JP6120094B2 - 固体撮像装置およびその製造方法、並びに電子機器 - Google Patents

固体撮像装置およびその製造方法、並びに電子機器 Download PDF

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JP6120094B2
JP6120094B2 JP2014056608A JP2014056608A JP6120094B2 JP 6120094 B2 JP6120094 B2 JP 6120094B2 JP 2014056608 A JP2014056608 A JP 2014056608A JP 2014056608 A JP2014056608 A JP 2014056608A JP 6120094 B2 JP6120094 B2 JP 6120094B2
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imaging device
solid
state imaging
guard ring
pad
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JP2015029047A5 (enExample
JP2015029047A (ja
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朋和 大地
朋和 大地
洋平 千葉
洋平 千葉
恭平 水田
恭平 水田
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Sony Corp
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Sony Corp
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Priority to JP2014056608A priority Critical patent/JP6120094B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Priority to CN201410302531.6A priority patent/CN104282704B/zh
Priority to CN201711306001.9A priority patent/CN107833902B/zh
Priority to CN201811580767.0A priority patent/CN110010631B/zh
Priority to US14/319,941 priority patent/US9520430B2/en
Publication of JP2015029047A publication Critical patent/JP2015029047A/ja
Publication of JP2015029047A5 publication Critical patent/JP2015029047A5/ja
Priority to US15/337,216 priority patent/US9871148B2/en
Application granted granted Critical
Publication of JP6120094B2 publication Critical patent/JP6120094B2/ja
Priority to US15/830,935 priority patent/US10014417B2/en
Priority to US16/017,541 priority patent/US10490677B2/en
Priority to US16/661,648 priority patent/US10756218B2/en
Priority to US16/893,111 priority patent/US10923607B2/en
Priority to US17/152,265 priority patent/US11532762B2/en
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    • HELECTRICITY
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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    • H10F39/011Manufacture or treatment of image sensors covered by group H10F39/12
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    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
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    • H10F39/10Integrated devices
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    • H10F39/80Constructional details of image sensors
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    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
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    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
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    • H10F39/80Constructional details of image sensors
    • H10F39/809Constructional details of image sensors of hybrid image sensors
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    • H10F39/80Constructional details of image sensors
    • H10F39/811Interconnections
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2014056608A 2013-07-05 2014-03-19 固体撮像装置およびその製造方法、並びに電子機器 Active JP6120094B2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP2014056608A JP6120094B2 (ja) 2013-07-05 2014-03-19 固体撮像装置およびその製造方法、並びに電子機器
CN201410302531.6A CN104282704B (zh) 2013-07-05 2014-06-27 固态成像装置、其制造方法和电子设备
CN201711306001.9A CN107833902B (zh) 2013-07-05 2014-06-27 固态成像装置、其制造方法和电子设备
CN201811580767.0A CN110010631B (zh) 2013-07-05 2014-06-27 固态成像装置、其制造方法和电子设备
US14/319,941 US9520430B2 (en) 2013-07-05 2014-06-30 Solid state imaging apparatus, production method thereof and electronic device
US15/337,216 US9871148B2 (en) 2013-07-05 2016-10-28 Solid state imaging apparatus, production method thereof and electronic device
US15/830,935 US10014417B2 (en) 2013-07-05 2017-12-04 Solid state imaging apparatus, production method thereof and electronic device
US16/017,541 US10490677B2 (en) 2013-07-05 2018-06-25 Solid state imaging apparatus, production method thereof and electronic device
US16/661,648 US10756218B2 (en) 2013-07-05 2019-10-23 Solid state imaging apparatus, production method thereof and electronic device
US16/893,111 US10923607B2 (en) 2013-07-05 2020-06-04 Solid state imaging apparatus, production method thereof and electronic device
US17/152,265 US11532762B2 (en) 2013-07-05 2021-01-19 Solid state imaging apparatus, production method thereof and electronic device

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JP2013141762 2013-07-05
JP2013141762 2013-07-05
JP2014056608A JP6120094B2 (ja) 2013-07-05 2014-03-19 固体撮像装置およびその製造方法、並びに電子機器

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