JP6867778B2 - 整流ic及びこれを用いた絶縁型スイッチング電源 - Google Patents
整流ic及びこれを用いた絶縁型スイッチング電源 Download PDFInfo
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- JP6867778B2 JP6867778B2 JP2016210962A JP2016210962A JP6867778B2 JP 6867778 B2 JP6867778 B2 JP 6867778B2 JP 2016210962 A JP2016210962 A JP 2016210962A JP 2016210962 A JP2016210962 A JP 2016210962A JP 6867778 B2 JP6867778 B2 JP 6867778B2
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- 238000001514 detection method Methods 0.000 claims description 14
- 238000009499 grossing Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 10
- 230000017525 heat dissipation Effects 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 8
- 238000002955 isolation Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 5
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- 238000010586 diagram Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 101100489713 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GND1 gene Proteins 0.000 description 5
- 101100489717 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GND2 gene Proteins 0.000 description 5
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- 238000006243 chemical reaction Methods 0.000 description 5
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
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- H—ELECTRICITY
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- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
- H02M3/33576—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer
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- H01L23/495—Lead-frames or other flat leads
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- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
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- H01L23/49575—Assemblies of semiconductor devices on lead frames
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- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
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- H02M1/00—Details of apparatus for conversion
- H02M1/14—Arrangements for reducing ripples from dc input or output
- H02M1/143—Arrangements for reducing ripples from dc input or output using compensating arrangements
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- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
- H02M3/33576—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer
- H02M3/33592—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer having a synchronous rectifier circuit or a synchronous freewheeling circuit at the secondary side of an isolation transformer
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- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
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- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
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- H02M3/33523—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters with galvanic isolation between input and output of both the power stage and the feedback loop
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Description
図1は、絶縁型スイッチング電源の全体構成を示すブロック図である。本図の絶縁型スイッチング電源1は、一次回路系1p(GND1系)と二次回路系1s(GND2系)との間を電気的に絶縁しつつ入力電圧Viから出力電圧Voを生成して負荷Zに供給するフライバック方式のDC/DCコンバータであり、トランス10と、電源制御IC20と、整流IC30と、平滑キャパシタ40と、出力帰還部50と、を有する。
引き続き、図1を参照しながら、整流IC30の構成及び動作について説明する。本構成例の整流IC30は、トランジスタチップ31と、コントローラチップ32と、を単一のパッケージに封止して成るマルチチップ型の半導体集積回路装置である。
図2及び図3は、それぞれ、トランジスタチップ31の平面図及びα−α’断面図である。トランジスタチップ31(例えば3mm×3mm、スクライブ幅90μmを含む)に集積化された整流トランジスタは、縦型NDMOSFETであり、その表面側には、図2で示すように、2つのソースパッド31S(例えば2400μm×900μm)と1つのゲートパッド31G(例えば480μm×320μm)が形成されている。なお、ソースパッド31S及びゲートパッド31Gそれぞれの個数、サイズ、及び、配置レイアウトについては、整流トランジスタの電流能力や製造プロセスルールなどに応じて適宜調整することが可能である。
図4は、整流IC30におけるリードフレームのパターン図(TO220パッケージの採用例)である。本図で示したように、整流IC30は、リードフレームA1〜A3を有する。リードフレームA1〜A3は、それぞれ、外部端子T1〜T3として、パッケージの一端面から一方向に延出されている。なお、整流IC30に追加機能を付与する場合には、図中の破線で示したように、リードフレームを増設することも可能である。
図5は、リードフレームA1にコントローラチップ32をマウントするときの工程図であり、紙面の左側から右側に向けて、順次マウント工程が進められていく。
なお、整流IC30のパッケージとしては、挿入実装型パッケージ(ZIPパッケージ[zigzag in-line package]、SIPパッケージ[single line package]、若しくは、TOパッケージ[transistor outline package]など)を用いてもよいし、表面実装型パッケージ(SONパッケージ[small outline non-leaded package]、または、QFNパッケージ[quad flat non-leaded package]など)を用いてもよい。
本明細書中に開示されている種々の技術的特徴は、上記実施形態のほか、その技術的創作の主旨を逸脱しない範囲で種々の変更を加えることが可能である。すなわち、上記実施形態は、全ての点で例示であって制限的なものではないと考えられるべきであり、本発明の技術的範囲は、上記実施形態の説明ではなく、特許請求の範囲によって示されるものであり、特許請求の範囲と均等の意味及び範囲内に属する全ての変更が含まれると理解されるべきである。
1p 一次回路系(GND1系)
1s 二次回路系(GND2系)
10 トランス
11 一次巻線
12 二次巻線
20 電源制御IC
21 出力トランジスタ
30 整流IC
31 トランジスタチップ(整流トランジスタ)
31S ソースパッド
31G ゲートパッド
31a セル部
31b 中間絶縁層
31c メタル層
31d 保護層
31e ドレイン電極
31e1 Ti層
31e2 Ni層
31e3 Au層
31e4 Ag層
32 コントローラチップ
32S ソース電圧検出パッド
32D ドレイン電圧検出パッド
32G ゲート制御パッド
32V 電源パッド
33 絶縁部材
40 平滑キャパシタ
50 出力帰還部
T1〜T3 外部端子
A1〜A3 リードフレーム
A1x ワイヤボンディング領域
A1y 隔離溝
W1〜W5 ワイヤ
B1 絶縁性ペースト
B2 セラミック絶縁基板
B3 導電性ペースト
X ZIPパッケージ
X1 リードピン
X2 放熱パッド
Y SONパッケージ
Y1 電極パッド
Y2 放熱パッド
Claims (14)
- トランジスタを集積化したトランジスタチップと、前記トランジスタの第1ノード電圧と第2ノード電圧をそれぞれ検出して前記トランジスタのオン/オフ制御を行うコントローラチップと、を単一のパッケージに封止して成り、絶縁型スイッチング電源の二次側整流手段として機能する整流ICであって、
前記トランジスタチップは、外部端子として前記パッケージの一端面から延出されている第1リードフレームにダイボンディングされており、
前記コントローラチップは、絶縁部材を介して前記第1リードフレーム上にマウントされており、
前記第1リードフレームには、前記絶縁部材とワイヤボンディング領域との間を隔てる隔離溝が形成されており、
前記パッケージの平面視において、前記一端面と平行する第1方向から見ると、前記トランジスタチップと前記コントローラチップが互いに重なり合っており、前記第1方向と直交する第2方向から見ると、前記コントローラチップと前記隔離溝が互いに重なり合っている、整流IC。 - 前記コントローラチップは、前記第1ノード電圧が前記第2ノード電圧よりも低いときに前記トランジスタをオンし、前記第1ノード電圧が前記第2ノード電圧よりも高いときに前記トランジスタをオフする、請求項1に記載の整流IC。
- 前記トランジスタは、縦型NDMOSFET[N-channel type double-diffused metal oxide semiconductor field effect transistor]である、請求項1または2に記載の整流IC。
- 前記トランジスタチップのソースパッドと第2リードフレームとの間、前記コントローラチップのソース電圧検出パッドと前記第2リードフレームとの間、前記コントローラチップのドレイン電圧検出パッドと前記第1リードフレームとの間、前記コントローラチップのゲート制御パッドと前記トランジスタチップのゲートパッドとの間、並びに、前記コントローラチップの電源パッドと第3リードフレームとの間には、それぞれ、1本または複数本のワイヤが敷設されている、請求項1〜3のいずれか一項に記載の整流IC。
- 前記ドレイン電圧検出パッドと前記第1リードフレームとの間に敷設された第1ワイヤは、前記ゲート制御パッドと前記ゲートパッドとの間に敷設された第2ワイヤよりも長い、請求項4に記載の整流IC。
- 前記ドレイン電圧検出パッドと前記第1リードフレームとの間に敷設された第1ワイヤ、前記ソース電圧検出パッドと前記第2リードフレームとの間に敷設された第2ワイヤ、前記電源パッドと前記第3リードフレームとの間に敷設された第3ワイヤ、前記ゲート制御パッドと前記ゲートパッドとの間に敷設された第4ワイヤ、並びに、前記ソースパッドと前記第2リードフレームとの間に敷設された第5ワイヤは、それぞれ、異なる方向に延出されている、請求項4に記載の整流IC。
- 前記第2ワイヤと前記第3ワイヤは、前記第1方向と交差する方向に延出されている、請求項6に記載の整流IC。
- 前記第1リードフレームは、前記パッケージの平面視において前記一端面から前記第2方向に沿って前記パッケージの内向きに伸びてから前記第1方向に向けて屈曲する部位の内側の角に第1湾曲部を有し、前記第2リードフレームは、前記第1リードフレームに隣接して前記一端面から延出されており、かつ、前記パッケージの平面視において前記第2方向に沿って前記パッケージの内向きに伸びてから前記第1方向に向けて屈曲する部位の外側の角に前記第1湾曲部と対向する第2湾曲部を有し、前記第2湾曲部の曲率は、前記第1湾曲部の曲率よりも小さい、請求項4〜7のいずれか一項に記載の整流IC。
- 前記第2方向から見ると、前記コントローラチップと前記第3リードフレームは、重なり合っていない、請求項4〜8のいずれか一項に記載の整流IC。
- 前記第1リードフレームには、前記トランジスタチップのドレイン電極がダイボンディングされており、前記第2リードフレームには、前記トランジスタチップのソースパッドと前記コントローラチップのソース電圧検出パッドがそれぞれワイヤボンディングされており、前記第3リードフレームには、前記コントローラチップの電源パッドがワイヤボンディングされている、請求項4〜9のいずれか一項に記載の整流IC。
- 前記絶縁部材は、絶縁性ペーストで前記第1リードフレームに貼付されている、請求項1〜10のいずれか一項に記載の整流IC。
- 前記絶縁部材は、セラミック絶縁基板である、請求項1〜11のいずれか一項に記載の整流IC。
- 前記第1リードフレームは、少なくともその一部が放熱パッドとして露出されている、請求項1〜12のいずれか一項に記載の整流IC。
- 入力電圧が印加されるトランスと、
帰還信号に応じて前記トランスの一次側電流を制御する制御部と、
前記トランスの二次側電圧を整流平滑して出力電圧を生成する整流平滑部と、
前記出力電圧に応じて前記帰還信号を生成する出力帰還部と、
を有し、
前記整流平滑部は、二次側整流手段として、請求項1〜13のいずれか一項に記載の整流ICを含む、絶縁型スイッチング電源。
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