JP5954991B2 - オプトエレクロニクス半導体構成部材 - Google Patents

オプトエレクロニクス半導体構成部材 Download PDF

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Publication number
JP5954991B2
JP5954991B2 JP2011546655A JP2011546655A JP5954991B2 JP 5954991 B2 JP5954991 B2 JP 5954991B2 JP 2011546655 A JP2011546655 A JP 2011546655A JP 2011546655 A JP2011546655 A JP 2011546655A JP 5954991 B2 JP5954991 B2 JP 5954991B2
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scattering
semiconductor chip
scattering element
optoelectronic semiconductor
component according
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JP2011546655A
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Japanese (ja)
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JP2012516044A5 (enExample
JP2012516044A (ja
Inventor
エングル モーリッツ
エングル モーリッツ
エーリヒ ゾルク イェルク
エーリヒ ゾルク イェルク
ツァイラー トーマス
ツァイラー トーマス
ヨアヒム ライル
ライル ヨアヒム
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/882Scattering means

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP2011546655A 2009-01-23 2009-12-23 オプトエレクロニクス半導体構成部材 Active JP5954991B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009005907.5 2009-01-23
DE102009005907A DE102009005907A1 (de) 2009-01-23 2009-01-23 Optoelektronisches Halbleiterbauteil
PCT/EP2009/067888 WO2010083929A1 (de) 2009-01-23 2009-12-23 Optoelektronisches halbleiterbauteil

Publications (3)

Publication Number Publication Date
JP2012516044A JP2012516044A (ja) 2012-07-12
JP2012516044A5 JP2012516044A5 (enExample) 2012-12-27
JP5954991B2 true JP5954991B2 (ja) 2016-07-20

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JP2011546655A Active JP5954991B2 (ja) 2009-01-23 2009-12-23 オプトエレクロニクス半導体構成部材

Country Status (8)

Country Link
US (1) US8916886B2 (enExample)
EP (1) EP2382673B1 (enExample)
JP (1) JP5954991B2 (enExample)
KR (1) KR101647866B1 (enExample)
CN (1) CN102292836B (enExample)
DE (1) DE102009005907A1 (enExample)
TW (1) TWI420647B (enExample)
WO (1) WO2010083929A1 (enExample)

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DE102011013369A1 (de) * 2010-12-30 2012-07-05 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen einer Mehrzahl von Halbleiterbauelementen
DE102011050450A1 (de) 2011-05-18 2012-11-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip, optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
DE102011087614A1 (de) * 2011-12-02 2013-06-06 Osram Opto Semiconductors Gmbh Optoelektronische Anordnung
DE102012200973A1 (de) 2012-01-24 2013-07-25 Osram Opto Semiconductors Gmbh Leuchte und verfahren zur herstellung einer leuchte
DE102012101892B4 (de) * 2012-03-06 2021-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Wellenlängenkonversionselement, Licht emittierendes Halbleiterbauelement und Anzeigevorrichtung damit sowie Verfahren zur Herstellung eines Wellenlängenkonversionselements
DE102012206970A1 (de) * 2012-04-26 2013-10-31 Osram Gmbh Optische vorrichtung und beleuchtungseinrichtung
JP5960565B2 (ja) * 2012-09-28 2016-08-02 スタンレー電気株式会社 自動車ヘッドランプ用発光装置及びその製造方法
JP6093611B2 (ja) * 2013-03-18 2017-03-08 スタンレー電気株式会社 発光装置及びその製造方法
DE102013207460A1 (de) * 2013-04-24 2014-10-30 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102013214877A1 (de) 2013-07-30 2015-02-19 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines Abdeckelements und eines optoelektronischen Bauelements, Abdeckelement und optoelektronisches Bauelement
DE102013214896B4 (de) * 2013-07-30 2021-09-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines Konverterelements und eines optoelektronischen Bauelements, Konverterelement und optoelektronisches Bauelement
EP3036777B1 (en) 2013-08-20 2020-03-11 Lumileds Holding B.V. Shaped phosphor to reduce repeated reflections
JP6079544B2 (ja) * 2013-10-07 2017-02-15 豊田合成株式会社 発光装置および発光装置の製造方法
US9499740B2 (en) 2013-11-22 2016-11-22 Nitto Denko Corporation Light extraction element
DE102014102828A1 (de) * 2014-03-04 2015-09-10 Osram Opto Semiconductors Gmbh Anordnung mit einer lichtemittierenden Diode
JP6757716B2 (ja) * 2014-09-02 2020-09-23 ルミレッズ ホールディング ベーフェー 光源、その製造方法、及びライト
DE102014112883A1 (de) * 2014-09-08 2016-03-10 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
DE102014112973A1 (de) * 2014-09-09 2016-03-10 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
JP6552190B2 (ja) * 2014-12-11 2019-07-31 シチズン電子株式会社 発光装置及び発光装置の製造方法
DE102015105474A1 (de) * 2015-04-10 2016-10-13 Osram Opto Semiconductors Gmbh Konverterbauteil für eine optoelektronische Leuchtvorrichtung
DE102015106865A1 (de) * 2015-05-04 2016-11-10 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines Konverterbauteils
JP6217705B2 (ja) 2015-07-28 2017-10-25 日亜化学工業株式会社 発光装置及びその製造方法
JP2017224867A (ja) * 2017-09-28 2017-12-21 日亜化学工業株式会社 発光装置及びその製造方法
JP7083647B2 (ja) 2018-01-16 2022-06-13 スタンレー電気株式会社 発光装置
US11489005B2 (en) 2019-12-13 2022-11-01 Lumileds Llc Segmented LED arrays with diffusing elements
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JP7531090B2 (ja) * 2022-04-28 2024-08-09 日亜化学工業株式会社 発光装置及び発光モジュール

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Also Published As

Publication number Publication date
US20120161162A1 (en) 2012-06-28
EP2382673A1 (de) 2011-11-02
US8916886B2 (en) 2014-12-23
JP2012516044A (ja) 2012-07-12
CN102292836B (zh) 2016-05-25
KR20110107384A (ko) 2011-09-30
EP2382673B1 (de) 2019-01-30
WO2010083929A1 (de) 2010-07-29
CN102292836A (zh) 2011-12-21
DE102009005907A1 (de) 2010-07-29
TW201044549A (en) 2010-12-16
KR101647866B1 (ko) 2016-08-11
TWI420647B (zh) 2013-12-21

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