28 | Solid state imaging apparatus, production method thereof and electronic device |
| US15/830,935 US10014417B2 (en) | 2013-07-05 | 2017-12-04 | Solid state imaging apparatus, production method thereof and electronic device |
| US16/017,541 US10490677B2 (en) | 2013-07-05 | 2018-06-25 | Solid state imaging apparatus, production method thereof and electronic device |
| US16/661,648 US10756218B2 (en) | 2013-07-05 | 2019-10-23 | Solid state imaging apparatus, production method thereof and electronic device |
| US16/893,111 US10923607B2 (en) | 2013-07-05 | 2020-06-04 | Solid state imaging apparatus, production method thereof and electronic device |
| US17/152,265 US11532762B2 (en) | 2013-07-05 | 2021-01-19 | Solid state imaging apparatus, production method thereof and electronic device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013141762 | 2013-07-05 | ||
| JP2013141762 | 2013-07-05 | ||
| JP2014056608A JP6120094B2 (ja) | 2013-07-05 | 2014-03-19 | 固体撮像装置およびその製造方法、並びに電子機器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015029047A JP2015029047A (ja) | 2015-02-12 |
| JP2015029047A5 JP2015029047A5 (enExample) | 2016-02-18 |
| JP6120094B2 true JP6120094B2 (ja) | 2017-04-26 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014056608A Active JP6120094B2 (ja) | 2013-07-05 | 2014-03-19 | 固体撮像装置およびその製造方法、並びに電子機器 |
Country Status (3)
| Country | Link |
|---|---|
| US (7) | US9520430B2 (enExample) |
| JP (1) | JP6120094B2 (enExample) |
| CN (3) | CN110010631B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10672823B2 (en) | 2017-11-14 | 2020-06-02 | Samsung Electronics Co., Ltd. | Image sensors |
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| US9640456B2 (en) * | 2013-03-15 | 2017-05-02 | Taiwan Semiconductor Manufacturing Company Limited | Support structure for integrated circuitry |
| JP6303803B2 (ja) | 2013-07-03 | 2018-04-04 | ソニー株式会社 | 固体撮像装置およびその製造方法 |
| JP6120094B2 (ja) | 2013-07-05 | 2017-04-26 | ソニー株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
| JP2015076569A (ja) * | 2013-10-11 | 2015-04-20 | ソニー株式会社 | 撮像装置およびその製造方法ならびに電子機器 |
| US9536920B2 (en) * | 2014-03-28 | 2017-01-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stacked image sensor having a barrier layer |
| US9614000B2 (en) * | 2014-05-15 | 2017-04-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Biased backside illuminated sensor shield structure |
| JP6578676B2 (ja) * | 2015-03-03 | 2019-09-25 | セイコーエプソン株式会社 | 画像読取装置および半導体装置 |
| TWI692859B (zh) | 2015-05-15 | 2020-05-01 | 日商新力股份有限公司 | 固體攝像裝置及其製造方法、以及電子機器 |
| JP6766808B2 (ja) * | 2015-05-18 | 2020-10-14 | ソニー株式会社 | 半導体装置および撮像装置 |
| WO2017018216A1 (ja) * | 2015-07-27 | 2017-02-02 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置及びその製造方法、並びに電子機器 |
| JP6725231B2 (ja) * | 2015-10-06 | 2020-07-15 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子、および電子装置 |
| JP6700811B2 (ja) * | 2016-01-26 | 2020-05-27 | キヤノン株式会社 | 半導体装置および半導体装置の製造方法 |
| FR3059143B1 (fr) * | 2016-11-24 | 2019-05-31 | Stmicroelectronics (Crolles 2) Sas | Puce de capteur d'image |
| EP3355355B1 (en) * | 2017-01-27 | 2019-03-13 | Detection Technology Oy | Asymmetrically positioned guard ring contacts |
| JP7158846B2 (ja) * | 2017-11-30 | 2022-10-24 | キヤノン株式会社 | 半導体装置および機器 |
| TWI646678B (zh) * | 2017-12-07 | 2019-01-01 | 晶相光電股份有限公司 | 影像感測裝置 |
| KR102385105B1 (ko) * | 2018-02-27 | 2022-04-08 | 삼성전자주식회사 | 크랙 검출용 칩 및 이를 이용한 크랙 검출 방법 |
| CN108520886B (zh) * | 2018-04-20 | 2024-07-09 | 苏州晶方半导体科技股份有限公司 | 一种影像传感芯片的封装结构及其封装方法 |
| US11069729B2 (en) * | 2018-05-01 | 2021-07-20 | Canon Kabushiki Kaisha | Photoelectric conversion device, and equipment |
| US11756977B2 (en) * | 2018-06-21 | 2023-09-12 | Semiconductor Components Industries, Llc | Backside illumination image sensors |
| CN119170615A (zh) * | 2018-10-15 | 2024-12-20 | 松下知识产权经营株式会社 | 摄像装置 |
| JP7282500B2 (ja) * | 2018-10-19 | 2023-05-29 | キヤノン株式会社 | 半導体装置、機器、半導体装置の製造方法 |
| US11227836B2 (en) * | 2018-10-23 | 2022-01-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pad structure for enhanced bondability |
| JP7175159B2 (ja) * | 2018-11-05 | 2022-11-18 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および製造方法、並びに電子機器 |
| KR102593777B1 (ko) * | 2018-11-14 | 2023-10-26 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 |
| JP7273488B2 (ja) * | 2018-12-04 | 2023-05-15 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置、及び電子機器 |
| CN112103302B (zh) * | 2019-06-18 | 2024-09-20 | 中芯国际集成电路制造(上海)有限公司 | 封装结构及其封装方法 |
| CN112242405B (zh) * | 2019-07-18 | 2024-07-12 | 群创光电股份有限公司 | 显示装置 |
| JP7679169B2 (ja) | 2019-08-08 | 2025-05-19 | キヤノン株式会社 | 光電変換装置、光電変換システム |
| US11094650B1 (en) * | 2020-02-11 | 2021-08-17 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor arrangement and method of making |
| JP7437987B2 (ja) * | 2020-03-23 | 2024-02-26 | ファスフォードテクノロジ株式会社 | ダイボンディング装置および半導体装置の製造方法 |
| KR102793910B1 (ko) | 2020-03-26 | 2025-04-08 | 삼성전자주식회사 | 관통 실리콘 비아를 포함하는 집적 회로 반도체 소자 |
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| US11289388B2 (en) * | 2020-04-02 | 2022-03-29 | Sandisk Technologies Llc | Semiconductor die including edge ring structures and methods for making the same |
| US11342286B2 (en) | 2020-04-02 | 2022-05-24 | Sandisk Technologies Llc | Semiconductor die including edge ring structures and methods for making the same |
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| KR102868874B1 (ko) * | 2020-12-04 | 2025-10-10 | 삼성전자주식회사 | 이미지 센서 |
| WO2024042996A1 (ja) * | 2022-08-26 | 2024-02-29 | ソニーセミコンダクタソリューションズ株式会社 | 積層基板及び半導体装置 |
| US20240282837A1 (en) * | 2023-02-22 | 2024-08-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Air liner for through substrate via |
| US20250248156A1 (en) * | 2024-01-31 | 2025-07-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and methods of manufacturing the same |
| DE102024116078A1 (de) * | 2024-06-10 | 2025-12-11 | Heliatek Gmbh | Elektrisches Bauelement mit mindestens einer elektrischen Durchkontaktierung und Verfahren zur Herstellung eines solchen elektrischen Bauelements |
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| JPH10173052A (ja) * | 1996-12-13 | 1998-06-26 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JP4427949B2 (ja) * | 2002-12-13 | 2010-03-10 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
| JP4028393B2 (ja) * | 2003-01-09 | 2007-12-26 | 株式会社東芝 | 半導体装置およびその製造方法 |
| JP4046069B2 (ja) * | 2003-11-17 | 2008-02-13 | ソニー株式会社 | 固体撮像素子及び固体撮像素子の製造方法 |
| JP4815769B2 (ja) * | 2004-08-27 | 2011-11-16 | ソニー株式会社 | 固体撮像装置及びその製造方法 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US10672823B2 (en) | 2017-11-14 | 2020-06-02 | Samsung Electronics Co., Ltd. | Image sensors |
| US10971537B2 (en) | 2017-11-14 | 2021-04-06 | Samsung Electronics Co., Ltd. | Image sensors |
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| CN107833902A (zh) | 2018-03-23 |
| CN107833902B (zh) | 2022-07-22 |
| US20200357938A1 (en) | 2020-11-12 |
| US20180102444A1 (en) | 2018-04-12 |
| US20200058809A1 (en) | 2020-02-20 |
| US9520430B2 (en) | 2016-12-13 |
| US20210184060A1 (en) | 2021-06-17 |
| CN110010631A (zh) | 2019-07-12 |
| US20150008555A1 (en) | 2015-01-08 |
| CN110010631B (zh) | 2022-11-25 |
| US10014417B2 (en) | 2018-07-03 |
| US10490677B2 (en) | 2019-11-26 |
| CN104282704A (zh) | 2015-01-14 |
| CN104282704B (zh) | 2019-01-18 |
| US20180301573A1 (en) | 2018-10-18 |
| US20170047457A1 (en) | 2017-02-16 |
| US11532762B2 (en) | 2022-12-20 |
| US10923607B2 (en) | 2021-02-16 |
| US10756218B2 (en) | 2020-08-25 |
| US9871148B2 (en) | 2018-01-16 |
| JP2015029047A (ja) | 2015-02-12 |
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