JP6010667B2 - 機能素子およびその製造方法 - Google Patents
機能素子およびその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title description 20
- 239000000758 substrate Substances 0.000 claims description 103
- 239000004065 semiconductor Substances 0.000 claims description 66
- 229910052594 sapphire Inorganic materials 0.000 claims description 33
- 239000010980 sapphire Substances 0.000 claims description 33
- 238000002955 isolation Methods 0.000 claims description 10
- 239000010410 layer Substances 0.000 description 63
- 150000004767 nitrides Chemical class 0.000 description 48
- 239000013078 crystal Substances 0.000 description 42
- 238000000034 method Methods 0.000 description 21
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 16
- 229910010271 silicon carbide Inorganic materials 0.000 description 16
- 229910002601 GaN Inorganic materials 0.000 description 12
- 238000002407 reforming Methods 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 10
- 239000012535 impurity Substances 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 238000005336 cracking Methods 0.000 description 6
- 230000005669 field effect Effects 0.000 description 5
- -1 gallium nitride compound Chemical class 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052593 corundum Inorganic materials 0.000 description 4
- 239000010431 corundum Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229940125782 compound 2 Drugs 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H01L29/2003—Nitride compounds
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Led Devices (AREA)
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- Laser Beam Processing (AREA)
- Junction Field-Effect Transistors (AREA)
- Weting (AREA)
- Semiconductor Lasers (AREA)
Description
図2(a)に本実施例の窒化物半導体発光ダイオード素子の模式的な上面図を示し、図2(b)に正面図、図2(c)に側面図を示す。
本発明の実施例1に記載の機能素子の製造方法について図3を用いて説明する。まず、上面図である図3に示すサファイア基板10を以下のように準備する。サファイア基板10の表面はc面、つまり(0001)面であり、サファイア基板10の結晶方向を、OF(オリエンテーションフラット)を手前にして奥がa3軸である[−1−120]方向、左が[1−100]方向となるようにそろえてある。複数のウエハについて、OFがあるため奥方向は一定だが、左右の方向は定まらないため、一定の方向にそろえることが好ましい。このためには、例えば表面と裏面とが明確に分かるようにする(裏面を若干粗面化する)、第2のオリエンテーションフラットを形成する、などの方法がある。
Oxide)からなる透光性電極18を形成する。ここで透光性電極18はスパッタ法や真空蒸着法等を用いて形成することができる。
31 素子分離部
34、36 改質部
44a 44b 辺S1、S2を構成する分割面
46 正面図に示される分割面
S1 S2 a3軸である[−1−120]方向に平行な辺
T1 T2 [1−100]方向に平行な辺
Claims (3)
- 六方晶系のサファイア基板のc面上に半導体層を積層して形成された上面形状が四辺形の機能素子であって、
前記機能素子は、前記上面形状において少なくとも対向する2つの辺をなす境界を有し、
前記境界からXsμmだけ位置ずれした前記基板表面位置からYdμm(ただしYd=Xs・TAN(θ)、θ≠0)の位置に分割容易部が形成されており、
前記分割容易部を含み少なくとも一部が傾斜した分割面を備え、
前記機能素子の上面における前記対向する2つの辺に沿った素子分離部の幅が同程度で、
前記傾斜した分割面は少なくとも一面が、(1−100)面または(01−10)面または(−1010)面から、[0001]方向のc面側からみてr面に反って、各々、[−1100]方向または[0−110]方向または[10−10]方向に傾斜し、
前記四辺形は長方形であり、短辺が[11−20]方向、長辺が[1−100]方向であることを特徴とする機能素子。 - 前記基板の表面は、c軸に対して0.2度以上5度以下傾斜した面であることを特徴とする請求項1に記載の機能素子。
- 前記機能素子は素子分離部を有し、
前記分割容易部は前記素子分離部内又はその下方にある事を特徴とする請求項1に記載の機能素子。
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US (1) | US8866153B2 (ja) |
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KR (1) | KR101429837B1 (ja) |
CN (1) | CN102714152B (ja) |
WO (1) | WO2011090024A1 (ja) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5589942B2 (ja) * | 2011-04-15 | 2014-09-17 | 豊田合成株式会社 | 半導体発光チップの製造方法 |
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JP5747743B2 (ja) * | 2011-08-31 | 2015-07-15 | 日亜化学工業株式会社 | 発光素子の製造方法 |
JP5848600B2 (ja) * | 2011-12-22 | 2016-01-27 | シャープ株式会社 | 窒化物半導体発光素子および窒化物半導体発光素子の製造方法 |
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DE102013107971A1 (de) * | 2013-07-25 | 2015-01-29 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip, Halbleiterbauelement und Verfahren zur Herstellung von optoelektronischen Halbleiterchips |
US9466763B2 (en) | 2013-09-03 | 2016-10-11 | Sharp Kabushiki Kaisha | Semiconductor light-emitting element |
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US20210069926A1 (en) * | 2018-04-27 | 2021-03-11 | Rohm Co., Ltd. | Crystal cutting method, method of manufacturing sic semiconductor device, and sic semiconductor device |
JP7088768B2 (ja) * | 2018-07-24 | 2022-06-21 | 株式会社ディスコ | ウェーハの分割方法 |
JP6664445B2 (ja) * | 2018-08-10 | 2020-03-13 | ローム株式会社 | SiC半導体装置 |
DE112019004385T5 (de) | 2018-08-10 | 2021-05-20 | Rohm Co., Ltd. | SiC-HALBLEITERVORRICHTUNG |
JP7129397B2 (ja) | 2019-12-06 | 2022-09-01 | ローム株式会社 | SiC半導体装置 |
JP7129436B2 (ja) * | 2020-02-17 | 2022-09-01 | ローム株式会社 | SiC半導体装置 |
TWI804874B (zh) * | 2021-05-24 | 2023-06-11 | 世界先進積體電路股份有限公司 | 封裝結構 |
US11935878B2 (en) | 2021-09-10 | 2024-03-19 | Vanguard International Semiconductor Corporation | Package structure and method for manufacturing the same |
WO2023058509A1 (ja) * | 2021-10-08 | 2023-04-13 | 三星ダイヤモンド工業株式会社 | SiC半導体装置 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3580631B2 (ja) * | 1996-02-29 | 2004-10-27 | 京セラ株式会社 | 単結晶サファイア基板及び単結晶サファイアの分割方法及び単結晶サファイア体 |
US6653663B2 (en) * | 1999-12-06 | 2003-11-25 | Matsushita Electric Industrial Co., Ltd. | Nitride semiconductor device |
JP2001220295A (ja) * | 2000-02-10 | 2001-08-14 | Namiki Precision Jewel Co Ltd | サファイヤ基板 |
JP2004260083A (ja) | 2003-02-27 | 2004-09-16 | Nippon Sheet Glass Co Ltd | ウェハの切断方法および発光素子アレイチップ |
EP1695378A4 (en) | 2003-12-05 | 2010-08-25 | Showa Denko Kk | METHOD FOR PRODUCING A SEMICONDUCTOR CHIP AND SEMICONDUCTOR CHIP |
JP4594707B2 (ja) * | 2003-12-05 | 2010-12-08 | 昭和電工株式会社 | 半導体チップ製造方法 |
EP1583190B1 (en) * | 2004-04-02 | 2008-12-24 | Nichia Corporation | Nitride semiconductor laser device |
JP4419680B2 (ja) | 2004-05-18 | 2010-02-24 | 豊田合成株式会社 | 結晶の分割方法 |
US8093685B2 (en) | 2004-10-15 | 2012-01-10 | Panasonic Corporation | Nitride compound semiconductor element |
TWM266551U (en) * | 2004-11-23 | 2005-06-01 | Super Nova Optoelectronics Cor | GaN LED |
JP2006245043A (ja) * | 2005-02-28 | 2006-09-14 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体素子の製造方法及び発光素子 |
JP2006245046A (ja) | 2005-02-28 | 2006-09-14 | Toshiba Microelectronics Corp | 半導体装置の製造方法 |
US7838331B2 (en) | 2005-11-16 | 2010-11-23 | Denso Corporation | Method for dicing semiconductor substrate |
JP4816406B2 (ja) | 2005-11-16 | 2011-11-16 | 株式会社デンソー | ウェハの加工方法 |
JP5121461B2 (ja) * | 2005-12-26 | 2013-01-16 | パナソニック株式会社 | 窒化化合物半導体素子 |
CN101055933A (zh) | 2006-04-11 | 2007-10-17 | 中国科学技术大学 | 一种便于更换锌电极的锌空气电池装置 |
US7915714B2 (en) * | 2006-04-27 | 2011-03-29 | Panasonic Corporation | Semiconductor light emitting element and wafer |
JP5232375B2 (ja) | 2006-10-13 | 2013-07-10 | アイシン精機株式会社 | 半導体発光素子の分離方法 |
US20070298529A1 (en) | 2006-05-31 | 2007-12-27 | Toyoda Gosei, Co., Ltd. | Semiconductor light-emitting device and method for separating semiconductor light-emitting devices |
JP5082752B2 (ja) * | 2006-12-21 | 2012-11-28 | 日亜化学工業株式会社 | 半導体発光素子用基板の製造方法及びそれを用いた半導体発光素子 |
TW200903135A (en) | 2007-07-05 | 2009-01-16 | Coretronic Corp | Projector with externally mounted air filtering device |
KR101509834B1 (ko) * | 2007-08-03 | 2015-04-14 | 니치아 카가쿠 고교 가부시키가이샤 | 반도체 발광 소자 및 그 제조 방법 |
JP2009124077A (ja) * | 2007-11-19 | 2009-06-04 | Denso Corp | 半導体チップ及びその製造方法 |
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