JP6060672B2 - 液体噴射ヘッド、液体噴射装置、圧電素子及びその製造方法 - Google Patents
液体噴射ヘッド、液体噴射装置、圧電素子及びその製造方法 Download PDFInfo
- Publication number
- JP6060672B2 JP6060672B2 JP2012277758A JP2012277758A JP6060672B2 JP 6060672 B2 JP6060672 B2 JP 6060672B2 JP 2012277758 A JP2012277758 A JP 2012277758A JP 2012277758 A JP2012277758 A JP 2012277758A JP 6060672 B2 JP6060672 B2 JP 6060672B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- piezoelectric
- insulating film
- titanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000007788 liquid Substances 0.000 title claims description 41
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims description 68
- 239000010936 titanium Substances 0.000 claims description 66
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 62
- 229910052719 titanium Inorganic materials 0.000 claims description 61
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 22
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 20
- 238000000059 patterning Methods 0.000 claims description 19
- 239000012212 insulator Substances 0.000 claims description 15
- 238000001039 wet etching Methods 0.000 claims description 15
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 13
- 239000011651 chromium Substances 0.000 claims description 12
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052804 chromium Inorganic materials 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 238000004380 ashing Methods 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 352
- 239000000463 material Substances 0.000 description 39
- 238000000034 method Methods 0.000 description 35
- 239000013078 crystal Substances 0.000 description 23
- 238000005530 etching Methods 0.000 description 21
- 230000001681 protective effect Effects 0.000 description 21
- 230000007797 corrosion Effects 0.000 description 20
- 238000005260 corrosion Methods 0.000 description 20
- 239000002253 acid Substances 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 229910052741 iridium Inorganic materials 0.000 description 14
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 14
- 238000004891 communication Methods 0.000 description 10
- 239000010931 gold Substances 0.000 description 10
- 229910018487 Ni—Cr Inorganic materials 0.000 description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 8
- 238000005240 physical vapour deposition Methods 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 230000006378 damage Effects 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000007791 liquid phase Substances 0.000 description 5
- 238000005192 partition Methods 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 229910052726 zirconium Inorganic materials 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 229910052746 lanthanum Inorganic materials 0.000 description 4
- RVLXVXJAKUJOMY-UHFFFAOYSA-N lanthanum;oxonickel Chemical compound [La].[Ni]=O RVLXVXJAKUJOMY-UHFFFAOYSA-N 0.000 description 4
- 238000000608 laser ablation Methods 0.000 description 4
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 229910052700 potassium Inorganic materials 0.000 description 4
- 238000003303 reheating Methods 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 238000003980 solgel method Methods 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 229910002115 bismuth titanate Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000000018 DNA microarray Methods 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- YPQJHZKJHIBJAP-UHFFFAOYSA-N [K].[Bi] Chemical compound [K].[Bi] YPQJHZKJHIBJAP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- FSAJRXGMUISOIW-UHFFFAOYSA-N bismuth sodium Chemical compound [Na].[Bi] FSAJRXGMUISOIW-UHFFFAOYSA-N 0.000 description 1
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- KTMLBHVBHVXWKQ-UHFFFAOYSA-N dibismuth dioxido(dioxo)manganese Chemical compound [Bi+3].[Bi+3].[O-][Mn]([O-])(=O)=O.[O-][Mn]([O-])(=O)=O.[O-][Mn]([O-])(=O)=O KTMLBHVBHVXWKQ-UHFFFAOYSA-N 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910002112 ferroelectric ceramic material Inorganic materials 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- 239000002648 laminated material Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1607—Production of print heads with piezoelectric elements
- B41J2/161—Production of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1623—Manufacturing processes bonding and adhesion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1628—Manufacturing processes etching dry etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1629—Manufacturing processes etching wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1632—Manufacturing processes machining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1632—Manufacturing processes machining
- B41J2/1634—Manufacturing processes machining laser machining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1643—Manufacturing processes thin film formation thin film formation by plating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1645—Manufacturing processes thin film formation thin film formation by spincoating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/875—Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
- B41J2002/14241—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm having a cover around the piezoelectric thin film element
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2002/14362—Assembling elements of heads
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2002/14491—Electrical connection
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/03—Specific materials used
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/18—Electrical connection established using vias
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Description
かかる態様では、絶縁膜を設けることで、電極が覆われているため、配線層をウェットエッチングする際の酸のエッチング液によって密着層と電極の間に電蝕が発生するのを抑制することができる。したがって、電極及び配線層の剥離を抑制することができる。
かかる態様では、電極や配線の剥離を抑制して信頼性の高い液体噴射装置を実現できる。
かかる態様では、絶縁膜を設けることで、電極が覆われているため、配線層をウェットエッチングする際の酸のエッチング液によって密着層と電極の間に電蝕が発生するのを抑制することができる。したがって、配線層の剥離を抑制することができる。
かかる態様では、絶縁膜を設けることで、電極が覆われているため、配線層をウェットエッチングする際の酸のエッチング液によって密着層と電極の間に電蝕が発生するのを抑制することができる。したがって、配線層の剥離を抑制することができる。
(実施形態1)
図1は、本発明の実施形態1に係る液体噴射ヘッドの一例であるインクジェット式記録ヘッドの斜視図であり、図2は、インクジェット式記録ヘッドの流路形成基板の平面図であり、図3は図2のA−A′線に準ずる断面図及び拡大断面図であり、図4は図2のB−B′線に準ずる断面図である。
図10は、本発明の実施形態2に係る液体噴射ヘッドの一例であるインクジェット式記録ヘッドの要部を拡大した断面図及びそのC−C′線断面図である。なお、上述した実施形態1と同様の部材には同一の符号を付して重複する説明は省略する。
以上、本発明の各実施形態について説明したが、本発明の基本的な構成は上述したものに限定されるものではない。
Claims (6)
- 液体を噴射するノズル開口に連通する圧力発生室を有する流路形成基板と、
該流路形成基板に設けられて、圧電体層と電極と該電極に接続された配線層とを具備する圧電素子とを具備し、
前記電極は、前記流路形成基板側に設けられた第1電極と、前記圧電体層の前記流路形成基板とは反対側に設けられた第2電極とを有し、
前記配線層がニッケル、クロム、チタン及びタングステンから選択される少なくとも一種を含む密着層と、該密着層上に設けられた導電層と、を具備し、
少なくとも前記第2電極上の前記配線層と当該第2電極との間には、絶縁性を有する絶縁膜を有し、前記圧電素子の前記第2電極と前記配線層とが、前記絶縁膜に設けられたコンタクトホールを介して接続され、
前記圧電体層上に、前記配線層、前記絶縁膜、前記第2電極を厚さ方向に貫通して切断する除去部を有していることを特徴とする液体噴射ヘッド。 - 前記絶縁膜が酸化チタンであることを特徴とする請求項1に記載の液体噴射ヘッド。
- 請求項1〜2の何れか一項に記載の液体噴射ヘッドを具備することを特徴とする液体噴射装置。
- 圧電体層と、電極と、該電極に接続された配線層と、を具備し、
前記電極は、前記圧電体層上に設けられた第2電極と、前記圧電体層の前記第2電極とは反対側に設けられた第1電極とを有し、 前記配線層がニッケル、クロム、チタン及びタングステンから選択される少なくとも一種を含む密着層と、該密着層上に設けられた導電層と、を具備し、
少なくとも前記第2電極上の前記配線層と当該電極の間には、絶縁性を有する絶縁膜を有し、前記第2電極と前記配線層とが、当該絶縁膜に設けられたコンタクトホールを介して接続され、
前記圧電体層上に、前記配線層、前記絶縁膜、前記第2電極を厚さ方向に貫通して切断する除去部を有していることを特徴とする圧電素子。 - 圧電体層と、電極と、該電極に接続された配線層と、を具備し、
露出された前記電極の少なくとも前記配線層が形成される領域に絶縁性を有する絶縁膜を形成すると共に、当該絶縁膜にコンタクトホールを形成する工程と、
該絶縁膜上及び前記コンタクトホール内の前記電極上にニッケル、クロム、チタン及びタングステンから選択される少なくとも一種を含む密着層を形成する工程と、
該密着層上に導電層を形成して、密着層及び導電層を有する前記配線層を形成する工程と、
少なくとも前記密着層をウェットエッチングすることにより、前記配線層をパターニングする工程と、を具備し、
前記電極が、前記圧電体層の一方面側に設けられた第1電極と、前記圧電体層の前記第1電極とは反対の他方面側に設けられた第2電極と、を具備し、
前記第2電極が、前記圧電体層側の第1層と、該第1層の前記圧電体層とは反対側に設けられた第2層と、を具備し、
前記絶縁膜を形成する工程では、前記第2層上に亘って前記絶縁膜を形成した後、前記第2層と前記絶縁体膜とを同時にパターニングすることを特徴とする圧電素子の製造方法。 - 前記絶縁膜を形成する工程では、前記第2層上に亘ってチタンからなるチタン層を形成し、前記第2層と前記チタン層とをレジストマスクを介してエッチングしてパターニングすると共に、該レジストマスクをアッシングにより除去することで、前記チタン層を酸化させて酸化チタンからなる前記絶縁膜を形成することを特徴とする請求項5記載の圧電素子の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012277758A JP6060672B2 (ja) | 2012-12-20 | 2012-12-20 | 液体噴射ヘッド、液体噴射装置、圧電素子及びその製造方法 |
US14/101,706 US9144970B2 (en) | 2012-12-20 | 2013-12-10 | Liquid ejecting head, liquid ejecting apparatus, piezoelectric element, and method for manufacturing piezoelectric element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012277758A JP6060672B2 (ja) | 2012-12-20 | 2012-12-20 | 液体噴射ヘッド、液体噴射装置、圧電素子及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014121799A JP2014121799A (ja) | 2014-07-03 |
JP6060672B2 true JP6060672B2 (ja) | 2017-01-18 |
Family
ID=50974163
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012277758A Active JP6060672B2 (ja) | 2012-12-20 | 2012-12-20 | 液体噴射ヘッド、液体噴射装置、圧電素子及びその製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9144970B2 (ja) |
JP (1) | JP6060672B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4324653A1 (en) * | 2022-08-19 | 2024-02-21 | Toshiba TEC Kabushiki Kaisha | Liquid ejecting head and liquid ejecting apparatus |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013081022A (ja) * | 2011-10-03 | 2013-05-02 | Nippon Dempa Kogyo Co Ltd | 水晶振動子及びその製造方法 |
JP6379808B2 (ja) * | 2014-07-30 | 2018-08-29 | セイコーエプソン株式会社 | 圧電素子の製造方法、液体吐出ヘッドの製造方法、および液体吐出装置の製造方法 |
CN105375812A (zh) | 2014-08-13 | 2016-03-02 | 精工爱普生株式会社 | 压电驱动装置及其驱动方法、机器人及其驱动方法 |
JP6413461B2 (ja) * | 2014-08-13 | 2018-10-31 | セイコーエプソン株式会社 | 圧電駆動装置及びその駆動方法、ロボット及びその駆動方法 |
JP6402547B2 (ja) * | 2014-09-08 | 2018-10-10 | セイコーエプソン株式会社 | 圧電素子、液体噴射ヘッド、及び、液体噴射装置 |
JP6413803B2 (ja) * | 2015-01-29 | 2018-10-31 | セイコーエプソン株式会社 | 液体噴射ヘッドおよび液体噴射装置 |
JP6443146B2 (ja) * | 2015-03-16 | 2018-12-26 | セイコーエプソン株式会社 | 電子デバイス |
US20170092838A1 (en) * | 2015-09-29 | 2017-03-30 | Seiko Epson Corporation | Piezoelectric driving apparatus, method of manufacturing the same, motor, robot, and pump |
DE112016004905B4 (de) * | 2015-10-27 | 2023-07-06 | Murata Manufacturing Co., Ltd. | Piezoelektrische Vorrichtung und Verfahren zum Herstellen einer piezoelektrischen Vorrichtung |
JP6641943B2 (ja) * | 2015-12-03 | 2020-02-05 | セイコーエプソン株式会社 | モーター用圧電駆動装置およびその製造方法、モーター、ロボット、ならびにポンプ |
CN106384782A (zh) * | 2016-11-02 | 2017-02-08 | 清华大学 | 一种多层金属电极材料及其制备方法 |
JP6891506B2 (ja) | 2017-01-17 | 2021-06-18 | セイコーエプソン株式会社 | 圧電素子、圧電アクチュエーター、超音波探触子、超音波装置、電子機器、液体噴射ヘッド、及び液体噴射装置 |
CN109318594B (zh) * | 2017-07-31 | 2020-09-01 | 精工爱普生株式会社 | 液体喷射头、液体喷射装置以及压电器件 |
JP7009818B2 (ja) * | 2017-07-31 | 2022-01-26 | セイコーエプソン株式会社 | 液体噴射ヘッドおよび液体噴射装置 |
US10672960B2 (en) | 2017-10-19 | 2020-06-02 | Lumileds Llc | Light emitting device package with a coating layer |
CN110239221B (zh) * | 2018-03-09 | 2021-03-09 | 上海锐尔发数码科技有限公司 | 一种喷墨打印装置 |
JP2019162801A (ja) | 2018-03-20 | 2019-09-26 | セイコーエプソン株式会社 | 液体噴射ヘッド及び液体噴射装置 |
JP2022154911A (ja) * | 2021-03-30 | 2022-10-13 | セイコーエプソン株式会社 | 圧電デバイス、液体噴射ヘッドおよび液体噴射装置 |
GB2606721A (en) * | 2021-05-17 | 2022-11-23 | Xaar Technology Ltd | Electrical component |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1086361A (ja) * | 1996-09-19 | 1998-04-07 | Seiko Epson Corp | インクジェットヘッド |
JPH10199861A (ja) * | 1997-01-14 | 1998-07-31 | Sony Corp | 配線形成方法 |
JP4453655B2 (ja) * | 2003-09-24 | 2010-04-21 | セイコーエプソン株式会社 | 液体噴射ヘッド及びその製造方法並びに液体噴射装置 |
JP2006231909A (ja) * | 2005-01-26 | 2006-09-07 | Seiko Epson Corp | 液体噴射ヘッド及び液体噴射装置 |
JP2006205427A (ja) * | 2005-01-26 | 2006-08-10 | Seiko Epson Corp | 液体噴射ヘッド及び液体噴射装置 |
JP2006255972A (ja) * | 2005-03-15 | 2006-09-28 | Seiko Epson Corp | 液体噴射ヘッド及び液体噴射装置 |
JP4873132B2 (ja) * | 2005-03-24 | 2012-02-08 | セイコーエプソン株式会社 | アクチュエータ装置の製造方法 |
JP4849240B2 (ja) | 2006-10-31 | 2012-01-11 | セイコーエプソン株式会社 | 液体噴射ヘッドの製造方法及び液体噴射ヘッド |
JP5278654B2 (ja) | 2008-01-24 | 2013-09-04 | セイコーエプソン株式会社 | 液体噴射ヘッド及び液体噴射装置 |
JP2009190247A (ja) * | 2008-02-14 | 2009-08-27 | Seiko Epson Corp | 液体噴射ヘッドおよび液体噴射装置 |
JP5007823B2 (ja) | 2008-02-25 | 2012-08-22 | セイコーエプソン株式会社 | 液体噴射ヘッドの製造方法 |
JP2011088311A (ja) * | 2009-10-21 | 2011-05-06 | Seiko Epson Corp | アクチュエーターの製造方法および液体噴射ヘッドの製造方法 |
JP5510205B2 (ja) * | 2010-09-03 | 2014-06-04 | セイコーエプソン株式会社 | 圧電素子、液体噴射ヘッド、液体噴射装置および圧電素子の製造方法 |
JP2012161958A (ja) * | 2011-02-04 | 2012-08-30 | Seiko Epson Corp | 液体噴射ヘッド及び液体噴射装置 |
JP5754178B2 (ja) * | 2011-03-07 | 2015-07-29 | 株式会社リコー | インクジェットヘッド及びインクジェット記録装置 |
JP5708098B2 (ja) * | 2011-03-18 | 2015-04-30 | 株式会社リコー | 液体吐出ヘッド、液体吐出装置および画像形成装置 |
-
2012
- 2012-12-20 JP JP2012277758A patent/JP6060672B2/ja active Active
-
2013
- 2013-12-10 US US14/101,706 patent/US9144970B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4324653A1 (en) * | 2022-08-19 | 2024-02-21 | Toshiba TEC Kabushiki Kaisha | Liquid ejecting head and liquid ejecting apparatus |
Also Published As
Publication number | Publication date |
---|---|
US20140176646A1 (en) | 2014-06-26 |
US9144970B2 (en) | 2015-09-29 |
JP2014121799A (ja) | 2014-07-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6060672B2 (ja) | 液体噴射ヘッド、液体噴射装置、圧電素子及びその製造方法 | |
JP6123992B2 (ja) | 液体噴射ヘッド、液体噴射装置、圧電素子及びその製造方法 | |
JP6168281B2 (ja) | 液体噴射ヘッド、液体噴射装置、液体噴射ヘッドの製造方法 | |
JP6593590B2 (ja) | 圧電素子、液体噴射ヘッド及び圧電デバイス | |
JP6226121B2 (ja) | 液体噴射ヘッド及び液体噴射装置並びにアクチュエーター装置 | |
JP6064677B2 (ja) | 圧電素子、液体噴射ヘッド、液体噴射装置及び超音波センサー | |
JP6115206B2 (ja) | 液体噴射ヘッド、液体噴射装置、圧電素子及びその製造方法 | |
JP6094143B2 (ja) | 液体噴射ヘッド、液体噴射装置及び圧電素子 | |
US11020973B2 (en) | Piezoelectric device, liquid ejecting head, liquid ejecting apparatus, and manufacturing method of piezoelectric device | |
US9522536B2 (en) | Piezoelectric device, liquid ejecting head, liquid ejecting apparatus and manufacturing method of piezoelectric device | |
JP2017050397A (ja) | 圧電素子、液体噴射ヘッド及び圧電デバイス | |
JP2014197576A (ja) | 液体噴射ヘッド、液体噴射装置、圧電素子、超音波トランスデューサー及び超音波デバイス | |
JP2010120270A (ja) | 液体噴射ヘッド、液体噴射装置、アクチュエータ装置及び液体噴射ヘッドの製造方法 | |
JP2014117925A (ja) | 液体噴射ヘッド、液体噴射装置、圧電素子及びその製造方法 | |
TWI597873B (zh) | 壓電元件之製造方法 | |
JP2016004932A (ja) | 圧電素子、液体噴射ヘッド、液体噴射装置及び圧電素子の製造方法 | |
JP2015166160A (ja) | 液体噴射ヘッド、液体噴射装置、液体噴射ヘッドの製造方法 | |
JP2016002728A (ja) | 液体噴射ヘッド及びその製造方法並びに液体噴射装置 | |
JP6206666B2 (ja) | 液体噴射ヘッド及び液体噴射装置 | |
JP2018130913A (ja) | 液体噴射ヘッド及び液体噴射装置 | |
JP2016036928A (ja) | 圧電デバイス、液体噴射ヘッド、液体噴射装置及び圧電デバイスの製造方法 | |
JP2015147331A (ja) | 液体噴射ヘッド及びその製造方法、液体噴射装置並びにアクチュエーター装置 | |
JP6183601B2 (ja) | 圧電素子、液体噴射ヘッド、液体噴射装置、超音波デバイス、フィルター及びセンサー並びに圧電素子の製造方法 | |
JP2017050422A (ja) | 圧電素子の製造方法 | |
JP2016060140A (ja) | 圧電デバイス、液体噴射ヘッド、液体噴射装置及び圧電デバイスの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20150109 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20151116 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20160610 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20160624 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160818 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160823 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161020 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20161115 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20161128 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6060672 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |