JP6068743B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6068743B2 JP6068743B2 JP2012143899A JP2012143899A JP6068743B2 JP 6068743 B2 JP6068743 B2 JP 6068743B2 JP 2012143899 A JP2012143899 A JP 2012143899A JP 2012143899 A JP2012143899 A JP 2012143899A JP 6068743 B2 JP6068743 B2 JP 6068743B2
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- oxide semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims description 218
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 181
- 229910052757 nitrogen Inorganic materials 0.000 claims description 91
- 229910052760 oxygen Inorganic materials 0.000 claims description 46
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 44
- 239000001301 oxygen Substances 0.000 claims description 44
- 230000015572 biosynthetic process Effects 0.000 claims description 25
- 238000004804 winding Methods 0.000 claims 2
- 239000011701 zinc Substances 0.000 description 77
- 239000011797 cavity material Substances 0.000 description 40
- 229910052751 metal Inorganic materials 0.000 description 31
- 125000004430 oxygen atom Chemical group O* 0.000 description 30
- 239000002184 metal Substances 0.000 description 29
- 125000004429 atom Chemical group 0.000 description 24
- 239000001257 hydrogen Substances 0.000 description 24
- 229910052739 hydrogen Inorganic materials 0.000 description 24
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 21
- VUFNLQXQSDUXKB-DOFZRALJSA-N 2-[4-[4-[bis(2-chloroethyl)amino]phenyl]butanoyloxy]ethyl (5z,8z,11z,14z)-icosa-5,8,11,14-tetraenoate Chemical compound CCCCC\C=C/C\C=C/C\C=C/C\C=C/CCCC(=O)OCCOC(=O)CCCC1=CC=C(N(CCCl)CCCl)C=C1 VUFNLQXQSDUXKB-DOFZRALJSA-N 0.000 description 16
- 239000013078 crystal Substances 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 12
- 229910020994 Sn-Zn Inorganic materials 0.000 description 11
- 229910009069 Sn—Zn Inorganic materials 0.000 description 11
- 229910052733 gallium Inorganic materials 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 229910052738 indium Inorganic materials 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 230000001133 acceleration Effects 0.000 description 8
- 229910052725 zinc Inorganic materials 0.000 description 7
- 229910018137 Al-Zn Inorganic materials 0.000 description 6
- 229910018573 Al—Zn Inorganic materials 0.000 description 6
- 239000003381 stabilizer Substances 0.000 description 5
- 229910020868 Sn-Ga-Zn Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 229910018120 Al-Ga-Zn Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- -1 lanthanum (La) Chemical class 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910020833 Sn-Al-Zn Inorganic materials 0.000 description 2
- 229910020944 Sn-Mg Inorganic materials 0.000 description 2
- 229910005728 SnZn Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910009369 Zn Mg Inorganic materials 0.000 description 2
- 229910007573 Zn-Mg Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Description
<酸化物半導体トランジスタの構造>
本実施の形態の酸化物半導体トランジスタの構成を図1に示す。図1に示す酸化物半導体トランジスタ201は、基板200上に下地絶縁膜202が設けられ、下地絶縁膜202上に形成された、活性層として機能する酸化物半導体層203と、酸化物半導体層203上に形成されたソース電極及びドレイン電極として機能する電極204a及び電極204bと、酸化物半導体層203、電極204a及び電極204b上のゲート絶縁膜206と、ゲート絶縁膜206を挟んで酸化物半導体層203と重畳する位置に設けられたゲート電極207とを有する。
図1に示す酸化物半導体トランジスタ201の作製方法を以下に示す。
上述した酸化物半導体トランジスタ201において、下層211al及び下層211blは、窒素を含まない領域、あるいは上層211au及び上層211buと比較して極めて窒素濃度が低い領域である。
本実施の形態では、開示される発明の一様態で用いることのできる酸化物半導体層について説明する。
201 酸化物半導体トランジスタ
202 下地絶縁膜
203 酸化物半導体層
204a 電極
204b 電極
206 ゲート絶縁膜
207 ゲート電極
208a 領域
208b 領域
209 チャネル形成領域
210 窒素
211a 領域
211au 上層
211al 下層
211b 領域
211bu 上層
211bl 下層
212 絶縁膜
213 配線
214 配線
215 配線
221 酸化物半導体トランジスタ
Claims (4)
- 第1の領域と、第2の領域と、チャネル形成領域とを有する酸化物半導体層と、
酸化物半導体層上に設けられたゲート絶縁膜と、
前記チャネル形成領域上に、前記ゲート絶縁膜を挟んで設けられたゲート電極と、
前記第1の領域上に設けられたソース電極又はドレイン電極と、を有し、
前記第2の領域は、前記チャネル形成領域と前記第1の領域との間に有し、
前記第2の領域の上層は、前記第2の領域の下層、前記第1の領域及び前記チャネル形成領域よりも窒素を多く含んでいることを特徴とする半導体装置。 - 請求項1において、
前記第2の領域の上層の窒素濃度は、1×1021cm−3以上であることを特徴とする半導体装置。 - 第1の領域と、第2の領域と、チャネル形成領域とを有する酸化物半導体層と、
酸化物半導体層上に設けられたゲート絶縁膜と、
前記チャネル形成領域上に、前記ゲート絶縁膜を挟んで設けられたゲート電極と、
前記第1の領域上に設けられたソース電極又はドレイン電極と、を有し、
前記第2の領域は、前記チャネル形成領域と前記第1の領域との間に有し、
前記第2の領域の上層は、前記第2の領域の下層、前記第1の領域及び前記チャネル形成領域よりも酸素を多く含んでいることを特徴とする半導体装置。 - 請求項3において、
前記第2の領域の上層の酸素濃度は、1×1021cm−3以上であることを特徴とする半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012143899A JP6068743B2 (ja) | 2011-07-01 | 2012-06-27 | 半導体装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011147520 | 2011-07-01 | ||
JP2011147520 | 2011-07-01 | ||
JP2012143899A JP6068743B2 (ja) | 2011-07-01 | 2012-06-27 | 半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013033950A JP2013033950A (ja) | 2013-02-14 |
JP2013033950A5 JP2013033950A5 (ja) | 2015-05-21 |
JP6068743B2 true JP6068743B2 (ja) | 2017-01-25 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2012143899A Active JP6068743B2 (ja) | 2011-07-01 | 2012-06-27 | 半導体装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9130044B2 (ja) |
JP (1) | JP6068743B2 (ja) |
TW (2) | TWI545762B (ja) |
WO (1) | WO2013005380A1 (ja) |
Families Citing this family (5)
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WO2011162104A1 (en) | 2010-06-25 | 2011-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving the same |
KR101900525B1 (ko) | 2011-03-18 | 2018-09-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막, 반도체 장치, 및 반도체 장치의 제작 방법 |
CN105931967B (zh) | 2011-04-27 | 2019-05-03 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
US9543447B2 (en) | 2013-03-08 | 2017-01-10 | Sumitomo Metal Mining Co., Ltd. | Oxynitride semiconductor thin film |
US10043917B2 (en) | 2016-03-03 | 2018-08-07 | United Microelectronics Corp. | Oxide semiconductor device and method of manufacturing the same |
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