JP5886279B2 - リソグラフィ装置およびリソグラフィ方法 - Google Patents
リソグラフィ装置およびリソグラフィ方法 Download PDFInfo
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- JP5886279B2 JP5886279B2 JP2013515778A JP2013515778A JP5886279B2 JP 5886279 B2 JP5886279 B2 JP 5886279B2 JP 2013515778 A JP2013515778 A JP 2013515778A JP 2013515778 A JP2013515778 A JP 2013515778A JP 5886279 B2 JP5886279 B2 JP 5886279B2
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- graphene
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- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
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Description
[0001] 本出願は、2010年6月25日に出願された米国仮出願第61/358,645号および2010年7月9日に出願された米国仮出願第61/362,981号の利益を主張する。これら両方の仮出願の全体が参照により本明細書に組み込まれる。
ここで、λは、使用される放射の波長であり、NAは、パターンを印刷するために使用される投影システムの開口数である。k1は、レイリー定数とも呼ばれるプロセス依存調整係数であり、CDは、印刷されたフィーチャのフィーチャサイズ(またはクリティカルディメンジョン)である。式(1)から、フィーチャの最小印刷可能サイズの縮小は、3つの方法、すなわち露光波長λを短くすること、開口数NAを大きくすること、またはk1の値を小さくすること、によって達成可能であるということになる。
1.ステップモードにおいては、サポート構造(例えば、マスクテーブル)MTおよび基板テーブルWTを基本的に静止状態に保ちつつ、放射ビームに付けられたパターン全体を一度にターゲット部分C上に投影する(すなわち、単一静的露光)。その後、基板テーブルWTは、Xおよび/またはY方向に移動され、それによって別のターゲット部分Cを露光することができる。
2.スキャンモードにおいては、サポート構造(例えば、マスクテーブル)MTおよび基板テーブルWTを同期的にスキャンする一方で、放射ビームに付けられたパターンをターゲット部分C上に投影する(すなわち、単一動的露光)。サポート構造(例えば、マスクテーブル)MTに対する基板テーブルWTの速度および方向は、投影システムPSの(縮小)拡大率および像反転特性によって決めることができる。
3.別のモードにおいては、プログラマブルパターニングデバイスを保持した状態で、サポート構造(例えば、マスクテーブル)MTを基本的に静止状態に保ち、また基板テーブルWTを動かす、またはスキャンする一方で、放射ビームに付けられているパターンをターゲット部分C上に投影する。このモードにおいては、通常、パルス放射源が採用されており、さらにプログラマブルパターニングデバイスは、基板テーブルWTの移動後ごとに、またはスキャン中の連続する放射パルスと放射パルスとの間に、必要に応じて更新される。この動作モードは、前述の型のプログラマブルミラーアレイといったプログラマブルパターニングデバイスを利用するマスクレスリソグラフィに容易に適用できる。
Claims (18)
- リソグラフィ装置であって、
放射ビームを生成する放射源と、
前記放射ビームにパターンを与えてパターン付き放射ビームを形成するパターニングデバイスを支持するサポートと、
前記放射源と前記サポートとの間に位置するチャンバであって、前記放射ビームを反射する少なくとも1つの光コンポーネントを収容し、かつ前記放射源からの放射が該チャンバを通過することを可能にするチャンバと、
前記チャンバの一部を画定する膜であって、前記放射ビームが該膜を通過することを可能にし、かつ汚染粒子が該膜を通過することを防ぐ膜と、
ガスが前記チャンバの内側から前記チャンバの外側まで間接的な経路に沿って流れることを可能にする粒子トラップ構造であって、該粒子トラップ構造の該間接的な経路は、汚染粒子が前記チャンバの内側から前記チャンバの外側まで通過することを実質的に防ぐ粒子トラップ構造と、
を備え、
前記粒子トラップ構造は、各々から複数のプレートが延在する第1および第2の離間壁部材を備え、隣接するプレートは互いに間隔をおいて配置され、該プレートが互いにかみ合う重なり構造を形成するように、一方の隣接プレートは該第1壁部材から延在し、他方の隣接プレートは該第2壁部材から延在し、
前記膜は、前記第1壁部材に取り付けられる、リソグラフィ装置。 - 前記間接的な経路は、蛇行経路である、請求項1に記載のリソグラフィ装置。
- 前記蛇行経路は、犂耕体的である、請求項2に記載のリソグラフィ装置。
- 前記第1壁部材および前記第2壁部材の各々は、前記放射ビームの通過を可能にする開口を備える、請求項1に記載のリソグラフィ装置。
- 前記プレートは、平面であり、または湾曲している、請求項1に記載のリソグラフィ装置。
- 前記粒子トラップ構造は、汚染粒子を透過させず、かつガスが流れることを可能にするスポンジ状材料を含む、請求項1に記載のリソグラフィ装置。
- 前記膜は、ジルコニウム、シリコン、モリブデン、珪化モリブデン、イットリウム、ルビジウム、ストロンチウム、ニオビウム、ルテニウム、およびグラフェンからなる群から選択された少なくとも1つの材料を含む、請求項1乃至6のいずれか1項に記載のリソグラフィ装置。
- 前記膜は、グラフェンから、またはグラフェン派生物質から形成される、請求項7に記載のリソグラフィ装置。
- 前記膜および前記粒子トラップ構造は、前記リソグラフィデバイスのソースコレクタモジュールまたは照明システムの一部である、請求項1乃至8のいずれか1項に記載のリソグラフィ装置。
- リソグラフィ方法であって、
放射ビームを生成することと、
前記放射ビームを反射する少なくとも1つの光コンポーネントを収容するチャンバを介して前記放射ビームを誘導することであって、前記放射ビームはパターニングデバイスに向けて誘導され、該チャンバは膜を含むことと、
前記放射ビームが前記チャンバから前記膜を介して前記パターニングデバイスの方へ進む際に汚染粒子が前記膜を通過することを防ぐことと、
粒子トラップ構造を介して間接的な経路に沿って前記チャンバの内側から前記チャンバの外側までガスを流すことであって、該間接的な経路は、汚染粒子が前記チャンバの内側から前記チャンバの外側まで通過することを実質的に防ぐことと、
前記パターニングデバイスを用いて前記放射ビームにパターンを与えてパターン付き放射ビームを形成することと、
投影システムを用いて前記パターン付き放射ビームを基板上に投影することと、
を含み、
前記粒子トラップ構造は、各々から複数のプレートが延在する第1および第2の離間壁部材を備え、隣接するプレートは互いに間隔をおいて配置され、該プレートが互いにかみ合う重なり構造を形成するように、一方の隣接プレートは該第1壁部材から延在し、他方の隣接プレートは該第2壁部材から延在し、
前記膜は、前記第1壁部材に取り付けられる、リソグラフィ方法。 - 前記間接的な経路は、蛇行経路である、請求項10に記載の方法。
- 前記蛇行経路は、犂耕体的である、請求項11に記載の方法。
- 前記第1壁部材および前記第2壁部材の各々は、前記放射ビームの通過を可能にする開口を備える、請求項10に記載の方法。
- 前記プレートは、平面であり、または湾曲している、請求項10に記載の方法。
- 前記粒子トラップ構造は、汚染粒子を透過させず、かつガスが流れることを可能にするスポンジ状材料を含む、請求項10に記載の方法。
- 前記膜は、ジルコニウム、シリコン、モリブデン、珪化モリブデン、イットリウム、ルビジウム、ストロンチウム、ニオビウム、ルテニウム、およびグラフェンまたはグラフェン派生物質からなる群から選択された少なくとも1つの材料を含む、請求項10乃至15のいずれか1項に記載の方法。
- 前記膜は、グラフェンから、またはグラフェン派生物質から形成される、請求項16に記載の方法。
- 前記膜および前記粒子トラップ構造は、リソグラフィ装置のソースコレクタモジュールまたは照明システムの一部である、請求項10乃至17のいずれか1項に記載の方法。
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