JP5961409B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP5961409B2
JP5961409B2 JP2012048891A JP2012048891A JP5961409B2 JP 5961409 B2 JP5961409 B2 JP 5961409B2 JP 2012048891 A JP2012048891 A JP 2012048891A JP 2012048891 A JP2012048891 A JP 2012048891A JP 5961409 B2 JP5961409 B2 JP 5961409B2
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Japan
Prior art keywords
film
insulating film
conductive film
transistor
oxide semiconductor
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Expired - Fee Related
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JP2012048891A
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Japanese (ja)
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JP2012199536A (ja
JP2012199536A5 (enExample
Inventor
耕生 野田
耕生 野田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2012048891A priority Critical patent/JP5961409B2/ja
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Publication of JP2012199536A5 publication Critical patent/JP2012199536A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Dram (AREA)
  • Power Engineering (AREA)
JP2012048891A 2011-03-10 2012-03-06 半導体記憶装置 Expired - Fee Related JP5961409B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012048891A JP5961409B2 (ja) 2011-03-10 2012-03-06 半導体記憶装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011052270 2011-03-10
JP2011052270 2011-03-10
JP2012048891A JP5961409B2 (ja) 2011-03-10 2012-03-06 半導体記憶装置

Related Child Applications (1)

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JP2016126477A Division JP6197075B2 (ja) 2011-03-10 2016-06-27 半導体装置

Publications (3)

Publication Number Publication Date
JP2012199536A JP2012199536A (ja) 2012-10-18
JP2012199536A5 JP2012199536A5 (enExample) 2015-03-26
JP5961409B2 true JP5961409B2 (ja) 2016-08-02

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JP2012048891A Expired - Fee Related JP5961409B2 (ja) 2011-03-10 2012-03-06 半導体記憶装置
JP2016126477A Expired - Fee Related JP6197075B2 (ja) 2011-03-10 2016-06-27 半導体装置

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Country Link
US (1) US8772849B2 (enExample)
JP (2) JP5961409B2 (enExample)
KR (2) KR101954592B1 (enExample)
TW (1) TWI550829B (enExample)

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DE102020127831A1 (de) 2020-05-29 2021-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. Speicherarray-gatestrukturen
US11640974B2 (en) 2020-06-30 2023-05-02 Taiwan Semiconductor Manufacturing Co., Ltd. Memory array isolation structures
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US20120228687A1 (en) 2012-09-13
US8772849B2 (en) 2014-07-08
KR20190022591A (ko) 2019-03-06
JP2012199536A (ja) 2012-10-18
KR20120103466A (ko) 2012-09-19
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JP2016213479A (ja) 2016-12-15
KR101988211B1 (ko) 2019-06-13

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