CN107833902B - 固态成像装置、其制造方法和电子设备 - Google Patents

固态成像装置、其制造方法和电子设备 Download PDF

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CN107833902B
CN107833902B CN201711306001.9A CN201711306001A CN107833902B CN 107833902 B CN107833902 B CN 107833902B CN 201711306001 A CN201711306001 A CN 201711306001A CN 107833902 B CN107833902 B CN 107833902B
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oxide
semiconductor substrate
insulating
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insulating region
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CN107833902A (zh
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水田恭平
大地朋和
千叶洋平
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Sony Corp
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    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling

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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
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CN201711306001.9A 2013-07-05 2014-06-27 固态成像装置、其制造方法和电子设备 Active CN107833902B (zh)

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JP2013141762 2013-07-05
JP2013-141762 2013-07-05
JP2014056608A JP6120094B2 (ja) 2013-07-05 2014-03-19 固体撮像装置およびその製造方法、並びに電子機器
JP2014-056608 2014-03-19
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Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9640456B2 (en) * 2013-03-15 2017-05-02 Taiwan Semiconductor Manufacturing Company Limited Support structure for integrated circuitry
JP6303803B2 (ja) * 2013-07-03 2018-04-04 ソニー株式会社 固体撮像装置およびその製造方法
JP6120094B2 (ja) * 2013-07-05 2017-04-26 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP2015076569A (ja) * 2013-10-11 2015-04-20 ソニー株式会社 撮像装置およびその製造方法ならびに電子機器
US9536920B2 (en) * 2014-03-28 2017-01-03 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked image sensor having a barrier layer
US9614000B2 (en) * 2014-05-15 2017-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Biased backside illuminated sensor shield structure
JP6578676B2 (ja) * 2015-03-03 2019-09-25 セイコーエプソン株式会社 画像読取装置および半導体装置
TWI692859B (zh) 2015-05-15 2020-05-01 日商新力股份有限公司 固體攝像裝置及其製造方法、以及電子機器
CN107615481B (zh) * 2015-05-18 2020-07-21 索尼公司 半导体装置和成像装置
WO2017018216A1 (ja) * 2015-07-27 2017-02-02 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及びその製造方法、並びに電子機器
JP6725231B2 (ja) * 2015-10-06 2020-07-15 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および電子装置
JP6700811B2 (ja) * 2016-01-26 2020-05-27 キヤノン株式会社 半導体装置および半導体装置の製造方法
FR3059143B1 (fr) * 2016-11-24 2019-05-31 Stmicroelectronics (Crolles 2) Sas Puce de capteur d'image
EP3355355B1 (en) * 2017-01-27 2019-03-13 Detection Technology Oy Asymmetrically positioned guard ring contacts
KR102525166B1 (ko) 2017-11-14 2023-04-24 삼성전자주식회사 이미지 센서
JP7158846B2 (ja) * 2017-11-30 2022-10-24 キヤノン株式会社 半導体装置および機器
TWI646678B (zh) * 2017-12-07 2019-01-01 晶相光電股份有限公司 影像感測裝置
KR102385105B1 (ko) * 2018-02-27 2022-04-08 삼성전자주식회사 크랙 검출용 칩 및 이를 이용한 크랙 검출 방법
CN108520886B (zh) * 2018-04-20 2024-07-09 苏州晶方半导体科技股份有限公司 一种影像传感芯片的封装结构及其封装方法
US11069729B2 (en) * 2018-05-01 2021-07-20 Canon Kabushiki Kaisha Photoelectric conversion device, and equipment
US11756977B2 (en) * 2018-06-21 2023-09-12 Semiconductor Components Industries, Llc Backside illumination image sensors
CN119170615A (zh) * 2018-10-15 2024-12-20 松下知识产权经营株式会社 摄像装置
JP7282500B2 (ja) * 2018-10-19 2023-05-29 キヤノン株式会社 半導体装置、機器、半導体装置の製造方法
US11227836B2 (en) * 2018-10-23 2022-01-18 Taiwan Semiconductor Manufacturing Company, Ltd. Pad structure for enhanced bondability
JP7175159B2 (ja) * 2018-11-05 2022-11-18 ソニーセミコンダクタソリューションズ株式会社 撮像素子および製造方法、並びに電子機器
KR102593777B1 (ko) * 2018-11-14 2023-10-26 에스케이하이닉스 주식회사 이미지 센싱 장치
JP7273488B2 (ja) * 2018-12-04 2023-05-15 ソニーセミコンダクタソリューションズ株式会社 半導体装置、及び電子機器
CN112103302B (zh) * 2019-06-18 2024-09-20 中芯国际集成电路制造(上海)有限公司 封装结构及其封装方法
CN112242405B (zh) * 2019-07-18 2024-07-12 群创光电股份有限公司 显示装置
JP7679169B2 (ja) 2019-08-08 2025-05-19 キヤノン株式会社 光電変換装置、光電変換システム
US11094650B1 (en) * 2020-02-11 2021-08-17 Taiwan Semiconductor Manufacturing Company Limited Semiconductor arrangement and method of making
JP7437987B2 (ja) * 2020-03-23 2024-02-26 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
KR102793910B1 (ko) 2020-03-26 2025-04-08 삼성전자주식회사 관통 실리콘 비아를 포함하는 집적 회로 반도체 소자
KR20210122526A (ko) * 2020-04-01 2021-10-12 에스케이하이닉스 주식회사 이미지 센서 장치
KR102842579B1 (ko) 2020-04-01 2025-08-06 에스케이하이닉스 주식회사 이미지 센서 장치
US11342286B2 (en) 2020-04-02 2022-05-24 Sandisk Technologies Llc Semiconductor die including edge ring structures and methods for making the same
US11289388B2 (en) * 2020-04-02 2022-03-29 Sandisk Technologies Llc Semiconductor die including edge ring structures and methods for making the same
US11515227B2 (en) * 2020-04-02 2022-11-29 Sandisk Technologies Llc Semiconductor die including edge ring structures and methods for making the same
JP2020102656A (ja) * 2020-04-06 2020-07-02 キヤノン株式会社 半導体装置および半導体装置の製造方法
KR102760973B1 (ko) 2020-05-11 2025-02-03 에스케이하이닉스 주식회사 이미지 센서 장치
KR102868874B1 (ko) * 2020-12-04 2025-10-10 삼성전자주식회사 이미지 센서
WO2024042996A1 (ja) * 2022-08-26 2024-02-29 ソニーセミコンダクタソリューションズ株式会社 積層基板及び半導体装置
US20240282837A1 (en) * 2023-02-22 2024-08-22 Taiwan Semiconductor Manufacturing Company, Ltd. Air liner for through substrate via
US20250248156A1 (en) * 2024-01-31 2025-07-31 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and methods of manufacturing the same
DE102024116078A1 (de) * 2024-06-10 2025-12-11 Heliatek Gmbh Elektrisches Bauelement mit mindestens einer elektrischen Durchkontaktierung und Verfahren zur Herstellung eines solchen elektrischen Bauelements

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101728408A (zh) * 2008-10-30 2010-06-09 索尼株式会社 半导体器件
CN101930944A (zh) * 2009-06-17 2010-12-29 索尼公司 制造固态成像器件的方法以及固态成像器件
CN102082156A (zh) * 2009-11-30 2011-06-01 索尼公司 固体摄像器件、固体摄像器件制造方法以及电子装置
CN102130140A (zh) * 2008-01-21 2011-07-20 索尼株式会社 固体摄像装置
CN102157537A (zh) * 2010-01-29 2011-08-17 索尼公司 固体摄像器件及其制造方法、电子装置和半导体器件
CN102446934A (zh) * 2010-10-07 2012-05-09 索尼公司 固态摄像器件及其制造方法和电子装置
CN102651377A (zh) * 2011-02-28 2012-08-29 索尼公司 固态成像器件及其制造方法、电子设备和半导体器件

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10173052A (ja) * 1996-12-13 1998-06-26 Fujitsu Ltd 半導体装置及びその製造方法
JP4427949B2 (ja) * 2002-12-13 2010-03-10 ソニー株式会社 固体撮像素子及びその製造方法
JP4028393B2 (ja) * 2003-01-09 2007-12-26 株式会社東芝 半導体装置およびその製造方法
JP4046069B2 (ja) * 2003-11-17 2008-02-13 ソニー株式会社 固体撮像素子及び固体撮像素子の製造方法
JP4815769B2 (ja) * 2004-08-27 2011-11-16 ソニー株式会社 固体撮像装置及びその製造方法
JP4470170B2 (ja) * 2004-11-30 2010-06-02 エルピーダメモリ株式会社 半導体装置及びその製造方法
JP4816601B2 (ja) 2007-09-07 2011-11-16 ソニー株式会社 固体撮像素子及び固体撮像素子の製造方法
KR20090033636A (ko) * 2007-10-01 2009-04-06 삼성전자주식회사 이미지 센서 및 그 제조 방법
KR20090035262A (ko) * 2007-10-05 2009-04-09 삼성전자주식회사 이미지 센서 및 그의 제조 방법
US8274777B2 (en) * 2008-04-08 2012-09-25 Micron Technology, Inc. High aspect ratio openings
JP5353201B2 (ja) * 2008-11-21 2013-11-27 ソニー株式会社 固体撮像装置の製造方法
JP2010219425A (ja) 2009-03-18 2010-09-30 Toshiba Corp 半導体装置
JP2010232284A (ja) * 2009-03-26 2010-10-14 Sony Corp 固体撮像装置、および、その製造方法、電子機器
JP5532867B2 (ja) 2009-11-30 2014-06-25 ソニー株式会社 固体撮像装置及びその製造方法、並びに固体撮像素子の製造方法及び半導体装置
JP2011124501A (ja) * 2009-12-14 2011-06-23 Sharp Corp 固体撮像装置およびその製造方法
JP5172819B2 (ja) * 2009-12-28 2013-03-27 株式会社東芝 固体撮像装置
JP2010212735A (ja) 2010-06-17 2010-09-24 Sony Corp 固体撮像装置とその製造方法、及びカメラ
JP5274678B2 (ja) * 2011-02-09 2013-08-28 キヤノン株式会社 光電変換素子、およびこれを用いた光電変換装置、撮像システム
JP5826511B2 (ja) 2011-04-26 2015-12-02 株式会社東芝 固体撮像装置及びその製造方法
US9153490B2 (en) * 2011-07-19 2015-10-06 Sony Corporation Solid-state imaging device, manufacturing method of solid-state imaging device, manufacturing method of semiconductor device, semiconductor device, and electronic device
JP2013062382A (ja) * 2011-09-13 2013-04-04 Toshiba Corp 半導体装置およびその製造方法
JP2013115289A (ja) * 2011-11-30 2013-06-10 Sony Corp 半導体装置、半導体装置の製造方法、および電子機器
JP2013123000A (ja) * 2011-12-12 2013-06-20 Sony Corp 固体撮像装置およびその製造方法
JP2013197113A (ja) * 2012-03-15 2013-09-30 Sony Corp 固体撮像装置およびカメラシステム
CN103367374B (zh) * 2012-04-02 2017-06-09 索尼公司 固体摄像装置及其制造方法、半导体器件的制造装置和方法、电子设备
KR101934864B1 (ko) * 2012-05-30 2019-03-18 삼성전자주식회사 관통 실리콘 비아 구조물 및 그 제조 방법, 이를 포함하는 이미지 센서 및 그 제조 방법
JP6120094B2 (ja) 2013-07-05 2017-04-26 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102130140A (zh) * 2008-01-21 2011-07-20 索尼株式会社 固体摄像装置
CN101728408A (zh) * 2008-10-30 2010-06-09 索尼株式会社 半导体器件
CN101930944A (zh) * 2009-06-17 2010-12-29 索尼公司 制造固态成像器件的方法以及固态成像器件
CN102082156A (zh) * 2009-11-30 2011-06-01 索尼公司 固体摄像器件、固体摄像器件制造方法以及电子装置
CN102157537A (zh) * 2010-01-29 2011-08-17 索尼公司 固体摄像器件及其制造方法、电子装置和半导体器件
CN102446934A (zh) * 2010-10-07 2012-05-09 索尼公司 固态摄像器件及其制造方法和电子装置
CN102651377A (zh) * 2011-02-28 2012-08-29 索尼公司 固态成像器件及其制造方法、电子设备和半导体器件

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