CN102292836B - 光电半导体组件 - Google Patents

光电半导体组件 Download PDF

Info

Publication number
CN102292836B
CN102292836B CN200980155142.2A CN200980155142A CN102292836B CN 102292836 B CN102292836 B CN 102292836B CN 200980155142 A CN200980155142 A CN 200980155142A CN 102292836 B CN102292836 B CN 102292836B
Authority
CN
China
Prior art keywords
scattering
radiation
semiconductor chip
exactly
conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN200980155142.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN102292836A (zh
Inventor
M.恩格尔
J.E.索尔格
T.蔡勒
J.赖尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of CN102292836A publication Critical patent/CN102292836A/zh
Application granted granted Critical
Publication of CN102292836B publication Critical patent/CN102292836B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
CN200980155142.2A 2009-01-23 2009-12-23 光电半导体组件 Active CN102292836B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009005907A DE102009005907A1 (de) 2009-01-23 2009-01-23 Optoelektronisches Halbleiterbauteil
DE102009005907.5 2009-01-23
PCT/EP2009/067888 WO2010083929A1 (de) 2009-01-23 2009-12-23 Optoelektronisches halbleiterbauteil

Publications (2)

Publication Number Publication Date
CN102292836A CN102292836A (zh) 2011-12-21
CN102292836B true CN102292836B (zh) 2016-05-25

Family

ID=41862160

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980155142.2A Active CN102292836B (zh) 2009-01-23 2009-12-23 光电半导体组件

Country Status (8)

Country Link
US (1) US8916886B2 (enExample)
EP (1) EP2382673B1 (enExample)
JP (1) JP5954991B2 (enExample)
KR (1) KR101647866B1 (enExample)
CN (1) CN102292836B (enExample)
DE (1) DE102009005907A1 (enExample)
TW (1) TWI420647B (enExample)
WO (1) WO2010083929A1 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010034915A1 (de) * 2010-08-20 2012-02-23 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Streukörper
DE102011013369A1 (de) * 2010-12-30 2012-07-05 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen einer Mehrzahl von Halbleiterbauelementen
DE102011050450A1 (de) * 2011-05-18 2012-11-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip, optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
DE102011087614A1 (de) * 2011-12-02 2013-06-06 Osram Opto Semiconductors Gmbh Optoelektronische Anordnung
DE102012200973A1 (de) * 2012-01-24 2013-07-25 Osram Opto Semiconductors Gmbh Leuchte und verfahren zur herstellung einer leuchte
DE102012101892B4 (de) 2012-03-06 2021-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Wellenlängenkonversionselement, Licht emittierendes Halbleiterbauelement und Anzeigevorrichtung damit sowie Verfahren zur Herstellung eines Wellenlängenkonversionselements
DE102012206970A1 (de) * 2012-04-26 2013-10-31 Osram Gmbh Optische vorrichtung und beleuchtungseinrichtung
JP5960565B2 (ja) * 2012-09-28 2016-08-02 スタンレー電気株式会社 自動車ヘッドランプ用発光装置及びその製造方法
JP6093611B2 (ja) * 2013-03-18 2017-03-08 スタンレー電気株式会社 発光装置及びその製造方法
DE102013207460A1 (de) * 2013-04-24 2014-10-30 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102013214877A1 (de) 2013-07-30 2015-02-19 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines Abdeckelements und eines optoelektronischen Bauelements, Abdeckelement und optoelektronisches Bauelement
DE102013214896B4 (de) * 2013-07-30 2021-09-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines Konverterelements und eines optoelektronischen Bauelements, Konverterelement und optoelektronisches Bauelement
CN105453282B (zh) * 2013-08-20 2020-12-15 亮锐控股有限公司 减少重复反射的成形磷光体
JP6079544B2 (ja) * 2013-10-07 2017-02-15 豊田合成株式会社 発光装置および発光装置の製造方法
WO2015077357A1 (en) * 2013-11-22 2015-05-28 Nitto Denko Corporation Light extraction element
DE102014102828A1 (de) * 2014-03-04 2015-09-10 Osram Opto Semiconductors Gmbh Anordnung mit einer lichtemittierenden Diode
EP3189550B8 (en) * 2014-09-02 2018-08-29 Lumileds Holding B.V. Light source
DE102014112883A1 (de) 2014-09-08 2016-03-10 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
DE102014112973A1 (de) * 2014-09-09 2016-03-10 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
JP6552190B2 (ja) * 2014-12-11 2019-07-31 シチズン電子株式会社 発光装置及び発光装置の製造方法
DE102015105474A1 (de) * 2015-04-10 2016-10-13 Osram Opto Semiconductors Gmbh Konverterbauteil für eine optoelektronische Leuchtvorrichtung
DE102015106865A1 (de) * 2015-05-04 2016-11-10 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines Konverterbauteils
JP6217705B2 (ja) 2015-07-28 2017-10-25 日亜化学工業株式会社 発光装置及びその製造方法
JP2017224867A (ja) * 2017-09-28 2017-12-21 日亜化学工業株式会社 発光装置及びその製造方法
JP7083647B2 (ja) * 2018-01-16 2022-06-13 スタンレー電気株式会社 発光装置
US11680696B2 (en) 2019-12-13 2023-06-20 Lumileds Llc Segmented LED arrays with diffusing elements
US11489005B2 (en) 2019-12-13 2022-11-01 Lumileds Llc Segmented LED arrays with diffusing elements
JP7531090B2 (ja) * 2022-04-28 2024-08-09 日亜化学工業株式会社 発光装置及び発光モジュール

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3875456A (en) * 1972-04-04 1975-04-01 Hitachi Ltd Multi-color semiconductor lamp
GB2373368A (en) * 2001-03-12 2002-09-18 Arima Optoelectronics Corp White light emitting LED devices
WO2003098707A1 (en) * 2002-05-22 2003-11-27 Applied Optotech Limited Led array
WO2008091319A2 (en) * 2007-01-22 2008-07-31 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
CN201137827Y (zh) * 2006-12-29 2008-10-22 东莞市科锐德数码光电科技有限公司 高光量led日光灯

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3114805B2 (ja) 1998-04-15 2000-12-04 日亜化学工業株式会社 面状光源及びそれを用いたディスプレイのバックライト、照光式操作スイッチ
JP4109756B2 (ja) * 1998-07-07 2008-07-02 スタンレー電気株式会社 発光ダイオード
DE19845229C1 (de) 1998-10-01 2000-03-09 Wustlich Daniel Mit Weißlicht arbeitende Hintergrundbeleuchtung
US6271631B1 (en) 1998-10-15 2001-08-07 E.L. Specialists, Inc. Alerting system using elastomeric EL lamp structure
JP2003110146A (ja) * 2001-07-26 2003-04-11 Matsushita Electric Works Ltd 発光装置
JP2003191521A (ja) * 2001-12-26 2003-07-09 Kyocera Corp 光プリンタヘッドの組立方法
JP4401681B2 (ja) 2003-05-19 2010-01-20 日東樹脂工業株式会社 光拡散体及びそれを用いた光学部材乃至光学デバイス
US7250715B2 (en) * 2004-02-23 2007-07-31 Philips Lumileds Lighting Company, Llc Wavelength converted semiconductor light emitting devices
JP4360945B2 (ja) 2004-03-10 2009-11-11 シチズン電子株式会社 照明装置
JP3983793B2 (ja) * 2004-04-19 2007-09-26 松下電器産業株式会社 Ｌｅｄ照明光源の製造方法およびｌｅｄ照明光源
JP4667803B2 (ja) 2004-09-14 2011-04-13 日亜化学工業株式会社 発光装置
JP2006140362A (ja) 2004-11-15 2006-06-01 Nitto Denko Corp 光半導体素子封止用シートおよび該シートを用いた光半導体装置の製造方法
US7344902B2 (en) * 2004-11-15 2008-03-18 Philips Lumileds Lighting Company, Llc Overmolded lens over LED die
JP2006162846A (ja) * 2004-12-06 2006-06-22 Asahi Glass Co Ltd 直下型バックライト用拡散板
US20060138938A1 (en) * 2004-12-27 2006-06-29 Tan Kheng L White LED utilizing organic dyes
US7564180B2 (en) 2005-01-10 2009-07-21 Cree, Inc. Light emission device and method utilizing multiple emitters and multiple phosphors
KR101370362B1 (ko) * 2005-03-14 2014-03-05 코닌클리케 필립스 엔.브이. 다결정 세라믹 구조 내의 인광체 및 이를 포함하는 발광 요소
KR100593933B1 (ko) * 2005-03-18 2006-06-30 삼성전기주식회사 산란 영역을 갖는 측면 방출형 발광다이오드 패키지 및이를 포함하는 백라이트 장치
US7358543B2 (en) 2005-05-27 2008-04-15 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Light emitting device having a layer of photonic crystals and a region of diffusing material and method for fabricating the device
JP2007067204A (ja) * 2005-08-31 2007-03-15 Toshiba Lighting & Technology Corp 発光ダイオード装置
TWM289865U (en) * 2005-11-08 2006-04-21 Lighthouse Technology Co Ltd Sectional light emitting diode backlight unit
JP4969119B2 (ja) 2006-03-20 2012-07-04 日本碍子株式会社 発光ダイオード装置
DE102006024165A1 (de) 2006-05-23 2007-11-29 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Optoelektronischer Halbleiterchip mit einem Wellenlängenkonversionsstoff sowie optoelektronisches Halbleiterbauelement mit einem solchen Halbleiterchip und Verfahren zur Herstellung des optoelektronischen Halbleiterchips
EP2030258A2 (en) 2006-06-08 2009-03-04 Koninklijke Philips Electronics N.V. Light-emitting device
DE102007021009A1 (de) * 2006-09-27 2008-04-10 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung und Verfahren zur Herstellung einer solchen
DE102006051746A1 (de) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer Lumineszenzkonversionsschicht
TWI338380B (en) * 2006-10-11 2011-03-01 Chuan Yu Hung Light emitting diode incorporating high refractive index material
JP5392978B2 (ja) * 2006-10-30 2014-01-22 住友ベークライト株式会社 樹脂組成物および該樹脂組成物を用いて作製した半導体パッケージ
US20080121911A1 (en) * 2006-11-28 2008-05-29 Cree, Inc. Optical preforms for solid state light emitting dice, and methods and systems for fabricating and assembling same
US7902560B2 (en) 2006-12-15 2011-03-08 Koninklijke Philips Electronics N.V. Tunable white point light source using a wavelength converting element
US20080179618A1 (en) * 2007-01-26 2008-07-31 Ching-Tai Cheng Ceramic led package
JP5158472B2 (ja) 2007-05-24 2013-03-06 スタンレー電気株式会社 半導体発光装置
US8177382B2 (en) * 2008-03-11 2012-05-15 Cree, Inc. Apparatus and methods for multiplanar optical diffusers and display panels for using the same
DE102008054029A1 (de) * 2008-10-30 2010-05-06 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3875456A (en) * 1972-04-04 1975-04-01 Hitachi Ltd Multi-color semiconductor lamp
GB2373368A (en) * 2001-03-12 2002-09-18 Arima Optoelectronics Corp White light emitting LED devices
WO2003098707A1 (en) * 2002-05-22 2003-11-27 Applied Optotech Limited Led array
CN201137827Y (zh) * 2006-12-29 2008-10-22 东莞市科锐德数码光电科技有限公司 高光量led日光灯
WO2008091319A2 (en) * 2007-01-22 2008-07-31 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method

Also Published As

Publication number Publication date
DE102009005907A1 (de) 2010-07-29
KR101647866B1 (ko) 2016-08-11
EP2382673B1 (de) 2019-01-30
TW201044549A (en) 2010-12-16
CN102292836A (zh) 2011-12-21
JP5954991B2 (ja) 2016-07-20
TWI420647B (zh) 2013-12-21
KR20110107384A (ko) 2011-09-30
JP2012516044A (ja) 2012-07-12
EP2382673A1 (de) 2011-11-02
WO2010083929A1 (de) 2010-07-29
US20120161162A1 (en) 2012-06-28
US8916886B2 (en) 2014-12-23

Similar Documents

Publication Publication Date Title
CN102292836B (zh) 光电半导体组件
CN102272955B (zh) 光电子半导体器件
JP7125636B2 (ja) 発光装置
JP5158472B2 (ja) 半導体発光装置
JP6920995B2 (ja) 向上した色均一性を有する光源アッセンブリ
JP4123057B2 (ja) 発光装置及びその製造方法
WO2011096171A1 (ja) 発光装置およびこれを用いた面光源装置
JP5698808B2 (ja) 半導体発光装置
CN111211210B (zh) 发光装置
CN112310056A (zh) 发光装置和面发光光源
KR20130093640A (ko) 발광 변환 물질 층을 형성하는 방법, 발광 변환 물질 층을 위한 조성물 및 발광 변환 물질 층을 포함하는 소자
JP2014086549A (ja) 半導体発光装置およびその製造方法
JP2011114093A (ja) 照明装置
JP5450680B2 (ja) 半導体発光装置
CN106688096A (zh) 光电子构件
EP3543776B1 (en) Chip-scale linear light-emitting device
JP2007207572A (ja) 光源装置、バックライト装置及び表示装置
US20160149101A1 (en) Optoelectronic semiconductor component
JP6173794B2 (ja) 半導体発光装置およびそれを用いた照明装置
TW201940943A (zh) 晶片級線型光源發光裝置
JP2008258284A (ja) Ｌｅｄ発光表示装置
JP2019129176A (ja) 発光装置の製造方法、及び、発光装置
KR20110090493A (ko) 도광판 및 이를 구비한 발광장치

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant