JP5883699B2 - プログラマブルｌｓｉ - Google Patents

プログラマブルｌｓｉ Download PDF

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Publication number
JP5883699B2
JP5883699B2 JP2012075636A JP2012075636A JP5883699B2 JP 5883699 B2 JP5883699 B2 JP 5883699B2 JP 2012075636 A JP2012075636 A JP 2012075636A JP 2012075636 A JP2012075636 A JP 2012075636A JP 5883699 B2 JP5883699 B2 JP 5883699B2
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Japan
Prior art keywords
circuit
memory
transistor
data
memory cell
Prior art date
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Expired - Fee Related
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JP2012075636A
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Japanese (ja)
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JP2012231455A (ja
JP2012231455A5 (enExample
Inventor
英智 小林
英智 小林
正己 遠藤
正己 遠藤
塩野入　豊
豊 塩野入
洋樹 傳保
洋樹 傳保
辰司 西島
辰司 西島
和晃 大嶋
和晃 大嶋
誠一 米田
誠一 米田
小山　潤
潤 小山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2012075636A priority Critical patent/JP5883699B2/ja
Publication of JP2012231455A publication Critical patent/JP2012231455A/ja
Publication of JP2012231455A5 publication Critical patent/JP2012231455A5/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • H03K19/1778—Structural details for adapting physical parameters
    • H03K19/17796—Structural details for adapting physical parameters for physical disposition of blocks
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Computing Systems (AREA)
  • Computer Hardware Design (AREA)
  • Logic Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2012075636A 2011-04-13 2012-03-29 プログラマブルｌｓｉ Expired - Fee Related JP5883699B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012075636A JP5883699B2 (ja) 2011-04-13 2012-03-29 プログラマブルｌｓｉ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011088976 2011-04-13
JP2011088976 2011-04-13
JP2012075636A JP5883699B2 (ja) 2011-04-13 2012-03-29 プログラマブルｌｓｉ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016018622A Division JP6068766B2 (ja) 2011-04-13 2016-02-03 プログラマブルｌｓｉ

Publications (3)

Publication Number Publication Date
JP2012231455A JP2012231455A (ja) 2012-11-22
JP2012231455A5 JP2012231455A5 (enExample) 2015-02-19
JP5883699B2 true JP5883699B2 (ja) 2016-03-15

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JP2012075636A Expired - Fee Related JP5883699B2 (ja) 2011-04-13 2012-03-29 プログラマブルｌｓｉ
JP2016018622A Expired - Fee Related JP6068766B2 (ja) 2011-04-13 2016-02-03 プログラマブルｌｓｉ

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Country Status (5)

Country Link
US (1) US8570065B2 (enExample)
JP (2) JP5883699B2 (enExample)
KR (1) KR101922730B1 (enExample)
CN (1) CN102739236B (enExample)
TW (1) TWI562155B (enExample)

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KR102125593B1 (ko) * 2013-02-13 2020-06-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그래머블 로직 디바이스 및 반도체 장치
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JP6478562B2 (ja) 2013-11-07 2019-03-06 株式会社半導体エネルギー研究所 半導体装置
KR102253204B1 (ko) 2014-02-07 2021-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 장치
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JP2015165226A (ja) 2014-02-07 2015-09-17 株式会社半導体エネルギー研究所 装置
JP6545970B2 (ja) 2014-02-07 2019-07-17 株式会社半導体エネルギー研究所 装置
JP6231406B2 (ja) * 2014-02-28 2017-11-15 株式会社日立製作所 リングオシレータ、センサ、リングオシレータの制御方法、測定方法、プログラム及び記録媒体
KR102267237B1 (ko) * 2014-03-07 2021-06-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
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