JP5807044B2 - 複数の窒化物ナノワイヤの製造方法 - Google Patents
複数の窒化物ナノワイヤの製造方法 Download PDFInfo
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- JP5807044B2 JP5807044B2 JP2013168662A JP2013168662A JP5807044B2 JP 5807044 B2 JP5807044 B2 JP 5807044B2 JP 2013168662 A JP2013168662 A JP 2013168662A JP 2013168662 A JP2013168662 A JP 2013168662A JP 5807044 B2 JP5807044 B2 JP 5807044B2
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- 239000002070 nanowire Substances 0.000 title claims description 131
- 150000004767 nitrides Chemical class 0.000 title claims description 28
- 238000004519 manufacturing process Methods 0.000 title description 9
- 230000012010 growth Effects 0.000 claims description 101
- 238000000034 method Methods 0.000 claims description 80
- 239000004065 semiconductor Substances 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 16
- 238000000609 electron-beam lithography Methods 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 7
- 125000002524 organometallic group Chemical group 0.000 claims description 3
- 238000001127 nanoimprint lithography Methods 0.000 claims description 2
- 238000000206 photolithography Methods 0.000 claims description 2
- 238000003631 wet chemical etching Methods 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- 230000003698 anagen phase Effects 0.000 description 22
- 239000013078 crystal Substances 0.000 description 20
- 238000001878 scanning electron micrograph Methods 0.000 description 10
- 239000012071 phase Substances 0.000 description 8
- 239000002243 precursor Substances 0.000 description 8
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 8
- 230000007547 defect Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 229910004205 SiNX Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
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- RHUYHJGZWVXEHW-UHFFFAOYSA-N 1,1-Dimethyhydrazine Chemical compound CN(C)N RHUYHJGZWVXEHW-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000011258 core-shell material Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- DFORUGDYJZMRDQ-UHFFFAOYSA-N 1,1,2,2-tetrabutylhydrazine Chemical compound CCCCN(CCCC)N(CCCC)CCCC DFORUGDYJZMRDQ-UHFFFAOYSA-N 0.000 description 1
- TUBQDCKAWGHZPF-UHFFFAOYSA-N 1,3-benzothiazol-2-ylsulfanylmethyl thiocyanate Chemical compound C1=CC=C2SC(SCSC#N)=NC2=C1 TUBQDCKAWGHZPF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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Description
報告された業績は、この技術の素晴らしい潜在能力を示すが、積層欠陥や転位などの結晶欠陥なしにエピタキシャルで垂直方向に直立するGaN膜ナノワイヤを製造する方法を提供するために、および、工業的製造までスケールアップするためによく適合した方法を提供するために、改良が必要である。
a)基板105上に成長マスク111を提供する。基板は、例えば、GaNであり、成長マスクはSiNxまたはSiOxなどである。
b)成長マスク中に複数の開口部113を生成する。複数の開口部は、好ましくは、開口部直径と開口部の相対的な位置の両方に対してよく制御されている。この手順に対して、当技術分野で知られている電子線リソグラフィー(EBL)、ナノインプリントリゾグラフィ、光学リソグラフィー、および反応イオンエッチング(RIE)または湿式化学的エッチング方法を含むいくつかの技術は、限定無しに利用することができる。好ましくは、複数の開口部の直径は100nmであり、0.5〜5μmのピッチ間隔を有する。複数の開口部は、生成するナノワイヤ105の位置と直径とを画定する。
c)CVD(化学蒸着法)によるナノワイヤの成長は、プレカーサ源流量が連続して存在しているプロセスに基づいている。プレカーサ源流量は、成長ゾーン中で低い過飽和度を達成するように調整されている。V/III比は、1〜100の範囲、好ましくは、1〜50の範囲、さらに好ましくは、5〜50の範囲である。このV/III比は、膜成長のために使用されるV/III比よりかなり低いものであることに注意すべきである。
Claims (2)
- 選択領域を成長させる技術をベースとする化学蒸着法(CVD)を利用して複数の窒化物系半導体のナノワイヤを成長させる方法であって、
ナノワイヤ成長工程中、窒素源と有機金属源とが存在し、
前記方法は、
基板の表面上にマスクを形成する工程と、
前記マスク中に少なくとも1つの開口部を形成して前記基板の前記表面を曝す工程と、
前記少なくとも1つの開口部の中の前記曝された基板表面の上に窒化物系半導体のナノワイヤを直接成長させる工程と、
を含み、
前記窒化物系半導体のナノワイヤは、窒化ガリウムを含み、
前記ナノワイヤは、成長して前記マスクの上面の上に突き出し、
前記ナノワイヤ成長工程中、前記窒素源が連続して流れていることを特徴とする方法。 - 前記少なくとも1つの開口部は、電子線リソグラフィ、ナノインプリントリソグラフィまたは光学リソグラフィと、反応性イオンエッチングまたは湿式化学的エッチングとによって形成されることを特徴とする請求項1に記載の方法。
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US20100163840A1 (en) | 2010-07-01 |
KR20090101960A (ko) | 2009-09-29 |
AU2008203934B2 (en) | 2013-11-07 |
AU2008203934A1 (en) | 2008-07-17 |
EP2102899B1 (en) | 2020-11-11 |
CN101681813B (zh) | 2012-07-11 |
US20140061586A1 (en) | 2014-03-06 |
JP2014001135A (ja) | 2014-01-09 |
EP2102899A1 (en) | 2009-09-23 |
US9947831B2 (en) | 2018-04-17 |
US9024338B2 (en) | 2015-05-05 |
US20110143472A1 (en) | 2011-06-16 |
US20170229613A1 (en) | 2017-08-10 |
JP5345552B2 (ja) | 2013-11-20 |
AU2008203934C1 (en) | 2014-03-13 |
US9660136B2 (en) | 2017-05-23 |
KR20150052343A (ko) | 2015-05-13 |
CA2674448A1 (en) | 2008-07-17 |
AU2008203934A2 (en) | 2009-09-03 |
US20130072001A1 (en) | 2013-03-21 |
US8664094B2 (en) | 2014-03-04 |
JP2010515651A (ja) | 2010-05-13 |
CN101681813A (zh) | 2010-03-24 |
HK1142717A1 (en) | 2010-12-10 |
US8309439B2 (en) | 2012-11-13 |
EP2102899A4 (en) | 2015-04-01 |
US20150221817A1 (en) | 2015-08-06 |
KR101549270B1 (ko) | 2015-09-01 |
WO2008085129A1 (en) | 2008-07-17 |
US7829443B2 (en) | 2010-11-09 |
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