JP5745760B2 - イメージセンサ素子 - Google Patents
イメージセンサ素子 Download PDFInfo
- Publication number
- JP5745760B2 JP5745760B2 JP2009284476A JP2009284476A JP5745760B2 JP 5745760 B2 JP5745760 B2 JP 5745760B2 JP 2009284476 A JP2009284476 A JP 2009284476A JP 2009284476 A JP2009284476 A JP 2009284476A JP 5745760 B2 JP5745760 B2 JP 5745760B2
- Authority
- JP
- Japan
- Prior art keywords
- image sensor
- internal wiring
- substrate
- light detection
- sensor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000010410 layer Substances 0.000 claims description 166
- 239000000758 substrate Substances 0.000 claims description 71
- 238000001514 detection method Methods 0.000 claims description 60
- 239000012790 adhesive layer Substances 0.000 claims description 58
- 239000011229 interlayer Substances 0.000 claims description 42
- 239000010936 titanium Substances 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000000034 method Methods 0.000 description 39
- 238000004519 manufacturing process Methods 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000004907 flux Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003811 SiGeC Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
20 第2基板、
30 支持基板、
110 光検出領域、
120 ゲート構造、
130 層間絶縁層、
140 金属間誘電層、
150a、150b 接合層、
162 反射防止膜、
164 下部平坦化層、
170 カラーフィルタ、
175 上部平坦化層、
180 マイクロレンズ、
190 保護層、
1001 内部配線構造、
1005 反射構造、
1010 フォトレジストパターン、
1110 接着層パターン、
1120 導電層パターン、
1120r 反射層パターン、
1130 キャッピング層パターン。
Claims (10)
- 内部に複数の光検出領域を含む基板と、
前記基板の第1表面側において全ての前記光検出領域に対応してその上方に形成された複数の反射構造と、
前記基板の第1表面側の前記反射構造と同一面上に前記反射構造と隣接して形成され、前記反射構造より低い反射率を有する複数の内部配線構造と、
前記第1表面の反対側の第2表面側に設けられたマイクロレンズおよびカラーフィルタと、を含み、
前記反射構造は、前記光検出領域を通過した入射光の一部を反射して前記光検出領域に戻す、イメージセンサ素子。 - 前記反射構造は導電層を含み、
前記内部配線構造は、前記導電層、および前記導電層と前記基板との間の接着層を含み、
前記接着層は、前記内部配線構造の反射率を前記反射構造の反射率と比較して減少させる請求項1に記載のイメージセンサ素子。 - 前記反射構造は、前記基板の面に垂直な方向からみて前記光検出領域に整列され、前記光検出領域を通過した前記入射光の一部は前記反射構造上に入射する請求項1または2に記載のイメージセンサ素子。
- 前記反射構造は、前記基板の面に垂直な方向に沿って切断した断面が凹状である凹部、または当該断面が凸状である凸部を有する請求項1〜3のいずれか一つに記載のイメージセンサ素子。
- 前記反射構造は、第1反射構造を含み、
前記イメージセンサ素子は、さらに
前記第1反射構造を覆う第1層間絶縁層と、
前記光検出領域の上方で前記第1層間絶縁層上に形成され、前記第1反射構造から面内方向にオフセットされた第2反射構造と、を含み、
前記第2反射構造は、前記光検出領域を貫通し、前記第1反射構造によって反射されない前記入射光の一部を反射して前記光検出領域に戻す、請求項1〜4のいずれか一つに記載のイメージセンサ素子。 - 前記基板の第1表面側において、前記反射構造および前記光検出領域の間に積層された層間絶縁層を有し、
前記層間絶縁層は、前記内部配線構造と電気的に接続された内部のゲート構造を含み、
前記少なくとも一つのゲート構造は、前記光検出領域を貫通した前記入射光の一部が前記反射構造に行く経路を遮断しないように配置されている、請求項1〜5のいずれか一つに記載のイメージセンサ素子。 - 前記反射構造に隣接して前記層間絶縁層内に形成され、内部の少なくとも一つのゲート構造に整列されたリセスをさらに含み、
前記接着層を含む前記内部配線構造は、前記リセスの内部に延長されている、請求項6に記載のイメージセンサ素子。 - 前記接着層の一部は、前記リセスの側壁上に延長され、前記入射光の一部を反射して前記光検出領域に戻す、請求項7に記載のイメージセンサ素子。
- 前記内部配線構造に隣接して前記層間絶縁層内に形成され、前記基板内の前記光検出領域に整列された第2リセスをさらに含み、
前記反射構造は、前記第2リセス内に延長されている、請求項7に記載のイメージセンサ素子。 - 前記導電層はアルミニウムを含み、
前記接着層は、チタニウム、チタニウム窒化膜、またはチタニウムとチタニウム窒化膜の組み合わせを含む請求項2〜9のいずれか一つに記載のイメージセンサ素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2008-0128691 | 2008-12-17 | ||
KR1020080128691A KR101545638B1 (ko) | 2008-12-17 | 2008-12-17 | 이미지 센서 및 그 제조 방법, 이미지 센서를 포함하는 장치 및 그 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010147474A JP2010147474A (ja) | 2010-07-01 |
JP5745760B2 true JP5745760B2 (ja) | 2015-07-08 |
Family
ID=42239499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009284476A Active JP5745760B2 (ja) | 2008-12-17 | 2009-12-15 | イメージセンサ素子 |
Country Status (3)
Country | Link |
---|---|
US (3) | US8154062B2 (ja) |
JP (1) | JP5745760B2 (ja) |
KR (1) | KR101545638B1 (ja) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101545638B1 (ko) | 2008-12-17 | 2015-08-19 | 삼성전자 주식회사 | 이미지 센서 및 그 제조 방법, 이미지 센서를 포함하는 장치 및 그 제조 방법 |
JP5538807B2 (ja) * | 2009-10-13 | 2014-07-02 | キヤノン株式会社 | 光電変換装置、光電変換装置の製造方法、および撮像システム |
JP5538811B2 (ja) * | 2009-10-21 | 2014-07-02 | キヤノン株式会社 | 固体撮像素子 |
JP5279775B2 (ja) * | 2010-08-25 | 2013-09-04 | 株式会社東芝 | 半導体装置の製造方法 |
TW201210006A (en) * | 2010-08-25 | 2012-03-01 | Pixart Imaging Inc | Image sensing device |
KR101133154B1 (ko) | 2011-02-03 | 2012-04-06 | 디지털옵틱스 코포레이션 이스트 | 상이한 파장을 균일하게 수광하기 위한 차등 높이 실리콘을 포함하는 이면 조사 센서 패키지 |
KR101095945B1 (ko) | 2011-02-03 | 2011-12-19 | 테쎄라 노쓰 아메리카, 아이엔씨. | 상이한 파장을 균일하게 수광하기 위한 흡광 재료를 포함하는 이면 조사 센서 패키지 |
US8384168B2 (en) | 2011-04-21 | 2013-02-26 | Freescale Semiconductor, Inc. | Sensor device with sealing structure |
US8476087B2 (en) * | 2011-04-21 | 2013-07-02 | Freescale Semiconductor, Inc. | Methods for fabricating sensor device package using a sealing structure |
JP5909051B2 (ja) * | 2011-04-26 | 2016-04-26 | キヤノン株式会社 | 固体撮像素子及び撮像装置 |
JP5893302B2 (ja) * | 2011-09-01 | 2016-03-23 | キヤノン株式会社 | 固体撮像装置 |
JP5956866B2 (ja) * | 2011-09-01 | 2016-07-27 | キヤノン株式会社 | 固体撮像装置 |
JP6587581B2 (ja) * | 2011-09-01 | 2019-10-09 | キヤノン株式会社 | 固体撮像装置 |
US9099389B2 (en) * | 2012-02-10 | 2015-08-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for reducing stripe patterns |
US9046546B2 (en) | 2012-04-27 | 2015-06-02 | Freescale Semiconductor Inc. | Sensor device and related fabrication methods |
KR102109221B1 (ko) * | 2012-05-16 | 2020-05-11 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 고체 촬상 장치 및 전자 기기 |
US8889461B2 (en) * | 2012-05-29 | 2014-11-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | CIS image sensors with epitaxy layers and methods for forming the same |
US9040891B2 (en) | 2012-06-08 | 2015-05-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image device and methods of forming the same |
KR101348254B1 (ko) * | 2012-06-27 | 2014-01-16 | 포항공과대학교 산학협력단 | 적외선 투과필터 및 이를 포함하는 씨모스 이미지 센서 |
KR102023623B1 (ko) * | 2012-07-03 | 2019-09-23 | 삼성전자 주식회사 | 반도체 소자 형성 방법 |
NL2011568A (en) * | 2012-10-31 | 2014-05-06 | Asml Netherlands Bv | Sensor and lithographic apparatus. |
US8828779B2 (en) | 2012-11-01 | 2014-09-09 | United Microelectronics Corp. | Backside illumination (BSI) CMOS image sensor process |
JP6161258B2 (ja) | 2012-11-12 | 2017-07-12 | キヤノン株式会社 | 固体撮像装置およびその製造方法ならびにカメラ |
CN103066092A (zh) * | 2013-01-11 | 2013-04-24 | 陆伟 | 一种影像传感器晶圆背面处理方法 |
US8736006B1 (en) * | 2013-03-14 | 2014-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Backside structure for a BSI image sensor device |
JP6209890B2 (ja) * | 2013-07-29 | 2017-10-11 | ソニー株式会社 | 裏面照射型イメージセンサ、撮像装置、および電子機器 |
US9153717B2 (en) | 2013-08-09 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Backside illuminated photo-sensitive device with gradated buffer layer |
JP2016082133A (ja) * | 2014-10-20 | 2016-05-16 | ソニー株式会社 | 固体撮像素子及び電子機器 |
US10014333B2 (en) * | 2015-08-26 | 2018-07-03 | Semiconductor Components Industries, Llc | Back-side illuminated pixels with interconnect layers |
KR102444733B1 (ko) * | 2016-10-27 | 2022-09-16 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 촬상 소자 및 전자기기 |
JP7055544B2 (ja) * | 2016-11-29 | 2022-04-18 | ソニーセミコンダクタソリューションズ株式会社 | センサチップおよび電子機器 |
CN107833900A (zh) * | 2017-11-07 | 2018-03-23 | 德淮半导体有限公司 | 背照式互补金属氧化物半导体图像传感器及其制造方法 |
CN108258000A (zh) * | 2018-01-24 | 2018-07-06 | 德淮半导体有限公司 | 一种图像传感器及其形成方法 |
CN108987422A (zh) * | 2018-07-27 | 2018-12-11 | 深圳阜时科技有限公司 | 图像传感器及其制造方法、身份识别装置及设备 |
FR3084459B1 (fr) * | 2018-07-30 | 2020-07-10 | Silios Technologies | Capteur d'imagerie multispectrale pourvu de moyens de limitation de la diaphonie |
TWM596977U (zh) * | 2019-09-23 | 2020-06-11 | 神盾股份有限公司 | 積體化光學感測器 |
KR20210100413A (ko) * | 2020-02-06 | 2021-08-17 | 에스케이하이닉스 주식회사 | 이미지 센서 |
US20230230986A1 (en) * | 2020-04-20 | 2023-07-20 | Sony Semiconductor Solutions Corporation | Solid-state imaging element and electronic device |
KR20220051470A (ko) * | 2020-10-19 | 2022-04-26 | 삼성전자주식회사 | 반도체 패키지 및 이의 제조 방법 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02119476A (ja) * | 1988-10-28 | 1990-05-07 | Nec Corp | Irccd |
JP3759435B2 (ja) * | 2001-07-11 | 2006-03-22 | ソニー株式会社 | X−yアドレス型固体撮像素子 |
JP3722367B2 (ja) * | 2002-03-19 | 2005-11-30 | ソニー株式会社 | 固体撮像素子の製造方法 |
JP4123415B2 (ja) * | 2002-05-20 | 2008-07-23 | ソニー株式会社 | 固体撮像装置 |
JP4383959B2 (ja) * | 2003-05-28 | 2009-12-16 | キヤノン株式会社 | 光電変換装置およびその製造方法 |
JP4046067B2 (ja) * | 2003-11-04 | 2008-02-13 | ソニー株式会社 | 固体撮像素子の製造方法 |
KR100652379B1 (ko) | 2004-09-11 | 2006-12-01 | 삼성전자주식회사 | Cmos 이미지 센서 및 그 제조 방법 |
JP4826111B2 (ja) | 2005-03-17 | 2011-11-30 | ソニー株式会社 | 固体撮像素子および固体撮像素子の製造方法および画像撮影装置 |
US20070001100A1 (en) | 2005-06-30 | 2007-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Light reflection for backside illuminated sensor |
US8174014B2 (en) * | 2006-02-16 | 2012-05-08 | California Institute Of Technology | Apparatus and method of manufacture for depositing a composite anti-reflection layer on a silicon surface |
KR100825808B1 (ko) * | 2007-02-26 | 2008-04-29 | 삼성전자주식회사 | 후면 조명 구조의 이미지 센서 및 그 이미지 센서 제조방법 |
JP2008277511A (ja) * | 2007-04-27 | 2008-11-13 | Fujifilm Corp | 撮像素子及び撮像装置 |
TW200913238A (en) * | 2007-06-04 | 2009-03-16 | Sony Corp | Optical member, solid state imaging apparatus, and manufacturing method |
JP2009021379A (ja) * | 2007-07-11 | 2009-01-29 | Panasonic Corp | 固体撮像装置およびそれを備えたカメラ、固体撮像装置の製造方法 |
KR20090035262A (ko) * | 2007-10-05 | 2009-04-09 | 삼성전자주식회사 | 이미지 센서 및 그의 제조 방법 |
KR101425619B1 (ko) * | 2008-01-16 | 2014-08-04 | 삼성전자주식회사 | 기판 표면 처리 방법, 이를 이용한 이미지 센서의 제조방법 및 이에 따라 제조된 이미지 센서 |
JP5061915B2 (ja) * | 2008-01-18 | 2012-10-31 | ソニー株式会社 | 固体撮像素子及び撮像装置 |
US20090200631A1 (en) * | 2008-02-08 | 2009-08-13 | Omnivision Technologies, Inc. | Backside illuminated imaging sensor with light attenuating layer |
JP5288823B2 (ja) * | 2008-02-18 | 2013-09-11 | キヤノン株式会社 | 光電変換装置、及び光電変換装置の製造方法 |
EP2109143B1 (en) * | 2008-04-09 | 2013-05-29 | Sony Corporation | Solid-state imaging device, production method thereof, and electronic device |
JP2010003928A (ja) * | 2008-06-20 | 2010-01-07 | Toshiba Corp | 固体撮像装置及びその製造方法 |
US8207590B2 (en) * | 2008-07-03 | 2012-06-26 | Samsung Electronics Co., Ltd. | Image sensor, substrate for the same, image sensing device including the image sensor, and associated methods |
KR101023074B1 (ko) * | 2008-09-23 | 2011-03-24 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조 방법 |
US7875948B2 (en) * | 2008-10-21 | 2011-01-25 | Jaroslav Hynecek | Backside illuminated image sensor |
KR101545638B1 (ko) * | 2008-12-17 | 2015-08-19 | 삼성전자 주식회사 | 이미지 센서 및 그 제조 방법, 이미지 센서를 포함하는 장치 및 그 제조 방법 |
JP2010225818A (ja) * | 2009-03-23 | 2010-10-07 | Toshiba Corp | 固体撮像装置及びその製造方法 |
-
2008
- 2008-12-17 KR KR1020080128691A patent/KR101545638B1/ko active IP Right Grant
-
2009
- 2009-10-16 US US12/580,393 patent/US8154062B2/en active Active
- 2009-12-15 JP JP2009284476A patent/JP5745760B2/ja active Active
-
2012
- 2012-03-09 US US13/416,624 patent/US8471300B2/en active Active
-
2013
- 2013-06-14 US US13/918,604 patent/US8759137B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20130280850A1 (en) | 2013-10-24 |
US8154062B2 (en) | 2012-04-10 |
US20120175720A1 (en) | 2012-07-12 |
KR20100070094A (ko) | 2010-06-25 |
KR101545638B1 (ko) | 2015-08-19 |
US8759137B2 (en) | 2014-06-24 |
US20100148290A1 (en) | 2010-06-17 |
JP2010147474A (ja) | 2010-07-01 |
US8471300B2 (en) | 2013-06-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5745760B2 (ja) | イメージセンサ素子 | |
US11302733B2 (en) | Image sensors | |
KR101688084B1 (ko) | 이미지 센서 및 이를 포함하는 패키지 | |
KR100687102B1 (ko) | 이미지 센서 및 그 제조 방법. | |
KR101438268B1 (ko) | 후면 조명 이미지 센서 칩 내의 그리드 및 이러한 그리드를 형성하기 위한 방법 | |
US9761623B2 (en) | Backside illuminated (BSI) image sensor with a reflector | |
US11276716B2 (en) | Image sensor with improved near-infrared (NIR) radiation phase-detection autofocus (PDAF) performance | |
CN112750850A (zh) | 图像传感器、集成芯片、形成图像传感器的方法 | |
US9129876B2 (en) | Image sensor and process thereof | |
KR102529637B1 (ko) | 저 굴절률 그리드 구조체 및 그 형성 방법 | |
US9721983B2 (en) | Semiconductor device and manufacturing method thereof | |
KR20100093367A (ko) | 이미지 센서 및 그의 제조 방법 | |
TWI776415B (zh) | 影像感測器及其形成方法 | |
US20230057857A1 (en) | Image sensor including a light blocking film | |
US12027554B2 (en) | Composite deep trench isolation structure in an image sensor | |
CN110112162B (zh) | 图像传感器及其形成方法 | |
US20240072081A1 (en) | Image sensor | |
US20230030489A1 (en) | Image sensor | |
KR20220075117A (ko) | 이미지 센서 | |
JP2022019617A (ja) | 半導体装置およびその製造方法 | |
JP2023128745A (ja) | 光検出装置、その製造方法、及び電子機器 | |
KR20210053152A (ko) | 이미지 센서의 양자 효율을 증가시키도록 구성되는 렌즈 구조물 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20121206 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140225 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140228 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140526 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20141216 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150312 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20150319 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150407 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150507 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5745760 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |