IT1303201B1 - Circuito per la programmazione parallela di celle di memoria nonvolatile, con velocita' di programmazione regolabile. - Google Patents

Circuito per la programmazione parallela di celle di memoria nonvolatile, con velocita' di programmazione regolabile.

Info

Publication number
IT1303201B1
IT1303201B1 IT1998TO000990A ITTO980990A IT1303201B1 IT 1303201 B1 IT1303201 B1 IT 1303201B1 IT 1998TO000990 A IT1998TO000990 A IT 1998TO000990A IT TO980990 A ITTO980990 A IT TO980990A IT 1303201 B1 IT1303201 B1 IT 1303201B1
Authority
IT
Italy
Prior art keywords
programming
circuit
memory cells
nonvolatile memory
adjustable
Prior art date
Application number
IT1998TO000990A
Other languages
English (en)
Inventor
Roberto Canegallo
Marco Pasotti
Pier Luigi Rolandi
Giovanni Guaitini
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT1998TO000990A priority Critical patent/IT1303201B1/it
Priority to US09/447,531 priority patent/US6163483A/en
Publication of ITTO980990A1 publication Critical patent/ITTO980990A1/it
Application granted granted Critical
Publication of IT1303201B1 publication Critical patent/IT1303201B1/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
IT1998TO000990A 1998-11-24 1998-11-24 Circuito per la programmazione parallela di celle di memoria nonvolatile, con velocita' di programmazione regolabile. IT1303201B1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT1998TO000990A IT1303201B1 (it) 1998-11-24 1998-11-24 Circuito per la programmazione parallela di celle di memoria nonvolatile, con velocita' di programmazione regolabile.
US09/447,531 US6163483A (en) 1998-11-24 1999-11-23 Circuit for parallel programming nonvolatile memory cells, with adjustable programming speed

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT1998TO000990A IT1303201B1 (it) 1998-11-24 1998-11-24 Circuito per la programmazione parallela di celle di memoria nonvolatile, con velocita' di programmazione regolabile.

Publications (2)

Publication Number Publication Date
ITTO980990A1 ITTO980990A1 (it) 2000-05-24
IT1303201B1 true IT1303201B1 (it) 2000-10-30

Family

ID=11417206

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1998TO000990A IT1303201B1 (it) 1998-11-24 1998-11-24 Circuito per la programmazione parallela di celle di memoria nonvolatile, con velocita' di programmazione regolabile.

Country Status (2)

Country Link
US (1) US6163483A (it)
IT (1) IT1303201B1 (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6853584B2 (en) * 2003-05-02 2005-02-08 Silicon Storage Technology, Inc. Circuit for compensating programming current required, depending upon programming state
US7352626B1 (en) * 2005-08-29 2008-04-01 Spansion Llc Voltage regulator with less overshoot and faster settling time
US8358543B1 (en) 2005-09-20 2013-01-22 Spansion Llc Flash memory programming with data dependent control of source lines
CN103366790A (zh) * 2012-03-30 2013-10-23 硅存储技术公司 用于读出放大器的可调整参考发生器
US11069411B2 (en) 2013-03-14 2021-07-20 Silicon Storage Technology, Inc. Programming circuit and method for flash memory array
US9093161B2 (en) 2013-03-14 2015-07-28 Sillicon Storage Technology, Inc. Dynamic programming of advanced nanometer flash memory
US20140282092A1 (en) * 2013-03-14 2014-09-18 Daniel E. Riddell Contextual information interface associated with media content
JP2014187838A (ja) * 2013-03-25 2014-10-02 Toshiba Corp 半導体集積回路

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5790459A (en) * 1995-08-04 1998-08-04 Micron Quantum Devices, Inc. Memory circuit for performing threshold voltage tests on cells of a memory array
US5914896A (en) * 1996-08-01 1999-06-22 Aplus Flash Technology, Inc. Flash memory with high speed erasing structure using thin oxide and thick oxide semiconductor devices

Also Published As

Publication number Publication date
ITTO980990A1 (it) 2000-05-24
US6163483A (en) 2000-12-19

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