JP5717765B2 - スペクトル純度フィルタ - Google Patents
スペクトル純度フィルタ Download PDFInfo
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- JP5717765B2 JP5717765B2 JP2012552276A JP2012552276A JP5717765B2 JP 5717765 B2 JP5717765 B2 JP 5717765B2 JP 2012552276 A JP2012552276 A JP 2012552276A JP 2012552276 A JP2012552276 A JP 2012552276A JP 5717765 B2 JP5717765 B2 JP 5717765B2
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- 230000003595 spectral effect Effects 0.000 title claims description 152
- 230000005855 radiation Effects 0.000 claims description 212
- 239000000463 material Substances 0.000 claims description 74
- 229910000691 Re alloy Inorganic materials 0.000 claims description 51
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 35
- 239000011733 molybdenum Substances 0.000 claims description 33
- 229910052750 molybdenum Inorganic materials 0.000 claims description 32
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 28
- 239000010937 tungsten Substances 0.000 claims description 28
- 229910052721 tungsten Inorganic materials 0.000 claims description 26
- 229910045601 alloy Inorganic materials 0.000 claims description 23
- 239000000956 alloy Substances 0.000 claims description 23
- 239000002105 nanoparticle Substances 0.000 claims description 23
- DECCZIUVGMLHKQ-UHFFFAOYSA-N rhenium tungsten Chemical compound [W].[Re] DECCZIUVGMLHKQ-UHFFFAOYSA-N 0.000 claims description 18
- XWHXQUBZGDADCU-UHFFFAOYSA-N [Mo].[W].[Re] Chemical compound [Mo].[W].[Re] XWHXQUBZGDADCU-UHFFFAOYSA-N 0.000 claims description 16
- YUSUJSHEOICGOO-UHFFFAOYSA-N molybdenum rhenium Chemical compound [Mo].[Mo].[Re].[Re].[Re] YUSUJSHEOICGOO-UHFFFAOYSA-N 0.000 claims description 16
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 13
- 229910052702 rhenium Inorganic materials 0.000 claims description 12
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 12
- 238000001953 recrystallisation Methods 0.000 claims description 11
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 claims description 10
- 238000001228 spectrum Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 description 38
- 238000000059 patterning Methods 0.000 description 26
- 239000010410 layer Substances 0.000 description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 229910052710 silicon Inorganic materials 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- 239000001257 hydrogen Substances 0.000 description 12
- 229910052739 hydrogen Inorganic materials 0.000 description 12
- 238000005286 illumination Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 239000007789 gas Substances 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- 239000000356 contaminant Substances 0.000 description 6
- 239000000446 fuel Substances 0.000 description 6
- 238000001459 lithography Methods 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 3
- 229910001080 W alloy Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000009304 pastoral farming Methods 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 210000001747 pupil Anatomy 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- -1 Ce 2 O 3 Inorganic materials 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 238000004299 exfoliation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 101000805921 Strongylocentrotus purpuratus Upstream stimulatory factor Proteins 0.000 description 1
- 101000671634 Xenopus borealis Upstream stimulatory factor 1 Proteins 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/201—Filters in the form of arrays
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Environmental & Geological Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- X-Ray Techniques (AREA)
- Spectrometry And Color Measurement (AREA)
Description
[0001] 本特許出願は、参照により全体が本明細書に組み込まれる、2010年2月12日出願の米国仮特許出願第61/304,115号の利益を請求する。
上の式で、λは、使用される放射の波長であり、NAは、パターンを印刷(つまり、付与)するために使用される投影システムの開口数であり、k1は、レイリー定数とも呼ばれているプロセス依存調節係数であり、CDは、印刷された(つまり、付与された)フィーチャのフィーチャサイズ(またはクリティカルディメンジョン)である。式(1)から、フィーチャの最小印刷可能(つまり、付与可能)サイズの縮小は、以下の3つの方法:露光波長λを短くすることによって、開口数NAを大きくすることによって、あるいはk1の値を小さくすることによって、達成することができると言える。
Claims (15)
- 複数のアパーチャが貫通した材料体を備え、
前記アパーチャが、第1波長を有する放射を抑制し、かつ第2波長を有する放射の少なくとも一部分が該アパーチャを透過することができるように配置され、前記放射の第2波長が、前記放射の第1波長よりも短く、
前記材料体が、タングステン‐モリブデン合金またはモリブデン‐レニウム合金またはタングステン‐レニウム合金またはタングステン‐モリブデン‐レニウム合金から形成される、
スペクトル純度フィルタ。 - 前記合金中のレニウムの含有量は、原子百分率で、
前記モリブデン‐レニウム合金に対して、約0.1%〜約49%、
前記タングステン‐レニウム合金に対して、約0.1%〜約27%
前記タングステン‐モリブデン‐レニウム合金に対して、約0.1%〜49%である、
請求項1に記載のスペクトル純度フィルタ。 - 前記材料体が、さらに、該材料体全体としての再結晶温度を高めるために複数のナノ粒子を備える、請求項1または2に記載のスペクトル純度フィルタ。
- 前記ナノ粒子が、Al 2O3、HfO2、ZrO2、Y2O3、MgO、La2O3、Ce2O3、SrOおよびHfCのうちの1つ以上から成る、請求項3に記載のスペクトル純度フィルタ。
- 前記ナノ粒子が、前記材料体内で複数の層に分散される、請求項3または4に記載のスペクトル純度フィルタ。
- 複数のアパーチャが貫通した材料体を備え、
前記アパーチャが、第1波長を有する放射を抑制し、かつ第2波長を有する放射の少なくとも一部分が該アパーチャを透過することができるように配置され、前記放射の第2波長は、前記放射の第1波長よりも短く、
前記材料体が、モリブデンまたはタングステンから形成され、前記材料体が、該材料体全体としての再結晶温度を高めるために複数のナノ粒子をさらに備える、
スペクトル純度フィルタ。 - 前記ナノ粒子が、Al 2O3、HfO2、ZrO2、Y2O3、MgO、La2O3、Ce2O3、SrOおよびHfCのうちの1つ以上から成る、請求項6に記載のスペクトル純度フィルタ。
- 前記ナノ粒子が、前記材料体内で複数の層に分散される、請求項6または7に記載のスペクトル純度フィルタ。
- 前記モリブデンが、タングステン‐モリブデン合金またはモリブデン‐レニウム合金またはタングステン‐モリブデン‐レニウム合金の一部を形成し、あるいは、前記タングステンが、タングステン‐モリブデン合金またはタングステン‐レニウム合金またはタングステン‐モリブデン‐レニウム合金の一部を形成する、請求項6〜8のいずれかに記載のスペクトル純度フィルタ。
- 前記合金中のレニウムの含有量が、原子百分率で、
前記モリブデン‐レニウム合金に対して、約0.1%〜約49%、
前記タングステン‐レニウム合金に対して、約0.1%〜約27%、
前記タングステン‐モリブデン‐レニウム合金に対して、約0.1〜約49%である、
請求項9に記載のスペクトル純度フィルタ。 - 前記材料体のうち前記アパーチャが貫通している面が、実質的に純粋なモリブデンまたはタングステンから形成される領域または層から成るか、あるいは該領域または層が設けられる、請求項1〜10のいずれかに記載のスペクトル純度フィルタ。
- 前記面が、使用中、前記第1波長および/または前記第2波長を含む入射放射に対向するように構成される、請求項11に記載のスペクトル純度フィルタ。
- 前記放射の第2波長が、電磁スペクトルのEUV部内の波長を有する放射と実質的に同等か、または、それよりも短い波長を有する、かつ/あるいは、前記第2波長が5nm〜20nmの範囲内である、請求項1〜12のいずれかに記載のスペクトル純度フィルタ。
- 前記第2波長が、13nm〜14nmの範囲にある、請求項13に記載のスペクトル純度フィルタ。
- 請求項1〜14のいずれかに記載のスペクトル純度フィルタを有する、リソグラフィ装置または放射源。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US30411510P | 2010-02-12 | 2010-02-12 | |
US61/304,115 | 2010-02-12 | ||
PCT/EP2010/069197 WO2011098170A1 (en) | 2010-02-12 | 2010-12-08 | Spectral purity filter |
Publications (2)
Publication Number | Publication Date |
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JP2013519998A JP2013519998A (ja) | 2013-05-30 |
JP5717765B2 true JP5717765B2 (ja) | 2015-05-13 |
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JP2012552276A Active JP5717765B2 (ja) | 2010-02-12 | 2010-12-08 | スペクトル純度フィルタ |
Country Status (8)
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---|---|
US (1) | US9007565B2 (ja) |
EP (1) | EP2534537B1 (ja) |
JP (1) | JP5717765B2 (ja) |
KR (1) | KR101797052B1 (ja) |
CN (1) | CN102725697B (ja) |
SG (1) | SG182568A1 (ja) |
TW (1) | TWI510821B (ja) |
WO (1) | WO2011098170A1 (ja) |
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SG184557A1 (en) | 2010-04-27 | 2012-11-29 | Asml Netherlands Bv | Spectral purity filter |
US9395630B2 (en) * | 2010-06-25 | 2016-07-19 | Asml Netherlands B.V. | Lithographic apparatus and method |
WO2012004070A1 (en) * | 2010-07-06 | 2012-01-12 | Asml Netherlands B.V. | Components for euv lithographic apparatus, euv lithographic apparatus including such components and method for manufacturing such components |
TWI596384B (zh) * | 2012-01-18 | 2017-08-21 | Asml荷蘭公司 | 光源收集器元件、微影裝置及元件製造方法 |
US9265573B2 (en) | 2012-07-19 | 2016-02-23 | Covidien Lp | Ablation needle including fiber Bragg grating |
US10228615B2 (en) * | 2014-07-04 | 2019-03-12 | Asml Netherlands B.V. | Membranes for use within a lithographic apparatus and a lithographic apparatus comprising such a membrane |
NL2023932B1 (en) | 2018-10-15 | 2020-08-19 | Asml Netherlands Bv | Method of manufacturing a membrane assembly |
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JP3277226B2 (ja) * | 1992-07-03 | 2002-04-22 | 株式会社アライドマテリアル | X線管用回転陽極及びその製造方法 |
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JP2003293070A (ja) * | 2002-03-29 | 2003-10-15 | Japan Science & Technology Corp | 高強度・高靭性Mo合金加工材とその製造方法 |
JP2004317693A (ja) * | 2003-04-15 | 2004-11-11 | Mitsubishi Electric Corp | 波長フィルタ、露光装置および撮像装置 |
US7453645B2 (en) * | 2004-12-30 | 2008-11-18 | Asml Netherlands B.V. | Spectral purity filter, lithographic apparatus including such a spectral purity filter, device manufacturing method, and device manufactured thereby |
US7372623B2 (en) | 2005-03-29 | 2008-05-13 | Asml Netherlands B.V. | Multi-layer spectral purity filter, lithographic apparatus including such a spectral purity filter, device manufacturing method, and device manufactured thereby |
DE102005020521B4 (de) * | 2005-04-29 | 2013-05-02 | Xtreme Technologies Gmbh | Verfahren und Anordnung zur Unterdrückung von Debris bei der Erzeugung kurzwelliger Strahlung auf Basis eines Plasmas |
US20070170379A1 (en) * | 2006-01-24 | 2007-07-26 | Nikon Corporation | Cooled optical filters and optical systems comprising same |
US7453071B2 (en) * | 2006-03-29 | 2008-11-18 | Asml Netherlands B.V. | Contamination barrier and lithographic apparatus comprising same |
WO2008053881A1 (fr) | 2006-11-01 | 2008-05-08 | Nikon Corporation | Plaque de gradateur, appareil d'exposition, procédé d'exposition et procédé de fabrication du dispositif |
US8536551B2 (en) * | 2008-06-12 | 2013-09-17 | Gigaphoton Inc. | Extreme ultra violet light source apparatus |
EP2326990B1 (en) * | 2008-07-11 | 2013-03-13 | ASML Netherlands BV | Spectral purity filter, radiation source, lithographic apparatus, and device manufacturing method |
KR101607228B1 (ko) | 2008-08-14 | 2016-03-29 | 에이에스엠엘 네델란즈 비.브이. | 방사선 소스, 리소그래피 장치 및 디바이스 제조 방법 |
SG184557A1 (en) * | 2010-04-27 | 2012-11-29 | Asml Netherlands Bv | Spectral purity filter |
WO2012004070A1 (en) * | 2010-07-06 | 2012-01-12 | Asml Netherlands B.V. | Components for euv lithographic apparatus, euv lithographic apparatus including such components and method for manufacturing such components |
-
2010
- 2010-12-08 JP JP2012552276A patent/JP5717765B2/ja active Active
- 2010-12-08 CN CN201080062731.9A patent/CN102725697B/zh active Active
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- 2010-12-08 SG SG2012052643A patent/SG182568A1/en unknown
- 2010-12-08 EP EP10788073.4A patent/EP2534537B1/en active Active
- 2010-12-08 US US13/578,468 patent/US9007565B2/en active Active
- 2010-12-08 WO PCT/EP2010/069197 patent/WO2011098170A1/en active Application Filing
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Publication number | Publication date |
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SG182568A1 (en) | 2012-08-30 |
EP2534537A1 (en) | 2012-12-19 |
TW201142372A (en) | 2011-12-01 |
CN102725697B (zh) | 2015-08-05 |
EP2534537B1 (en) | 2016-05-04 |
TWI510821B (zh) | 2015-12-01 |
US9007565B2 (en) | 2015-04-14 |
CN102725697A (zh) | 2012-10-10 |
KR101797052B1 (ko) | 2017-11-13 |
US20120307224A1 (en) | 2012-12-06 |
JP2013519998A (ja) | 2013-05-30 |
KR20130009773A (ko) | 2013-01-23 |
WO2011098170A1 (en) | 2011-08-18 |
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