JP5883799B2 - 高効率電源回路のための電子デバイスおよび部品 - Google Patents

高効率電源回路のための電子デバイスおよび部品 Download PDF

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JP5883799B2
JP5883799B2 JP2012548187A JP2012548187A JP5883799B2 JP 5883799 B2 JP5883799 B2 JP 5883799B2 JP 2012548187 A JP2012548187 A JP 2012548187A JP 2012548187 A JP2012548187 A JP 2012548187A JP 5883799 B2 JP5883799 B2 JP 5883799B2
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iii
transistor
mode transistor
insulating
electronic component
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JP2013516795A (ja
JP2013516795A5 (enExample
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ウー，イーフェン
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トランスフォーム インコーポレーテッド
トランスフォーム インコーポレーテッド
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
JP2012548187A 2010-01-08 2011-01-07 高効率電源回路のための電子デバイスおよび部品 Active JP5883799B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/684,838 US8816497B2 (en) 2010-01-08 2010-01-08 Electronic devices and components for high efficiency power circuits
US12/684,838 2010-01-08
PCT/US2011/020592 WO2011085260A2 (en) 2010-01-08 2011-01-07 Electronic devices and components for high efficiency power circuits

Publications (3)

Publication Number Publication Date
JP2013516795A JP2013516795A (ja) 2013-05-13
JP2013516795A5 JP2013516795A5 (enExample) 2014-02-20
JP5883799B2 true JP5883799B2 (ja) 2016-03-15

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JP2012548187A Active JP5883799B2 (ja) 2010-01-08 2011-01-07 高効率電源回路のための電子デバイスおよび部品

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US (2) US8816497B2 (enExample)
EP (1) EP2522030A4 (enExample)
JP (1) JP5883799B2 (enExample)
CN (1) CN102696106B (enExample)
TW (1) TWI545721B (enExample)
WO (1) WO2011085260A2 (enExample)

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US9401341B2 (en) 2016-07-26
CN102696106B (zh) 2015-09-02
WO2011085260A2 (en) 2011-07-14
TWI545721B (zh) 2016-08-11
EP2522030A2 (en) 2012-11-14
US8816497B2 (en) 2014-08-26
EP2522030A4 (en) 2015-03-18
US20140329358A1 (en) 2014-11-06
WO2011085260A3 (en) 2011-11-10
CN102696106A (zh) 2012-09-26

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