JP5886279B2 - リソグラフィ装置およびリソグラフィ方法 - Google Patents
リソグラフィ装置およびリソグラフィ方法 Download PDFInfo
- Publication number
- JP5886279B2 JP5886279B2 JP2013515778A JP2013515778A JP5886279B2 JP 5886279 B2 JP5886279 B2 JP 5886279B2 JP 2013515778 A JP2013515778 A JP 2013515778A JP 2013515778 A JP2013515778 A JP 2013515778A JP 5886279 B2 JP5886279 B2 JP 5886279B2
- Authority
- JP
- Japan
- Prior art keywords
- graphene
- radiation
- lithographic apparatus
- chamber
- radiation beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 24
- 238000001459 lithography Methods 0.000 title claims description 10
- 230000005855 radiation Effects 0.000 claims description 230
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 192
- 229910021389 graphene Inorganic materials 0.000 claims description 184
- 239000002245 particle Substances 0.000 claims description 151
- 238000000059 patterning Methods 0.000 claims description 72
- 239000000463 material Substances 0.000 claims description 67
- 239000012528 membrane Substances 0.000 claims description 63
- 239000000356 contaminant Substances 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 51
- 230000003287 optical effect Effects 0.000 claims description 27
- 238000005286 illumination Methods 0.000 claims description 18
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 13
- 229910052750 molybdenum Inorganic materials 0.000 claims description 13
- 239000011733 molybdenum Substances 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 10
- 229910052707 ruthenium Inorganic materials 0.000 claims description 10
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- 229910052701 rubidium Inorganic materials 0.000 claims description 4
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 239000012466 permeate Substances 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 claims 2
- 229910021344 molybdenum silicide Inorganic materials 0.000 claims 2
- 239000010410 layer Substances 0.000 description 111
- 239000007789 gas Substances 0.000 description 91
- 230000003595 spectral effect Effects 0.000 description 75
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 46
- 229910052721 tungsten Inorganic materials 0.000 description 46
- 239000010937 tungsten Substances 0.000 description 46
- 239000010408 film Substances 0.000 description 21
- 230000005540 biological transmission Effects 0.000 description 13
- 230000001629 suppression Effects 0.000 description 13
- 230000008901 benefit Effects 0.000 description 11
- 239000000446 fuel Substances 0.000 description 11
- 238000003384 imaging method Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 9
- 229910001930 tungsten oxide Inorganic materials 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 8
- 230000008859 change Effects 0.000 description 8
- 230000001965 increasing effect Effects 0.000 description 7
- 230000009467 reduction Effects 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 238000011109 contamination Methods 0.000 description 5
- 238000006731 degradation reaction Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- -1 tillable) Natural products 0.000 description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- 238000005411 Van der Waals force Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 210000001747 pupil Anatomy 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 230000005653 Brownian motion process Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005537 brownian motion Methods 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 101150074899 gpa-10 gene Proteins 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/20—Graphite
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/0006—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 with means to keep optical surfaces clean, e.g. by preventing or removing dirt, stains, contamination, condensation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0891—Ultraviolet [UV] mirrors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/204—Filters in which spectral selection is performed by means of a conductive grid or array, e.g. frequency selective surfaces
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/52—Details
- G03B27/54—Lamp housings; Illuminating means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
- G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/24—Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/061—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements characterised by a multilayer structure
Description
[0001] 本出願は、2010年6月25日に出願された米国仮出願第61/358,645号および2010年7月9日に出願された米国仮出願第61/362,981号の利益を主張する。これら両方の仮出願の全体が参照により本明細書に組み込まれる。
ここで、λは、使用される放射の波長であり、NAは、パターンを印刷するために使用される投影システムの開口数である。k1は、レイリー定数とも呼ばれるプロセス依存調整係数であり、CDは、印刷されたフィーチャのフィーチャサイズ(またはクリティカルディメンジョン)である。式(1)から、フィーチャの最小印刷可能サイズの縮小は、3つの方法、すなわち露光波長λを短くすること、開口数NAを大きくすること、またはk1の値を小さくすること、によって達成可能であるということになる。
1.ステップモードにおいては、サポート構造(例えば、マスクテーブル)MTおよび基板テーブルWTを基本的に静止状態に保ちつつ、放射ビームに付けられたパターン全体を一度にターゲット部分C上に投影する(すなわち、単一静的露光)。その後、基板テーブルWTは、Xおよび/またはY方向に移動され、それによって別のターゲット部分Cを露光することができる。
2.スキャンモードにおいては、サポート構造(例えば、マスクテーブル)MTおよび基板テーブルWTを同期的にスキャンする一方で、放射ビームに付けられたパターンをターゲット部分C上に投影する(すなわち、単一動的露光)。サポート構造(例えば、マスクテーブル)MTに対する基板テーブルWTの速度および方向は、投影システムPSの(縮小)拡大率および像反転特性によって決めることができる。
3.別のモードにおいては、プログラマブルパターニングデバイスを保持した状態で、サポート構造(例えば、マスクテーブル)MTを基本的に静止状態に保ち、また基板テーブルWTを動かす、またはスキャンする一方で、放射ビームに付けられているパターンをターゲット部分C上に投影する。このモードにおいては、通常、パルス放射源が採用されており、さらにプログラマブルパターニングデバイスは、基板テーブルWTの移動後ごとに、またはスキャン中の連続する放射パルスと放射パルスとの間に、必要に応じて更新される。この動作モードは、前述の型のプログラマブルミラーアレイといったプログラマブルパターニングデバイスを利用するマスクレスリソグラフィに容易に適用できる。
Claims (18)
- リソグラフィ装置であって、
放射ビームを生成する放射源と、
前記放射ビームにパターンを与えてパターン付き放射ビームを形成するパターニングデバイスを支持するサポートと、
前記放射源と前記サポートとの間に位置するチャンバであって、前記放射ビームを反射する少なくとも1つの光コンポーネントを収容し、かつ前記放射源からの放射が該チャンバを通過することを可能にするチャンバと、
前記チャンバの一部を画定する膜であって、前記放射ビームが該膜を通過することを可能にし、かつ汚染粒子が該膜を通過することを防ぐ膜と、
ガスが前記チャンバの内側から前記チャンバの外側まで間接的な経路に沿って流れることを可能にする粒子トラップ構造であって、該粒子トラップ構造の該間接的な経路は、汚染粒子が前記チャンバの内側から前記チャンバの外側まで通過することを実質的に防ぐ粒子トラップ構造と、
を備え、
前記粒子トラップ構造は、各々から複数のプレートが延在する第1および第2の離間壁部材を備え、隣接するプレートは互いに間隔をおいて配置され、該プレートが互いにかみ合う重なり構造を形成するように、一方の隣接プレートは該第1壁部材から延在し、他方の隣接プレートは該第2壁部材から延在し、
前記膜は、前記第1壁部材に取り付けられる、リソグラフィ装置。 - 前記間接的な経路は、蛇行経路である、請求項1に記載のリソグラフィ装置。
- 前記蛇行経路は、犂耕体的である、請求項2に記載のリソグラフィ装置。
- 前記第1壁部材および前記第2壁部材の各々は、前記放射ビームの通過を可能にする開口を備える、請求項1に記載のリソグラフィ装置。
- 前記プレートは、平面であり、または湾曲している、請求項1に記載のリソグラフィ装置。
- 前記粒子トラップ構造は、汚染粒子を透過させず、かつガスが流れることを可能にするスポンジ状材料を含む、請求項1に記載のリソグラフィ装置。
- 前記膜は、ジルコニウム、シリコン、モリブデン、珪化モリブデン、イットリウム、ルビジウム、ストロンチウム、ニオビウム、ルテニウム、およびグラフェンからなる群から選択された少なくとも1つの材料を含む、請求項1乃至6のいずれか1項に記載のリソグラフィ装置。
- 前記膜は、グラフェンから、またはグラフェン派生物質から形成される、請求項7に記載のリソグラフィ装置。
- 前記膜および前記粒子トラップ構造は、前記リソグラフィデバイスのソースコレクタモジュールまたは照明システムの一部である、請求項1乃至8のいずれか1項に記載のリソグラフィ装置。
- リソグラフィ方法であって、
放射ビームを生成することと、
前記放射ビームを反射する少なくとも1つの光コンポーネントを収容するチャンバを介して前記放射ビームを誘導することであって、前記放射ビームはパターニングデバイスに向けて誘導され、該チャンバは膜を含むことと、
前記放射ビームが前記チャンバから前記膜を介して前記パターニングデバイスの方へ進む際に汚染粒子が前記膜を通過することを防ぐことと、
粒子トラップ構造を介して間接的な経路に沿って前記チャンバの内側から前記チャンバの外側までガスを流すことであって、該間接的な経路は、汚染粒子が前記チャンバの内側から前記チャンバの外側まで通過することを実質的に防ぐことと、
前記パターニングデバイスを用いて前記放射ビームにパターンを与えてパターン付き放射ビームを形成することと、
投影システムを用いて前記パターン付き放射ビームを基板上に投影することと、
を含み、
前記粒子トラップ構造は、各々から複数のプレートが延在する第1および第2の離間壁部材を備え、隣接するプレートは互いに間隔をおいて配置され、該プレートが互いにかみ合う重なり構造を形成するように、一方の隣接プレートは該第1壁部材から延在し、他方の隣接プレートは該第2壁部材から延在し、
前記膜は、前記第1壁部材に取り付けられる、リソグラフィ方法。 - 前記間接的な経路は、蛇行経路である、請求項10に記載の方法。
- 前記蛇行経路は、犂耕体的である、請求項11に記載の方法。
- 前記第1壁部材および前記第2壁部材の各々は、前記放射ビームの通過を可能にする開口を備える、請求項10に記載の方法。
- 前記プレートは、平面であり、または湾曲している、請求項10に記載の方法。
- 前記粒子トラップ構造は、汚染粒子を透過させず、かつガスが流れることを可能にするスポンジ状材料を含む、請求項10に記載の方法。
- 前記膜は、ジルコニウム、シリコン、モリブデン、珪化モリブデン、イットリウム、ルビジウム、ストロンチウム、ニオビウム、ルテニウム、およびグラフェンまたはグラフェン派生物質からなる群から選択された少なくとも1つの材料を含む、請求項10乃至15のいずれか1項に記載の方法。
- 前記膜は、グラフェンから、またはグラフェン派生物質から形成される、請求項16に記載の方法。
- 前記膜および前記粒子トラップ構造は、リソグラフィ装置のソースコレクタモジュールまたは照明システムの一部である、請求項10乃至17のいずれか1項に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US35864510P | 2010-06-25 | 2010-06-25 | |
US61/358,645 | 2010-06-25 | ||
US36298110P | 2010-07-09 | 2010-07-09 | |
US61/362,981 | 2010-07-09 | ||
PCT/EP2011/054057 WO2011160861A1 (en) | 2010-06-25 | 2011-03-17 | Lithographic apparatus and method |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015210878A Division JP6189907B2 (ja) | 2010-06-25 | 2015-10-27 | ペリクル膜およびリソグラフィ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013534727A JP2013534727A (ja) | 2013-09-05 |
JP5886279B2 true JP5886279B2 (ja) | 2016-03-16 |
Family
ID=44338539
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013515778A Active JP5886279B2 (ja) | 2010-06-25 | 2011-03-17 | リソグラフィ装置およびリソグラフィ方法 |
JP2015210878A Active JP6189907B2 (ja) | 2010-06-25 | 2015-10-27 | ペリクル膜およびリソグラフィ装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015210878A Active JP6189907B2 (ja) | 2010-06-25 | 2015-10-27 | ペリクル膜およびリソグラフィ装置 |
Country Status (8)
Country | Link |
---|---|
US (4) | US9395630B2 (ja) |
EP (2) | EP2518563A1 (ja) |
JP (2) | JP5886279B2 (ja) |
KR (5) | KR101853008B1 (ja) |
CN (4) | CN105700300B (ja) |
SG (1) | SG186072A1 (ja) |
TW (4) | TWI615687B (ja) |
WO (1) | WO2011160861A1 (ja) |
Families Citing this family (78)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105700300B (zh) | 2010-06-25 | 2019-06-18 | Asml荷兰有限公司 | 光谱纯度滤光片 |
CN103229248B (zh) * | 2010-09-27 | 2016-10-12 | 卡尔蔡司Smt有限责任公司 | 反射镜,包含这种反射镜的投射物镜,以及包含这种投射物镜的用于微光刻的投射曝光设备 |
JP5664119B2 (ja) * | 2010-10-25 | 2015-02-04 | ソニー株式会社 | 透明導電膜、透明導電膜の製造方法、光電変換装置および電子機器 |
NL2008345A (en) * | 2011-03-28 | 2012-10-01 | Asml Holding Nv | Lithographic apparatus and device manufacturing method. |
JP6151284B2 (ja) * | 2012-02-29 | 2017-06-21 | エーエスエムエル ネザーランズ ビー.ブイ. | 静電クランプ |
US20130250260A1 (en) * | 2012-03-23 | 2013-09-26 | Globalfoundries Inc. | Pellicles for use during euv photolithography processes |
DE102012204833A1 (de) * | 2012-03-27 | 2013-02-28 | Carl Zeiss Smt Gmbh | Glatte euv-spiegel und verfahren zu ihrer herstellung |
US9599912B2 (en) * | 2012-05-21 | 2017-03-21 | Asml Netherlands B.V. | Lithographic apparatus |
US9606445B2 (en) | 2012-08-03 | 2017-03-28 | Asml Netherlands B.V. | Lithographic apparatus and method of manufacturing a device |
US20140272308A1 (en) * | 2013-03-15 | 2014-09-18 | Solan, LLC | Graphite-Based Devices Incorporating A Graphene Layer With A Bending Angle |
KR101699655B1 (ko) * | 2013-03-15 | 2017-01-24 | 아사히 가세이 이-매터리얼즈 가부시키가이샤 | 펠리클막 및 펠리클 |
SG11201510807VA (en) * | 2013-05-01 | 2016-02-26 | Koninkl Philips Nv | Method of manufacturing a partially freestanding graphene crystal film and device comprising such a film |
EP3007206A4 (en) * | 2013-05-24 | 2017-03-15 | Mitsui Chemicals, Inc. | Pellicle and euv exposure device comprising same |
JP2015018228A (ja) * | 2013-06-10 | 2015-01-29 | 旭化成イーマテリアルズ株式会社 | ペリクル膜及びペリクル |
US9182686B2 (en) | 2013-06-13 | 2015-11-10 | Globalfoundries U.S. 2 Llc | Extreme ultraviolet radiation (EUV) pellicle formation apparatus |
US9057957B2 (en) | 2013-06-13 | 2015-06-16 | International Business Machines Corporation | Extreme ultraviolet (EUV) radiation pellicle formation method |
JP6445760B2 (ja) * | 2013-11-22 | 2018-12-26 | 三星電子株式会社Samsung Electronics Co.,Ltd. | 上層膜形成用組成物およびそれを用いたレジストパターン形成方法 |
US9804493B2 (en) | 2013-11-22 | 2017-10-31 | Samsung Electronics Co., Ltd. | Composition for forming topcoat layer and resist pattern formation method employing the same |
KR101552940B1 (ko) | 2013-12-17 | 2015-09-14 | 삼성전자주식회사 | 흑연-함유 박막을 포함하는 극자외선 리소그래피용 펠리클 막 |
US9360749B2 (en) | 2014-04-24 | 2016-06-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pellicle structure and method for forming the same |
EP3118683A4 (en) * | 2014-05-02 | 2017-11-01 | Mitsui Chemicals, Inc. | Pellicle frame, pellicle and manufacturing method thereof, exposure original plate and manufacturing method thereof, exposure device, and semiconductor device manufacturing method |
KR20180072844A (ko) | 2014-05-19 | 2018-06-29 | 미쯔이가가꾸가부시끼가이샤 | 펠리클막, 펠리클, 노광 원판, 노광 장치 및 반도체 장치의 제조 방법 |
CA3165048A1 (en) * | 2014-07-04 | 2016-01-07 | Asml Netherlands B.V. | Membranes for use within a lithographic apparatus and a lithographic apparatus comprising such a membrane |
JP2016033843A (ja) * | 2014-07-31 | 2016-03-10 | 株式会社東芝 | 不揮発性記憶装置およびその駆動方法 |
DE102014216240A1 (de) * | 2014-08-15 | 2016-02-18 | Carl Zeiss Smt Gmbh | Reflektives optisches Element |
WO2016043301A1 (ja) | 2014-09-19 | 2016-03-24 | 三井化学株式会社 | ペリクル、ペリクルの製造方法及びペリクルを用いた露光方法 |
KR101915912B1 (ko) | 2014-09-19 | 2018-11-06 | 미쯔이가가꾸가부시끼가이샤 | 펠리클, 그 제조 방법 및 노광 방법 |
KR102246875B1 (ko) * | 2014-11-13 | 2021-04-30 | 삼성전자 주식회사 | 그라파이트 층을 갖는 펠리클을 제조하는 방법 |
KR102402035B1 (ko) | 2014-11-14 | 2022-05-26 | 삼성전자주식회사 | 펠리클을 포함하는 마스크, 펠리클 리페어 장치, 및 기판 제조 설비 |
TWI724612B (zh) | 2014-11-17 | 2021-04-11 | 荷蘭商Asml荷蘭公司 | 護膜附接裝置 |
KR102254103B1 (ko) | 2015-01-07 | 2021-05-20 | 삼성전자주식회사 | 지지 층을 이용한 펠리클 제조 방법 |
KR102251999B1 (ko) * | 2015-01-09 | 2021-05-17 | 삼성전자주식회사 | 펠리클 및 이의 제조 방법 |
GB2534404A (en) | 2015-01-23 | 2016-07-27 | Cnm Tech Gmbh | Pellicle |
CN113721420A (zh) | 2015-02-03 | 2021-11-30 | Asml荷兰有限公司 | 掩模组件和相关联的方法 |
KR102366806B1 (ko) * | 2015-05-13 | 2022-02-23 | 삼성전자주식회사 | 열 축적을 방지하는 펠리클 및 이를 포함하는 극자외선 리소그래피 장치 |
US9915867B2 (en) | 2015-09-24 | 2018-03-13 | International Business Machines Corporation | Mechanical isolation control for an extreme ultraviolet (EUV) pellicle |
US20170090278A1 (en) * | 2015-09-30 | 2017-03-30 | G-Force Nanotechnology Ltd. | Euv pellicle film and manufacturing method thereof |
KR20180072786A (ko) * | 2015-10-22 | 2018-06-29 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치를 위한 펠리클 제조 방법, 리소그래피 장치를 위한 펠리클 장치, 리소그래피 장치, 디바이스 제조 방법, 펠리클 처리 장치, 및 펠리클 처리 방법 |
DE102015221209A1 (de) * | 2015-10-29 | 2017-05-04 | Carl Zeiss Smt Gmbh | Optische Baugruppe mit einem Schutzelement und optische Anordnung damit |
CN113156774A (zh) * | 2015-12-14 | 2021-07-23 | Asml荷兰有限公司 | 用于制造隔膜组件的方法 |
US9759997B2 (en) * | 2015-12-17 | 2017-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pellicle assembly and method for advanced lithography |
CN108700817B (zh) * | 2015-12-18 | 2022-04-01 | Asml荷兰有限公司 | 制造用于极紫外线光刻的隔膜组件的方法、隔膜组件、光刻设备及器件制造方法 |
KR102522012B1 (ko) * | 2015-12-23 | 2023-04-13 | 삼성전자주식회사 | 전도성 소자 및 이를 포함하는 전자 소자 |
CN105487350B (zh) * | 2016-01-26 | 2018-02-13 | 深圳市华星光电技术有限公司 | 一种防止镜组雾化的曝光装置 |
KR102186010B1 (ko) * | 2016-01-26 | 2020-12-04 | 한양대학교 산학협력단 | Euv 펠리클 구조체, 및 그 제조 방법 |
KR101792409B1 (ko) * | 2016-04-21 | 2017-11-21 | 한양대학교 산학협력단 | Euv 펠리클 구조체, 및 그 제조 방법 |
KR102501192B1 (ko) | 2016-04-25 | 2023-02-21 | 에이에스엠엘 네델란즈 비.브이. | Euv 리소그래피를 위한 멤브레인 |
KR101813185B1 (ko) | 2016-06-30 | 2018-01-30 | 삼성전자주식회사 | 포토마스크용 펠리클 및 이를 포함하는 노광 장치 |
WO2018019626A1 (en) * | 2016-07-29 | 2018-02-01 | Asml Holding N.V. | A membrane assembly and particle trap |
CN107971155B (zh) * | 2016-10-24 | 2019-11-22 | 林逸樵 | 一种用于材料拆层的喷嘴及其制造方法 |
JP2018077412A (ja) | 2016-11-11 | 2018-05-17 | 信越化学工業株式会社 | グラフェン膜の製造方法及びこれを用いたペリクルの製造方法 |
KR102649129B1 (ko) | 2016-11-16 | 2024-03-19 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
KR101813186B1 (ko) * | 2016-11-30 | 2017-12-28 | 삼성전자주식회사 | 포토마스크용 펠리클과 이를 포함하는 레티클 및 리소그래피용 노광 장치 |
DE102016224112A1 (de) | 2016-12-05 | 2017-01-26 | Carl Zeiss Smt Gmbh | Pellikel für projektionsbelichtungsanlagen mit mehreren schichten |
KR102330943B1 (ko) | 2017-03-10 | 2021-11-25 | 삼성전자주식회사 | 포토마스크용 펠리클과 이를 포함하는 레티클 및 리소그래피용 노광 장치 |
KR102310124B1 (ko) | 2017-03-28 | 2021-10-08 | 삼성전자주식회사 | 극자외선 노광용 펠리클, 포토마스크 조립체 및 펠리클의 제조 방법 |
NL2021084B1 (en) * | 2017-06-15 | 2019-03-27 | Asml Netherlands Bv | Pellicle and Pellicle Assembly |
JP6844443B2 (ja) * | 2017-06-23 | 2021-03-17 | 信越化学工業株式会社 | フォトリソグラフィ用ペリクル膜、ペリクル及びフォトマスク、露光方法並びに半導体デバイス又は液晶ディスプレイの製造方法 |
KR102532602B1 (ko) | 2017-07-27 | 2023-05-15 | 삼성전자주식회사 | 포토마스크용 펠리클 조성물, 이로부터 형성된 포토마스크용 펠리클, 그 제조방법, 펠리클을 함유한 레티클 및 레티클을 포함하는 리소그래피용 노광장치 |
WO2019020445A1 (en) * | 2017-07-28 | 2019-01-31 | Asml Netherlands B.V. | PARTICLE TRAPS AND BARRIERS FOR DEPLETION OF PARTICLES |
US10996556B2 (en) | 2017-07-31 | 2021-05-04 | Samsung Electronics Co., Ltd. | Pellicles for photomasks, reticles including the photomasks, and methods of manufacturing the pellicles |
TWI644953B (zh) * | 2017-09-21 | 2018-12-21 | 微相科技股份有限公司 | DUV mask frame protection film preparation method |
US11906907B2 (en) | 2017-12-12 | 2024-02-20 | Asml Netherlands B.V. | Apparatus and method for determining a condition associated with a pellicle |
KR102574161B1 (ko) | 2018-02-06 | 2023-09-06 | 삼성전자주식회사 | 펠리클 및 이를 포함하는 레티클 |
EP3764160A4 (en) | 2018-03-09 | 2021-12-01 | Kaneka Corporation | FILM INCLUDING A GRAPHITE FILM |
JP7368363B2 (ja) * | 2018-03-09 | 2023-10-24 | エーエスエムエル ネザーランズ ビー.ブイ. | グラフェンペリクルリソグラフィ装置 |
DE102018204364A1 (de) * | 2018-03-22 | 2019-09-26 | Carl Zeiss Smt Gmbh | Optische Anordnung für die EUV-Lithographie |
KR102576703B1 (ko) | 2018-05-17 | 2023-09-08 | 삼성전자주식회사 | 파편 차단 조립체를 구비한 광 발생 장치 및 포토리소그래피 장치와 이를 이용하는 집적회로 소자의 제조 방법 |
KR102634748B1 (ko) | 2018-06-15 | 2024-02-13 | 삼성전자주식회사 | 포토 마스크용 펠리클 및 이의 제조 방법 |
NL2023657B1 (en) * | 2018-09-28 | 2020-07-10 | Asml Netherlands Bv | Lithographic system and method |
JP2020098227A (ja) * | 2018-12-17 | 2020-06-25 | 信越化学工業株式会社 | フォトリソグラフィ用ペリクル膜及びこれを備えたペリクル |
KR20210004544A (ko) | 2019-07-05 | 2021-01-13 | 삼성전자주식회사 | 극자외선 리소그래피 장치 |
JP2021135403A (ja) * | 2020-02-27 | 2021-09-13 | 凸版印刷株式会社 | ペリクル膜、ペリクル、膜、グラフェンシート及びその製造方法 |
CN111647872A (zh) * | 2020-04-01 | 2020-09-11 | 湖南二零八先进科技有限公司 | 基于表面cvd生长石墨烯防止激光陀螺气体泄漏的方法 |
KR20220044006A (ko) | 2020-09-29 | 2022-04-06 | 삼성전자주식회사 | 극자외선 광원 시스템 |
KR102625228B1 (ko) | 2021-01-04 | 2024-01-15 | 한국표준과학연구원 | 오염 입자 포집부와 이를 포함하는 극자외선 노광 장치 |
KR102596427B1 (ko) | 2021-01-04 | 2023-10-31 | 한국표준과학연구원 | 오염 입자 차단부와 이를 포함하는 극자외선 노광 장치 |
DE102022201004A1 (de) | 2022-01-31 | 2023-08-03 | Carl Zeiss Smt Gmbh | Innengehäuseanordnung für eine optische anordnung |
Family Cites Families (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3127511B2 (ja) * | 1991-09-19 | 2001-01-29 | 株式会社日立製作所 | 露光装置および半導体装置の製造方法 |
JP3666055B2 (ja) | 1995-05-26 | 2005-06-29 | 株式会社ニコン | X線発生装置及びx線露光装置 |
US5793836A (en) | 1996-09-06 | 1998-08-11 | International Business Machines Corporation | X-ray mask pellicle |
GB9710062D0 (en) * | 1997-05-16 | 1997-07-09 | British Tech Group | Optical devices and methods of fabrication thereof |
JPH1151576A (ja) * | 1997-08-05 | 1999-02-26 | Shimazu Mekutemu Kk | トラップ装置 |
DE19808461A1 (de) * | 1998-03-02 | 1999-09-09 | Zeiss Carl Fa | Retikel mit Kristall-Trägermaterial |
US6197454B1 (en) | 1998-12-29 | 2001-03-06 | Intel Corporation | Clean-enclosure window to protect photolithographic mask |
JP2000349009A (ja) * | 1999-06-04 | 2000-12-15 | Nikon Corp | 露光方法及び装置 |
US6492067B1 (en) | 1999-12-03 | 2002-12-10 | Euv Llc | Removable pellicle for lithographic mask protection and handling |
JP4416238B2 (ja) | 1999-12-15 | 2010-02-17 | キヤノンアネルバ株式会社 | トラップ装置 |
JP2001201847A (ja) | 2000-01-19 | 2001-07-27 | Shin Etsu Chem Co Ltd | ペリクル容器 |
KR20030076238A (ko) | 2001-04-17 | 2003-09-26 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 극자외선 투과 계면 구조체 및 극자외선 리소그래피 투사장치 |
US6646720B2 (en) * | 2001-09-21 | 2003-11-11 | Intel Corporation | Euv reticle carrier with removable pellicle |
JP2005516240A (ja) | 2002-01-24 | 2005-06-02 | デュポン、フォウタマスクス、インク | フォトマスクおよびそれを製造する方法 |
US7295586B2 (en) | 2002-02-21 | 2007-11-13 | Finisar Corporation | Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs |
US7135120B2 (en) * | 2002-06-04 | 2006-11-14 | Lake Shore Cryotronics, Inc. | Method of manufacturing a spectral filter for green and shorter wavelengths |
DE60323911D1 (de) | 2002-08-27 | 2008-11-20 | Asml Netherlands Bv | Lithographischer Projektionsapparat und Reflektoranordnung für die Verwendung in diesem Apparat |
WO2004031855A2 (en) * | 2002-10-02 | 2004-04-15 | Mykrolis Corporation | Membrane and reticle-pellicle apparatus with purged pellicle-to-reticle gap using same |
JP2004327213A (ja) * | 2003-04-24 | 2004-11-18 | Komatsu Ltd | Euv光発生装置におけるデブリ回収装置 |
US7456932B2 (en) | 2003-07-25 | 2008-11-25 | Asml Netherlands B.V. | Filter window, lithographic projection apparatus, filter window manufacturing method, device manufacturing method and device manufactured thereby |
US7153615B2 (en) | 2003-08-20 | 2006-12-26 | Intel Corporation | Extreme ultraviolet pellicle using a thin film and supportive mesh |
DE102004008080A1 (de) * | 2004-02-19 | 2005-09-08 | Carl Zeiss Smt Ag | System zur Reinigung von Spülgasen |
US8173975B2 (en) | 2004-03-31 | 2012-05-08 | Koninklijke Philips Electronics N.V. | Method and device for removing particles generated by means of a radiation source during generation of short-wave radiation |
US7250620B2 (en) | 2005-01-20 | 2007-07-31 | Infineon Technologies Ag | EUV lithography filter |
GB0504312D0 (en) | 2005-03-02 | 2005-04-06 | Boc Group Plc | Trap device |
US7372623B2 (en) * | 2005-03-29 | 2008-05-13 | Asml Netherlands B.V. | Multi-layer spectral purity filter, lithographic apparatus including such a spectral purity filter, device manufacturing method, and device manufactured thereby |
US7336416B2 (en) | 2005-04-27 | 2008-02-26 | Asml Netherlands B.V. | Spectral purity filter for multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method |
US7397056B2 (en) * | 2005-07-06 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus, contaminant trap, and device manufacturing method |
WO2008048295A2 (en) | 2005-11-18 | 2008-04-24 | Northwestern University | Stable dispersions of polymer-coated graphitic nanoplatelets |
JP5128168B2 (ja) | 2006-04-24 | 2013-01-23 | 三菱電線工業株式会社 | 排気装置 |
US7449133B2 (en) | 2006-06-13 | 2008-11-11 | Unidym, Inc. | Graphene film as transparent and electrically conducting material |
US7723704B2 (en) | 2006-11-10 | 2010-05-25 | Globalfoundries Inc. | EUV pellicle with increased EUV light transmittance |
JPWO2008065821A1 (ja) | 2006-11-27 | 2010-03-04 | 株式会社ニコン | 光学素子、これを用いた露光装置、及びデバイス製造方法 |
JP2008258490A (ja) | 2007-04-06 | 2008-10-23 | Canon Inc | 露光装置及び原版 |
US8018578B2 (en) | 2007-04-19 | 2011-09-13 | Asml Netherlands B.V. | Pellicle, lithographic apparatus and device manufacturing method |
JP2009004647A (ja) * | 2007-06-22 | 2009-01-08 | Nikon Corp | 真空容器と真空排気方法及びeuv露光装置 |
DE102008041436A1 (de) | 2007-10-02 | 2009-04-09 | Carl Zeiss Smt Ag | Optisches Membranelement |
JP2009141177A (ja) | 2007-12-07 | 2009-06-25 | Canon Inc | Euv用ミラー及びそれを有するeuv露光装置 |
US8409450B2 (en) * | 2008-03-24 | 2013-04-02 | The Regents Of The University Of California | Graphene-based structure, method of suspending graphene membrane, and method of depositing material onto graphene membrane |
JP4644723B2 (ja) | 2008-03-31 | 2011-03-02 | 株式会社日立ハイテクノロジーズ | ナノチューブ探針を有する測定装置 |
US7851109B2 (en) * | 2008-03-31 | 2010-12-14 | Intel Corporation | Low stress pellicle frames and reticle pellicle assemblies |
JP4928494B2 (ja) | 2008-05-02 | 2012-05-09 | 信越化学工業株式会社 | ペリクルおよびペリクルの製造方法 |
US8536551B2 (en) * | 2008-06-12 | 2013-09-17 | Gigaphoton Inc. | Extreme ultra violet light source apparatus |
EP2297746A1 (en) | 2008-07-07 | 2011-03-23 | Philips Intellectual Property & Standards GmbH | Extreme uv radiation reflecting element comprising a sputter-resistant material |
KR20110055601A (ko) * | 2008-08-06 | 2011-05-25 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치용 광학 요소, 이러한 광학 요소를 포함하는 리소그래피 장치 및 광학 요소 생성 방법 |
WO2010034385A1 (en) | 2008-09-26 | 2010-04-01 | Asml Netherlands B.V. | Spectral purity filter, lithographic apparatus, and method for manufacturing a spectral purity filter |
WO2010065517A1 (en) * | 2008-12-01 | 2010-06-10 | The Trustees Of Columbia University In The City Of New York | Electromechanical devices and methods for fabrication of the same |
JP4770928B2 (ja) | 2009-01-13 | 2011-09-14 | ソニー株式会社 | 光学素子および固体撮像素子 |
US20100255984A1 (en) | 2009-04-03 | 2010-10-07 | Brookhaven Science Associates, Llc | Monolayer and/or Few-Layer Graphene On Metal or Metal-Coated Substrates |
US20100323113A1 (en) | 2009-06-18 | 2010-12-23 | Ramappa Deepak A | Method to Synthesize Graphene |
DE102009029282A1 (de) | 2009-09-08 | 2011-03-24 | Carl Zeiss Smt Gmbh | Optische Anordnung, insbesondere in einer Projektionsbelichtungsanlage für die EUV-Lithographie |
US9007565B2 (en) * | 2010-02-12 | 2015-04-14 | Asml Netherlands B.V. | Spectral purity filter |
CN105700300B (zh) | 2010-06-25 | 2019-06-18 | Asml荷兰有限公司 | 光谱纯度滤光片 |
CN103229248B (zh) | 2010-09-27 | 2016-10-12 | 卡尔蔡司Smt有限责任公司 | 反射镜,包含这种反射镜的投射物镜,以及包含这种投射物镜的用于微光刻的投射曝光设备 |
EP2541559B1 (en) * | 2011-06-30 | 2014-03-26 | Rohm and Haas Electronic Materials LLC | Transparent conductive articles |
JP2015018228A (ja) | 2013-06-10 | 2015-01-29 | 旭化成イーマテリアルズ株式会社 | ペリクル膜及びペリクル |
-
2011
- 2011-03-17 CN CN201610210083.6A patent/CN105700300B/zh active Active
- 2011-03-17 WO PCT/EP2011/054057 patent/WO2011160861A1/en active Application Filing
- 2011-03-17 CN CN201710699731.3A patent/CN107402417B/zh active Active
- 2011-03-17 EP EP12160749A patent/EP2518563A1/en not_active Withdrawn
- 2011-03-17 JP JP2013515778A patent/JP5886279B2/ja active Active
- 2011-03-17 US US13/704,222 patent/US9395630B2/en active Active
- 2011-03-17 KR KR1020137001957A patent/KR101853008B1/ko active IP Right Grant
- 2011-03-17 CN CN201180031217.3A patent/CN103080840B/zh active Active
- 2011-03-17 KR KR1020187004578A patent/KR101968675B1/ko active IP Right Grant
- 2011-03-17 KR KR1020187007749A patent/KR101969476B1/ko active IP Right Grant
- 2011-03-17 KR KR1020147003960A patent/KR101846336B1/ko active IP Right Grant
- 2011-03-17 EP EP11709702A patent/EP2465012B1/en active Active
- 2011-03-17 KR KR1020197009994A patent/KR102068146B1/ko active IP Right Grant
- 2011-03-17 CN CN201410077948.7A patent/CN103901737B/zh active Active
- 2011-03-17 SG SG2012086955A patent/SG186072A1/en unknown
- 2011-04-19 TW TW106116970A patent/TWI615687B/zh active
- 2011-04-19 TW TW100113567A patent/TWI545405B/zh active
- 2011-04-19 TW TW105113204A patent/TWI597584B/zh active
- 2011-04-19 TW TW103114084A patent/TWI545406B/zh active
-
2014
- 2014-02-14 US US14/181,076 patent/US9482960B2/en active Active
-
2015
- 2015-10-27 JP JP2015210878A patent/JP6189907B2/ja active Active
-
2016
- 2016-09-29 US US15/281,056 patent/US9989844B2/en active Active
-
2018
- 2018-05-08 US US15/974,661 patent/US10481510B2/en active Active
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6189907B2 (ja) | ペリクル膜およびリソグラフィ装置 | |
US9599912B2 (en) | Lithographic apparatus | |
WO2013152921A1 (en) | Pellicle, reticle assembly and lithographic apparatus | |
JP6144874B2 (ja) | リソグラフィ装置用の反射型光コンポーネントおよびデバイス製造方法 | |
JP2013519998A (ja) | スペクトル純度フィルタ | |
NL2006563A (en) | Lithographic apparatus and method. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140314 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141128 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20141128 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150225 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20150630 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151027 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20151104 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160128 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160210 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5886279 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |