WO2011096171A1 - 発光装置およびこれを用いた面光源装置 - Google Patents
発光装置およびこれを用いた面光源装置 Download PDFInfo
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- WO2011096171A1 WO2011096171A1 PCT/JP2011/000388 JP2011000388W WO2011096171A1 WO 2011096171 A1 WO2011096171 A1 WO 2011096171A1 JP 2011000388 W JP2011000388 W JP 2011000388W WO 2011096171 A1 WO2011096171 A1 WO 2011096171A1
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- Prior art keywords
- light
- light emitting
- emitting element
- emitting device
- semiconductor
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- 239000000463 material Substances 0.000 claims abstract description 54
- 238000006243 chemical reaction Methods 0.000 claims abstract description 19
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 238000000149 argon plasma sintering Methods 0.000 claims description 14
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 abstract description 50
- 239000011347 resin Substances 0.000 abstract description 50
- 239000000758 substrate Substances 0.000 abstract description 14
- 238000009792 diffusion process Methods 0.000 abstract description 9
- 230000003287 optical effect Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 description 11
- 239000000919 ceramic Substances 0.000 description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 7
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 7
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000007639 printing Methods 0.000 description 4
- 239000010419 fine particle Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
Definitions
- the present invention relates to a light emitting device and a surface light source device using the same, and more particularly to a light emitting device and a surface light source device including a semiconductor light emitting element and a wavelength conversion layer.
- Patent Document 1 discloses a light-emitting device that realizes so-called color unevenness reduction that realizes uniform white light.
- Patent Document 1 when the emitted light from the light emitting element 1 is converted by the fluorescent material-containing resin 2 as shown in FIG. 10, the thickness of the fluorescent material-containing resin 2 with respect to the emitted light in each direction is made uniform.
- the amount of the first light emitted from the light emitting element 1 and the amount of the second light subjected to wavelength conversion are made equal in each direction as viewed from the outside of the light emitting device.
- white which is a mixed color of blue which is the first light and yellow which is the second light is made uniform.
- Patent Document 2 Another configuration for realizing uniform color is described in Patent Document 2.
- Patent Document 2 As shown in FIG. 11, a phosphor resin portion 12 that covers at least the upper surface of the light emitting element 11, and a translucent resin portion (light diffusion layer) 13 are formed on the phosphor resin portion 12, and emitted from the light emitting element 11.
- the first light and the wavelength-converted second light pass through the translucent resin portion (light diffusion layer) 13 and are scattered, so that color mixing proceeds and color unevenness can be reduced. .
- the light emitting element generally emits light on a plane parallel to the substrate.
- the color of the light at the center is stronger than the color of the light whose wavelength is converted. Therefore, in the case of a combination of a blue light emitting element and a phosphor that converts the wavelength of blue to yellow, the portion corresponding to the center of the light emitting element is white with strong blue.
- the light emission intensity at the center is high, not only the color unevenness but also the luminance variation becomes remarkable.
- the present invention provides a light-emitting device that can suppress luminance variation and obtain uniform white light with small color unevenness and a surface light source device using the same in a light-emitting device using a high-luminance light-emitting element. For the purpose.
- the light emitting device of the present invention absorbs the first light emitted from the mounting substrate, at least one semiconductor light emitting element, and the semiconductor light emitting element, and has a longer wavelength than the first light.
- the reflective material may be made of an insulator or a metal.
- the wavelength conversion layer may contain a phosphor.
- the mounting board may be made of a metal or an insulating material that reflects the first light and the second light.
- a reflection part having a function of reflecting the first light and the second light may be provided around the semiconductor light emitting element.
- a layer that transmits the first light and the second light is formed around the semiconductor light emitting element so as to be in contact with a part of the semiconductor light emitting element other than the light emitting surface. Also good.
- a lens for condensing or diffusing the first light and the second light may be provided.
- the semiconductor light emitting element may be made of a nitride semiconductor.
- the surface light source device of the present invention is characterized in that the light emitting devices are arranged in a vertical row and a horizontal row at a predetermined interval.
- the present invention scatters the light from the light emitting element and the light from the wavelength conversion layer by the light reflecting material installed at a high density directly on the light emitting surface of the light emitting element, and thereby the light amount concentrated on the light emitting element and the light emission. Since the color from the element can be diffused, uniform light with small color unevenness with reduced luminance variation can be obtained.
- FIG. 6 is a cross-sectional view taken along the line AA ′ of FIG.
- Embodiment 1 The configuration of the light-emitting device according to Embodiment 1 will be described with reference to FIG.
- the light emitting device 100 has a configuration in which a light emitting element 101 is mounted on a ceramic substrate 105.
- the ceramic substrate 105 has an electrode portion 102 corresponding to the electrode of the light emitting element 101 on the upper surface and a terminal portion 104 electrically connected to the electrode portion 102 via the through wiring 103 on the lower surface.
- the light emitting element 101 has positive and negative electrodes formed on one surface, and is mounted on the ceramic substrate 105 by flip chip connection.
- the light emitting element 101 is made of a nitride semiconductor formed on a sapphire substrate, a SiC substrate, or a GaN substrate, and has a characteristic of emitting blue light.
- the ceramic substrate may contain a material that reflects light, such as titanium oxide.
- phosphor is contained in the ceramic substrate 105 on which the light emitting element 101 is mounted so as to cover the light emitting element 101 by a screen printing method. Resin is printed to form the wavelength conversion layer 106.
- the phosphor may be a YAG phosphor or silicate phosphor that absorbs blue light and has a longer wavelength than blue, for example, emits yellow light, and emits green or red light-emitting oxide or nitride. Or oxynitride phosphors may be used. Further, for example, two or more kinds of phosphors that emit different light, such as a red phosphor and a green phosphor, may be used. An epoxy resin or a silicone resin may be used as the resin.
- a wider third mask (not shown) is installed to print and form the translucent resin layer 108 that does not include the light reflecting material.
- the translucent resin an epoxy resin or a silicone resin used for the phosphor-containing resin may be used.
- the area of each resin is determined by the alignment accuracy of the mask. Therefore, the light emitting device 100 in which the area 109 having a high density of the light reflecting material is installed immediately above the center of the light emitting surface of the light emitting element 101. Obtainable. Even if the light scattering layer 107 is deformed at the stage of resin curing after printing, optimization of the second mask dimensions and effect conditions causes the light reflecting material to be directly above the light emitting surface center of the light emitting element 101. A region 109 having a high density can be secured.
- the light scattering layer 107 is formed by using two kinds of translucent resins having different concentrations of the light reflecting material. Specifically, first, a light-transmitting resin with a high concentration of the light reflecting material is used to print a region 109 having a high density of the light reflecting material directly above the center of the light emitting surface of the light emitting element 101, and then the light reflecting material A region 110 having a low density of the light reflecting material is printed around a region 109 having a high density of the light reflecting material using a light transmitting resin having a low concentration. There are at least two types of second masks, one for printing directly above the center of the light emitting surface of the light emitting element 101, and the other for printing around the high density region 109 of the light reflecting material. In addition, in the region 110 where the density of the light reflecting material is low, the parallel direction (the direction rotated by 90 ° from the directly above direction) is printed thicker than the directly above direction.
- the region 109 having a high density of the light reflecting material exists immediately above the central portion of the light emitting surface of the light emitting element 101, and light having a high intensity emitted from the central portion of the light emitting surface is reflected on the light reflecting material.
- the high density region 109 is scattered.
- a region 110 having a low density of light reflecting material exists around the region 109 having a high density of light reflecting material even above the light emitting element 101.
- the light emitted from the portion deviating from the central portion of the light emitting surface has a relatively low intensity, and this relatively low intensity light passes through the region 110 where the density of the light reflecting material is low. Brightness variation is suppressed.
- light from the light emitting element and light from the phosphor can be scattered and mixed by the light reflecting material, uniform white light can be obtained when viewed from the outside of the light emitting device 100.
- the region 109 having a high density of the light reflecting material is present immediately above the central portion of the light emitting surface of the light emitting element 101. This is because when the light emitting element 101 is viewed from above, at least the central portion of the light emitting surface ( This is a state in which a part of the light emitting surface located at the center is covered with a region 109 having a high density of light reflecting material.
- titanium oxide is used as the light reflecting material.
- a material that reflects or scatters light such as metal particles or other insulators.
- a screen printing method is used as a method for forming a wavelength conversion layer formed of a phosphor-containing resin or a translucent resin layer including a light diffusing material. For example, ink jetting, potting, spraying through a mask, etc. It is also possible to form it in a prescribed region by this method.
- the phosphor-containing resin has been described as the wavelength conversion layer, a sheet-like phosphor layer such as a ceramic substrate containing the phosphor is disposed on the light emitting surface of the light emitting element, or the phosphor itself is made to emit light from the light emitting element.
- a sheet-like phosphor layer such as a ceramic substrate containing the phosphor is disposed on the light emitting surface of the light emitting element, or the phosphor itself is made to emit light from the light emitting element. The same effect can be obtained by applying the present invention even in a configuration in which the surface is adhered.
- the combination of the blue-emitting nitride semiconductor light-emitting element and the phosphor has been described.
- white light is obtained by combining the ultraviolet-light-emitting semiconductor light-emitting element and the phosphor.
- the effect of suppressing luminance variation and obtaining a uniform color is the same.
- a light-emitting device 200 on which the light-emitting element 201 is mounted includes a first metal frame 203 that is electrically connected to one electrode of the light-emitting element 201, and a second metal that is electrically connected to the other electrode of the light-emitting element 201.
- the resin portion 206 may contain a material that reflects light, such as titanium oxide.
- the light emitting element 201 is installed on the first metal frame 203, and the electrodes of the light emitting element are electrically connected to the first metal frame 203 and the second metal frame 204 by wires 207, respectively.
- a translucent resin layer 208 is applied by potting between the side surface of the light emitting element 201 and the reflecting surface 205, and a phosphor-containing material is formed thereon.
- the wavelength conversion layer 209 is formed of resin.
- a light-transmitting layer is formed by applying a light-transmitting resin containing fine particles of titanium oxide as a light reflecting material on the wavelength conversion layer 209 immediately above the central portion of the light emitting surface (upper surface) of the light emitting element 201 by an ink jet method.
- a translucent resin layer 211 that does not contain a light reflecting material.
- a region 212 having a high density of the light reflecting material can be formed immediately above the light emitting element 201, and a region 213 having a low density of the light reflecting material can be provided in the peripheral portion directly above the central portion of the light emitting surface of the light emitting element 201.
- the translucent resin layer 211 has been described as having a shape that only covers the wavelength conversion layer 209.
- the translucent resin layer 211 may have a lens shape having a function of condensing and dispersing light.
- a wide light distribution can be obtained by forming the translucent resin layer 211 into a lens shape like the light-emitting device 230 of FIG. Characteristics can be realized.
- the light scattering layer 210 may be formed.
- a light emitting device 300 provided with a plurality of light emitting elements will be described with reference to FIGS.
- the interval between the light emitting elements is also narrowed. Accordingly, since the space between the upper surface and the side surface of the light emitting element 301 is small, the intensity distribution of the light emitting element 301 is the main factor for color unevenness rather than the difference in the thickness of the phosphor-containing resin.
- a plurality of light emitting elements 301 are mounted in a flip chip configuration on a ceramic substrate 305 having an electrode portion 302, a through wiring 303 on the upper surface, and a terminal portion 304 on the lower surface.
- the phosphor-containing resin is printed and cured as the wavelength conversion layer 306 by the screen printing method on the ceramic substrate 305 on which the light emitting element 301 is mounted, the light-transmitting resin containing the light reflecting material is applied and cured by the ink jet method. By doing so, the light scattering layer 307 is formed. Further, a translucent resin layer 308 that does not contain a light reflecting material is applied.
- the region 309 having a high density of the light reflecting material and the light emitting element 301 are directly above the central portion of the light emitting surface.
- a region 310 having a low density of the light reflecting material in the peripheral portion directly above the central portion of the light emitting surface, a light emitting device that achieves uniform white light with high luminance with reduced luminance variation can be obtained.
- the light-emitting device 400 is electrically connected to the first metal frame 402 and the second metal frame 403 on which the plurality of light-emitting elements 401 and 401 are mounted and electrically connected to another electrode of the light-emitting element 401.
- a resin portion 406 having a third metal frame 404 and fixing the respective metal frames and surrounding the plurality of light emitting elements 401 and having a reflection surface 405 for reflecting light is formed.
- the resin portion 406 may contain a material that reflects light, such as titanium oxide.
- the plurality of light emitting elements 401 and the metal frames 402, 403, and 404 are electrically connected by wires 407.
- the electrical connection of the light emitting elements 401 may be in series or in parallel, and is selected depending on the application to which the light emitting device 400 is applied.
- a wavelength conversion layer 408 made of a phosphor-containing resin is formed so as to cover the plurality of light emitting elements 401.
- the light scattering layer 409 is formed by applying a translucent resin containing fine particles of titanium oxide as a light reflecting material by an inkjet method.
- a region 410 having a high density of the light reflecting material is directly above the central portion of the light emitting surface of each of the plurality of light emitting elements 401, 401, and the density of the light reflecting material is at a peripheral portion immediately above the central portion of the light emitting surface of each of the light emitting elements.
- the low region 411 is formed. Then, it covers with the translucent resin layer 412 which does not contain a light reflection material.
- the translucent resin layer 412 has been described so as to cover the wavelength conversion layer 408. However, as illustrated in FIG. 8, the translucent resin layer 412 collects and disperses light.
- the light emitting device 480 having a lens shape having a function may be used.
- the interval between the plurality of light-emitting elements is narrow and the light-emitting device is small, and thus can be regarded as a point light source as the light-emitting device.
- the backlight device 500 a liquid crystal panel 501, a light control member 502 attached to the back of the liquid crystal panel, and a light emitting device 504 mounted on the printed circuit board 503 are disposed with a predetermined distance from the light control member.
- the surface light source device 505 is incorporated.
- the light control member 502 includes a diffusion plate 506, a diffusion sheet 507, a first light control sheet 508, and a second light control sheet 509.
- the diffusion plate 506 diffuses light from the surface light source device 505. In addition, it is a resin plate whose surface is roughened.
- the backlight device 500 is required to be thin. By mounting the light emitting device of the present invention of Embodiment 1 or 2 that can realize uniform white color with little luminance variation on the surface light source device 505 of FIG. 9, the distance between the light control member 502 and the surface light source device 505 is reduced. At the same time, the number of installations per panel can be reduced.
- Embodiment 3 or 4 by mounting the light-emitting device described in Embodiment 3 or 4 on a printed circuit board 503 as a point light source and installing a lens (not shown) for wide light distribution on the printed circuit board 503, a wider range can be obtained. Since the light control member 502 can be irradiated with uniform light with high luminance, the number of light emitting devices can be further reduced.
- the present invention is an illumination light source that is required to mix light from a semiconductor light emitting element and light from a phosphor that converts the wavelength of the light, to suppress luminance variation, and to emit uniform light with small color unevenness. It is suitable for the light emitting device and the surface light source device using the same.
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Abstract
Description
図1を参照に実施の形態1に係る発光装置の構成について説明する。
実施の形態1に対し、さらに発光素子からの光取出し効率を高めた構成について図2を参照しながら説明する。発光素子201を実装する発光装置200は、発光素子201の一方の電極と電気的に接続される第1の金属フレーム203と、発光素子201の他方の電極と電気的に接続される第2の金属フレーム204とを有し、それぞれの金属フレーム203,204を固定するとともに発光素子201を囲み、光を反射させる反射面205を有する樹脂部206が形成されている。また、それぞれの金属フレーム203,204の表面は発光素子201が発する光と、後述の蛍光体から発せられた光とを反射する。
さらに高輝度を実現する構成として、複数の発光素子を設置した発光装置300について、図5、図6を参照に説明する。ここでは、複数の発光素子301,301,‥を実装し、さらに発光装置として小型化を実現するために、発光素子間隔も狭くなっている。従って、発光素子301の上面と側面のスペースが小さいため、色ムラに対しては蛍光体含有樹脂の厚みの差よりも、発光素子301の強度分布が主要因となる。上面に電極部302、貫通配線303、下面に端子部304を有するセラミック基板305上に、複数の発光素子301をフリップチップ構成で実装している。
複数の発光素子を設置し、さらに光取出し効率を向上させる構成について図7を参照に説明する。発光装置400は、複数の発光素子401,401を実装し電気的に接続される第1の金属フレーム402、第2の金属フレーム403と、発光素子401の別の電極と電気的に接続される第3の金属フレーム404とを有し、それぞれの金属フレームを固定するともに複数の発光素子401を囲み、光を反射させる反射面405を有する樹脂部406が形成されている。ここで、樹脂部406は光を反射する材料、例えば酸化チタン等が含有されていても良い。
上記の実施の形態に係る発光装置を用いた面光源装置について図9を参照に説明する。バックライト装置500内には、液晶パネル501、液晶パネル背面に貼りつけられた調光部材502、調光部材と所定の間隔をあけて配置され、プリント基板503上に実装された発光装置504を有する面光源装置505が組み込まれている。調光部材502は、拡散板506、拡散シート507、第1の調光シート508、第2の調光シート509から構成されており、拡散板506は面光源装置505からの光を拡散させるために、表面が粗面化された樹脂製の板材である。
100、200、230、240、300、400、480、504 発光装置
102、302 電極部
103、303 貫通配線
104、304 端子部
105、305 セラミック基板
106、209、306、408 波長変換層
107、210、307、409 光散乱層
108、208、211、308、412 透光性樹脂層
109、212、309、410 光反射材の密度の高い領域
110、213、310、411 光反射材の密度の低い領域
205、405 反射面
206、406 樹脂部
214 窪み
500 バックライト装置
501 液晶パネル
502 調光部材
505 面光源装置
Claims (9)
- 実装基板と、
少なくとも一つ以上の半導体発光素子と、
前記半導体発光素子から出射される第一の光を吸収し前記第一の光よりも長波長の第二の光を発光する機能を有する、少なくとも一種類の物質を含む波長変換層と、
前記第一の光と前記第二の光とを反射する反射材を含む光散乱層と
を有し、
前記光散乱層は前記半導体発光素子の発光面の上部に設置され、かつ前記光散乱層内での前記反射材の分布において、前記半導体発光素子の発光面の中心部分の直上領域における密度が、前記発光面の中心部分の直上領域以外における密度よりも高いことを特徴とする発光装置。 - 前記反射材が絶縁体もしくは金属からなることを特徴とする請求項1に記載の発光装置。
- 前記波長変換層は蛍光体を含有していることを特徴とする請求項1または2のいずれかに記載の発光装置。
- 前記実装基板が前記第一の光と前記第二の光とを反射する金属あるいは絶縁材からなることを特徴とする請求項1から3のいずれかに記載の発光装置。
- 前記半導体発光素子の周囲に、前記第一の光と前記第二の光とを反射する機能を有する反射部を設置したことを特徴とする請求項1から4のいずれかに記載の発光装置。
- 前記半導体発光素子の周囲に、前記半導体発光素子の前記発光面以外の部分の一部と接するように、前記第一の光と前記第二の光とを透過する層を形成したことを特徴とする請求項1から5のいずれかに記載の発光装置。
- 前記第一の光と前記第二の光とを集光あるいは拡散させるレンズを有することを特徴とする請求項1から6のいずれかに記載の発光装置。
- 前記半導体発光素子が窒化物半導体からなることを特徴とする請求項1から7のいずれかに記載の発光装置。
- 前記請求項1から8のいずれかに記載の複数の発光装置が、縦列及び横列に所定の間隔で配置されていることを特徴とする面光源装置。
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JP2011552681A JPWO2011096171A1 (ja) | 2010-02-08 | 2011-01-25 | 発光装置およびこれを用いた面光源装置 |
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JP2013070001A (ja) * | 2011-09-26 | 2013-04-18 | Toshiba Lighting & Technology Corp | 発光装置及びこれを備えた照明器具 |
US20130146911A1 (en) * | 2011-12-09 | 2013-06-13 | Advanced Optoelectronic Technology, Inc. | Light emitting diode package and lens module used therein |
JP2013125869A (ja) * | 2011-12-14 | 2013-06-24 | Ibiden Co Ltd | 電子部品実装基板、発光装置、及びディスプレイ装置 |
JP2014072309A (ja) * | 2012-09-28 | 2014-04-21 | Stanley Electric Co Ltd | 自動車ヘッドランプ用発光装置及びその製造方法 |
JP2014096529A (ja) * | 2012-11-12 | 2014-05-22 | Stanley Electric Co Ltd | 発光素子 |
JP2015226042A (ja) * | 2014-05-30 | 2015-12-14 | 日亜化学工業株式会社 | 発光装置 |
JP2016076652A (ja) * | 2014-10-08 | 2016-05-12 | 株式会社東芝 | Ledモジュールおよび照明装置 |
JP2018022808A (ja) * | 2016-08-04 | 2018-02-08 | パナソニックIpマネジメント株式会社 | 発光装置及び照明装置 |
JP2018056497A (ja) * | 2016-09-30 | 2018-04-05 | 日亜化学工業株式会社 | 発光装置 |
JP2018107257A (ja) * | 2016-12-26 | 2018-07-05 | 日亜化学工業株式会社 | 発光装置 |
JP2019135767A (ja) * | 2019-03-06 | 2019-08-15 | 日亜化学工業株式会社 | 発光装置 |
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US20120305973A1 (en) | 2012-12-06 |
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