JP2014029983A - 半導体装置の製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 75
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 238000000151 deposition Methods 0.000 claims abstract description 24
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 58
- 239000000463 material Substances 0.000 claims description 32
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 8
- 238000001039 wet etching Methods 0.000 claims description 8
- 238000004050 hot filament vapor deposition Methods 0.000 claims description 6
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 239000012670 alkaline solution Substances 0.000 claims 1
- 125000005842 heteroatom Chemical group 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 description 31
- 229910052751 metal Inorganic materials 0.000 description 29
- 239000002184 metal Substances 0.000 description 29
- 150000004767 nitrides Chemical class 0.000 description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 230000005669 field effect Effects 0.000 description 8
- 150000002739 metals Chemical class 0.000 description 6
- 229910052758 niobium Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
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- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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Abstract
【解決手段】本発明は、AlGaN層(4)を含むヘテロ接合半導体装置の製造方法であって、(a)AlGaN層(4)上のゲート電極9が配置される領域に、ダミー電極7を形成する工程と、(b)異方性のある装置を用いて、ダミー電極4側面を露出させつつ、AlGaN層(4)上に誘電膜8を堆積させる工程と、(c)ダミー電極7を除去することにより、誘電膜8に開口を形成する工程と、(d)開口内からその周辺の誘電膜8上に延在するゲート電極9を形成する工程とを備える。
【選択図】図1
Description
<構成>
図1は、本発明の実施形態に関するヘテロ接合を有する半導体装置の構造を示す図である。本実施形態では特に、窒化物半導体からなるヘテロ接合電界効果型トランジスタの構造が示されている。
図2〜図10に、本発明に関する窒化物半導体からなるヘテロ接合電界効果型トランジスタの製造工程の一例を示す。なお図2〜図10は、本発明の実施形態に関する半導体装置の製造工程を示す図である。
上記の実施形態では、ウェットエッチング処理によってダミー電極7の除去を行っていたが、超音波洗浄処理によってダミー電極7の除去を行ってもよい。
上記の実施形態では、ダミー電極を1層の金属層で形成していたが、ダミー電極側面の少なくとも一部を露出させ、後のウェットエッチングでダミー電極除去をしやすくするため、ダミー電極に2層以上の金属層を用いてT型ゲート形状に形成してもよい。
本発明に関する実施形態によれば、半導体装置の製造方法は、ヘテロ接合半導体装置の製造方法であって、(a)半導体層であるバリア層4上のゲート電極9が配置される領域に、ダミー材料からなるダミー電極7を形成する工程と、(b)バリア層4上に、ダミー電極7を覆って、誘電膜8を堆積させる工程と、(c)ダミー電極7を除去することにより、誘電膜8に開口10を形成する工程と、(d)開口10内からその周辺の誘電膜8上に延在するゲート電極9を形成する工程とを備える。
Claims (10)
- AlGaN層を含むヘテロ接合半導体装置の製造方法であって、
(a)AlGaN層上のゲート電極が配置される領域に、ダミー電極を形成する工程と、
(b)異方性のある装置を用いて、前記ダミー電極側面を露出させつつ、前記AlGaN層上に誘電膜を堆積させる工程と、
(c)前記ダミー電極を除去することにより、前記誘電膜に開口を形成する工程と、
(d)前記開口内からその周辺の前記誘電膜上に延在する前記ゲート電極を形成する工程とを備えることを特徴とする、
半導体装置の製造方法。 - 前記工程(c)が、ウェットエッチング処理によって前記ダミー電極を除去する工程であることを特徴とする、
請求項1に記載の半導体装置の製造方法。 - 前記工程(c)が、超音波洗浄処理によって前記ダミー電極を除去する工程であることを特徴とする、
請求項1に記載の半導体装置の製造方法。 - 前記工程(a)が、前記半導体層上の前記ゲート電極が配置される領域に、前記誘電膜よりも前記半導体層との密着性が低い材料からなる前記ダミー電極を形成する工程であることを特徴とする、
請求項1に記載の半導体装置の製造方法。 - 前記工程(b)が、前記工程(c)において前記ダミー電極よりも除去比率が低い前記誘電膜を堆積させる工程であることを特徴とする、
請求項1に記載の半導体装置の製造方法。 - 前記工程(b)が、Cat−CVD法によって前記誘電膜を堆積させる工程であることを特徴とする、
請求項1に記載の半導体装置の製造方法。 - 前記工程(b)が、ECRスパッタ法によって前記誘電膜を堆積させる工程であることを特徴とする、
請求項1に記載の半導体装置の製造方法。 - 前記工程(b)が、前記AlGaN層と接する前記ダミー電極の厚さよりも薄く前記誘電膜を堆積させる工程であることを特徴とする、
請求項1に記載の半導体装置の製造方法。 - 前記工程(a)が、T型の形状である前記ダミー電極を形成する工程であることを特徴とする、
請求項1に記載の半導体装置の製造方法。 - 前記工程(a)が、2層以上のダミー材料から前記ダミー電極を形成する工程であり、
前記AlGaN層に接する前記ダミー材料が、他の前記ダミー材料よりも酸またはアルカリ溶液に溶けやすいことを特徴とする、
請求項9に記載の半導体装置の製造方法。
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JP2013077408A JP6112940B2 (ja) | 2012-07-05 | 2013-04-03 | 半導体装置の製造方法 |
US13/910,607 US8987125B2 (en) | 2012-07-05 | 2013-06-05 | Method for manufacturing semiconductor device |
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CN110854185A (zh) * | 2014-05-30 | 2020-02-28 | 台达电子工业股份有限公司 | 半导体装置 |
CN112768359A (zh) * | 2020-12-31 | 2021-05-07 | 深圳市汇芯通信技术有限公司 | 用于制备射频半导体器件的方法及其结构 |
CN113903664B (zh) * | 2021-09-13 | 2023-07-11 | 深圳市汇芯通信技术有限公司 | 半导体器件的制备方法及其结构 |
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JPS6039875A (ja) * | 1983-08-12 | 1985-03-01 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS63129632A (ja) * | 1986-11-20 | 1988-06-02 | Sumitomo Electric Ind Ltd | 絶縁膜のパタ−ン形成方法とそれを利用した電界効果トランジスタのゲ−ト電極の形成方法 |
JPH01194475A (ja) * | 1988-01-29 | 1989-08-04 | Sumitomo Electric Ind Ltd | 電界効果トランジスタ及びその製造方法 |
JPH05152294A (ja) * | 1991-12-02 | 1993-06-18 | Mitsubishi Electric Corp | 微細パターンの形成方法と半導体装置の製造方法 |
JPH0697160A (ja) * | 1992-07-31 | 1994-04-08 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2004273752A (ja) * | 2003-03-07 | 2004-09-30 | Matsushita Electric Ind Co Ltd | 半導体発光素子の製造方法 |
JP2004273655A (ja) * | 2003-03-07 | 2004-09-30 | Nippon Telegr & Teleph Corp <Ntt> | ヘテロ構造電界効果トランジスタ |
JP2010205837A (ja) * | 2009-03-02 | 2010-09-16 | Mitsubishi Electric Corp | 電界効果型トランジスタ及びその製造方法 |
JP2011233612A (ja) * | 2010-04-26 | 2011-11-17 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
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US8987125B2 (en) | 2015-03-24 |
US20140011349A1 (en) | 2014-01-09 |
JP6112940B2 (ja) | 2017-04-12 |
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