JP4772585B2 - 光検出器 - Google Patents
光検出器 Download PDFInfo
- Publication number
- JP4772585B2 JP4772585B2 JP2006131728A JP2006131728A JP4772585B2 JP 4772585 B2 JP4772585 B2 JP 4772585B2 JP 2006131728 A JP2006131728 A JP 2006131728A JP 2006131728 A JP2006131728 A JP 2006131728A JP 4772585 B2 JP4772585 B2 JP 4772585B2
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- JP
- Japan
- Prior art keywords
- light
- layer
- antenna
- photodetector
- antenna layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 20
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 claims description 14
- 230000003287 optical effect Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 184
- 230000031700 light absorption Effects 0.000 description 29
- 230000000737 periodic effect Effects 0.000 description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004262 HgTe Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Spectrometry And Color Measurement (AREA)
- Light Receiving Elements (AREA)
Description
Claims (7)
- 半導体基板と、
前記半導体基板上に形成され、受光面を有するとともに受光量に応じた量の電荷を発生する受光層と、
前記受光層上に絶縁層を介して形成され、当該受光層の受光面に対向する物理的又は光学的な貫通孔を有するとともに表面プラズモン共鳴を発生させる複数のアンテナ層と、
を備え、
前記アンテナ層には、前記受光面を露出させる孔を前記絶縁層が有することにより、それぞれ前記受光層で発生した電荷を電流信号として出力させるための手段が設けられており、
前記複数のアンテナ層の表面には所定の規則に従ったパターンがそれぞれ形成されており、
前記複数のアンテナ層のうち少なくとも2つにおいては、前記パターンが互いに異なっていることを特徴とする光検出器。 - 前記各アンテナ層は複数の凸部と当該凸部間に位置する凹部とを有しており、前記凸部および前記凹部が前記パターンを形成しており、前記貫通孔は前記凹部に設けられていることを特徴とする請求項1記載の光検出器。
- 前記各アンテナ層は前記貫通孔を複数有しており、当該複数の貫通孔が前記パターンを形成していることを特徴とする請求項1記載の光検出器。
- 前記凸部は所定の間隔で配置されており、当該所定の間隔が前記複数のアンテナ層のうち少なくとも2つにおいて互いに異なっていることを特徴とする請求項2記載の光検出器。
- 前記貫通孔は所定の間隔で配置されており、当該所定の間隔が前記複数のアンテナ層のうち少なくとも2つにおいて互いに異なっていることを特徴とする請求項3記載の光検出器。
- 前記貫通孔の幅は前記入射光の波長よりも短いことを特徴とする請求項1〜5のいずれか一項に記載の光検出器。
- 前記受光層は、その両面にバイアス電圧が印加されることを特徴とする請求項1〜6のいずれか一項に記載の光検出器。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006131728A JP4772585B2 (ja) | 2006-05-10 | 2006-05-10 | 光検出器 |
US11/798,040 US7557336B2 (en) | 2006-05-10 | 2007-05-09 | Photodetector having first and second antenna areas with patterns having different cycle intervals |
CNA2007101022879A CN101071077A (zh) | 2006-05-10 | 2007-05-10 | 光检测器 |
CN201110008101XA CN102163628A (zh) | 2006-05-10 | 2007-05-10 | 光检测器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006131728A JP4772585B2 (ja) | 2006-05-10 | 2006-05-10 | 光検出器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007303927A JP2007303927A (ja) | 2007-11-22 |
JP4772585B2 true JP4772585B2 (ja) | 2011-09-14 |
Family
ID=38684245
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006131728A Expired - Fee Related JP4772585B2 (ja) | 2006-05-10 | 2006-05-10 | 光検出器 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7557336B2 (ja) |
JP (1) | JP4772585B2 (ja) |
CN (2) | CN102163628A (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8482197B2 (en) | 2006-07-05 | 2013-07-09 | Hamamatsu Photonics K.K. | Photocathode, electron tube, field assist type photocathode, field assist type photocathode array, and field assist type electron tube |
JP4805043B2 (ja) * | 2006-07-05 | 2011-11-02 | 浜松ホトニクス株式会社 | 光電陰極、光電陰極アレイ、および電子管 |
JP5273932B2 (ja) * | 2007-03-23 | 2013-08-28 | キヤノン株式会社 | 光検出素子及び光検出方法、撮像素子及び撮像方法 |
WO2009088071A1 (ja) * | 2008-01-10 | 2009-07-16 | Nec Corporation | 半導体受光素子及び光通信デバイス |
JP2010271049A (ja) * | 2009-05-19 | 2010-12-02 | Sony Corp | 2次元固体撮像装置 |
US8193497B2 (en) | 2010-02-12 | 2012-06-05 | Samsung Electronics Co., Ltd. | Near-infrared photodetectors, image sensors employing the same, and methods of manufacturing the same |
CN103081126A (zh) | 2010-06-08 | 2013-05-01 | 太平洋银泰格拉泰德能源公司 | 具有增强场和电子发射的光学天线 |
EP2408036A1 (en) * | 2010-07-16 | 2012-01-18 | Hitachi, Ltd. | Device responsive to electromagnetic radiation |
FR2966925B1 (fr) * | 2010-11-03 | 2012-11-02 | Commissariat Energie Atomique | Detecteur infrarouge a base de micro-planches bolometriques suspendues |
JP5740997B2 (ja) * | 2011-01-17 | 2015-07-01 | 株式会社リコー | 遠赤外線検出素子及び遠赤外線検出装置 |
US8779483B2 (en) * | 2011-02-07 | 2014-07-15 | Aptina Imaging Corporation | Spectrally tuned plasmonic light collectors |
JP5871829B2 (ja) | 2012-03-06 | 2016-03-01 | 三菱電機株式会社 | 光電変換素子および光電変換素子アレイ |
CN102651421B (zh) * | 2012-05-04 | 2015-01-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | 光谱选择性光电探测器及其制备方法 |
WO2013183178A1 (ja) * | 2012-06-05 | 2013-12-12 | 浜松ホトニクス株式会社 | 光検出器 |
JP5907011B2 (ja) | 2012-09-07 | 2016-04-20 | 株式会社デンソー | 光センサ |
US9236522B2 (en) * | 2012-11-30 | 2016-01-12 | Robert Bosch Gmbh | MEMS infrared sensor including a plasmonic lens |
JP6245495B2 (ja) | 2013-05-23 | 2017-12-13 | オリンパス株式会社 | 光検出器 |
US9239507B2 (en) * | 2013-10-25 | 2016-01-19 | Forelux Inc. | Grating based optical coupler |
CN103776790B (zh) * | 2014-02-25 | 2016-03-23 | 重庆大学 | 一种基于石墨烯纳米天线的红外光谱增强及探测方法及装置 |
EP3015833B1 (en) * | 2014-10-31 | 2020-01-22 | Emberion Oy | A sensing apparatus |
US9588044B2 (en) * | 2015-07-16 | 2017-03-07 | Globalfoundries Inc. | Inline buried metal void detection by surface plasmon resonance (SPR) |
EP3493283A1 (en) * | 2017-12-04 | 2019-06-05 | Université d'Aix Marseille | Plasmonic rectenna device and method of manufacturing |
JP7150275B2 (ja) * | 2019-02-25 | 2022-10-11 | 株式会社デンソー | 受光素子 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0722603A (ja) * | 1993-06-22 | 1995-01-24 | Toshiba Corp | 光結線装置 |
JP3683445B2 (ja) | 1999-10-08 | 2005-08-17 | 日本板硝子株式会社 | 光分波器 |
JP4160226B2 (ja) * | 1999-12-28 | 2008-10-01 | 株式会社東芝 | 半導体レーザ装置 |
FR2803950B1 (fr) * | 2000-01-14 | 2002-03-01 | Centre Nat Rech Scient | Dispositif de photodetection a microresonateur metal- semiconducteur vertical et procede de fabrication de ce dispositif |
US6441298B1 (en) * | 2000-08-15 | 2002-08-27 | Nec Research Institute, Inc | Surface-plasmon enhanced photovoltaic device |
US7351374B2 (en) * | 2000-10-17 | 2008-04-01 | President And Fellows Of Harvard College | Surface plasmon enhanced illumination apparatus having non-periodic resonance configurations |
GB0217900D0 (en) | 2002-08-02 | 2002-09-11 | Qinetiq Ltd | Optoelectronic devices |
WO2005057247A2 (en) * | 2003-12-05 | 2005-06-23 | University Of Pittsburgh | Metallic nano-optic lenses and beam shaping devices |
KR100853067B1 (ko) * | 2004-04-05 | 2008-08-19 | 닛본 덴끼 가부시끼가이샤 | 포토 다이오드와 그 제조 방법 |
-
2006
- 2006-05-10 JP JP2006131728A patent/JP4772585B2/ja not_active Expired - Fee Related
-
2007
- 2007-05-09 US US11/798,040 patent/US7557336B2/en not_active Expired - Fee Related
- 2007-05-10 CN CN201110008101XA patent/CN102163628A/zh active Pending
- 2007-05-10 CN CNA2007101022879A patent/CN101071077A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
US20070262239A1 (en) | 2007-11-15 |
JP2007303927A (ja) | 2007-11-22 |
US7557336B2 (en) | 2009-07-07 |
CN102163628A (zh) | 2011-08-24 |
CN101071077A (zh) | 2007-11-14 |
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