JP6067740B2 - フレキシブルデバイスの製造方法、積層体及びその製造方法、並びに、樹脂組成物 - Google Patents

フレキシブルデバイスの製造方法、積層体及びその製造方法、並びに、樹脂組成物 Download PDF

Info

Publication number
JP6067740B2
JP6067740B2 JP2014545741A JP2014545741A JP6067740B2 JP 6067740 B2 JP6067740 B2 JP 6067740B2 JP 2014545741 A JP2014545741 A JP 2014545741A JP 2014545741 A JP2014545741 A JP 2014545741A JP 6067740 B2 JP6067740 B2 JP 6067740B2
Authority
JP
Japan
Prior art keywords
group
polyimide
amino
substrate
resin layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2014545741A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2014073591A1 (ja
Inventor
大和 齋藤
大和 齋藤
昭宏 和泉
昭宏 和泉
省三 高田
省三 高田
土井　一郎
一郎 土井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Kasei Corp
Original Assignee
Asahi Kasei Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Kasei Corp filed Critical Asahi Kasei Corp
Publication of JPWO2014073591A1 publication Critical patent/JPWO2014073591A1/ja
Application granted granted Critical
Publication of JP6067740B2 publication Critical patent/JP6067740B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/34—Layered products comprising a layer of synthetic resin comprising polyamides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1039—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors comprising halogen-containing substituents
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1046—Polyimides containing oxygen in the form of ether bonds in the main chain
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1046—Polyimides containing oxygen in the form of ether bonds in the main chain
    • C08G73/1053—Polyimides containing oxygen in the form of ether bonds in the main chain with oxygen only in the tetracarboxylic moiety
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • C08G73/1071—Wholly aromatic polyimides containing oxygen in the form of ether bonds in the main chain
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
    • C09D179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09D179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2379/00—Other polymers having nitrogen, with or without oxygen or carbon only, in the main chain
    • B32B2379/08—Polyimides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/50—Improvements relating to the production of bulk chemicals
    • Y02P20/582—Recycling of unreacted starting or intermediate materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Laminated Bodies (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
JP2014545741A 2012-11-08 2013-11-07 フレキシブルデバイスの製造方法、積層体及びその製造方法、並びに、樹脂組成物 Expired - Fee Related JP6067740B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012246473 2012-11-08
JP2012246473 2012-11-08
PCT/JP2013/080080 WO2014073591A1 (ja) 2012-11-08 2013-11-07 フレキシブルデバイス用基板、フレキシブルデバイス及びその製造方法、積層体及びその製造方法、並びに、樹脂組成物

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016149643A Division JP6259028B2 (ja) 2012-11-08 2016-07-29 フレキシブルデバイス用基板、フレキシブルデバイス及びフレキシブルデバイス用基板の製造方法

Publications (2)

Publication Number Publication Date
JPWO2014073591A1 JPWO2014073591A1 (ja) 2016-09-08
JP6067740B2 true JP6067740B2 (ja) 2017-01-25

Family

ID=50684692

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2014545741A Expired - Fee Related JP6067740B2 (ja) 2012-11-08 2013-11-07 フレキシブルデバイスの製造方法、積層体及びその製造方法、並びに、樹脂組成物
JP2016149643A Expired - Fee Related JP6259028B2 (ja) 2012-11-08 2016-07-29 フレキシブルデバイス用基板、フレキシブルデバイス及びフレキシブルデバイス用基板の製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2016149643A Expired - Fee Related JP6259028B2 (ja) 2012-11-08 2016-07-29 フレキシブルデバイス用基板、フレキシブルデバイス及びフレキシブルデバイス用基板の製造方法

Country Status (5)

Country Link
JP (2) JP6067740B2 (ko)
KR (1) KR101709422B1 (ko)
CN (1) CN104769021B (ko)
TW (2) TWI555797B (ko)
WO (1) WO2014073591A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200091865A (ko) 2017-12-04 2020-07-31 유니티카 가부시끼가이샤 유리 기판에의 도공용 용액

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104870565B (zh) * 2012-12-21 2019-04-26 日立化成杜邦微系统股份有限公司 聚酰亚胺前体树脂组合物
CN105263709B (zh) * 2013-05-28 2017-05-24 旭硝子株式会社 带树脂层支撑基材及其制造方法、玻璃层叠体及其制造方法、电子设备的制造方法
JP6244871B2 (ja) * 2013-12-13 2017-12-13 日立化成デュポンマイクロシステムズ株式会社 ポリイミド前駆体樹脂組成物
JP2017113880A (ja) * 2014-04-28 2017-06-29 旭硝子株式会社 ガラス積層体、樹脂層付きガラス基板、樹脂層付き支持基材
JP6336061B2 (ja) * 2014-05-24 2018-06-06 株式会社カネカ アルコキシシラン変性ポリアミド酸溶液、それを用いた積層体及びフレキシブルデバイス、並びにポリイミドフィルム及び積層体の製造方法
JP6473932B2 (ja) * 2014-05-29 2019-02-27 パナソニックＩｐマネジメント株式会社 支持基板付き樹脂基板、及び、その製造方法、並びに、その樹脂基板を用いた電子デバイス
JP6420064B2 (ja) * 2014-06-03 2018-11-07 旭化成株式会社 ポリイミド前駆体組成物及びポリイミドフィルム
JP6412727B2 (ja) * 2014-06-30 2018-10-24 東京応化工業株式会社 樹脂基板の製造方法および表示デバイスの製造方法
KR101992525B1 (ko) 2014-07-17 2019-06-24 아사히 가세이 가부시키가이샤 수지 전구체 및 그것을 함유하는 수지 조성물, 폴리이미드 수지막, 수지 필름 및 그 제조 방법
JP6627317B2 (ja) * 2014-08-06 2020-01-08 三菱ケミカル株式会社 ガラスフィルム積層体
TWI607868B (zh) * 2014-08-29 2017-12-11 達邁科技股份有限公司 聚醯亞胺膜及其製成和組合方法
JP6137416B2 (ja) * 2014-09-26 2017-05-31 住友ベークライト株式会社 素子積層フィルムの製造方法
JP6771880B2 (ja) * 2014-12-18 2020-10-21 株式会社日本触媒 樹脂組成物及び積層体
TWI593753B (zh) * 2015-03-11 2017-08-01 Taimide Tech Incoporation Polyimide film and method of forming a radial circuit board from the film
US10711105B2 (en) 2015-03-13 2020-07-14 Asahi Kasei Kabushiki Kaisha Polyimide precursor resin composition
JP6705444B2 (ja) * 2015-03-31 2020-06-03 日産化学株式会社 剥離層
KR102103157B1 (ko) 2015-04-17 2020-04-22 아사히 가세이 가부시키가이샤 수지 조성물, 폴리이미드 수지막, 및 그 제조 방법
KR102511463B1 (ko) * 2016-03-31 2023-03-16 동우 화인켐 주식회사 필름형 박막 트랜지스터 어레이와 그를 포함하는 플렉서블 액정 표시 장치 및 플렉서블 액정 표시 장치 제조방법
TWI729120B (zh) * 2016-05-16 2021-06-01 美商道康寧公司 包括至少一氟矽化合物之離型層
TWI753868B (zh) * 2016-08-05 2022-02-01 日商半導體能源研究所股份有限公司 剝離方法、顯示裝置、顯示模組及電子裝置
JP7143210B2 (ja) * 2016-10-07 2022-09-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US10275062B2 (en) 2016-10-14 2019-04-30 Industrial Technology Research Institute Flexible electronic device having barrier planarization layer including nitrogen-rich region and oxygen-rich region
CN107958879B (zh) * 2016-10-14 2020-06-05 财团法人工业技术研究院 柔性电子装置
CN110073499B (zh) 2016-11-15 2024-04-05 信越化学工业株式会社 高效率太阳能电池及高效率太阳能电池的制造方法
KR102574758B1 (ko) * 2017-03-30 2023-09-06 닛산 가가쿠 가부시키가이샤 박리층 형성용 조성물 및 박리층
WO2018221374A1 (ja) * 2017-05-29 2018-12-06 東洋紡株式会社 ポリイミドフィルムと無機基板の積層体
CN109427911B (zh) * 2017-08-31 2021-12-14 昆山国显光电有限公司 一种柔性薄膜晶体管及其制备方法
JP7363019B2 (ja) * 2017-09-27 2023-10-18 大日本印刷株式会社 ディスプレイ用部材、タッチパネル部材、液晶表示装置、及び有機エレクトロルミネッセンス表示装置
US20190127529A1 (en) * 2017-11-02 2019-05-02 Honeywell International Inc. Polyimide for flexible displays, flexible displays, and methods for making flexible displays
WO2019163830A1 (ja) * 2018-02-23 2019-08-29 三菱瓦斯化学株式会社 ポリイミド樹脂、ポリイミドワニス及びポリイミドフィルム
US11898009B2 (en) 2018-04-20 2024-02-13 Ube Corporation Polyimide, laminate, and electronic device including same
CN108594348B (zh) * 2018-04-27 2021-10-12 京东方科技集团股份有限公司 偏光片及其制作方法、触控显示装置
JP6530125B1 (ja) * 2018-04-27 2019-06-12 住友化学株式会社 光学フィルム
CN108615807A (zh) * 2018-05-22 2018-10-02 华中科技大学 一种量程和灵敏度可调的柔性传感器及其制备方法
JP6837032B2 (ja) * 2018-05-30 2021-03-03 双葉電子工業株式会社 高分子基板の製造方法及び電子装置の製造方法
JP7116889B2 (ja) * 2018-08-20 2022-08-12 東洋紡株式会社 耐熱高分子フィルム、表面処理された耐熱高分子フィルムの製造方法、及び、耐熱高分子フィルムロール
JP7461626B2 (ja) * 2018-12-04 2024-04-04 ユニチカ株式会社 ポリアミック酸溶液およびこれを用いた積層体の製造方法
WO2020138743A1 (ko) * 2018-12-24 2020-07-02 에스케이씨코오롱피아이 주식회사 디스플레이 기판 제조용 폴리아믹산 조성물 및 이를 이용하여 디스플레이용 기판을 제조하는 방법
JP2020128527A (ja) * 2019-02-06 2020-08-27 ユニチカ株式会社 ガラス基板への塗工用ポリアミック酸溶液
JP7306835B2 (ja) * 2019-02-19 2023-07-11 株式会社ジャパンディスプレイ 樹脂基板を有する装置及びその製造方法
JP2019189872A (ja) * 2019-06-06 2019-10-31 宇部興産株式会社 ポリイミド、積層体およびそれらを含む電子デバイス
JPWO2021039442A1 (ko) * 2019-08-28 2021-03-04
WO2022107559A1 (ja) 2020-11-20 2022-05-27 日本電気硝子株式会社 電子デバイスの製造方法及びガラス板群
WO2022210109A1 (ja) 2021-03-31 2022-10-06 三菱瓦斯化学株式会社 ポリイミド樹脂組成物、ポリイミド前駆体組成物、ワニス、及びポリイミドフィルム
CN114685791B (zh) * 2022-03-02 2023-10-03 江苏环峰电工材料有限公司 一种结构可控的聚酰亚胺聚合物及其制备方法
CN114706240A (zh) * 2022-04-15 2022-07-05 邯郸市富亚电子技术有限公司 一种增强柔性液晶屏pi涂布效果的工艺
JP7223902B1 (ja) 2022-06-16 2023-02-16 住友化学株式会社 積層体、樹脂組成物、及び表示装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001139808A (ja) 1999-11-11 2001-05-22 Unitika Ltd ポリイミド前駆体溶液及びそれから得られるポリイミド被膜
JP4070515B2 (ja) * 2002-06-05 2008-04-02 旭化成エレクトロニクス株式会社 耐熱性樹脂前駆体組成物
JP2004170611A (ja) 2002-11-19 2004-06-17 Hitachi Chemical Dupont Microsystems Ltd ポジ型感光性樹脂組成物、レリーフパターンの製造方法及び電子部品
JP4931644B2 (ja) 2007-03-02 2012-05-16 旭化成イーマテリアルズ株式会社 感光性樹脂組成物
JP2008231383A (ja) * 2007-03-23 2008-10-02 Fujifilm Corp 層間絶縁膜用組成物
JP2008255141A (ja) * 2007-03-31 2008-10-23 Ube Ind Ltd ポリイミドフィルムの製造方法およびポリイミドフィルム
WO2009037797A1 (ja) 2007-09-20 2009-03-26 Sharp Kabushiki Kaisha 表示装置の製造方法及び積層構造体
JP5130866B2 (ja) 2007-10-23 2013-01-30 Ｊｓｒ株式会社 樹脂組成物
JP2010071145A (ja) * 2008-09-17 2010-04-02 Nippon Pisuko:Kk 流体ポンプ
CN102239553B (zh) 2008-12-05 2014-08-27 皇家飞利浦电子股份有限公司 具有塑料基板的电子装置
SG173468A1 (en) * 2009-01-29 2011-09-29 Toray Industries Resin composition and display device formed using same
JP2010202729A (ja) * 2009-03-02 2010-09-16 Hitachi Chemical Dupont Microsystems Ltd フレキシブルデバイス基板用ポリイミド前駆体樹脂組成物及びそれを用いたフレキシブルデバイスの製造方法、フレキシブルデバイス
JP5732740B2 (ja) * 2009-09-30 2015-06-10 大日本印刷株式会社 フレキシブルデバイス用薄膜トランジスタ基板およびフレキシブルデバイス
US20120244352A1 (en) * 2009-12-09 2012-09-27 Ube Industries, Ltd. Process for producing polyimide film, and polyimide film
JP2011222780A (ja) * 2010-04-09 2011-11-04 Dainippon Printing Co Ltd 薄膜トランジスタ基板および薄膜トランジスタの製造方法
JP5545032B2 (ja) 2010-05-25 2014-07-09 東洋紡株式会社 積層体、電気回路付加積層板、半導体付加積層体およびその製造方法
JP5531781B2 (ja) * 2010-05-25 2014-06-25 東洋紡株式会社 積層体、電気回路付加積層板、半導体付加積層体およびその製造方法
JP5747822B2 (ja) * 2010-09-28 2015-07-15 東レ株式会社 樹脂組成物およびその製造方法
JP2012102155A (ja) * 2010-11-05 2012-05-31 Kaneka Corp ポリイミドフィルム、積層体、及びフレキシブルデバイス
JP5964607B2 (ja) * 2012-02-14 2016-08-03 株式会社カネカ 剥離層付き支持体、基板構造、および電子デバイスの製造方法
JP2013232314A (ja) * 2012-04-27 2013-11-14 Jsr Corp 感放射線性樹脂組成物、絶縁膜および有機ｅｌ素子
JP2014009305A (ja) * 2012-06-29 2014-01-20 Asahi Kasei E-Materials Corp 樹脂組成物、積層体及び積層体の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200091865A (ko) 2017-12-04 2020-07-31 유니티카 가부시끼가이샤 유리 기판에의 도공용 용액

Also Published As

Publication number Publication date
JPWO2014073591A1 (ja) 2016-09-08
TW201431955A (zh) 2014-08-16
CN104769021B (zh) 2017-10-10
KR20150068442A (ko) 2015-06-19
JP2016225638A (ja) 2016-12-28
KR101709422B1 (ko) 2017-02-22
TWI555797B (zh) 2016-11-01
WO2014073591A1 (ja) 2014-05-15
JP6259028B2 (ja) 2018-01-10
CN104769021A (zh) 2015-07-08
TW201542691A (zh) 2015-11-16
TWI529215B (zh) 2016-04-11

Similar Documents

Publication Publication Date Title
JP6259028B2 (ja) フレキシブルデバイス用基板、フレキシブルデバイス及びフレキシブルデバイス用基板の製造方法
TWI660005B (zh) 聚醯亞胺前驅體樹脂組合物
TWI813543B (zh) 聚醯亞胺前驅物、聚醯亞胺及透明聚醯亞胺膜的製造方法
JP6939941B2 (ja) フレキシブル電子デバイスの製造方法
CN107263892B (zh) 柔性基板的制造方法
US10334738B2 (en) Flexible substrate assembly and its application for fabricating flexible printed circuits
JP2014009305A (ja) 樹脂組成物、積層体及び積層体の製造方法
JP2014022459A (ja) 積層体及びフレキシブルデバイスの製造方法
TWI791056B (zh) 聚醯亞胺前體及聚醯亞胺、積層體、可撓性裝置
KR102532485B1 (ko) 수지 조성물, 수지막의 제조 방법 및 전자 디바이스의 제조 방법
TWI786055B (zh) 聚醯亞胺前體及由所述聚醯亞胺前體生成的聚醯亞胺
JP6705444B2 (ja) 剥離層
TW201736145A (zh) 層合體之製造方法、及其之利用
TWI773715B (zh) 附保護層的樹脂基板之製造方法與可撓性電子裝置之製造方法
JP7506152B2 (ja) 樹脂組成物
JP7371813B2 (ja) 積層基板、積層体、積層体の製造方法、電子デバイス用部材付き積層体、電子デバイスの製造方法
JP6897690B2 (ja) 剥離層の製造方法
US20230167252A1 (en) Resin film, method for producing same, resin composition, display and method for producing same
JPWO2020175167A1 (ja) ポリアミド酸樹脂組成物、ポリイミド樹脂膜およびその製造方法、積層体、ならびに、電子デバイスおよびその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160729

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20161206

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20161221

R150 Certificate of patent or registration of utility model

Ref document number: 6067740

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees