JP6050887B2 - トリミング可能な電流基準発生器を構成する方法 - Google Patents
トリミング可能な電流基準発生器を構成する方法 Download PDFInfo
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- JP6050887B2 JP6050887B2 JP2015503341A JP2015503341A JP6050887B2 JP 6050887 B2 JP6050887 B2 JP 6050887B2 JP 2015503341 A JP2015503341 A JP 2015503341A JP 2015503341 A JP2015503341 A JP 2015503341A JP 6050887 B2 JP6050887 B2 JP 6050887B2
- Authority
- JP
- Japan
- Prior art keywords
- current
- memory cell
- reference generator
- variable resistor
- current reference
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 title claims description 12
- 238000012360 testing method Methods 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 238000012544 monitoring process Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 7
- 238000013461 design Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000009966 trimming Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/021—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in voltage or current generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/026—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in sense amplifiers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/14—Dummy cell management; Sense reference voltage generators
Landscapes
- Read Only Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Semiconductor Memories (AREA)
- Amplifiers (AREA)
Description
Claims (4)
- トリミング可能な電流基準発生器を構成する方法であって、
トリミング可能な電流基準発生器を試験回路に結合することと、
前記電流基準発生器を第1のレベルに設定することと、
前記試験回路の出力を監視することと、
前記電流基準発生器における前記電流を、前記出力が変化するまで、前記第1のレベルを超えるレベルに増加させることと、を含む、方法。 - 前記試験回路がメモリセルを備える、請求項1に記載の方法。
- 前記電流基準発生器によって発生させられた電流を前記メモリセルによって引き込まれた電流と比較して、前記出力を発生させるステップを更に含む、請求項2に記載の方法。
- 前記出力が変化した後に抵抗の値を格納するステップを更に含む、請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2012100898472A CN103366790A (zh) | 2012-03-30 | 2012-03-30 | 用于读出放大器的可调整参考发生器 |
CN201210089847.2 | 2012-03-30 | ||
PCT/US2013/032489 WO2013148357A1 (en) | 2012-03-30 | 2013-03-15 | Trimmable reference generator for sense amplifier |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016194604A Division JP6336541B2 (ja) | 2012-03-30 | 2016-09-30 | センス増幅器のためのトリミング可能な基準発生器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015515710A JP2015515710A (ja) | 2015-05-28 |
JP6050887B2 true JP6050887B2 (ja) | 2016-12-21 |
Family
ID=49261094
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015503341A Active JP6050887B2 (ja) | 2012-03-30 | 2013-03-15 | トリミング可能な電流基準発生器を構成する方法 |
JP2016194604A Active JP6336541B2 (ja) | 2012-03-30 | 2016-09-30 | センス増幅器のためのトリミング可能な基準発生器 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016194604A Active JP6336541B2 (ja) | 2012-03-30 | 2016-09-30 | センス増幅器のためのトリミング可能な基準発生器 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9564235B2 (ja) |
EP (1) | EP2831887A4 (ja) |
JP (2) | JP6050887B2 (ja) |
KR (1) | KR101732238B1 (ja) |
CN (1) | CN103366790A (ja) |
WO (1) | WO2013148357A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103366791B (zh) * | 2012-03-30 | 2017-04-12 | 硅存储技术公司 | 即时可调整读出放大器 |
US9361992B1 (en) * | 2014-12-30 | 2016-06-07 | Globalfoundries Singapore Pte. Ltd. | Low voltage semiconductor memory device and method of operation |
US9748943B2 (en) | 2015-08-13 | 2017-08-29 | Arm Ltd. | Programmable current for correlated electron switch |
US9851738B2 (en) | 2015-08-13 | 2017-12-26 | Arm Ltd. | Programmable voltage reference |
US9979385B2 (en) * | 2015-10-05 | 2018-05-22 | Arm Ltd. | Circuit and method for monitoring correlated electron switches |
CN106935267B (zh) * | 2015-12-31 | 2020-11-10 | 硅存储技术公司 | 用于闪速存储器系统的低功率感测放大器 |
CN107369471B (zh) * | 2016-05-12 | 2020-09-08 | 中芯国际集成电路制造(上海)有限公司 | 存储器及其参考电路的校准方法 |
US10360962B1 (en) | 2017-12-28 | 2019-07-23 | Spin Memory, Inc. | Memory array with individually trimmable sense amplifiers |
US11817163B2 (en) | 2020-07-16 | 2023-11-14 | Changxin Memory Technologies, Inc. | Circuit for detecting state of anti-fuse storage unit and memory device thereof |
US11817159B2 (en) | 2020-07-16 | 2023-11-14 | Changxin Memory Technologies, Inc. | Circuit for detecting anti-fuse memory cell state and memory |
US11854633B2 (en) | 2020-07-16 | 2023-12-26 | Changxin Memory Technologies, Inc. | Anti-fuse memory cell state detection circuit and memory |
CN113948143A (zh) * | 2020-07-16 | 2022-01-18 | 长鑫存储技术有限公司 | 反熔丝存储单元状态检测电路及存储器 |
CN113948142B (zh) | 2020-07-16 | 2023-09-12 | 长鑫存储技术有限公司 | 反熔丝存储单元状态检测电路及存储器 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
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IT1303201B1 (it) * | 1998-11-24 | 2000-10-30 | St Microelectronics Srl | Circuito per la programmazione parallela di celle di memoria nonvolatile, con velocita' di programmazione regolabile. |
US6407946B2 (en) * | 1999-12-08 | 2002-06-18 | Matsushita Electric Industrial Co., Ltd. | Nonvolatile semiconductor memory device |
JP2001229686A (ja) * | 1999-12-08 | 2001-08-24 | Matsushita Electric Ind Co Ltd | 不揮発性半導体記憶装置 |
JP4467815B2 (ja) * | 2001-02-26 | 2010-05-26 | 富士通マイクロエレクトロニクス株式会社 | 不揮発性半導体メモリの読み出し動作方法および不揮発性半導体メモリ |
JP2003016791A (ja) * | 2001-06-28 | 2003-01-17 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
US6754103B2 (en) * | 2002-11-04 | 2004-06-22 | Silicon Storage Technology, Inc. | Method and apparatus for programming and testing a non-volatile memory cell for storing multibit states |
US6912150B2 (en) * | 2003-05-13 | 2005-06-28 | Lionel Portman | Reference current generator, and method of programming, adjusting and/or operating same |
DE10327284B4 (de) * | 2003-06-17 | 2005-11-03 | Infineon Technologies Ag | Prüflesevorrichtung für Speicher |
US7057958B2 (en) * | 2003-09-30 | 2006-06-06 | Sandisk Corporation | Method and system for temperature compensation for memory cells with temperature-dependent behavior |
JP2005251315A (ja) * | 2004-03-05 | 2005-09-15 | Citizen Watch Co Ltd | メモリ装置 |
JP4685484B2 (ja) * | 2005-03-24 | 2011-05-18 | シチズンホールディングス株式会社 | 不揮発性半導体記憶装置 |
JP5116987B2 (ja) * | 2005-05-23 | 2013-01-09 | ルネサスエレクトロニクス株式会社 | 集積半導体不揮発性記憶装置 |
US7495971B2 (en) * | 2006-04-19 | 2009-02-24 | Infineon Technologies Ag | Circuit and a method of determining the resistive state of a resistive memory cell |
US7649781B2 (en) * | 2006-05-17 | 2010-01-19 | Freescale Semiconductor, Inc. | Bit cell reference device and methods thereof |
WO2008024688A2 (en) * | 2006-08-25 | 2008-02-28 | Micron Technology, Inc. | Method, apparatus and system relating to automatic cell threshold voltage measurement |
JP2008052841A (ja) * | 2006-08-25 | 2008-03-06 | Micron Technology Inc | 自動セル閾値電圧測定に関する方法、装置及びシステム |
ITTO20070109A1 (it) * | 2007-02-14 | 2008-08-15 | St Microelectronics Srl | Circuito e metodo di lettura per un dispositivo di memoria non volatile basati sulla generazione adattativa di una grandezza elettrica di riferimento |
JP5165980B2 (ja) * | 2007-09-25 | 2013-03-21 | シチズン時計株式会社 | 読み出し電圧発生装置 |
US7675792B2 (en) | 2007-09-26 | 2010-03-09 | Intel Corporation | Generating reference currents compensated for process variation in non-volatile memories |
JPWO2010082243A1 (ja) * | 2009-01-13 | 2012-06-28 | パナソニック株式会社 | 不揮発性半導体メモリ及びメモリシステム |
JP2010282987A (ja) * | 2009-06-02 | 2010-12-16 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP5319423B2 (ja) * | 2009-06-30 | 2013-10-16 | ラピスセミコンダクタ株式会社 | 不揮発性半導体記憶装置 |
-
2012
- 2012-03-30 CN CN2012100898472A patent/CN103366790A/zh active Pending
-
2013
- 2013-03-15 EP EP13770234.6A patent/EP2831887A4/en not_active Ceased
- 2013-03-15 JP JP2015503341A patent/JP6050887B2/ja active Active
- 2013-03-15 US US14/386,814 patent/US9564235B2/en active Active
- 2013-03-15 KR KR1020147030479A patent/KR101732238B1/ko active IP Right Grant
- 2013-03-15 WO PCT/US2013/032489 patent/WO2013148357A1/en active Application Filing
-
2016
- 2016-09-30 JP JP2016194604A patent/JP6336541B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
US9564235B2 (en) | 2017-02-07 |
KR101732238B1 (ko) | 2017-05-24 |
CN103366790A (zh) | 2013-10-23 |
JP2015515710A (ja) | 2015-05-28 |
KR20140140630A (ko) | 2014-12-09 |
EP2831887A4 (en) | 2015-12-23 |
EP2831887A1 (en) | 2015-02-04 |
JP6336541B2 (ja) | 2018-06-06 |
WO2013148357A1 (en) | 2013-10-03 |
JP2017027650A (ja) | 2017-02-02 |
US20150078081A1 (en) | 2015-03-19 |
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