JP6083930B2 - 光電変換装置および撮像システム、光電変換装置の製造方法 - Google Patents

光電変換装置および撮像システム、光電変換装置の製造方法 Download PDF

Info

Publication number
JP6083930B2
JP6083930B2 JP2012008200A JP2012008200A JP6083930B2 JP 6083930 B2 JP6083930 B2 JP 6083930B2 JP 2012008200 A JP2012008200 A JP 2012008200A JP 2012008200 A JP2012008200 A JP 2012008200A JP 6083930 B2 JP6083930 B2 JP 6083930B2
Authority
JP
Japan
Prior art keywords
photoelectric conversion
nitrogen concentration
silicon oxide
atomic
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012008200A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013149741A5 (enExample
JP2013149741A (ja
Inventor
克範 廣田
克範 廣田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2012008200A priority Critical patent/JP6083930B2/ja
Priority to US13/742,226 priority patent/US9412773B2/en
Priority to CN201310019208.3A priority patent/CN103219348B/zh
Publication of JP2013149741A publication Critical patent/JP2013149741A/ja
Publication of JP2013149741A5 publication Critical patent/JP2013149741A5/ja
Priority to US15/209,632 priority patent/US10103186B2/en
Application granted granted Critical
Publication of JP6083930B2 publication Critical patent/JP6083930B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/028—Manufacture or treatment of image sensors covered by group H10F39/12 performed after manufacture of the image sensors, e.g. annealing, gettering of impurities, short-circuit elimination or recrystallisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Light Receiving Elements (AREA)
JP2012008200A 2012-01-18 2012-01-18 光電変換装置および撮像システム、光電変換装置の製造方法 Active JP6083930B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012008200A JP6083930B2 (ja) 2012-01-18 2012-01-18 光電変換装置および撮像システム、光電変換装置の製造方法
US13/742,226 US9412773B2 (en) 2012-01-18 2013-01-15 Photoelectric conversion apparatus, image pickup system, and method for manufacturing photoelectric conversion apparatus
CN201310019208.3A CN103219348B (zh) 2012-01-18 2013-01-18 光电转换装置、图像拾取系统和光电转换装置的制造方法
US15/209,632 US10103186B2 (en) 2012-01-18 2016-07-13 Photoelectric conversion apparatus, image pickup system, and method for manufacturing photoelectric conversion apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012008200A JP6083930B2 (ja) 2012-01-18 2012-01-18 光電変換装置および撮像システム、光電変換装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017009714A Division JP6362121B2 (ja) 2017-01-23 2017-01-23 光電変換装置および撮像システム、光電変換装置の製造方法

Publications (3)

Publication Number Publication Date
JP2013149741A JP2013149741A (ja) 2013-08-01
JP2013149741A5 JP2013149741A5 (enExample) 2015-03-05
JP6083930B2 true JP6083930B2 (ja) 2017-02-22

Family

ID=48779386

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012008200A Active JP6083930B2 (ja) 2012-01-18 2012-01-18 光電変換装置および撮像システム、光電変換装置の製造方法

Country Status (3)

Country Link
US (2) US9412773B2 (enExample)
JP (1) JP6083930B2 (enExample)
CN (1) CN103219348B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9236411B2 (en) 2011-08-03 2016-01-12 Omnivision Technologies, Inc. Color filter patterning using hard mask
US20130341692A1 (en) * 2012-06-22 2013-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Novel [N] Profile in Si-Ox Interface for CMOS Image Sensor Performance Improvement
US8941159B2 (en) 2013-01-30 2015-01-27 Omnivision Technologies, Inc. Color filter including clear pixel and hard mask
JP6206012B2 (ja) * 2013-09-06 2017-10-04 住友電気工業株式会社 炭化珪素半導体装置
JP6355311B2 (ja) * 2013-10-07 2018-07-11 キヤノン株式会社 固体撮像装置、その製造方法及び撮像システム
JP2015109343A (ja) * 2013-12-04 2015-06-11 キヤノン株式会社 半導体装置の製造方法
US9608033B2 (en) * 2014-05-12 2017-03-28 Canon Kabushiki Kaisha Solid-state image sensor, method of manufacturing the same, and camera
JP6246076B2 (ja) * 2014-06-05 2017-12-13 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
JP2016103615A (ja) * 2014-11-28 2016-06-02 キヤノン株式会社 撮像装置の製造方法、撮像装置および撮像システム
EP3113224B1 (en) 2015-06-12 2020-07-08 Canon Kabushiki Kaisha Imaging apparatus, method of manufacturing the same, and camera
US10978489B2 (en) * 2015-07-24 2021-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display panel, method for manufacturing semiconductor device, method for manufacturing display panel, and information processing device
JP2017037907A (ja) * 2015-08-07 2017-02-16 ルネサスエレクトロニクス株式会社 撮像装置およびその製造方法
JP2017045873A (ja) * 2015-08-27 2017-03-02 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
JP2017059563A (ja) * 2015-09-14 2017-03-23 ルネサスエレクトロニクス株式会社 撮像素子
JP2017085065A (ja) * 2015-10-30 2017-05-18 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2018006443A (ja) * 2016-06-29 2018-01-11 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2018088495A (ja) * 2016-11-29 2018-06-07 キヤノン株式会社 半導体装置および半導体装置の製造方法
WO2019175704A1 (ja) 2018-03-16 2019-09-19 株式会社半導体エネルギー研究所 電気モジュール、表示パネル、表示装置、入出力装置、情報処理装置、電気モジュールの作製方法
WO2021152943A1 (ja) * 2020-01-30 2021-08-05 パナソニックＩｐマネジメント株式会社 撮像装置
WO2023276744A1 (ja) * 2021-06-30 2023-01-05 パナソニックＩｐマネジメント株式会社 撮像装置及びその製造方法
WO2025047500A1 (ja) * 2023-08-31 2025-03-06 ソニーセミコンダクタソリューションズ株式会社 撮像装置、電子機器、及び、撮像装置の製造方法

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3288796B2 (ja) 1993-03-15 2002-06-04 株式会社東芝 半導体装置
JPH104145A (ja) 1996-06-18 1998-01-06 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP4308341B2 (ja) 1998-05-25 2009-08-05 日本テキサス・インスツルメンツ株式会社 半導体装置及びその製造方法
JP3264265B2 (ja) 1999-03-12 2002-03-11 日本電気株式会社 Ｃｍｏｓ半導体装置及びその製造方法
JP2002305196A (ja) * 2001-04-09 2002-10-18 Toshiba Corp 半導体装置の製造方法
US6773999B2 (en) 2001-07-18 2004-08-10 Matsushita Electric Industrial Co., Ltd. Method for treating thick and thin gate insulating film with nitrogen plasma
JP2003282567A (ja) * 2002-03-26 2003-10-03 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び半導体装置
JP4128396B2 (ja) 2002-06-07 2008-07-30 株式会社ルネサステクノロジ 半導体装置の製造方法
TWI289905B (en) * 2002-07-23 2007-11-11 Fujitsu Ltd Image sensor and image sensor module
US7405757B2 (en) 2002-07-23 2008-07-29 Fujitsu Limited Image sensor and image sensor module
JP2004241755A (ja) * 2003-01-15 2004-08-26 Renesas Technology Corp 半導体装置
JP2004266040A (ja) * 2003-02-28 2004-09-24 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び半導体製造装置
JP4135541B2 (ja) * 2003-03-26 2008-08-20 ソニー株式会社 プラズマ表面処理方法
JP4485754B2 (ja) * 2003-04-08 2010-06-23 パナソニック株式会社 半導体装置の製造方法
JP4190940B2 (ja) 2003-05-13 2008-12-03 エルピーダメモリ株式会社 半導体装置の製造方法
TWI220654B (en) 2003-07-02 2004-09-01 Ind Tech Res Inst Adjustable whirlpool electrostatic filter
JP4175649B2 (ja) * 2004-07-22 2008-11-05 松下電器産業株式会社 半導体装置
US7214631B2 (en) * 2005-01-31 2007-05-08 United Microelectronics Corp. Method of forming gate dielectric layer
US20080296644A1 (en) * 2005-05-02 2008-12-04 Samsung Electronics Co., Ltd. Cmos image sensors and methods of fabricating same
DE102006017281A1 (de) 2005-05-02 2006-11-16 Samsung Electronics Co., Ltd., Suwon CMOS-Bildsensoren und Verfahren zum Herstellen derselben
KR100632954B1 (ko) * 2005-05-06 2006-10-12 삼성전자주식회사 씨모스 이미지센서 및 그 제조방법
JP4954508B2 (ja) * 2005-08-05 2012-06-20 パナソニック株式会社 半導体装置
JPWO2007064048A1 (ja) 2005-12-02 2009-05-14 日本電気株式会社 半導体記憶装置、その駆動方法およびその製造方法
US7544533B2 (en) * 2006-01-09 2009-06-09 Aptina Imaging Corporation Method and apparatus for providing an integrated circuit having p and n doped gates
JP2007317741A (ja) 2006-05-23 2007-12-06 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
CN101620994B (zh) 2008-06-30 2011-01-12 中芯国际集成电路制造(北京)有限公司 掺杂栅介质层、多晶硅层及叠层顶层的最小厚度确定方法
JP5446281B2 (ja) 2008-08-01 2014-03-19 ソニー株式会社 固体撮像装置、その製造方法および撮像装置
JP5538922B2 (ja) * 2009-02-06 2014-07-02 キヤノン株式会社 固体撮像装置の製造方法
US8450221B2 (en) * 2010-08-04 2013-05-28 Texas Instruments Incorporated Method of forming MOS transistors including SiON gate dielectric with enhanced nitrogen concentration at its sidewalls
CN201845782U (zh) 2010-10-19 2011-05-25 格科微电子（上海）有限公司 Mos晶体管及cmos图像传感器

Also Published As

Publication number Publication date
CN103219348A (zh) 2013-07-24
US20130181268A1 (en) 2013-07-18
US20160322409A1 (en) 2016-11-03
CN103219348B (zh) 2016-08-10
JP2013149741A (ja) 2013-08-01
US9412773B2 (en) 2016-08-09
US10103186B2 (en) 2018-10-16

Similar Documents

Publication Publication Date Title
JP6083930B2 (ja) 光電変換装置および撮像システム、光電変換装置の製造方法
JP5446281B2 (ja) 固体撮像装置、その製造方法および撮像装置
CN101640209B (zh) 固体摄像器件、其制造方法以及摄像装置
US8431880B2 (en) Solid-state imaging device, method of producing the same, and imaging device
JP2015109343A (ja) 半導体装置の製造方法
US10777596B2 (en) Imaging apparatus, method of manufacturing the same, and device
US10916574B2 (en) Imaging device, method of manufacturing the same, and apparatus
JP6362121B2 (ja) 光電変換装置および撮像システム、光電変換装置の製造方法
KR101569532B1 (ko) 고체 촬상 장치, 그 제조 방법 및 촬상 장치
JP6781745B2 (ja) 撮像装置の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150119

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150119

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20151015

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20151027

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151224

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160614

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160808

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20161227

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170124

R151 Written notification of patent or utility model registration

Ref document number: 6083930

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151