JP5813495B2 - 液処理方法、液処理装置および記憶媒体 - Google Patents

液処理方法、液処理装置および記憶媒体 Download PDF

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Publication number
JP5813495B2
JP5813495B2 JP2011277159A JP2011277159A JP5813495B2 JP 5813495 B2 JP5813495 B2 JP 5813495B2 JP 2011277159 A JP2011277159 A JP 2011277159A JP 2011277159 A JP2011277159 A JP 2011277159A JP 5813495 B2 JP5813495 B2 JP 5813495B2
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liquid
chemical
diw
organic solvent
substrate
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Japanese (ja)
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JP2012231116A5 (enExample
JP2012231116A (ja
Inventor
口 賢 治 関
口 賢 治 関
井 康 藤
井 康 藤
哲 也 坂▲崎▼
哲 也 坂▲崎▼
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2011277159A priority Critical patent/JP5813495B2/ja
Priority to TW101113226A priority patent/TWI524453B/zh
Priority to US13/446,255 priority patent/US9111967B2/en
Priority to KR1020120038520A priority patent/KR101678248B1/ko
Publication of JP2012231116A publication Critical patent/JP2012231116A/ja
Publication of JP2012231116A5 publication Critical patent/JP2012231116A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate

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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2011277159A 2011-04-15 2011-12-19 液処理方法、液処理装置および記憶媒体 Active JP5813495B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011277159A JP5813495B2 (ja) 2011-04-15 2011-12-19 液処理方法、液処理装置および記憶媒体
TW101113226A TWI524453B (zh) 2011-04-15 2012-04-13 液體處理方法、液體處理裝置及記憶媒體
US13/446,255 US9111967B2 (en) 2011-04-15 2012-04-13 Liquid processing method, liquid processing apparatus and storage medium
KR1020120038520A KR101678248B1 (ko) 2011-04-15 2012-04-13 액 처리 방법, 액 처리 장치 및 기억 매체

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011091295 2011-04-15
JP2011091295 2011-04-15
JP2011277159A JP5813495B2 (ja) 2011-04-15 2011-12-19 液処理方法、液処理装置および記憶媒体

Publications (3)

Publication Number Publication Date
JP2012231116A JP2012231116A (ja) 2012-11-22
JP2012231116A5 JP2012231116A5 (enExample) 2014-04-10
JP5813495B2 true JP5813495B2 (ja) 2015-11-17

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Country Status (4)

Country Link
US (1) US9111967B2 (enExample)
JP (1) JP5813495B2 (enExample)
KR (1) KR101678248B1 (enExample)
TW (1) TWI524453B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9997365B2 (en) 2016-06-14 2018-06-12 Tokyo Electron Limited Method of manufacturing semiconductor device, heat treatment apparatus, and storage medium

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JP5783971B2 (ja) * 2012-08-10 2015-09-24 株式会社東芝 塗布装置および塗布方法
US9870933B2 (en) * 2013-02-08 2018-01-16 Lam Research Ag Process and apparatus for treating surfaces of wafer-shaped articles
KR20150000548A (ko) * 2013-06-24 2015-01-05 삼성전자주식회사 기판 처리 장치
JP6308910B2 (ja) * 2013-11-13 2018-04-11 東京エレクトロン株式会社 基板洗浄方法、基板洗浄システムおよび記憶媒体
TWI539515B (zh) * 2013-11-13 2016-06-21 弘塑科技股份有限公司 晶片堆疊結構之洗淨方法及洗淨設備
CN104979236B (zh) * 2014-04-11 2017-09-26 沈阳芯源微电子设备有限公司 一种化学液供给装置及其供给方法
KR102347975B1 (ko) * 2014-07-14 2022-01-07 세메스 주식회사 기판 처리 장치 및 방법
JP6449097B2 (ja) 2014-07-24 2019-01-09 東京エレクトロン株式会社 基板処理方法及び基板処理装置並びに基板処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
JP6440111B2 (ja) * 2014-08-14 2018-12-19 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
CN105047529A (zh) * 2015-05-28 2015-11-11 上海集成电路研发中心有限公司 改善小尺寸高深宽比结构的湿法工艺润湿性的方法
KR101736871B1 (ko) 2015-05-29 2017-05-18 세메스 주식회사 기판 처리 장치 및 방법
JP6552931B2 (ja) * 2015-09-18 2019-07-31 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2017157800A (ja) * 2016-03-04 2017-09-07 東京エレクトロン株式会社 液処理方法、基板処理装置、及び記憶媒体
EP3282474B1 (en) * 2016-08-11 2021-08-04 IMEC vzw Method for performing a wet treatment of a substrate
JP6690717B2 (ja) * 2016-08-22 2020-04-28 東京エレクトロン株式会社 塗布方法、塗布装置及び記憶媒体
JP6979826B2 (ja) * 2017-08-04 2021-12-15 東京エレクトロン株式会社 基板処理方法および基板処理装置
KR102029127B1 (ko) * 2019-02-08 2019-10-07 영창케미칼 주식회사 반도체 제조 공정에 있어서 실리콘 또는 실리콘 화합물 패턴을 형성하기 위한 신규 방법
JP7250566B2 (ja) * 2019-02-26 2023-04-03 東京エレクトロン株式会社 基板処理装置および基板処理方法
TW202105495A (zh) * 2019-05-23 2021-02-01 日商東京威力科創股份有限公司 基板處理方法
JP7419896B2 (ja) * 2020-03-16 2024-01-23 栗田工業株式会社 ウエハの洗浄方法
JP7513454B2 (ja) 2020-07-27 2024-07-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7580217B2 (ja) 2020-07-27 2024-11-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、基板処理装置、および、処理液
JP7546399B2 (ja) 2020-07-27 2024-09-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、基板処理装置および処理液
CN112185857A (zh) * 2020-09-29 2021-01-05 王健 一种晶圆电镀前处理用摇摆喷淋工艺
KR102597005B1 (ko) * 2020-12-29 2023-11-02 세메스 주식회사 기판 처리 방법
JP7592500B2 (ja) * 2021-01-18 2024-12-02 東京エレクトロン株式会社 基板処理方法および基板処理装置
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CN118073176B (zh) * 2024-04-25 2024-07-09 合肥新晶集成电路有限公司 晶圆清洗方法和晶圆清洗机

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9997365B2 (en) 2016-06-14 2018-06-12 Tokyo Electron Limited Method of manufacturing semiconductor device, heat treatment apparatus, and storage medium

Also Published As

Publication number Publication date
TW201306151A (zh) 2013-02-01
US9111967B2 (en) 2015-08-18
TWI524453B (zh) 2016-03-01
US20120260949A1 (en) 2012-10-18
KR20120117678A (ko) 2012-10-24
JP2012231116A (ja) 2012-11-22
KR101678248B1 (ko) 2016-11-21

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