CN104508438A - 光传感器 - Google Patents

光传感器 Download PDF

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CN104508438A
CN104508438A CN201380039851.0A CN201380039851A CN104508438A CN 104508438 A CN104508438 A CN 104508438A CN 201380039851 A CN201380039851 A CN 201380039851A CN 104508438 A CN104508438 A CN 104508438A
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light
accepting part
light accepting
slit
optical sensor
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CN104508438B (zh
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杉浦真纪子
吉田贵彦
大塚澄
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Denso Corp
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    • G—PHYSICS
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    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0204—Compact construction
    • G01J1/0209—Monolithic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
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    • G01J1/02—Details
    • G01J1/0271—Housings; Attachments or accessories for photometers
    • G—PHYSICS
    • G01—MEASURING; TESTING
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    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
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    • G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
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    • G—PHYSICS
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    • G—PHYSICS
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    • G01J1/00—Photometry, e.g. photographic exposure meter
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    • G01J1/0488—Optical or mechanical part supplementary adjustable parts with spectral filtering
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    • G01J1/00—Photometry, e.g. photographic exposure meter
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    • G01J1/06—Restricting the angle of incident light
    • G—PHYSICS
    • G01—MEASURING; TESTING
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    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4228—Photometry, e.g. photographic exposure meter using electric radiation detectors arrangements with two or more detectors, e.g. for sensitivity compensation
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    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01W—METEOROLOGY
    • G01W1/00—Meteorology
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01W—METEOROLOGY
    • G01W1/00—Meteorology
    • G01W1/14—Rainfall or precipitation gauges
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
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    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
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    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
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    • B60S1/04—Wipers or the like, e.g. scrapers
    • B60S1/06—Wipers or the like, e.g. scrapers characterised by the drive
    • B60S1/08—Wipers or the like, e.g. scrapers characterised by the drive electrically driven
    • B60S1/0818—Wipers or the like, e.g. scrapers characterised by the drive electrically driven including control systems responsive to external conditions, e.g. by detection of moisture, dirt or the like
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    • B60S1/0833—Optical rain sensor

Abstract

光传感器(100)具有受光部(10)、限定部(30)和选定部(50)。限定部(30)限定朝受光部(10)入射的入射光的入射角度。选定部(50)选定朝受光部(10)入射的入射光的波长。限定部(30)具备设置于受光部(10)的上方的遮光膜(32)，且具有形成于遮光膜(32)的开口部(33)。选定部(50)具有设置在由开口部(33)围成的区域内的、且形成于遮光膜(32)的狭缝(51)。

Description

光传感器
本申请以于2012年9月7日提出申请的日本专利申请号2012－197339号为基础，将其记载内容援引到本申请中。
技术领域
本申请涉及具有受光部、限定朝受光部入射的入射光的入射角度的限定部、以及选定入射光的波长的选定部的光传感器。
背景技术
以往，例如如专利文献1所示，提案有包括光电二极管、限制入射光相对于光电二极管的受光区域的入射角度的角度限制滤波器、以及透射入射光中的特定波长的光的光带通滤波器的光学传感器。角度限制滤波器由遮光物质形成，光带通滤波器由多层薄膜形成。角度限制滤波器形成在光电二极管上，光带通滤波器形成在角度限制滤波器上。
现有技术文献
专利文献
专利文献1：日本特开2011－203247号公报
发明内容
在专利文献1所公开的光学传感器中，角度限制滤波器由遮光物质形成，光带通滤波器由多层薄膜形成。角度限制滤波器与光带通滤波器分开形成，因此光学传感器的体型增大。
本申请的目的在于提供一种抑制了体型的增大的光传感器。
在本申请的一例中，光传感器具有受光部；限定部，限定朝受光部入射的入射光的入射角度；以及选定部，选定入射光的波长，其中，限定部以及选定部共有设置于受光部的上方的遮光膜。限定部具有形成于遮光膜的开口部，选定部具有设置在由开口部围成的区域内的、形成于遮光膜的狭缝。
据此，与限定部与选定部分开形成的结构相比，可抑制光传感器的体型的增大。
附图说明
图1是示出实施方式所涉及的光传感器的概要结构的剖视图。
图2是用于对光传感器的主要部分进行说明的剖视图。
图3是用于对开口部和狭缝进行说明的俯视图。
图4是用于对狭缝的变形例进行说明的剖视图。
图5是用于对狭缝的变形例进行说明的剖视图。
图6是用于对狭缝的变形例进行说明的俯视图。
具体实施方式
以下，在本申请中，基于附图对搭载于车辆的前风窗的情况下的实施方式进行说明。前风窗相当于透明板。基于图1～图3对本实施方式所涉及的光传感器进行说明。
光传感器100具有受光部10、限定部30以及选定部50。限定部30限定朝受光部10入射的入射光的入射角度，选定部50选定入射光的波长。光传感器100除了受光部10、限定部30和选定部50之外，还具有发光部70和收纳部80。如图1所示，收纳部80搭载于前风窗的内壁面，在由收纳部80和前风窗构成的收纳空间内设置有受光部10、限定部30、选定部50以及发光部70。经由前风窗、限定部30以及选定部50的车外的光以及从发光部70照射的光朝受光部10入射。
受光部10将由限定部30限定了入射角度且由选定部50选定了波长的入射光转换成电信号。受光部10是具有PN结的光电二极管，形成于半导体基板11的形成面11a。受光部10具有三个受光部12～14，受光部12～14各自的受光范围(能够检测的光的波段)不同。
限定部30具有：具有透光性的透光膜31；具有遮光性的遮光膜32；以及形成于该遮光膜32的开口部33。如图2所示，遮光膜32由第一膜32a、第二膜32b和第三膜32c构成，且按照上述顺序在形成面11a(受光部10)的上方隔开预定的间隔层叠。开口部33具有与受光部12～14分别对应的开口部34～36，如图2中用虚线箭头表示的那样，由开口部34～36限定的入射光的入射角度不同。此外，如图3中用虚线表示的那样，开口部34～36各自的开口面积也不同。
选定部50共有限定部30所具有的遮光膜32，且具有形成于该共有的遮光膜32的狭缝51。如上所述，第一膜32a、第二膜32b和第三膜32c在形成面11a的上方隔开预定的间隔层叠。选定部50与限定部30共有遮光膜32中的、离开形成面11a的第二膜32b和第三膜32c，在所共有的第二膜32b与第三膜32c上形成有狭缝51。
狭缝51位于由开口部33围成的区域内，具有与受光部12～14分别对应的狭缝52～54。由狭缝52～54选定的入射光的波长不同，第1狭缝52选定由发光部70照射的光中所主要包含的波段，第2狭缝53选定除了由发光部70照射的光中所主要包含的波段以外的波段。并且，第3狭缝54选定红外线。如图2所示，在第二膜32b和第三膜32c上分别形成第1狭缝52，在第三膜32c上形成狭缝53、54。
如图3所示，狭缝52～54在由开口部33围成的区域内的遮光膜32上形成有多个，其平面形状为矩形。由该多个狭缝51形成利用了表面等离子共振的滤波器，由该滤波器决定所选定的入射光的波长。
表面等离子存在于两个不同的物质的界面，当具有与该表面等离子共振的能量的光、即具有共振的波段的光朝界面入射时，与表面等离子共振，光的强度增强。其结果，强度增强了的光朝受光部10入射。另外，表面等离子依存于形成界面的两个物质的物性、形状以及界面与界面的间隔。因此，通过适当变更形成界面的物质、适当变更界面的形状、以及适当变更界面与界面的间隔，能够选择强度强的波段的光。如果用本实施方式来说，则通过适当变更构成透光膜31和遮光膜32的物质、适当变更狭缝51的形状以及适当变更狭缝51的间隔，能够选择强度强的波段的光。
发光部70朝前风窗照射光，使由前风窗反射后的反射光朝第1受光部12入射。本实施方式所涉及的发光部70是LED，所照射的光的波段为比可见光长的波长。发光部70设置于半导体基板11，但也可以不设置于与受光部10相同的半导体基板11。发光部70也可以设置于与受光部10不同的基板。
收纳部80收纳受光部10、限定部30、选定部50以及发光部70的各个，并决定受光部10与前风窗的相对位置。收纳部80由吸收从发光部70照射的光的物质构成。
接着，对由光传感器100构成的各种传感器进行说明。如上所述，受光部10具有三个受光部12～14，限定部30的开口部33具有三个开口部34～36，选定部50的狭缝51具有三个狭缝52～54。利用第1受光部12、第1开口部34、第1狭缝52以及发光部70构成检测雨量的雨传感器，利用第2受光部13、第2开口部35以及第2狭缝53构成检测朝车辆入射的光的入射角度的角度传感器。并且，利用第3受光部14、第3开口部36以及第3狭缝54构成检测日射量的日射传感器。另外，第1受光部12相当于雨传感器用受光部，第2受光部13相当于角度传感器用受光部，第3受光部14相当于日射传感器用受光部。
接着，对本实施方式所涉及的光传感器100的作用效果进行说明。如上所述，限定部30以及选定部50分别共有遮光膜32，限定部30具有形成于遮光膜32的开口部33，选定部50具有由遮光膜32构成的狭缝51。据此，与限定部和选定部分开形成的结构相比，能够抑制光传感器100的体型的增大。
由狭缝52～54选定的入射光的波长不同。据此，利用受光部12～14能够检测波长不同的光。
与第1受光部12对应的第1狭缝52选定由发光部70照射的光中所主要包含的波段。据此，能够抑制具有由发光部70照射的光中所主要包含的波段以外的波段的光朝第1受光部12入射。因此，能够抑制干扰光朝第1受光部12入射，从而能够抑制雨量的检测精度的降低。
与第2受光部13对应的第2狭缝53选定除了由发光部70照射的光中所主要包含的波段以外的波段。据此，能够抑制由发光部70照射的光朝第2受光部13入射。因此，能够抑制光的入射角度的检测精度的降低。
与第3受光部14对应的第3狭缝54选定红外线。红外线的辐射具有对对象物赋予热的效果。因而，通过利用第3受光部14检测红外线，能够检测因辐射而引起的光传感器100的温度上升。
在形成面11a的上方层叠第一膜32a、第二膜32b和第三膜32c，在第一膜32a、第二膜32b和第三膜32c上分别形成有开口部33。据此，与在形成面的上方层叠一个遮光膜、在该遮光膜上形成开口部的结构相比，能够缩窄入射角度。
限定部30以及选定部50分别共有第二膜32b和第三膜32c，与第1受光部12对应的第1狭缝52形成于第二膜32b和第三膜32c。据此，与第1狭缝形成于一个遮光膜的结构相比，能够缩窄朝第1受光部12入射的入射光的半幅值，能够抑制干扰光朝第1受光部12入射。因此，能够抑制雨量的检测精度的降低。此外，半幅值是指从入射光强度的峰值到峰值的一半的值为止的宽度。
由与受光部12～14分别对应的开口部34～36限定的入射光的入射角度不同。据此，利用受光部12～14的各个能够检测入射角度不同的光。
以上，对本申请的优选实施方式进行了说明，但本申请并不受到上述的实施方式任何限制，能够在不脱离本申请的主旨的范围内进行各种变形并加以实施。
在本实施方式中，示出了狭缝51的平面形状为矩形的例子。但是，作为狭缝51的平面形状，并不限定于上述例子，例如，也能够采用圆、椭圆、多边形等。
在本实施方式中，示出了利用在由开口部33围成的区域内的遮光膜32上形成多个的狭缝51来形成利用了表面等离子共振的滤波器的例子。但是，作为由狭缝51形成的滤波器，并不限定于上述例子。例如，如图4～图6所示，也能够利用狭缝51形成利用了衍射光栅的滤波器。
当朝衍射光栅入射光时，利用构成衍射光栅的狭缝51衍射光。被各狭缝51衍射后的光干涉，特定波长的光的强度增强。其结果，强度增强了的光朝受光部10入射。另外，强度增强的特定波长依存于狭缝51的宽度d以及狭缝51的形状。因此，通过适当变更狭缝51的宽度d以及适当变更狭缝51的形状，能够选择强度增强的波段的光。
在本实施方式中，示出了第一膜32a、第二膜32b和第三膜32c在形成面11a的上方隔开预定的间隔层叠的例子。但是，作为在形成面11a的上方层叠的遮光膜32，并不限定于上述例子。例如，可以为1层，可以为2层，也可以为4层。
在本实施方式中，示出了选定部50与限定部30共有三个遮光膜32中的、离开形成面11a的第二膜32b和第三膜32c的例子。但是，作为所共有的数量，并不限定于上述例子，只要是1层以上即可。
在本实施方式中，示出了由狭缝52～54选定的入射光的波长不同的例子。但是，由狭缝52～54选定的入射光的波长也可以相同。
在本实施方式中，示出了在第二膜32b和第三膜32c上分别形成第1狭缝52，在第三膜32c上形成狭缝53、54的例子。但是，只要在选定部50与限定部30共有的多个遮光膜32中的至少一个上形成狭缝52～54即可。
在本实施方式中，示出了由开口部34～36限定的入射光的入射角度不同的例子。但是，由开口部34～36限定的入射光的入射角度也可以相同。
在本实施方式中，示出了开口部34～36各自的开口面积不同的例子。但是，开口部34～36各自的开口面积也可以相同。
在本实施方式中，示出了受光部10具有受光部12～14的例子。但是，受光部的数量并不限定于上述例子。
在本实施方式中，示出了利用光传感器100构成雨传感器、角度传感器以及日射传感器的例子。但是，由光传感器100构成的传感器并不限定于上述例子。此外，所构成的传感器的数量并不限定于上述例子。

Claims (8)

1.一种光传感器，具有：
受光部(10)；
限定部(30)，限定朝所述受光部入射的入射光的入射角度；以及
选定部(50)，选定所述入射光的波长，
所述限定部以及所述选定部共有设置于所述受光部的上方的遮光膜(32)，
所述限定部具有形成于所述遮光膜的开口部(33)，
所述选定部具有狭缝(51)，该狭缝(51)设置在由所述开口部围成的区域内，并形成于所述遮光膜。
2.如权利要求1所述的光传感器，其中，
所述受光部(10)具有多个受光部(12～14)，
所述狭缝(51)具有与多个受光部(12～14)分别对应的多个狭缝(52～54)，
由所述多个狭缝(52～54)选定的入射光的波长互不相同。
3.如权利要求2所述的光传感器，其中，
所述光传感器是还具有朝透明板照射光的发光部(70)的光传感器，
多个受光部(12～14)中的一个是应用于雨传感器的雨传感器用受光部(12)，该雨传感器为，由所述透明板反射后的反射光朝其入射来检测雨量，
与所述雨传感器用受光部(12)对应的狭缝(52)选定由所述发光部照射的光中所主要包含的波段。
4.如权利要求3所述的光传感器，其中，
多个受光部(12～14)中的一个是应用于检测光的入射角度的角度传感器的角度传感器用受光部(13)，
与所述角度传感器用受光部(13)对应的狭缝(53)选定除了由所述发光部照射的光中所主要包含的波段以外的波段。
5.如权利要求2至4中任一项所述的光传感器，其中，
多个受光部(12～14)中的一个是应用于检测日射量的日射传感器的日射传感器用受光部(14)，
与所述日射传感器用受光部(14)对应的狭缝(54)选定红外线。
6.如权利要求1至5中任一项所述的光传感器，其中，
所述遮光膜(32)具有在所述受光部的上方隔开预定的间隔而层叠的多个膜(32a～32c)，
所述限定部和所述选定部共有多个膜(32a～32c)中的至少一个，
在多个膜(32a～32c)上分别形成有所述开口部，
所述狭缝形成于所述限定部和所述选定部所共有的所述至少一个膜。
7.如权利要求6所述的光传感器，其中，
所述光传感器是还具有朝透明板照射光的发光部(70)的光传感器，
所述受光部是应用于雨传感器的雨传感器用受光部(12)，该雨传感器为，由所述透明板反射后的反射光朝其入射来检测雨量，
所述限定部和所述选定部共有多个膜(32a～32c)中的至少两个，
与所述雨传感器用受光部对应的狭缝(52)形成于所述限定部和所述选定部所共有的所述至少两个膜。
8.如权利要求1至7中任一项所述的光传感器，其中，
所述受光部(10)具有多个受光部(12～14)，
所述开口部(33)具有与多个受光部(12～14)分别对应的多个开口部(34～36)，
由所述多个开口部(34～36)限定的入射光的入射角度互不相同。
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