JP6112940B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP6112940B2
JP6112940B2 JP2013077408A JP2013077408A JP6112940B2 JP 6112940 B2 JP6112940 B2 JP 6112940B2 JP 2013077408 A JP2013077408 A JP 2013077408A JP 2013077408 A JP2013077408 A JP 2013077408A JP 6112940 B2 JP6112940 B2 JP 6112940B2
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Japan
Prior art keywords
dielectric film
dummy electrode
electrode
dummy
semiconductor device
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JP2013077408A
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English (en)
Japanese (ja)
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JP2014029983A5 (enExample
JP2014029983A (ja
Inventor
拓行 岡崎
拓行 岡崎
南條　拓真
拓真 南條
鈴木　洋介
洋介 鈴木
章文 今井
章文 今井
吹田　宗義
宗義 吹田
柳生　栄治
栄治 柳生
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2013077408A priority Critical patent/JP6112940B2/ja
Priority to US13/910,607 priority patent/US8987125B2/en
Publication of JP2014029983A publication Critical patent/JP2014029983A/ja
Publication of JP2014029983A5 publication Critical patent/JP2014029983A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28581—Deposition of Schottky electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2013077408A 2012-07-05 2013-04-03 半導体装置の製造方法 Active JP6112940B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013077408A JP6112940B2 (ja) 2012-07-05 2013-04-03 半導体装置の製造方法
US13/910,607 US8987125B2 (en) 2012-07-05 2013-06-05 Method for manufacturing semiconductor device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012151680 2012-07-05
JP2012151680 2012-07-05
JP2013077408A JP6112940B2 (ja) 2012-07-05 2013-04-03 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2014029983A JP2014029983A (ja) 2014-02-13
JP2014029983A5 JP2014029983A5 (enExample) 2015-12-17
JP6112940B2 true JP6112940B2 (ja) 2017-04-12

Family

ID=49878827

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JP2013077408A Active JP6112940B2 (ja) 2012-07-05 2013-04-03 半導体装置の製造方法

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US (1) US8987125B2 (enExample)
JP (1) JP6112940B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI653742B (zh) * 2014-05-30 2019-03-11 台達電子工業股份有限公司 半導體裝置與其之製造方法
CN112768359A (zh) * 2020-12-31 2021-05-07 深圳市汇芯通信技术有限公司 用于制备射频半导体器件的方法及其结构
CN113903664B (zh) * 2021-09-13 2023-07-11 深圳市汇芯通信技术有限公司 半导体器件的制备方法及其结构
US20240178311A1 (en) * 2022-11-30 2024-05-30 Wolfspeed, Inc. High Frequency, High Temperature Transistor Devices

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6032364A (ja) * 1983-08-01 1985-02-19 Toshiba Corp 半導体装置の製造方法
JPS6039875A (ja) * 1983-08-12 1985-03-01 Fujitsu Ltd 半導体装置の製造方法
US4711701A (en) * 1986-09-16 1987-12-08 Texas Instruments Incorporated Self-aligned transistor method
EP0268298B1 (en) * 1986-11-20 1995-04-05 Sumitomo Electric Industries Limited Method of producing a Schottky-barrier field effect transistor
JPS63129632A (ja) * 1986-11-20 1988-06-02 Sumitomo Electric Ind Ltd 絶縁膜のパタ−ン形成方法とそれを利用した電界効果トランジスタのゲ−ト電極の形成方法
JPH01194475A (ja) * 1988-01-29 1989-08-04 Sumitomo Electric Ind Ltd 電界効果トランジスタ及びその製造方法
KR910005400B1 (ko) * 1988-09-05 1991-07-29 재단법인 한국전자통신연구소 다층레지스트를 이용한 자기정합형 갈륨비소 전계효과트랜지스터의 제조방법
US5212117A (en) * 1989-10-24 1993-05-18 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device contact structure using lift
JPH05152294A (ja) * 1991-12-02 1993-06-18 Mitsubishi Electric Corp 微細パターンの形成方法と半導体装置の製造方法
JPH05267350A (ja) 1992-03-23 1993-10-15 Sumitomo Electric Ind Ltd 半導体装置の製造方法
JP2885616B2 (ja) * 1992-07-31 1999-04-26 株式会社東芝 半導体装置およびその製造方法
JP2809189B2 (ja) 1996-04-25 1998-10-08 日本電気株式会社 半導体トランジスタの製造方法
US5929467A (en) * 1996-12-04 1999-07-27 Sony Corporation Field effect transistor with nitride compound
JP2000077351A (ja) 1998-08-28 2000-03-14 Japan Radio Co Ltd 多層レジスト構造基板およびｔ型ダミーゲート構造基板の製造方法
JP2000195874A (ja) 1998-12-25 2000-07-14 Fujitsu Quantum Device Kk 半導体装置及びその製造方法
KR100378259B1 (ko) * 2001-01-20 2003-03-29 주승기 결정질 활성층을 포함하는 박막트랜지스터 제작 방법 및장치
US6885032B2 (en) * 2001-11-21 2005-04-26 Visible Tech-Knowledgy, Inc. Display assembly having flexible transistors on a flexible substrate
JP2004273752A (ja) * 2003-03-07 2004-09-30 Matsushita Electric Ind Co Ltd 半導体発光素子の製造方法
JP2004273655A (ja) * 2003-03-07 2004-09-30 Nippon Telegr & Teleph Corp <Ntt> ヘテロ構造電界効果トランジスタ
KR100700493B1 (ko) * 2005-05-24 2007-03-28 삼성에스디아이 주식회사 효율적인 필라멘트 배열 구조를 갖는 촉매 강화 화학 기상증착 장치
US8283699B2 (en) * 2006-11-13 2012-10-09 Cree, Inc. GaN based HEMTs with buried field plates
JP2010205837A (ja) * 2009-03-02 2010-09-16 Mitsubishi Electric Corp 電界効果型トランジスタ及びその製造方法
JP2011233612A (ja) * 2010-04-26 2011-11-17 Mitsubishi Electric Corp 半導体装置及びその製造方法

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Publication number Publication date
US8987125B2 (en) 2015-03-24
JP2014029983A (ja) 2014-02-13
US20140011349A1 (en) 2014-01-09

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