JP6029266B2 - 撮像装置、撮像システムおよび撮像装置の製造方法 - Google Patents

撮像装置、撮像システムおよび撮像装置の製造方法 Download PDF

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JP6029266B2
JP6029266B2 JP2011173963A JP2011173963A JP6029266B2 JP 6029266 B2 JP6029266 B2 JP 6029266B2 JP 2011173963 A JP2011173963 A JP 2011173963A JP 2011173963 A JP2011173963 A JP 2011173963A JP 6029266 B2 JP6029266 B2 JP 6029266B2
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film
light
layer
refractive index
shielding film
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Japanese (ja)
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JP2013038266A (ja
JP2013038266A5 (enExample
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亨 中澤
亨 中澤
小林　広明
広明 小林
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Canon Inc
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Canon Inc
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Priority to JP2011173963A priority Critical patent/JP6029266B2/ja
Priority to US13/566,781 priority patent/US8692345B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Solid State Image Pick-Up Elements (AREA)
JP2011173963A 2011-08-09 2011-08-09 撮像装置、撮像システムおよび撮像装置の製造方法 Active JP6029266B2 (ja)

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Application Number Priority Date Filing Date Title
JP2011173963A JP6029266B2 (ja) 2011-08-09 2011-08-09 撮像装置、撮像システムおよび撮像装置の製造方法
US13/566,781 US8692345B2 (en) 2011-08-09 2012-08-03 Image sensing device, image sensing system, and method for manufacturing image sensing device

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JP2011173963A JP6029266B2 (ja) 2011-08-09 2011-08-09 撮像装置、撮像システムおよび撮像装置の製造方法

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JP2013038266A JP2013038266A (ja) 2013-02-21
JP2013038266A5 JP2013038266A5 (enExample) 2014-09-25
JP6029266B2 true JP6029266B2 (ja) 2016-11-24

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KR102651181B1 (ko) * 2017-12-26 2024-03-26 소니 세미컨덕터 솔루션즈 가부시키가이샤 촬상 소자 및 촬상 장치
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KR102721025B1 (ko) * 2019-01-03 2024-10-24 삼성전자주식회사 이미지 센서 및 이의 제조 방법
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JP2013038266A (ja) 2013-02-21
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