FR3096834B1 - Dispositif optoelectronique comportant une diode electroluminescente ayant une couche limitant les courants de fuite - Google Patents

Dispositif optoelectronique comportant une diode electroluminescente ayant une couche limitant les courants de fuite Download PDF

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Publication number
FR3096834B1
FR3096834B1 FR1905638A FR1905638A FR3096834B1 FR 3096834 B1 FR3096834 B1 FR 3096834B1 FR 1905638 A FR1905638 A FR 1905638A FR 1905638 A FR1905638 A FR 1905638A FR 3096834 B1 FR3096834 B1 FR 3096834B1
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FR
France
Prior art keywords
emitting diode
optoelectronic device
light emitting
leakage current
current limiting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1905638A
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English (en)
Other versions
FR3096834A1 (fr
Inventor
Florian Dupont
Jérôme Napierala
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aledia
Original Assignee
Aledia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aledia filed Critical Aledia
Priority to FR1905638A priority Critical patent/FR3096834B1/fr
Priority to US17/613,699 priority patent/US12002841B2/en
Priority to PCT/FR2020/050902 priority patent/WO2020240140A1/fr
Priority to EP20737521.3A priority patent/EP3977512A1/fr
Publication of FR3096834A1 publication Critical patent/FR3096834A1/fr
Application granted granted Critical
Publication of FR3096834B1 publication Critical patent/FR3096834B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)

Abstract

Dispositif optoélectronique (10) comportant un substrat (101) délimitant une face support (101a), au moins une diode électroluminescente (11) comportant une première portion semiconductrice (112) dopée de forme globalement filaire suivant un axe longitudinal (11b) et ayant des surfaces latérales (112b) parallèles à l’axe longitudinal (11b), la portion active (111) étant agencée sur une extrémité sommitale (11a) de la première portion semiconductrice (112), une deuxième portion semiconductrice (113) dopée selon un deuxième type de dopage et agencée, au moins en partie, sur tout ou partie de la portion active (111), une couche résistive électriquement (114), dont la résistance électrique est supérieure à celle de la portion active (111), recouvrant au moins tout ou partie des surfaces latérales (112b) de la première portion semiconductrice (112) et tout ou partie de la surface de l’extrémité sommitale (11a) de la première portion semiconductrice (112) non recouverte par la portion active (111).
FR1905638A 2019-05-28 2019-05-28 Dispositif optoelectronique comportant une diode electroluminescente ayant une couche limitant les courants de fuite Active FR3096834B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1905638A FR3096834B1 (fr) 2019-05-28 2019-05-28 Dispositif optoelectronique comportant une diode electroluminescente ayant une couche limitant les courants de fuite
US17/613,699 US12002841B2 (en) 2019-05-28 2020-05-28 Optoelectronic device comprising two wire-shaped light-emitting diodes each having a layer that limits the leakage currents
PCT/FR2020/050902 WO2020240140A1 (fr) 2019-05-28 2020-05-28 Dispositif optoélectronique comportant deux diodes électroluminescentes filaires ayant chacune une couche limitant les courants de fuite
EP20737521.3A EP3977512A1 (fr) 2019-05-28 2020-05-28 Dispositif optoélectronique comportant deux diodes électroluminescentes filaires ayant chacune une couche limitant les courants de fuite

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1905638 2019-05-28
FR1905638A FR3096834B1 (fr) 2019-05-28 2019-05-28 Dispositif optoelectronique comportant une diode electroluminescente ayant une couche limitant les courants de fuite

Publications (2)

Publication Number Publication Date
FR3096834A1 FR3096834A1 (fr) 2020-12-04
FR3096834B1 true FR3096834B1 (fr) 2022-11-25

Family

ID=67957071

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1905638A Active FR3096834B1 (fr) 2019-05-28 2019-05-28 Dispositif optoelectronique comportant une diode electroluminescente ayant une couche limitant les courants de fuite

Country Status (3)

Country Link
EP (1) EP3977512A1 (fr)
FR (1) FR3096834B1 (fr)
WO (1) WO2020240140A1 (fr)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5097532B2 (ja) * 2007-12-21 2012-12-12 パナソニック株式会社 化合物半導体発光素子の製造方法
KR101622308B1 (ko) * 2009-11-17 2016-05-18 삼성전자주식회사 발광소자 및 그 제조방법
FR2995729B1 (fr) * 2012-09-18 2016-01-01 Aledia Dispositif opto-electrique a microfils ou nanofils semiconducteurs et son procede de fabrication
FR2997558B1 (fr) * 2012-10-26 2015-12-18 Aledia Dispositif opto-electrique et son procede de fabrication
FR3053530B1 (fr) 2016-06-30 2018-07-27 Aledia Dispositif optoelectronique a pixels a contraste et luminance ameliores
US10388641B2 (en) * 2017-10-19 2019-08-20 Tectus Corporation Ultra-dense LED projector

Also Published As

Publication number Publication date
EP3977512A1 (fr) 2022-04-06
FR3096834A1 (fr) 2020-12-04
US20220231076A1 (en) 2022-07-21
WO2020240140A1 (fr) 2020-12-03

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