SG10201407062PA - Polishing apparatus and polishing method - Google Patents

Polishing apparatus and polishing method

Info

Publication number
SG10201407062PA
SG10201407062PA SG10201407062PA SG10201407062PA SG10201407062PA SG 10201407062P A SG10201407062P A SG 10201407062PA SG 10201407062P A SG10201407062P A SG 10201407062PA SG 10201407062P A SG10201407062P A SG 10201407062PA SG 10201407062P A SG10201407062P A SG 10201407062PA
Authority
SG
Singapore
Prior art keywords
polishing
polishing apparatus
polishing method
Prior art date
Application number
SG10201407062PA
Inventor
Taro Takahashi
Yuta Suzuki
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Publication of SG10201407062PA publication Critical patent/SG10201407062PA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
    • B24B49/105—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means using eddy currents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/12—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
SG10201407062PA 2013-11-01 2014-10-29 Polishing apparatus and polishing method SG10201407062PA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013228240A JP6030041B2 (en) 2013-11-01 2013-11-01 Polishing apparatus and polishing method

Publications (1)

Publication Number Publication Date
SG10201407062PA true SG10201407062PA (en) 2015-06-29

Family

ID=53007324

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201407062PA SG10201407062PA (en) 2013-11-01 2014-10-29 Polishing apparatus and polishing method

Country Status (6)

Country Link
US (1) US9272389B2 (en)
JP (1) JP6030041B2 (en)
KR (2) KR101711259B1 (en)
CN (1) CN104608055B (en)
SG (1) SG10201407062PA (en)
TW (1) TWI568539B (en)

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US20130017762A1 (en) * 2011-07-15 2013-01-17 Infineon Technologies Ag Method and Apparatus for Determining a Measure of a Thickness of a Polishing Pad of a Polishing Machine
SG11201701152WA (en) * 2014-09-02 2017-04-27 Ebara Corp End point detection method, polishing apparatus, and polishing method
TWI547348B (en) * 2015-08-31 2016-09-01 力晶科技股份有限公司 Chemical mechanical polishing apparatus and method
JP6775354B2 (en) 2015-10-16 2020-10-28 株式会社荏原製作所 Polishing equipment and polishing method
US10744617B2 (en) * 2015-10-16 2020-08-18 Ebara Corporation Polishing endpoint detection method
CN109689295B (en) * 2016-09-15 2021-08-06 应用材料公司 Chemical mechanical polishing intelligent ring
JP6357260B2 (en) 2016-09-30 2018-07-11 株式会社荏原製作所 Polishing apparatus and polishing method
CN108621033B (en) * 2017-03-21 2020-04-07 中芯国际集成电路制造(上海)有限公司 Polishing method of polishing pad
TWI816620B (en) 2017-04-21 2023-09-21 美商應用材料股份有限公司 Polishing apparatus using neural network for monitoring
KR101955274B1 (en) * 2017-04-24 2019-03-08 서우테크놀로지 주식회사 Semiconductor package grinder
CN109202719B (en) * 2017-07-03 2021-02-02 株式会社安川电机 Control method of grinding process
JP7098311B2 (en) * 2017-12-05 2022-07-11 株式会社荏原製作所 Polishing equipment and polishing method
JP7237083B2 (en) * 2018-03-12 2023-03-10 アプライド マテリアルズ インコーポレイテッド Filtering for polishing in-situ monitoring
TWI825075B (en) 2018-04-03 2023-12-11 美商應用材料股份有限公司 Polishing apparatus, polishing system, method, and computer storage medium using machine learning and compensation for pad thickness
CN108555771A (en) * 2018-04-25 2018-09-21 清华大学 The terminal of CMP tool determines that method, terminal determine system and CMP system
CN108807228B (en) * 2018-06-05 2020-10-16 安徽省华腾农业科技有限公司经开区分公司 Semiconductor chip production process
KR102570975B1 (en) * 2018-06-18 2023-08-28 주식회사 케이씨텍 Apparatus for measuring thickness of metal film and measurement method thereof
TWI828706B (en) * 2018-06-20 2024-01-11 美商應用材料股份有限公司 Method, computer program product, and polishing system for compensation for substrate doping for in-situ electromagnetic inductive monitoring
JP7084811B2 (en) * 2018-07-13 2022-06-15 株式会社荏原製作所 Polishing equipment and polishing method
CN109531424B (en) * 2019-01-09 2024-04-09 中国工程物理研究院激光聚变研究中心 Envelope type dressing method and device for polishing disk
JP7374710B2 (en) * 2019-10-25 2023-11-07 株式会社荏原製作所 Polishing method and polishing device
US11791224B2 (en) 2020-05-14 2023-10-17 Applied Materials, Inc. Technique for training neural network for use in in-situ monitoring during polishing and polishing system
KR20220114089A (en) 2020-06-24 2022-08-17 어플라이드 머티어리얼스, 인코포레이티드 Determination of Substrate Layer Thickness Using Polishing Pad Wear Compensation
US11794302B2 (en) 2020-12-15 2023-10-24 Applied Materials, Inc. Compensation for slurry composition in in-situ electromagnetic inductive monitoring

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US5876265A (en) * 1995-04-26 1999-03-02 Fujitsu Limited End point polishing apparatus and polishing method
JPH10202513A (en) * 1997-01-22 1998-08-04 Ebara Corp Polishing end point detecting method
JP2001018161A (en) * 1999-07-07 2001-01-23 Ebara Corp Polishing device
JP2001079752A (en) * 1999-09-08 2001-03-27 Hitachi Ltd Chemical machine polishing device and method for manufacturing semiconductor integrated circuit device using it
JP2001198813A (en) 2000-01-13 2001-07-24 Toshiba Corp Polishing device and its polishing method
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JP2003037090A (en) 2001-07-24 2003-02-07 Hitachi Ltd Method for manufacturing semiconductor integrated circuit device
US20040011462A1 (en) * 2002-06-28 2004-01-22 Lam Research Corporation Method and apparatus for applying differential removal rates to a surface of a substrate
US6945845B2 (en) * 2003-03-04 2005-09-20 Applied Materials, Inc. Chemical mechanical polishing apparatus with non-conductive elements
US7311004B2 (en) * 2003-03-10 2007-12-25 Capstan Ag Systems, Inc. Flow control and operation monitoring system for individual spray nozzles
JP4451111B2 (en) * 2003-10-20 2010-04-14 株式会社荏原製作所 Eddy current sensor
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JP4790475B2 (en) * 2006-04-05 2011-10-12 株式会社荏原製作所 Polishing apparatus, polishing method, and substrate film thickness measurement program
JP2009028856A (en) * 2007-07-27 2009-02-12 Tokyo Seimitsu Co Ltd Polishing end point detection method using torque change and apparatus thereof
JP5052413B2 (en) 2008-05-27 2012-10-17 株式会社荏原製作所 Substrate observation apparatus and substrate polishing apparatus
US8388408B2 (en) 2008-10-10 2013-03-05 Ebara Corporation Method of making diagram for use in selection of wavelength of light for polishing endpoint detection, method for selecting wavelength of light for polishing endpoint detection, and polishing endpoint detection method
JP2011000647A (en) 2009-06-16 2011-01-06 Ebara Corp Method for monitoring polishing
US20100120331A1 (en) * 2008-11-07 2010-05-13 Applied Materials, Inc. Endpoint control of multiple-wafer chemical mechanical polishing
JP5236596B2 (en) * 2009-08-19 2013-07-17 ファナック株式会社 Processing robot system
JP5511600B2 (en) * 2010-09-09 2014-06-04 株式会社荏原製作所 Polishing equipment
US20130065493A1 (en) * 2011-08-09 2013-03-14 Taro Takahashi Polishing monitoring method, polishing end point detection method, and polishing apparatus

Also Published As

Publication number Publication date
JP2015085487A (en) 2015-05-07
JP6030041B2 (en) 2016-11-24
CN104608055A (en) 2015-05-13
US9272389B2 (en) 2016-03-01
TWI568539B (en) 2017-02-01
KR101901508B1 (en) 2018-09-21
CN104608055B (en) 2017-09-22
KR101711259B1 (en) 2017-02-28
US20150125971A1 (en) 2015-05-07
KR20170015406A (en) 2017-02-08
KR20150051150A (en) 2015-05-11
TW201527045A (en) 2015-07-16

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