JP2013038266A5 - - Google Patents
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- Publication number
- JP2013038266A5 JP2013038266A5 JP2011173963A JP2011173963A JP2013038266A5 JP 2013038266 A5 JP2013038266 A5 JP 2013038266A5 JP 2011173963 A JP2011173963 A JP 2011173963A JP 2011173963 A JP2011173963 A JP 2011173963A JP 2013038266 A5 JP2013038266 A5 JP 2013038266A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- refractive index
- layer
- photoelectric conversion
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000006243 chemical reaction Methods 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 22
- 238000003384 imaging method Methods 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 claims description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 150000002736 metal compounds Chemical class 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910021334 nickel silicide Inorganic materials 0.000 claims description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910021339 platinum silicide Inorganic materials 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 239000010948 rhodium Substances 0.000 claims description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 229910021332 silicide Inorganic materials 0.000 claims description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 230000003595 spectral effect Effects 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 1
- 230000009977 dual effect Effects 0.000 claims 1
- 229910010272 inorganic material Inorganic materials 0.000 claims 1
- 239000011147 inorganic material Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 239000011368 organic material Substances 0.000 claims 1
- 238000005498 polishing Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011173963A JP6029266B2 (ja) | 2011-08-09 | 2011-08-09 | 撮像装置、撮像システムおよび撮像装置の製造方法 |
| US13/566,781 US8692345B2 (en) | 2011-08-09 | 2012-08-03 | Image sensing device, image sensing system, and method for manufacturing image sensing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011173963A JP6029266B2 (ja) | 2011-08-09 | 2011-08-09 | 撮像装置、撮像システムおよび撮像装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013038266A JP2013038266A (ja) | 2013-02-21 |
| JP2013038266A5 true JP2013038266A5 (enExample) | 2014-09-25 |
| JP6029266B2 JP6029266B2 (ja) | 2016-11-24 |
Family
ID=47677004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011173963A Active JP6029266B2 (ja) | 2011-08-09 | 2011-08-09 | 撮像装置、撮像システムおよび撮像装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8692345B2 (enExample) |
| JP (1) | JP6029266B2 (enExample) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101774491B1 (ko) | 2011-10-14 | 2017-09-13 | 삼성전자주식회사 | 유기 포토다이오드를 포함하는 유기 픽셀, 이의 제조 방법, 및 상기 유기 픽셀을 포함하는 장치들 |
| JP5907011B2 (ja) * | 2012-09-07 | 2016-04-20 | 株式会社デンソー | 光センサ |
| JP6055270B2 (ja) * | 2012-10-26 | 2016-12-27 | キヤノン株式会社 | 固体撮像装置、その製造方法、およびカメラ |
| US10203411B2 (en) * | 2012-11-02 | 2019-02-12 | Maxim Integrated Products, Inc. | System and method for reducing ambient light sensitivity of infrared (IR) detectors |
| JP6116878B2 (ja) * | 2012-12-03 | 2017-04-19 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP5987108B2 (ja) * | 2013-04-23 | 2016-09-07 | シャープ株式会社 | 回路内蔵光電変換装置およびその製造方法 |
| JP5956968B2 (ja) * | 2013-09-13 | 2016-07-27 | 株式会社東芝 | 受光素子および光結合型信号絶縁装置 |
| US9337225B2 (en) * | 2013-09-13 | 2016-05-10 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device and manufacturing method thereof |
| US10032817B2 (en) | 2013-10-03 | 2018-07-24 | Sharp Kabushiki Kaisha | Photoelectric conversion device |
| JP6195369B2 (ja) * | 2013-11-13 | 2017-09-13 | キヤノン株式会社 | 固体撮像装置、カメラ、および、固体撮像装置の製造方法 |
| KR20150089650A (ko) * | 2014-01-28 | 2015-08-05 | 에스케이하이닉스 주식회사 | 이미지 센서 및 그 제조 방법 |
| US9324755B2 (en) * | 2014-05-05 | 2016-04-26 | Semiconductor Components Industries, Llc | Image sensors with reduced stack height |
| JP6482790B2 (ja) * | 2014-08-21 | 2019-03-13 | ルネサスエレクトロニクス株式会社 | 光半導体装置 |
| WO2016103430A1 (ja) * | 2014-12-25 | 2016-06-30 | キヤノン株式会社 | ラインセンサ、画像読取装置、画像形成装置 |
| US9704901B2 (en) * | 2015-01-16 | 2017-07-11 | Visera Technologies Company Limited | Solid-state imaging devices |
| US10263025B2 (en) * | 2015-06-05 | 2019-04-16 | Sony Corporation | Solid-state imaging sensor |
| JP6556511B2 (ja) | 2015-06-17 | 2019-08-07 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US9589969B1 (en) * | 2016-01-15 | 2017-03-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method of the same |
| JP2017168531A (ja) * | 2016-03-14 | 2017-09-21 | 株式会社リコー | 固体撮像装置及び固体撮像装置の製造方法 |
| JP6744748B2 (ja) * | 2016-04-06 | 2020-08-19 | キヤノン株式会社 | 固体撮像装置及びその製造方法 |
| JP2018042141A (ja) * | 2016-09-08 | 2018-03-15 | 株式会社デンソー | 撮像装置 |
| KR102490821B1 (ko) * | 2018-01-23 | 2023-01-19 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
| KR102398784B1 (ko) * | 2017-08-14 | 2022-05-16 | 주식회사 디비하이텍 | 후면조사형 씨모스 이미지 센서 및 형성 방법 |
| JP2019075441A (ja) * | 2017-10-13 | 2019-05-16 | キヤノン株式会社 | 光電変換装置および機器 |
| KR102651181B1 (ko) * | 2017-12-26 | 2024-03-26 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 촬상 소자 및 촬상 장치 |
| KR102593949B1 (ko) * | 2018-07-25 | 2023-10-27 | 삼성전자주식회사 | 이미지 센서 |
| US11244978B2 (en) * | 2018-10-17 | 2022-02-08 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus and equipment including the same |
| KR102639539B1 (ko) * | 2018-11-05 | 2024-02-26 | 삼성전자주식회사 | 이미지 센서 및 이의 형성 방법 |
| KR102721025B1 (ko) * | 2019-01-03 | 2024-10-24 | 삼성전자주식회사 | 이미지 센서 및 이의 제조 방법 |
| US11398512B2 (en) * | 2019-12-19 | 2022-07-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photo-sensing device and manufacturing method thereof |
| JP7520558B2 (ja) * | 2020-04-07 | 2024-07-23 | キヤノン株式会社 | 光電変換装置および機器 |
| JP7328176B2 (ja) * | 2020-04-15 | 2023-08-16 | キヤノン株式会社 | 光電変換装置および機器 |
| JP7633006B2 (ja) * | 2020-07-27 | 2025-02-19 | 株式会社ジャパンディスプレイ | 検出装置 |
| CN115881738A (zh) * | 2021-09-26 | 2023-03-31 | 群创光电股份有限公司 | 光学感测装置 |
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| JPH1168074A (ja) * | 1997-08-13 | 1999-03-09 | Sony Corp | 固体撮像素子 |
| JP3702611B2 (ja) * | 1997-10-06 | 2005-10-05 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
| JP3324581B2 (ja) * | 1999-09-21 | 2002-09-17 | 日本電気株式会社 | 固体撮像装置及びその製造方法 |
| JP3824469B2 (ja) | 2000-04-03 | 2006-09-20 | シャープ株式会社 | 固体撮像装置、及びその製造方法 |
| JP4686201B2 (ja) | 2005-01-27 | 2011-05-25 | パナソニック株式会社 | 固体撮像装置及びその製造方法 |
| JP2007184311A (ja) | 2005-12-29 | 2007-07-19 | Sony Corp | 固体撮像装置およびその製造方法 |
| JP2007311391A (ja) * | 2006-05-16 | 2007-11-29 | Matsushita Electric Ind Co Ltd | 固体撮像素子およびその製造方法 |
| JP2008066409A (ja) * | 2006-09-05 | 2008-03-21 | Sony Corp | 固体撮像装置及びその製造方法 |
| JP2008091660A (ja) * | 2006-10-03 | 2008-04-17 | Fujifilm Corp | 撮像装置 |
| US7544982B2 (en) | 2006-10-03 | 2009-06-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image sensor device suitable for use with logic-embedded CIS chips and methods for making the same |
| JP5159120B2 (ja) | 2007-02-23 | 2013-03-06 | キヤノン株式会社 | 光電変換装置およびその製造方法 |
| JP2009146957A (ja) | 2007-12-12 | 2009-07-02 | Panasonic Corp | 固体撮像装置及び固体撮像装置の製造方法 |
| CN101494233A (zh) | 2008-01-24 | 2009-07-29 | 索尼株式会社 | 固态摄像装置及其制造方法 |
| JP4725614B2 (ja) | 2008-01-24 | 2011-07-13 | ソニー株式会社 | 固体撮像装置 |
| JP2009218374A (ja) | 2008-03-11 | 2009-09-24 | Panasonic Corp | 固体撮像装置 |
| JP2009224361A (ja) * | 2008-03-13 | 2009-10-01 | Panasonic Corp | 固体撮像装置及びその製造方法 |
| JP5357441B2 (ja) * | 2008-04-04 | 2013-12-04 | キヤノン株式会社 | 固体撮像装置の製造方法 |
| JP2009283482A (ja) | 2008-05-19 | 2009-12-03 | Sony Corp | 固体撮像装置 |
| JP2009283634A (ja) * | 2008-05-21 | 2009-12-03 | Canon Inc | 光電変換装置及び撮像システム |
| JP5402083B2 (ja) * | 2008-09-29 | 2014-01-29 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
| US8193555B2 (en) * | 2009-02-11 | 2012-06-05 | Megica Corporation | Image and light sensor chip packages |
| JP5651986B2 (ja) * | 2010-04-02 | 2015-01-14 | ソニー株式会社 | 固体撮像装置とその製造方法、並びに電子機器及びカメラモジュール |
| WO2012026292A1 (ja) * | 2010-08-24 | 2012-03-01 | 富士フイルム株式会社 | 固体撮像装置 |
-
2011
- 2011-08-09 JP JP2011173963A patent/JP6029266B2/ja active Active
-
2012
- 2012-08-03 US US13/566,781 patent/US8692345B2/en active Active
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