JP5944377B2 - 整合されたデバイスにおけるナノワイヤ回路 - Google Patents
整合されたデバイスにおけるナノワイヤ回路 Download PDFInfo
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- JP5944377B2 JP5944377B2 JP2013504905A JP2013504905A JP5944377B2 JP 5944377 B2 JP5944377 B2 JP 5944377B2 JP 2013504905 A JP2013504905 A JP 2013504905A JP 2013504905 A JP2013504905 A JP 2013504905A JP 5944377 B2 JP5944377 B2 JP 5944377B2
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- 239000002070 nanowire Substances 0.000 title claims description 111
- 230000005669 field effect Effects 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000003068 static effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
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Description
210とに接続される。
は、以降「Qバー」とも記載する。第1のpFETデバイス(M4)205は、Qノード204と、Qバー・ノード210と、電圧源ノード(Vdd)212とに接続される。第2のpFETデバイス(M2)207は、Vddノード212と、Qノード204と、Qバー・ノード210とに接続される。第3のnFETデバイス(M1)209は、Vssノード208と、Qノード204と、Qバー・ノード210とに接続される。第4のnFETデバイス(M5)211は、第2のビット線ノード
212と、WLノード206と、Qバー・ノード210とに接続される。
は、以降「BLバー」とも記載する。
101、301:pFETデバイス
102、302:入力ノード(A)
103、303:nFETデバイス
104、304:出力ノード(Q)
106、306:ソース電圧ノード(Vdd)
108、308:接地ノード(Vss)
320:第1のナノワイヤ
321:第2のナノワイヤ
352:シリコン部材
400:ナノワイヤSRAM回路
201、401:第1のnFETデバイス(M6)
202、402:第1のビット線ノード(BL)
203、403:第2のnFETデバイス(M3)
204、404:第1の出力ノード(Q)
205、405:第1のpFETデバイス(M4)
206、406a、406b:ワード線ノード
207、407:第2のpFETデバイス(M2)
208、408a、408b:接地ノードVss
209、409:第3のnFETデバイス(M1)
210、410:第2の出力ノード(Qバー)
211、411:第4のnFETデバイス(M5)
412a、412b:電圧源ノード(Vdd)
212、412:第2のビット線ノード(BLバー)
420:第1のナノワイヤ
421:第2のナノワイヤ
422:第3のナノワイヤ
423:第4のナノワイヤ
452、453:シリコン部材
Claims (5)
- 電圧源ノード及び接地ノードに接続された第1のナノワイヤと、
前記第1のナノワイヤ上に配置されたゲートを有する第1のp型電界効果トランジスタ(pFET)デバイスと、
前記第1のナノワイヤ上に配置されたゲートを有する第1のn型電界効果トランジスタ(nFET)デバイスと、
前記第1のpFETデバイスの前記ゲート及び前記第1のnFETデバイスの前記ゲートに接続された第3のノードと、
前記電圧源ノード及び前記接地ノードに接続された第2のナノワイヤと、
前記第2のナノワイヤ上に配置されたゲートを有する第2のp型電界効果トランジスタ(pFET)デバイスと、
前記第2のナノワイヤ上に配置されたゲートを有する第2のn型電界効果トランジスタ(nFET)デバイスと、
前記第2のpFETデバイスの前記ゲート及び前記第2のnFETデバイスの前記ゲートに接続された第4のノードと、
前記第4のノードと前記第1のpFETデバイスのドレイン領域及び前記第1のnFETデバイスのドレイン領域との間の接続と、
を含み、
前記ナノワイヤは、円柱形状を有すると共に、個別のFETが共有のナノワイヤを共有する
インバータ・デバイス。 - 前記ナノワイヤは、シリコン・ナノワイヤである、請求項1に記載のデバイス。
- 前記ナノワイヤは、基板の上に懸架される、請求項1に記載のデバイス。
- インバータ・デバイスを形成するための方法であって、
第1のナノワイヤを形成することと、
前記第1のナノワイヤ上に配置されたゲートを有する第1のp型電界効果トランジスタ(pFET)デバイスを形成することと、
前記第1のナノワイヤ上に配置されたゲートを有する第1のn型電界効果トランジスタ(nFET)デバイスを形成することと、
前記第1のpFETデバイスの前記ゲートを前記第1のnFETデバイスの前記ゲートに電気的に接続することと、
第2のナノワイヤを形成することと、
前記第2のナノワイヤ上に配置されたゲートを有する第2のp型電界効果トランジスタ(pFET)デバイスを形成することと、
前記第2のナノワイヤ上に配置されたゲートを有する第2のn型電界効果トランジスタ(nFET)デバイスを形成することと、
前記第2のpFETデバイスの前記ゲートを、前記第2のnFETデバイスの前記ゲートと、前記第1のpFETデバイスのドレイン領域と、前記第1のnFETデバイスのドレイン領域とに電気的に接続することと、
前記第1のpFETデバイスのソース領域を電圧源ノードに接続することと、
前記第1のnFETデバイスのソース領域を接地ノードに接続することと、
を含み、
前記ナノワイヤは、円柱形状を有すると共に、個別のFETが共有のナノワイヤを共有する
方法。 - 前記ナノワイヤは、基板の上に懸架される、請求項4に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/758,939 US8324940B2 (en) | 2010-04-13 | 2010-04-13 | Nanowire circuits in matched devices |
US12/758,939 | 2010-04-13 | ||
PCT/US2011/029304 WO2011129952A1 (en) | 2010-04-13 | 2011-03-22 | Nanowire circuits in matched devices |
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Publication Number | Publication Date |
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JP2013528931A JP2013528931A (ja) | 2013-07-11 |
JP5944377B2 true JP5944377B2 (ja) | 2016-07-05 |
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JP2013504905A Expired - Fee Related JP5944377B2 (ja) | 2010-04-13 | 2011-03-22 | 整合されたデバイスにおけるナノワイヤ回路 |
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Country | Link |
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US (2) | US8324940B2 (ja) |
JP (1) | JP5944377B2 (ja) |
CN (1) | CN102844870B (ja) |
DE (1) | DE112011100438B4 (ja) |
GB (1) | GB2494311B (ja) |
TW (1) | TWI493659B (ja) |
WO (1) | WO2011129952A1 (ja) |
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GB2494311A (en) | 2013-03-06 |
US8324940B2 (en) | 2012-12-04 |
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US8520430B2 (en) | 2013-08-27 |
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