JP5907011B2 - 光センサ - Google Patents
光センサ Download PDFInfo
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- JP5907011B2 JP5907011B2 JP2012197339A JP2012197339A JP5907011B2 JP 5907011 B2 JP5907011 B2 JP 5907011B2 JP 2012197339 A JP2012197339 A JP 2012197339A JP 2012197339 A JP2012197339 A JP 2012197339A JP 5907011 B2 JP5907011 B2 JP 5907011B2
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- 230000003287 optical effect Effects 0.000 title claims description 29
- 230000005855 radiation Effects 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 42
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/0204—Compact construction
- G01J1/0209—Monolithic
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/0271—Housings; Attachments or accessories for photometers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
- G01J1/0437—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings using masks, aperture plates, spatial light modulators, spatial filters, e.g. reflective filters
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
- G01J1/0462—Slit arrangements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0488—Optical or mechanical part supplementary adjustable parts with spectral filtering
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/06—Restricting the angle of incident light
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/4228—Photometry, e.g. photographic exposure meter using electric radiation detectors arrangements with two or more detectors, e.g. for sensitivity compensation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
- G01N21/552—Attenuated total reflection
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01W—METEOROLOGY
- G01W1/00—Meteorology
- G01W1/12—Sunshine duration recorders
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01W—METEOROLOGY
- G01W1/00—Meteorology
- G01W1/14—Rainfall or precipitation gauges
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/201—Filters in the form of arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60S—SERVICING, CLEANING, REPAIRING, SUPPORTING, LIFTING, OR MANOEUVRING OF VEHICLES, NOT OTHERWISE PROVIDED FOR
- B60S1/00—Cleaning of vehicles
- B60S1/02—Cleaning windscreens, windows or optical devices
- B60S1/04—Wipers or the like, e.g. scrapers
- B60S1/06—Wipers or the like, e.g. scrapers characterised by the drive
- B60S1/08—Wipers or the like, e.g. scrapers characterised by the drive electrically driven
- B60S1/0818—Wipers or the like, e.g. scrapers characterised by the drive electrically driven including control systems responsive to external conditions, e.g. by detection of moisture, dirt or the like
- B60S1/0822—Wipers or the like, e.g. scrapers characterised by the drive electrically driven including control systems responsive to external conditions, e.g. by detection of moisture, dirt or the like characterized by the arrangement or type of detection means
- B60S1/0833—Optical rain sensor
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Environmental Sciences (AREA)
- Biodiversity & Conservation Biology (AREA)
- Ecology (AREA)
- Atmospheric Sciences (AREA)
- Hydrology & Water Resources (AREA)
- General Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Chemical & Material Sciences (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Light Receiving Elements (AREA)
- Spectrometry And Color Measurement (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
(第1実施形態)
図1〜図3に基づいて、本実施形態に係る光センサを説明する。光センサ100は、要部として、受光部10と、規定部30と、選定部50と、を有する。規定部30は、受光部10に入射する入射光の入射角度を規定し、選定部50は、入射光の波長を選定する機能を果たす。本実施形態に係る光センサ100は、上記した主要部10〜50の他に、発光部70と収納部80を有する。図1に示すように、収納部80はフロントウインドの内壁面に搭載され、収納部80とフロントウインドとによって構成される収納空間内に、受光部10、規定部30、選定部50、及び、発光部70それぞれが設けられている。受光部10には、フロントウインド、規定部30、及び、選定部50を介した車外の光と、発光部70から照射された光とが入射される。
30・・・規定部
32・・・遮光膜
33・・・開口部
50・・・規定部
51・・・スリット
100・・・光センサ
Claims (5)
- 受光部(10)と、
該受光部に入射する入射光の入射角度を規定する規定部(30)と、
前記入射光の波長を選定する選定部(50)と、を有する光センサであって、
前記規定部、及び、前記選定部それぞれは、前記受光部の上方に設けられた同一の遮光膜(32)に形成されており、
前記規定部は、前記遮光膜に形成された開口部(33)を有し、
前記選定部は、前記開口部によって囲まれた領域内に設けられた、前記遮光膜から成るスリット(51)を有しており、
前記受光部を複数有し、
複数の前記受光部(12〜14)それぞれに対応するスリット(52〜54)によって選定される入射光の波長は、異なり、
複数の前記受光部の内の1つとして、雨量を検出するレインセンサに適用されるレインセンサ用受光部(12)を有し、
透明板に光を照射して、該透明板にて反射された反射光を前記レインセンサ用受光部に入射させる発光部(70)を有し、
前記レインセンサ用受光部に対応するスリット(52)は、前記発光部にて照射される光に主として含まれる波長帯域を選定し、
複数の前記受光部の内の1つとして、光の入射角度を検出する角度センサに適用される角度センサ用受光部(13)を有し、
前記角度センサ用受光部に対応するスリット(53)は、前記発光部にて照射される光に主として含まれる波長帯域を除く波長帯域を選定することを特徴とする光センサ。 - 複数の前記受光部の内の1つとして、日射量を検出する日射センサに適用される日射センサ用受光部(14)を有し、
前記日射センサ用受光部に対応するスリット(54)は、赤外線を選定することを特徴とする請求項1に記載の光センサ。 - 前記遮光膜は、前記受光部の上方に所定の間隔を空けて複数積層され、
前記規定部、及び、前記選定部それぞれは、複数の前記遮光膜の内の同一の少なくとも1つに形成されており、
前記開口部は、複数の前記遮光膜それぞれに形成され、
前記スリットは、前記規定部と前記選定部とが共有する遮光膜から成ることを特徴とする請求項1または請求項2に記載の光センサ。 - 前記規定部、及び、前記選定部それぞれは、複数の前記遮光膜の内の同一の少なくとも2つに形成されており、
前記レインセンサ用受光部に対応するスリット(52)は、少なくとも2つの前記遮光膜に形成されていることを特徴とする請求項3に記載の光センサ。 - 複数の前記受光部それぞれに対応する開口部によって規定される入射光の入射角度は、異なっていることを特徴とする請求項1〜4いずれか1項に記載の光センサ。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012197339A JP5907011B2 (ja) | 2012-09-07 | 2012-09-07 | 光センサ |
DE112013005039.0T DE112013005039B4 (de) | 2012-09-07 | 2013-09-05 | Optischer Sensor |
PCT/JP2013/005270 WO2014038206A1 (ja) | 2012-09-07 | 2013-09-05 | 光センサ |
CN201380039851.0A CN104508438B (zh) | 2012-09-07 | 2013-09-05 | 光传感器 |
US14/406,541 US9166081B2 (en) | 2012-09-07 | 2013-09-05 | Optical sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012197339A JP5907011B2 (ja) | 2012-09-07 | 2012-09-07 | 光センサ |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014052302A JP2014052302A (ja) | 2014-03-20 |
JP2014052302A5 JP2014052302A5 (ja) | 2014-11-06 |
JP5907011B2 true JP5907011B2 (ja) | 2016-04-20 |
Family
ID=50236835
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012197339A Expired - Fee Related JP5907011B2 (ja) | 2012-09-07 | 2012-09-07 | 光センサ |
Country Status (5)
Country | Link |
---|---|
US (1) | US9166081B2 (ja) |
JP (1) | JP5907011B2 (ja) |
CN (1) | CN104508438B (ja) |
DE (1) | DE112013005039B4 (ja) |
WO (1) | WO2014038206A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3211453A1 (en) * | 2016-02-26 | 2017-08-30 | ams AG | Optical proximity sensor arrangement and method for producing an optical proximity sensor arrangement |
CN109964321A (zh) * | 2016-10-13 | 2019-07-02 | 六度空间有限责任公司 | 用于室内定位的方法和设备 |
CN106686215B (zh) * | 2016-12-06 | 2022-03-25 | Oppo广东移动通信有限公司 | 传感器组件以及移动终端 |
TWI637502B (zh) * | 2017-12-05 | 2018-10-01 | 義明科技股份有限公司 | 光學感測裝置以及光學感測模組 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06177416A (ja) * | 1992-12-07 | 1994-06-24 | Nippondenso Co Ltd | 光センサー |
DE4406398A1 (de) | 1994-02-26 | 1995-08-31 | Bosch Gmbh Robert | Regensensor |
US5428215A (en) * | 1994-05-27 | 1995-06-27 | Her Majesty The Queen In Right Of Canada, As Represented By Minister Of National Defence Of Her Majesty's Canadian Government | Digital high angular resolution laser irradiation detector (HARLID) |
DE19933642A1 (de) * | 1999-07-17 | 2001-03-08 | Bosch Gmbh Robert | Lichtempfindliche Sensoreinheit, insbesondere zum automatischen Schalten von Beleuchtungseinrichtungen |
JP2004198214A (ja) * | 2002-12-18 | 2004-07-15 | Denso Corp | 雨滴および光検出装置 |
JP2005233728A (ja) * | 2004-02-18 | 2005-09-02 | Denso Corp | 光センサ装置 |
JP4772585B2 (ja) | 2006-05-10 | 2011-09-14 | 浜松ホトニクス株式会社 | 光検出器 |
DE102006040790B4 (de) | 2006-08-31 | 2012-04-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Reflexkoppler mit integriertem organischen Lichtemitter sowie Verwendung eines solchen Reflexkopplers |
JP5300344B2 (ja) | 2007-07-06 | 2013-09-25 | キヤノン株式会社 | 光検出素子及び撮像素子、光検出方法及び撮像方法 |
JP4621270B2 (ja) | 2007-07-13 | 2011-01-26 | キヤノン株式会社 | 光学フィルタ |
CN101911315B (zh) * | 2007-12-25 | 2012-06-06 | 精工电子有限公司 | 光检测装置以及图像显示装置 |
KR101776955B1 (ko) * | 2009-02-10 | 2017-09-08 | 소니 주식회사 | 고체 촬상 장치와 그 제조 방법, 및 전자 기기 |
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2012
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2013
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- 2013-09-05 CN CN201380039851.0A patent/CN104508438B/zh not_active Expired - Fee Related
- 2013-09-05 US US14/406,541 patent/US9166081B2/en not_active Expired - Fee Related
- 2013-09-05 WO PCT/JP2013/005270 patent/WO2014038206A1/ja active Application Filing
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US20150179830A1 (en) | 2015-06-25 |
DE112013005039T5 (de) | 2015-07-30 |
DE112013005039B4 (de) | 2022-07-21 |
WO2014038206A1 (ja) | 2014-03-13 |
JP2014052302A (ja) | 2014-03-20 |
CN104508438B (zh) | 2016-07-13 |
US9166081B2 (en) | 2015-10-20 |
CN104508438A (zh) | 2015-04-08 |
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