JP5954293B2 - 研磨用の発泡ウレタンパッドのドレッシング装置 - Google Patents
研磨用の発泡ウレタンパッドのドレッシング装置 Download PDFInfo
- Publication number
- JP5954293B2 JP5954293B2 JP2013216738A JP2013216738A JP5954293B2 JP 5954293 B2 JP5954293 B2 JP 5954293B2 JP 2013216738 A JP2013216738 A JP 2013216738A JP 2013216738 A JP2013216738 A JP 2013216738A JP 5954293 B2 JP5954293 B2 JP 5954293B2
- Authority
- JP
- Japan
- Prior art keywords
- diamond abrasive
- dressing
- abrasive grains
- diamond
- count
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 title claims description 60
- 238000005498 polishing Methods 0.000 title claims description 37
- 239000010432 diamond Substances 0.000 claims description 130
- 229910003460 diamond Inorganic materials 0.000 claims description 129
- 239000006061 abrasive grain Substances 0.000 claims description 100
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 27
- 239000006260 foam Substances 0.000 claims description 25
- 239000008188 pellet Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 7
- 238000003825 pressing Methods 0.000 claims description 3
- 235000012489 doughnuts Nutrition 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 57
- 230000000052 comparative effect Effects 0.000 description 14
- 238000005259 measurement Methods 0.000 description 10
- 238000005187 foaming Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000000903 blocking effect Effects 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/12—Dressing tools; Holders therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
- B24D3/06—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements
- B24D3/10—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements for porous or cellular structure, e.g. for use with diamonds as abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/463—Mechanical treatment, e.g. grinding, ultrasonic treatment
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013216738A JP5954293B2 (ja) | 2013-10-17 | 2013-10-17 | 研磨用の発泡ウレタンパッドのドレッシング装置 |
DE112014003809.1T DE112014003809T5 (de) | 2013-10-17 | 2014-09-22 | Vorrichtung zum Richten eines Urethanschaum-Tuchs zum Polieren |
SG11201601893YA SG11201601893YA (en) | 2013-10-17 | 2014-09-22 | Apparatus for dressing urethane foam pad for use in polishing |
KR1020167006444A KR102112535B1 (ko) | 2013-10-17 | 2014-09-22 | 연마용 발포 우레탄 패드의 드레싱 장치 |
US14/917,105 US9981361B2 (en) | 2013-10-17 | 2014-09-22 | Apparatus for dressing urethane foam pad for use in polishing |
PCT/JP2014/004833 WO2015056405A1 (ja) | 2013-10-17 | 2014-09-22 | 研磨用の発泡ウレタンパッドのドレッシング装置 |
CN201480049857.0A CN105531082B (zh) | 2013-10-17 | 2014-09-22 | 用于研磨的发泡聚胺酯垫的修整装置 |
TW103134780A TWI608904B (zh) | 2013-10-17 | 2014-10-06 | Trimming device for polishing polyurethane foam pad |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013216738A JP5954293B2 (ja) | 2013-10-17 | 2013-10-17 | 研磨用の発泡ウレタンパッドのドレッシング装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015077665A JP2015077665A (ja) | 2015-04-23 |
JP5954293B2 true JP5954293B2 (ja) | 2016-07-20 |
Family
ID=52827866
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013216738A Active JP5954293B2 (ja) | 2013-10-17 | 2013-10-17 | 研磨用の発泡ウレタンパッドのドレッシング装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9981361B2 (zh) |
JP (1) | JP5954293B2 (zh) |
KR (1) | KR102112535B1 (zh) |
CN (1) | CN105531082B (zh) |
DE (1) | DE112014003809T5 (zh) |
SG (1) | SG11201601893YA (zh) |
TW (1) | TWI608904B (zh) |
WO (1) | WO2015056405A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101392401B1 (ko) * | 2012-11-30 | 2014-05-07 | 이화다이아몬드공업 주식회사 | 컨디셔너 겸용 웨이퍼 리테이너링 및 상기 리테이너링 제조방법 |
CN104875131A (zh) * | 2015-05-28 | 2015-09-02 | 江苏耐尔特钻石有限公司 | 一种金刚石磨盘 |
US20170008146A1 (en) * | 2015-07-10 | 2017-01-12 | Abrasive Technology, Inc. | Chemical mechanical planarization conditioner |
US10857651B2 (en) * | 2017-11-20 | 2020-12-08 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus of chemical mechanical polishing and operating method thereof |
NL2022445A (en) * | 2018-02-06 | 2019-02-18 | Asml Holding Nv | System, Device and Method for Reconditioning a Substrate Support |
CN115781518A (zh) * | 2022-10-08 | 2023-03-14 | 杭州中欣晶圆半导体股份有限公司 | 抛光布修整工艺 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4908046A (en) * | 1989-02-14 | 1990-03-13 | Wiand Ronald C | Multilayer abrading tool and process |
US5271547A (en) * | 1992-09-15 | 1993-12-21 | Tunco Manufacturing, Inc. | Method for brazing tungsten carbide particles and diamond crystals to a substrate and products made therefrom |
JP3052896B2 (ja) | 1997-06-13 | 2000-06-19 | 日本電気株式会社 | 研磨布表面のドレス治具及びその製造方法 |
JP3772946B2 (ja) * | 1999-03-11 | 2006-05-10 | 株式会社荏原製作所 | ドレッシング装置及び該ドレッシング装置を備えたポリッシング装置 |
JP3527448B2 (ja) * | 1999-12-20 | 2004-05-17 | 株式会社リード | Cmp研磨布用ドレッサー及びその製造方法 |
JP2001252871A (ja) * | 2000-03-10 | 2001-09-18 | Matsushita Electric Ind Co Ltd | 研磨布用ドレッサーおよびその製造方法 |
JP2001341061A (ja) * | 2000-06-02 | 2001-12-11 | Toshiba Mach Co Ltd | ドレッシング装置 |
JP2004001152A (ja) * | 2002-06-03 | 2004-01-08 | Tokyo Seimitsu Co Ltd | ドレッサ、ドレッシング方法、研磨装置、及び研磨方法 |
JP4216025B2 (ja) | 2002-09-09 | 2009-01-28 | 株式会社リード | 研磨布用ドレッサー及びそれを用いた研磨布のドレッシング方法 |
US20110275288A1 (en) * | 2010-05-10 | 2011-11-10 | Chien-Min Sung | Cmp pad dressers with hybridized conditioning and related methods |
US9724802B2 (en) * | 2005-05-16 | 2017-08-08 | Chien-Min Sung | CMP pad dressers having leveled tips and associated methods |
US7169031B1 (en) * | 2005-07-28 | 2007-01-30 | 3M Innovative Properties Company | Self-contained conditioning abrasive article |
JP4946402B2 (ja) * | 2006-12-05 | 2012-06-06 | 三菱マテリアル株式会社 | Cmpコンディショナおよびその製造方法 |
JP5502987B2 (ja) * | 2009-03-24 | 2014-05-28 | サンーゴバン アブレイシブズ,インコーポレイティド | 化学機械平坦化パッドコンディショナとして使用するための研磨工具 |
TWI380878B (zh) | 2009-04-21 | 2013-01-01 | Sung Chien Min | Combined Dressing Machine and Its Making Method |
US20110104989A1 (en) * | 2009-04-30 | 2011-05-05 | First Principles LLC | Dressing bar for embedding abrasive particles into substrates |
JP5422262B2 (ja) * | 2009-06-01 | 2014-02-19 | ニッタ・ハース株式会社 | 研磨パッドのコンディショナー |
WO2011039775A1 (en) * | 2009-09-30 | 2011-04-07 | Department Of Biotechnology | A modified method of agglutination to detect infections caused by microorganisms |
CN102049737B (zh) * | 2009-10-29 | 2012-08-29 | 宋健民 | 抛光垫修整器 |
JP2012130995A (ja) * | 2010-12-22 | 2012-07-12 | Nitta Haas Inc | ドレッサ |
ITMI20110850A1 (it) * | 2011-05-16 | 2012-11-17 | Nicola Fiore | Utensile multi-abrasivo |
WO2012162430A2 (en) * | 2011-05-23 | 2012-11-29 | Chien-Min Sung | Cmp pad dresser having leveled tips and associated methods |
US9242342B2 (en) * | 2012-03-14 | 2016-01-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Manufacture and method of making the same |
TWM458275U (zh) | 2013-03-08 | 2013-08-01 | Tera Xtal Technology Corp | 藍寶石拋光墊修整器 |
TWM465659U (zh) * | 2013-04-08 | 2013-11-11 | jian-min Song | 化學機械硏磨修整器 |
-
2013
- 2013-10-17 JP JP2013216738A patent/JP5954293B2/ja active Active
-
2014
- 2014-09-22 KR KR1020167006444A patent/KR102112535B1/ko active IP Right Grant
- 2014-09-22 SG SG11201601893YA patent/SG11201601893YA/en unknown
- 2014-09-22 US US14/917,105 patent/US9981361B2/en active Active
- 2014-09-22 DE DE112014003809.1T patent/DE112014003809T5/de active Pending
- 2014-09-22 CN CN201480049857.0A patent/CN105531082B/zh active Active
- 2014-09-22 WO PCT/JP2014/004833 patent/WO2015056405A1/ja active Application Filing
- 2014-10-06 TW TW103134780A patent/TWI608904B/zh active
Also Published As
Publication number | Publication date |
---|---|
WO2015056405A1 (ja) | 2015-04-23 |
US9981361B2 (en) | 2018-05-29 |
KR20160071366A (ko) | 2016-06-21 |
JP2015077665A (ja) | 2015-04-23 |
TWI608904B (zh) | 2017-12-21 |
SG11201601893YA (en) | 2016-04-28 |
CN105531082B (zh) | 2017-11-10 |
DE112014003809T5 (de) | 2016-05-12 |
TW201532742A (zh) | 2015-09-01 |
US20160214230A1 (en) | 2016-07-28 |
CN105531082A (zh) | 2016-04-27 |
KR102112535B1 (ko) | 2020-05-20 |
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