DE69314964T2 - Nichtflüchtige Speicherzelle mit zwei Polysiliziumebenen - Google Patents

Nichtflüchtige Speicherzelle mit zwei Polysiliziumebenen

Info

Publication number
DE69314964T2
DE69314964T2 DE69314964T DE69314964T DE69314964T2 DE 69314964 T2 DE69314964 T2 DE 69314964T2 DE 69314964 T DE69314964 T DE 69314964T DE 69314964 T DE69314964 T DE 69314964T DE 69314964 T2 DE69314964 T2 DE 69314964T2
Authority
DE
Germany
Prior art keywords
memory cell
volatile memory
polysilicon levels
polysilicon
levels
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69314964T
Other languages
English (en)
Other versions
DE69314964D1 (de
Inventor
Alan Kramer
Marco Sabatini
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL, SGS Thomson Microelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69314964D1 publication Critical patent/DE69314964D1/de
Publication of DE69314964T2 publication Critical patent/DE69314964T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE69314964T 1993-12-31 1993-12-31 Nichtflüchtige Speicherzelle mit zwei Polysiliziumebenen Expired - Fee Related DE69314964T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP93830538A EP0661756B1 (de) 1993-12-31 1993-12-31 Nichtflüchtige Speicherzelle mit zwei Polysiliziumebenen

Publications (2)

Publication Number Publication Date
DE69314964D1 DE69314964D1 (de) 1997-12-04
DE69314964T2 true DE69314964T2 (de) 1998-06-04

Family

ID=8215296

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69314964T Expired - Fee Related DE69314964T2 (de) 1993-12-31 1993-12-31 Nichtflüchtige Speicherzelle mit zwei Polysiliziumebenen

Country Status (4)

Country Link
US (1) US5592418A (de)
EP (1) EP0661756B1 (de)
JP (1) JP2796257B2 (de)
DE (1) DE69314964T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0833267B1 (de) 1996-09-30 2004-02-25 STMicroelectronics S.r.l. Ladungsinjektionsschaltung für einen MOS-Transistor mit isolierter Steuerelektrode und Berechnungsgeräte, die diese Schaltung verwenden
DE69627654D1 (de) 1996-09-30 2003-05-28 St Microelectronics Srl Digital-Analog-Wandler des Ladungstyps mit IG-MOS-Transistoren
US6182239B1 (en) 1998-02-06 2001-01-30 Stmicroelectronics, Inc. Fault-tolerant codes for multi-level memories
US6044004A (en) * 1998-12-22 2000-03-28 Stmicroelectronics, Inc. Memory integrated circuit for storing digital and analog data and method
US6618290B1 (en) * 2000-06-23 2003-09-09 Advanced Micro Devices, Inc. Method of programming a non-volatile memory cell using a baking process
US6884638B1 (en) * 2002-08-20 2005-04-26 Advanced Micro Devices, Inc. Method of fabricating a flash memory semiconductor device by determining the active region width between shallow trench isolation structures using an overdrive current measurement technique and a device thereby fabricated
KR100881201B1 (ko) * 2003-01-09 2009-02-05 삼성전자주식회사 사이드 게이트를 구비하는 소노스 메모리 소자 및 그제조방법
US10474948B2 (en) 2015-03-27 2019-11-12 University Of Dayton Analog neuromorphic circuit implemented using resistive memories
US10176425B2 (en) 2016-07-14 2019-01-08 University Of Dayton Analog neuromorphic circuits for dot-product operation implementing resistive memories
US9966137B2 (en) 2016-08-17 2018-05-08 Samsung Electronics Co., Ltd. Low power analog or multi-level memory for neuromorphic computing
CN112687306B (zh) * 2020-12-31 2023-10-20 中国科学技术大学 基于NOR Flash的距离计算装置及方法
US11735281B2 (en) * 2021-04-30 2023-08-22 Hewlett Packard Enterprise Development Lp Analog content addressable memory with analog input and analog output

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE666834A (de) * 1964-07-13
JPS5974679A (ja) * 1982-10-20 1984-04-27 Mitsubishi Electric Corp 半導体記憶装置
US4727515A (en) * 1983-12-14 1988-02-23 General Electric Co. High density programmable memory array
US4717943A (en) * 1984-06-25 1988-01-05 International Business Machines Charge storage structure for nonvolatile memories
US4852062A (en) * 1987-09-28 1989-07-25 Motorola, Inc. EPROM device using asymmetrical transistor characteristics
US5245569A (en) * 1992-02-27 1993-09-14 Micron Technology, Inc. Semiconductor memory device with circuit for isolating arrayed memory cells, and method for isolating
US5264734A (en) * 1992-05-19 1993-11-23 Intel Corporation Difference calculating neural network utilizing switched capacitors

Also Published As

Publication number Publication date
JP2796257B2 (ja) 1998-09-10
EP0661756A1 (de) 1995-07-05
US5592418A (en) 1997-01-07
EP0661756B1 (de) 1997-10-29
JPH07326680A (ja) 1995-12-12
DE69314964D1 (de) 1997-12-04

Similar Documents

Publication Publication Date Title
DE69316628D1 (de) Flüchtige Speicherzelle
DE69428652D1 (de) Halbleiterspeicher mit mehreren Banken
DE69420591D1 (de) Nichtflüchtige Halbleiterspeicher
DE69418522T2 (de) Nichtflüchtige Halbleiterspeicheranordnung mit Nachprüfungsfunktion
DE69328639T2 (de) Halbleiterspeicheranordnung mit Ersatzspeicherzellen
DE69109495D1 (de) Einzeltransistor-eeprom-speicherzelle.
DE69614787T2 (de) Speichermatrix mit mehrzustandsspeicherzellen
DE69528329D1 (de) EEPROM-Speicherzelle
DE69614299D1 (de) Nichtflüchtige Halbleiterspeicheranordnung mit Block-Löschfunktion
DE69431735D1 (de) Nichtflüchtiger Speicher
DE69331519D1 (de) Nichtfluechtige halbleiterspeicheranordnung mit isolierter gate-elektrode
DE69417712D1 (de) Nichtflüchtige Halbleiter-Speichereinrichtung
DE69625755T2 (de) Nichtflüchtige zwei-Transistor Speicherzelle mit einem einzigen Polysiliziumgate
DE69432245D1 (de) Mikrorechner mit Speicherleseschutz
DE69321700D1 (de) Nicht-flüchtige Halbleiterspeicher
DE69314964D1 (de) Nichtflüchtige Speicherzelle mit zwei Polysiliziumebenen
DE69414459T2 (de) Dynamischer Speicher mit Referenzzellen
DE69929409D1 (de) Speicherzelle mit kapazitiver Ladung
DE69418521T2 (de) Nichtflüchtige Speicheranordnung
DE69220465D1 (de) Halbleiteranordnung mit Speicherzelle
DE69406037T2 (de) Nicht-flüchtige Halbleiterspeicheranordnung
DE69626472T2 (de) Halbleiterspeicher mit redundanten Speicherzellen
DE69419339T2 (de) Nichtflüchtige Speicheranordnung
DE69429794D1 (de) Nichtflüchtige Halbleiterspeicher
NL192066B (nl) Niet-vluchtige halfgeleidergeheugencel.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee