JP6039165B2 - 撮像素子及び撮像装置 - Google Patents

撮像素子及び撮像装置 Download PDF

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Publication number
JP6039165B2
JP6039165B2 JP2011176333A JP2011176333A JP6039165B2 JP 6039165 B2 JP6039165 B2 JP 6039165B2 JP 2011176333 A JP2011176333 A JP 2011176333A JP 2011176333 A JP2011176333 A JP 2011176333A JP 6039165 B2 JP6039165 B2 JP 6039165B2
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JP
Japan
Prior art keywords
potential
pixel
photoelectric conversion
conversion units
signal
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Expired - Fee Related
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JP2011176333A
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English (en)
Japanese (ja)
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JP2013041890A5 (enExample
JP2013041890A (ja
Inventor
顯 佐々木
顯 佐々木
伸弘 竹田
伸弘 竹田
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2011176333A priority Critical patent/JP6039165B2/ja
Priority to PCT/JP2012/070584 priority patent/WO2013022111A1/en
Priority to US14/127,818 priority patent/US9030589B2/en
Publication of JP2013041890A publication Critical patent/JP2013041890A/ja
Publication of JP2013041890A5 publication Critical patent/JP2013041890A5/ja
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/583—Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2011176333A 2011-08-11 2011-08-11 撮像素子及び撮像装置 Expired - Fee Related JP6039165B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011176333A JP6039165B2 (ja) 2011-08-11 2011-08-11 撮像素子及び撮像装置
PCT/JP2012/070584 WO2013022111A1 (en) 2011-08-11 2012-08-07 Image sensor and image sensing apparatus
US14/127,818 US9030589B2 (en) 2011-08-11 2012-08-07 Image sensor and image sensing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011176333A JP6039165B2 (ja) 2011-08-11 2011-08-11 撮像素子及び撮像装置

Publications (3)

Publication Number Publication Date
JP2013041890A JP2013041890A (ja) 2013-02-28
JP2013041890A5 JP2013041890A5 (enExample) 2014-09-18
JP6039165B2 true JP6039165B2 (ja) 2016-12-07

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US (1) US9030589B2 (enExample)
JP (1) JP6039165B2 (enExample)
WO (1) WO2013022111A1 (enExample)

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JP5743837B2 (ja) * 2011-10-07 2015-07-01 キヤノン株式会社 光電変換装置、撮像装置および撮像システム
JP6172888B2 (ja) * 2012-01-18 2017-08-02 キヤノン株式会社 撮像装置および撮像システム
JP2014106476A (ja) 2012-11-29 2014-06-09 Canon Inc 焦点検出装置、撮像装置、撮像システム、焦点検出方法、プログラム、および、記憶媒体
JP6238546B2 (ja) * 2013-04-08 2017-11-29 キヤノン株式会社 光電変換装置および撮像システム
JP5813047B2 (ja) * 2013-04-26 2015-11-17 キヤノン株式会社 撮像装置、および、撮像システム。
JP2015012127A (ja) * 2013-06-28 2015-01-19 ソニー株式会社 固体撮像素子および電子機器
JP6338442B2 (ja) * 2013-07-11 2018-06-06 キヤノン株式会社 固体撮像素子、測距装置、および撮像装置
JP6355362B2 (ja) * 2014-02-28 2018-07-11 キヤノン株式会社 光電変換装置および撮像システム
JP6308864B2 (ja) * 2014-05-15 2018-04-11 キヤノン株式会社 撮像装置
JP6254048B2 (ja) * 2014-06-05 2017-12-27 ルネサスエレクトロニクス株式会社 半導体装置
JP2016015430A (ja) 2014-07-03 2016-01-28 ソニー株式会社 固体撮像素子および電子機器
JP6600170B2 (ja) * 2014-07-07 2019-10-30 キヤノン株式会社 撮像素子及びその制御方法並びに撮像装置
JP6389685B2 (ja) * 2014-07-30 2018-09-12 キヤノン株式会社 撮像装置、および、撮像システム
KR102286109B1 (ko) 2014-08-05 2021-08-04 삼성전자주식회사 이미지 픽셀, 이를 포함하는 이미지 센서, 및 이를 포함하는 이미지 처리 시스템
JP2016046420A (ja) * 2014-08-25 2016-04-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6362478B2 (ja) * 2014-08-27 2018-07-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
KR102306670B1 (ko) 2014-08-29 2021-09-29 삼성전자주식회사 이미지 센서 및 그 제조 방법
KR102219941B1 (ko) 2015-03-10 2021-02-25 삼성전자주식회사 이미지 센서, 이를 포함하는 데이터 처리 시스템, 및 모바일 컴퓨팅 장치
JP6532265B2 (ja) * 2015-04-02 2019-06-19 キヤノン株式会社 撮像装置
KR102348760B1 (ko) 2015-07-24 2022-01-07 삼성전자주식회사 이미지 센서 및 그에 따른 신호 처리 방법
JP2017037907A (ja) * 2015-08-07 2017-02-16 ルネサスエレクトロニクス株式会社 撮像装置およびその製造方法
JP6700687B2 (ja) * 2015-08-07 2020-05-27 キヤノン株式会社 光電変換デバイス、測距装置および情報処理システム
KR102437162B1 (ko) * 2015-10-12 2022-08-29 삼성전자주식회사 이미지 센서
JP6660141B2 (ja) 2015-10-14 2020-03-04 キヤノン株式会社 撮像素子およびそれを用いる撮像装置
JP6727830B2 (ja) * 2016-02-09 2020-07-22 キヤノン株式会社 撮像装置
JP6779038B2 (ja) 2016-06-01 2020-11-04 キヤノン株式会社 撮像素子及びその制御方法、撮像装置及びその制御方法
JP6758925B2 (ja) 2016-06-01 2020-09-23 キヤノン株式会社 撮像装置及びその制御方法
JP6701001B2 (ja) 2016-06-22 2020-05-27 キヤノン株式会社 撮像装置及びその制御方法、プログラム、記憶媒体
JP2018007035A (ja) * 2016-07-01 2018-01-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法
JP6420450B2 (ja) * 2017-11-29 2018-11-07 ルネサスエレクトロニクス株式会社 半導体装置
TWI833775B (zh) 2018-07-10 2024-03-01 日商索尼半導體解決方案公司 固態攝像裝置及電子裝置
JP2020017552A (ja) 2018-07-23 2020-01-30 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法
KR102614851B1 (ko) * 2018-07-23 2023-12-19 삼성전자주식회사 이미지 센서
CN116783709A (zh) * 2020-11-20 2023-09-19 索尼半导体解决方案公司 成像装置
WO2022201835A1 (ja) * 2021-03-24 2022-09-29 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び撮像装置
WO2022201839A1 (ja) * 2021-03-24 2022-09-29 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び撮像装置
JP2023166867A (ja) * 2022-05-10 2023-11-22 キヤノン株式会社 撮像素子及び撮像装置
TW202512482A (zh) * 2023-09-07 2025-03-16 日商索尼半導體解決方案公司 攝像元件、及攝像裝置及電子機器

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JP2001250931A (ja) * 2000-03-07 2001-09-14 Canon Inc 固体撮像装置およびこれを用いた撮像システム
JP4130307B2 (ja) * 2001-01-15 2008-08-06 Ｎｅｃエレクトロニクス株式会社 固体撮像装置
JP2006278620A (ja) * 2005-03-29 2006-10-12 Texas Instr Japan Ltd 半導体装置およびその製造方法
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JP5076528B2 (ja) * 2007-02-06 2012-11-21 株式会社ニコン 光電変換部の連結／分離構造、固体撮像素子及び撮像装置
JP5253028B2 (ja) 2008-07-23 2013-07-31 キヤノン株式会社 撮像システムおよびその制御方法
JP5374110B2 (ja) 2008-10-22 2013-12-25 キヤノン株式会社 撮像センサ及び撮像装置
JP4881987B2 (ja) 2009-10-06 2012-02-22 キヤノン株式会社 固体撮像装置および撮像装置
JP5407798B2 (ja) * 2009-11-20 2014-02-05 リコーイメージング株式会社 焦点検出装置および画像信号処理装置
JP5486284B2 (ja) * 2009-12-08 2014-05-07 キヤノン株式会社 撮像装置

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US20140139716A1 (en) 2014-05-22
WO2013022111A1 (en) 2013-02-14
US9030589B2 (en) 2015-05-12
JP2013041890A (ja) 2013-02-28

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