SG11201601893YA - Apparatus for dressing urethane foam pad for use in polishing - Google Patents
Apparatus for dressing urethane foam pad for use in polishingInfo
- Publication number
- SG11201601893YA SG11201601893YA SG11201601893YA SG11201601893YA SG11201601893YA SG 11201601893Y A SG11201601893Y A SG 11201601893YA SG 11201601893Y A SG11201601893Y A SG 11201601893YA SG 11201601893Y A SG11201601893Y A SG 11201601893YA SG 11201601893Y A SG11201601893Y A SG 11201601893YA
- Authority
- SG
- Singapore
- Prior art keywords
- dressing
- polishing
- urethane foam
- foam pad
- pad
- Prior art date
Links
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 title 1
- 239000006260 foam Substances 0.000 title 1
- 238000005498 polishing Methods 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/12—Dressing tools; Holders therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
- B24D3/06—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements
- B24D3/10—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements for porous or cellular structure, e.g. for use with diamonds as abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/463—Mechanical treatment, e.g. grinding, ultrasonic treatment
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013216738A JP5954293B2 (ja) | 2013-10-17 | 2013-10-17 | 研磨用の発泡ウレタンパッドのドレッシング装置 |
PCT/JP2014/004833 WO2015056405A1 (ja) | 2013-10-17 | 2014-09-22 | 研磨用の発泡ウレタンパッドのドレッシング装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201601893YA true SG11201601893YA (en) | 2016-04-28 |
Family
ID=52827866
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201601893YA SG11201601893YA (en) | 2013-10-17 | 2014-09-22 | Apparatus for dressing urethane foam pad for use in polishing |
Country Status (8)
Country | Link |
---|---|
US (1) | US9981361B2 (zh) |
JP (1) | JP5954293B2 (zh) |
KR (1) | KR102112535B1 (zh) |
CN (1) | CN105531082B (zh) |
DE (1) | DE112014003809T5 (zh) |
SG (1) | SG11201601893YA (zh) |
TW (1) | TWI608904B (zh) |
WO (1) | WO2015056405A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101392401B1 (ko) * | 2012-11-30 | 2014-05-07 | 이화다이아몬드공업 주식회사 | 컨디셔너 겸용 웨이퍼 리테이너링 및 상기 리테이너링 제조방법 |
CN104875131A (zh) * | 2015-05-28 | 2015-09-02 | 江苏耐尔特钻石有限公司 | 一种金刚石磨盘 |
US20170008146A1 (en) * | 2015-07-10 | 2017-01-12 | Abrasive Technology, Inc. | Chemical mechanical planarization conditioner |
US10857651B2 (en) | 2017-11-20 | 2020-12-08 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus of chemical mechanical polishing and operating method thereof |
WO2019154630A1 (en) * | 2018-02-06 | 2019-08-15 | Asml Netherlands B.V. | System, device and method for reconditioning a substrate support |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4908046A (en) * | 1989-02-14 | 1990-03-13 | Wiand Ronald C | Multilayer abrading tool and process |
US5271547A (en) * | 1992-09-15 | 1993-12-21 | Tunco Manufacturing, Inc. | Method for brazing tungsten carbide particles and diamond crystals to a substrate and products made therefrom |
JP3052896B2 (ja) | 1997-06-13 | 2000-06-19 | 日本電気株式会社 | 研磨布表面のドレス治具及びその製造方法 |
JP3772946B2 (ja) * | 1999-03-11 | 2006-05-10 | 株式会社荏原製作所 | ドレッシング装置及び該ドレッシング装置を備えたポリッシング装置 |
JP3527448B2 (ja) * | 1999-12-20 | 2004-05-17 | 株式会社リード | Cmp研磨布用ドレッサー及びその製造方法 |
JP2001252871A (ja) * | 2000-03-10 | 2001-09-18 | Matsushita Electric Ind Co Ltd | 研磨布用ドレッサーおよびその製造方法 |
JP2001341061A (ja) * | 2000-06-02 | 2001-12-11 | Toshiba Mach Co Ltd | ドレッシング装置 |
JP2004001152A (ja) * | 2002-06-03 | 2004-01-08 | Tokyo Seimitsu Co Ltd | ドレッサ、ドレッシング方法、研磨装置、及び研磨方法 |
JP4216025B2 (ja) | 2002-09-09 | 2009-01-28 | 株式会社リード | 研磨布用ドレッサー及びそれを用いた研磨布のドレッシング方法 |
US9724802B2 (en) * | 2005-05-16 | 2017-08-08 | Chien-Min Sung | CMP pad dressers having leveled tips and associated methods |
US20110275288A1 (en) * | 2010-05-10 | 2011-11-10 | Chien-Min Sung | Cmp pad dressers with hybridized conditioning and related methods |
US7169031B1 (en) | 2005-07-28 | 2007-01-30 | 3M Innovative Properties Company | Self-contained conditioning abrasive article |
JP4946402B2 (ja) * | 2006-12-05 | 2012-06-06 | 三菱マテリアル株式会社 | Cmpコンディショナおよびその製造方法 |
SG174351A1 (en) * | 2009-03-24 | 2011-10-28 | Saint Gobain Abrasives Inc | Abrasive tool for use as a chemical mechanical planarization pad conditioner |
TWI380878B (zh) | 2009-04-21 | 2013-01-01 | Sung Chien Min | Combined Dressing Machine and Its Making Method |
US20110159784A1 (en) * | 2009-04-30 | 2011-06-30 | First Principles LLC | Abrasive article with array of gimballed abrasive members and method of use |
JP5422262B2 (ja) * | 2009-06-01 | 2014-02-19 | ニッタ・ハース株式会社 | 研磨パッドのコンディショナー |
US8835121B2 (en) * | 2009-09-30 | 2014-09-16 | Department Of Biotechnology | Modified method of agglutination to detect infections caused by microorganisms |
CN102049737B (zh) * | 2009-10-29 | 2012-08-29 | 宋健民 | 抛光垫修整器 |
JP2012130995A (ja) * | 2010-12-22 | 2012-07-12 | Nitta Haas Inc | ドレッサ |
ITMI20110850A1 (it) * | 2011-05-16 | 2012-11-17 | Nicola Fiore | Utensile multi-abrasivo |
WO2012162430A2 (en) * | 2011-05-23 | 2012-11-29 | Chien-Min Sung | Cmp pad dresser having leveled tips and associated methods |
US9242342B2 (en) * | 2012-03-14 | 2016-01-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Manufacture and method of making the same |
TWM458275U (zh) | 2013-03-08 | 2013-08-01 | Tera Xtal Technology Corp | 藍寶石拋光墊修整器 |
TWM465659U (zh) * | 2013-04-08 | 2013-11-11 | jian-min Song | 化學機械硏磨修整器 |
-
2013
- 2013-10-17 JP JP2013216738A patent/JP5954293B2/ja active Active
-
2014
- 2014-09-22 SG SG11201601893YA patent/SG11201601893YA/en unknown
- 2014-09-22 WO PCT/JP2014/004833 patent/WO2015056405A1/ja active Application Filing
- 2014-09-22 CN CN201480049857.0A patent/CN105531082B/zh active Active
- 2014-09-22 KR KR1020167006444A patent/KR102112535B1/ko active IP Right Grant
- 2014-09-22 US US14/917,105 patent/US9981361B2/en active Active
- 2014-09-22 DE DE112014003809.1T patent/DE112014003809T5/de active Pending
- 2014-10-06 TW TW103134780A patent/TWI608904B/zh active
Also Published As
Publication number | Publication date |
---|---|
CN105531082B (zh) | 2017-11-10 |
DE112014003809T5 (de) | 2016-05-12 |
US9981361B2 (en) | 2018-05-29 |
JP2015077665A (ja) | 2015-04-23 |
US20160214230A1 (en) | 2016-07-28 |
CN105531082A (zh) | 2016-04-27 |
KR20160071366A (ko) | 2016-06-21 |
TW201532742A (zh) | 2015-09-01 |
TWI608904B (zh) | 2017-12-21 |
WO2015056405A1 (ja) | 2015-04-23 |
JP5954293B2 (ja) | 2016-07-20 |
KR102112535B1 (ko) | 2020-05-20 |
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